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    • 32. 发明授权
    • Liquid crystal display device having drive circuit
    • 具有驱动电路的液晶显示装置
    • US07879664B2
    • 2011-02-01
    • US12690738
    • 2010-01-20
    • Yun-Ho Jung
    • Yun-Ho Jung
    • H01L21/8234
    • H01L21/02532H01L21/02595H01L21/02678H01L21/2026H01L27/1285H01L27/1296H01L29/04H01L29/78675
    • A fabricating method of an array substrate for a liquid crystal display device including forming a polycrystalline silicon film on a substrate having a display region and a peripheral region, the polycrystalline silicon film having grains of square shape, forming a first active layer in the display region and a second active layer in the peripheral region by etching the polycrystalline silicon film, forming a first gate electrode over the first active layer, a second gate electrode over the second active layer and a gate line connected to the first gate electrode, and forming first source and drain electrodes connected to the first active layer, second source and drain electrodes connected to the second active layer and data line connected to the first source electrode. Further, the second gate electrode overlaps the first active layer to form a first channel region, and the first channel region is formed inside one of the grains.
    • 一种用于液晶显示装置的阵列基板的制造方法,包括在具有显示区域和外围区域的基板上形成多晶硅膜,所述多晶硅膜具有正方形晶粒,在所述显示区域中形成第一有源层 以及通过蚀刻所述多晶硅膜在所述外围区域中的第二有源层,在所述第一有源层上形成第一栅电极,在所述第二有源层上方形成第二栅电极,以及连接到所述第一栅电极的栅极线, 连接到第一有源层的源极和漏极电极,连接到第二有源层的第二源极和漏极电极以及连接到第一源极电极的数据线。 此外,第二栅电极与第一有源层重叠以形成第一沟道区,并且第一沟道区形成在其中一个晶粒内。
    • 36. 发明授权
    • Mask for sequential lateral solidification and crystallization method using thereof
    • 用于顺序侧向固化和使用其的结晶方法的掩模
    • US07329936B2
    • 2008-02-12
    • US11029395
    • 2005-01-06
    • Yun-Ho Jung
    • Yun-Ho Jung
    • H01L31/0232
    • B23K26/0661B23K26/066C30B1/023C30B13/22C30B28/02C30B29/06H01L21/02532H01L21/0268H01L21/02691Y10S438/942Y10T117/1004Y10T117/1008Y10T117/1012
    • A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from each other in a first direction and a second direction substantially perpendicular from the first direction, each transmissive region having a central portion and first and second side portions that are adjacent to opposite ends of the central portion along the first direction, and wherein each of the portions has a length along the first direction and a width along the second direction, and wherein the width of first and second portions decreases away from the central portion along the first direction; irradiating a laser beam onto the amorphous silicon layer a first time through the mask to form a plurality of first irradiated regions corresponding to the plurality of transmissive regions, each first irradiated region having a central portion, and first and second side portions at both sides of the central portion; moving the substrate and the mask relative to one another such that the first side portion of each transmissive region overlaps the central portion of each first irradiated region; and irradiating the laser beam onto the amorphous silicon layer a second time through the mask to form a plurality of second irradiated regions corresponding to the plurality of transmissive regions.
    • 一种形成多晶硅层的方法包括:在非晶硅层上设置掩模,所述掩模具有多个透射区域,所述多个透射区域沿第一方向彼此间隔开设置,并且 第二方向与第一方向基本垂直,每个透射区域具有中心部分,以及沿着第一方向与中心部分的相对端相邻的第一和第二侧部分,并且其中每个部分具有沿着第一方向的长度 和沿第二方向的宽度,并且其中第一和第二部分的宽度沿着第一方向远离中心部分减小; 首先通过掩模将激光束照射到非晶硅层上,以形成与多个透射区域相对应的多个第一照射区域,每个第一照射区域具有中心部分,并且第一和第二侧部分位于 中心部分 使所述基板和所述掩模相对于彼此移动,使得每个透射区域的第一侧部分与每个第一照射区域的中心部分重叠; 以及通过所述掩模将所述激光束第二次照射到所述非晶硅层上,以形成对应于所述多个透射区域的多个第二照射区域。
    • 39. 发明授权
    • Silicon crystallization method
    • 硅结晶法
    • US06825493B2
    • 2004-11-30
    • US10163419
    • 2002-06-07
    • Yun-Ho Jung
    • Yun-Ho Jung
    • H01L2904
    • H01L21/0268H01L21/02532H01L21/2026H01L29/66757H01L29/78675
    • Sequential lateral solidification (SLS) crystallization of amorphous silicon using a mask having striped light transmitting portions. An amorphous silicon bearing substrate is located in an SLS apparatus. The amorphous silicon film is functionally divided into a driving region (for driving devices) and a display region (for TFT switches). Part of the driving region is crystallized by a laser that passes through the mask. The mask is then moved relative to the substrate by a translation distance that is less than half the width of the light transmitting portions. Thereafter, subsequent crystallizations are performed to crystallize the driving region. Then, part of the display region is crystallized by a laser that passes through the mask. The mask is then moved relative to the substrate by a translation distance that is more than half the width of the light transmitting portions. Thereafter, subsequent crystallizations are performed to crystallize the display region.
    • 使用具有带状光透射部分的掩模的非晶硅的顺序侧向固化(SLS)结晶。 非晶硅轴承衬底位于SLS装置中。 非晶硅膜在功能上划分为驱动区域(用于驱动装置)和显示区域(用于TFT开关)。 驱动区域的一部分通过穿过掩模的激光结晶。 然后将掩模相对于基板移动一个平移距离,该平移距离小于透光部分宽度的一半。 此后,进行随后的结晶以使驱动区域结晶。 然后,通过穿过掩模的激光使显示区域的一部分结晶。 然后将掩模相对于基板移动超过透光部分宽度的一半的平移距离。 此后,进行随后的结晶以使显示区域结晶。