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31. 发明授权

US6085688A Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor 失效
标题翻译：用于改善电感耦合等离子体反应器中的处理和减少电荷损伤的方法和装置
公开(公告)号：US6085688A
公开(公告)日：2000-07-11
申请号：US49722
申请日：1998-03-27
申请人： Dimitris Lymberopoulos , Peter Loewenhardt , John Yamartino
发明人： Dimitris Lymberopoulos , Peter Loewenhardt , John Yamartino
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , H01J37/3266 , H01J2237/3348
摘要： The present invention provides an apparatus and method for processing a workpiece in an inductively coupled plasma reactor. Inductive power is applied to the reactor to generate a plasma. A magnetic field is generated within the plasma reactor having lines of force oriented perpendicular to the workpiece surface. It is a feature of the invention to control the electron temperature near the surface of the workpiece by controlling the applied magnetic field. It is a further feature to increase average ion density near the workpiece without otherwise causing damage to the workpiece due to uneven charge build-up. The applied magnetic field can be time invariant or time variant. In both cases, processing can be optimized by adjusting the magnitude of the magnetic field to a level just below where damage due to uneven charge build-up occurs. With the time variant field, the average ion density can be adjusted with respect to average electron temperature. As such, average ion density near the workpiece can by increased without otherwise causing damage to the workpiece. It is a further feature of the present invention to provide independently controllable conductors for generating the magnetic field and to provide an adjustable non-uniformly distributed magnetic field within the chamber. This can be used to selectively control plasma density or to selectively confine process gas species.
摘要翻译：本发明提供了一种用于在电感耦合等离子体反应器中处理工件的装置和方法。将感应功率施加到反应器以产生等离子体。在等离子体反应器内产生一个与工件表面垂直的力线。通过控制所施加的磁场来控制工件表面附近的电子温度是本发明的一个特征。增加工件附近的平均离子密度是另一个特征，而不会由于不均匀的电荷积聚而造成工件损坏。施加的磁场可以是时间不变或时变。在这两种情况下，可以通过将磁场的大小调整到刚好低于由于不均匀电荷积聚造成的损坏的水平，来优化处理。使用时变场，平均离子密度可以相对于平均电子温度进行调整。因此，靠近工件的平均离子密度可以增加而不会对工件造成损害。本发明的另一个特征是提供用于产生磁场的可独立控制的导体并且在室内提供可调节的非均匀分布的磁场。这可以用于选择性地控制等离子体密度或选择性地限制工艺气体种类。

32. 发明授权

US5565681A Ion energy analyzer with an electrically controlled geometric filter 失效
标题翻译：离子能量分析仪带有电控几何滤镜
公开(公告)号：US5565681A
公开(公告)日：1996-10-15
申请号：US409389
申请日：1995-03-23
申请人： Peter Loewenhardt , Gerald Z. Yin
发明人： Peter Loewenhardt , Gerald Z. Yin
IPC分类号： H05H1/00 , H01J37/05 , H01L21/302 , H01L21/3065 , H01J49/48
CPC分类号： H01J37/32935 , H01J37/05 , H01J2237/053 , H01J2237/057
摘要： An ion energy analyzer having a micro-channel plate where the geometric filtering characteristics of the micro-channel plate are electrically controlled. The ion energy analyzer contains a metallic collector, a control grid and a micro-channel plate, all formed into a cylindrical stack where the collector, control grid and micro-channel plate are separated by ceramic insulating washers. A control element is formed within each aperture of the micro-channel plate for controlling a critical angle of each aperture. A voltage is applied to the control element such that an electric field is generated within each micro-channel. By varying the magnitude of the electric field, the critical angle of the micro-channel plate can be electrically controlled, and as such, certain ion trajectories can be selected for entry into the ion energy analyzer.
摘要翻译：具有微通道板的离子能量分析器，其中微通道板的几何滤波特性被电控制。离子能量分析仪包含金属收集器，控制栅格和微通道板，全部形成圆柱形堆叠，集电器，控制栅极和微通道板由陶瓷绝缘垫圈分隔开。控制元件形成在微通道板的每个孔内，用于控制每个孔的临界角。电压施加到控制元件，使得在每个微通道内产生电场。通过改变电场的大小，可以电控制微通道板的临界角，并且因此可以选择某些离子轨迹以进入离子能量分析器。

33. 发明授权

US08801892B2 Uniform etch system 有权
标题翻译：均匀刻蚀系统
公开(公告)号：US08801892B2
公开(公告)日：2014-08-12
申请号：US12055212
申请日：2008-03-25
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/52
CPC分类号： H01L21/67017
摘要： Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
摘要翻译：提供了在衬底上蚀刻一层。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室内的外部区域，其中外部区域围绕内部区域并且第一气体不同于第二气体。从第一气体和第二气体同时产生等离子体。蚀刻该层，其中该层被来自第一气体和第二气体的等离子体蚀刻。

34. 发明授权

US07385287B2 Preventing damage to low-k materials during resist stripping 有权
标题翻译：防止抗蚀剂剥离时对低k材料的损伤
公开(公告)号：US07385287B2
公开(公告)日：2008-06-10
申请号：US11744035
申请日：2007-05-03
申请人： Siyi Li , Helen H. Zhu , Howard Dang , Thomas S. Choi , Peter Loewenhardt
发明人： Siyi Li , Helen H. Zhu , Howard Dang , Thomas S. Choi , Peter Loewenhardt
IPC分类号： H01L23/52 , H01L29/40
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/3105 , H01L21/31138
摘要： A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.
摘要翻译：提供了在低k电介质层中形成特征的方法。将低k电介质层放置在衬底上。将图案化的光致抗蚀剂掩模放置在低k电介质层上。至少一个特征被蚀刻到低k电介质层中。在蚀刻至少一个特征之后，在至少一个特征上进行CO调节。在CO调节之后剥离图案化的光刻胶掩模。

35. 发明授权

US07211518B2 Waferless automatic cleaning after barrier removal 有权
标题翻译：无障碍自动清洗后屏障去除
公开(公告)号：US07211518B2
公开(公告)日：2007-05-01
申请号：US10828065
申请日：2004-04-19
申请人： Xiaoqiang Sean Yao , Bi-Ming Yen , Taejoon Han , Peter Loewenhardt
发明人： Xiaoqiang Sean Yao , Bi-Ming Yen , Taejoon Han , Peter Loewenhardt
IPC分类号： H01L21/465
CPC分类号： H01L21/76808 , H01L21/02063 , H01L21/31116 , Y10S438/905
摘要： A method for forming features in dielectric layers and opening barrier layers for a plurality of wafers and cleaning an etch chamber after processing and removing each wafer of the plurality of wafers is provided. A wafer of the plurality of wafers is placed into the etch chamber wherein the wafer has a barrier layer over the wafer and a dielectric layer over the barrier layer. The dielectric layer is etched. The barrier layer is opened. The wafer is removed from the etch chamber. A waferless automatic cleaning of the etch chamber without the wafer is provided. The waferless automatic cleaning comprises providing a waferless automatic cleaning gas comprising oxygen and nitrogen to the etch chamber and forming a waferless automatic cleaning plasma from the waferless automatic cleaning gas to clean the etch chamber.
摘要翻译：提供了一种用于在电介质层中形成特征的方法和用于多个晶片的开口阻挡层并且在处理和去除多个晶片中的每个晶片之后清洁蚀刻室。将多个晶片的晶片放置在蚀刻室中，其中晶片在晶片上方具有阻挡层，并且在阻挡层上方具有介电层。蚀刻介电层。阻隔层打开。从蚀刻室移除晶片。提供了没有晶片的蚀刻室的无晶圆自动清洗。无晶圆自动清洁包括向蚀刻室提供包括氧和氮的无晶圆自动清洁气体，并从无晶圆自动清洁气体形成无晶圆的自动清洗等离子体，以清洁蚀刻室。

36. 发明申请

US20050233590A1 Waferless automatic cleaning after barrier removal 有权
标题翻译：无障碍自动清洗后屏障去除
公开(公告)号：US20050233590A1
公开(公告)日：2005-10-20
申请号：US10828065
申请日：2004-04-19
申请人： Xiaoqiang Yao , Bi-Ming Yen , Taejoon Han , Peter Loewenhardt
发明人： Xiaoqiang Yao , Bi-Ming Yen , Taejoon Han , Peter Loewenhardt
IPC分类号： H01L21/00 , H01L21/02 , H01L21/311 , H01L21/465 , H01L21/768
CPC分类号： H01L21/76808 , H01L21/02063 , H01L21/31116 , Y10S438/905
摘要： A method for forming features in dielectric layers and opening barrier layers for a plurality of wafers and cleaning an etch chamber after processing and removing each wafer of the plurality of wafers is provided. A wafer of the plurality of wafers is placed into the etch chamber wherein the wafer has a barrier layer over the wafer and a dielectric layer over the barrier layer. The dielectric layer is etched. The barrier layer is opened. The wafer is removed from the etch chamber. A waferless automatic cleaning of the etch chamber without the wafer is provided. The waferless automatic cleaning comprises providing a waferless automatic cleaning gas comprising oxygen and nitrogen to the etch chamber and forming a waferless automatic cleaning plasma from the waferless automatic cleaning gas to clean the etch chamber.
摘要翻译：提供了一种用于在电介质层中形成特征的方法和用于多个晶片的开口阻挡层并且在处理和去除多个晶片中的每个晶片之后清洁蚀刻室。将多个晶片的晶片放置在蚀刻室中，其中晶片在晶片上方具有阻挡层，并且在阻挡层上方具有介电层。蚀刻介电层。阻隔层打开。从蚀刻室移除晶片。提供了没有晶片的蚀刻室的无晶圆自动清洗。无晶圆自动清洁包括向蚀刻室提供包括氧和氮的无晶圆自动清洁气体，并从无晶圆自动清洁气体形成无晶圆的自动清洗等离子体，以清洁蚀刻室。

37. 发明授权

US06352049B1 Plasma assisted processing chamber with separate control of species density 失效
标题翻译：等离子辅助处理室具有单独的物种密度控制
公开(公告)号：US06352049B1
公开(公告)日：2002-03-05
申请号：US09119417
申请日：1998-07-20
申请人： Gerald Yin , Arnold Kolandenko , Hong Ching Shan , Peter Loewenhardt , Chii Lee , Yan Ye , Xueyan Qian , Songlin Xu , Arthur Chen , Arthur Sato , Michael Grimbergen , Diana Ma , John Yamartino , Chun Yan , Wade Zawalski
发明人： Gerald Yin , Arnold Kolandenko , Hong Ching Shan , Peter Loewenhardt , Chii Lee , Yan Ye , Xueyan Qian , Songlin Xu , Arthur Chen , Arthur Sato , Michael Grimbergen , Diana Ma , John Yamartino , Chun Yan , Wade Zawalski
IPC分类号： C23E1648
CPC分类号： H01J37/32871
摘要： The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.
摘要翻译：本发明提供了一种用于工件的等离子体辅助处理的装置和方法，其提供对处理等离子体内的物质密度的单独控制。本发明具有处理室和至少一个辅助室。辅助室能够产生旁路血浆并将其输送到处理室。为了控制处理室内的颗粒物质的密度，本发明可以具有：插入在侧室和处理室之间的过滤器，主室源功率，向处理室提供单独输入的若干附属室，或其组合。附带等离子体可以是：过滤，与初级室产生的等离子体组合，与另一副侧血浆或其组合组合以分别控制包含处理血浆的物质的密度。

38. 发明授权

US5801386A Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same 失效
标题翻译：用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法
公开(公告)号：US5801386A
公开(公告)日：1998-09-01
申请号：US653212
申请日：1996-05-28
申请人： Valentin N. Todorov , Yoshi Tanase , Xue-Yu Qian , Arthur H. Sato , Peter Loewenhardt , Yan Ye , Shaoher X. Pan , Dragan Podlesnik
发明人： Valentin N. Todorov , Yoshi Tanase , Xue-Yu Qian , Arthur H. Sato , Peter Loewenhardt , Yan Ye , Shaoher X. Pan , Dragan Podlesnik
IPC分类号： H01J37/32 , H01J37/244
CPC分类号： H01J37/32935
摘要： Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using the apparatus. The apparatus contains a first insulator layer upon which one or more conductive collector pads are formed by patterning and etching a copper laminate. Each collector pad is connected to a conductive lead (e.g., a printed circuit trace) that extends from each collector pad to the edge of the first insulator layer. A second insulator layer is positioned above the first insulator layer such that the collector pad(s) and their respective lead(s) are sandwiched between the two insulator layers. An adhesive is used to affix the second insulator to the first insulator and the collector pads. The collector pads are exposed to the plasma through apertures defined by the second insulator layer.
摘要翻译：用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法。该装置包含第一绝缘体层，通过图案化和蚀刻铜层压体而形成一个或多个导电集电极焊盘。每个集电极焊盘连接到从每个集电极焊盘延伸到第一绝缘体层的边缘的导电引线（例如印刷电路迹线）。第二绝缘体层位于第一绝缘体层之上，使得集电极焊盘及其相应的引线夹在两个绝缘体层之间。使用粘合剂将第二绝缘体固定到第一绝缘体和集电板。集电极焊盘通过由第二绝缘体层限定的孔暴露于等离子体。

39. 发明申请

US20120031426A1 Methods For Preventing Corrosion of Plasma-Exposed Yttria-Coated Constituents 有权
标题翻译：防止等离子体暴露的氧化钇涂层组分腐蚀的方法
公开(公告)号：US20120031426A1
公开(公告)日：2012-02-09
申请号：US12852673
申请日：2010-08-09
申请人： Ganapathy Swami , Peter Loewenhardt , Yunsang Kim
发明人： Ganapathy Swami , Peter Loewenhardt , Yunsang Kim
IPC分类号： B08B6/00
CPC分类号： C23C16/4404
摘要： In accordance with one embodiment of the present disclosure, a method for preventing corrosion of a plasma-exposed yttria-coated constituent from ambient acidic hydrolysis wherein the plasma-exposed yttria-coated constituent includes a hydrolysable acid precursor is disclosed. The method may include: removing the plasma-exposed yttria-coated constituent from a semiconductor processing assembly; binding the plasma-exposed yttria-coated constituent with flexible moisture wicking material; hydrolyzing the hydrolysable acid precursor with an overwhelming aqueous admixture to form a vitiated acidic compound, wherein the flexible moisture wicking material pulls the vitiated acidic compound away from the plasma-exposed yttria-coated constituent with capillary action; dehydrating the plasma-exposed yttria-coated constituent with additional flexible moisture wicking material to pull a latent amount of the vitiated acidic compound away from the plasma-exposed yttria-coated constituent; and isolating the plasma-exposed yttria-coated constituent from ambient moisture in a moisture obstructing enclosure.
摘要翻译：根据本公开的一个实施方案，公开了一种防止等离子体暴露的氧化钇涂覆的组分由环境酸性水解引起的腐蚀的方法，其中等离子体暴露的氧化钇涂层的组分包括可水解的酸前体。该方法可以包括：从半导体处理组件中去除等离子体暴露的氧化钇涂层的组分; 用柔性吸湿芯材材料结合等离子体暴露的氧化钇涂层组分; 用压倒性的水性混合物水解可水解的酸前体以形成残留的酸性化合物，其中柔性湿润吸湿材料通过毛细管作用将残留的酸性化合物从等离子体暴露的氧化钇涂覆的组分拉出; 用额外的柔性吸湿芯材材料使等离子体暴露的氧化钇涂层组分脱水，以将潜在量的残留酸性化合物远离等离子体暴露的氧化钇涂层组分; 并将隔离曝光的氧化钇涂层的组分与湿气阻塞的外壳中的环境湿度隔离开来。

40. 发明申请

US20080210377A1 UNIFORM ETCH SYSTEM 有权
标题翻译：均匀蚀刻系统
公开(公告)号：US20080210377A1
公开(公告)日：2008-09-04
申请号：US12055212
申请日：2008-03-25
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty , Peter Loewenhardt
IPC分类号： C23F1/08
CPC分类号： H01L21/67017
摘要： Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
摘要翻译：提供了在衬底上蚀刻一层。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室内的外部区域，其中外部区域围绕内部区域并且第一气体不同于第二气体。从第一气体和第二气体同时产生等离子体。蚀刻该层，其中该层被来自第一气体和第二气体的等离子体蚀刻。

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