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31. 发明申请

US20120063175A1 COMPENSATION CIRCUIT AND METHOD FOR A SYNCHRONOUS RECTIFIER DRIVER 审中-公开
标题翻译：同步整流器驱动器的补偿电路和方法
公开(公告)号：US20120063175A1
公开(公告)日：2012-03-15
申请号：US13228268
申请日：2011-09-08
申请人： Dong WANG , Yan-Fei LIU
发明人： Dong WANG , Yan-Fei LIU
IPC分类号： H02M3/335
CPC分类号： H02M3/33592 , H03K17/133 , H03K17/161 , Y02B70/1433 , Y02B70/1475
摘要： Provided are circuits and methods for driving the synchronous rectifier (SR) of a power converter. A non-linear voltage sense compensator is applied across the drain and source of the SR, and a sense signal is provided to the SR driver sense input, such that false triggering of the SR is effectively eliminated. In addition, the voltage sense compensator ensures that the SR is turned on as soon as its current starts to flow and is turned off when its current falls to zero. The embodiments described herein may be incorporated into new VR designs, or they may be used to improve the SR driving characteristics of commercially available voltage sensing SR drivers.
摘要翻译：提供了用于驱动功率转换器的同步整流器（SR）的电路和方法。在SR的漏极和源极之间施加非线性电压感测补偿器，并且向SR驱动器感测输入提供感测信号，从而有效地消除了SR的错误触发。此外，电压检测补偿器确保SR一旦其电流开始流动就导通，当电流下降到零时关闭。本文描述的实施例可以并入新的VR设计中，或者它们可以用于改善市售的电压感测SR驱动器的SR驱动特性。

32. 发明授权

US06911746B2 Signal and power transformer coupling arrangements 有权
标题翻译：信号和电源变压器耦合布置
公开(公告)号：US06911746B2
公开(公告)日：2005-06-28
申请号：US10428103
申请日：2003-05-02
申请人： Raymond Kenneth Orr , Yan-Fei Liu , David Alan Brown , Rajko Duvnjak
发明人： Raymond Kenneth Orr , Yan-Fei Liu , David Alan Brown , Rajko Duvnjak
IPC分类号： G08C17/04 , H03K3/00
CPC分类号： G08C17/04
摘要： An isolating coupling arrangement couples signals in both directions via a transformer between first and second (or more) units each having differential signal transmit buffers and receivers. A diode bridge and capacitor produce an isolated power supply voltage for the second unit from signals coupled from the first unit via the transformer. The diode bridge can use intrinsic diodes of CMOS output circuits of the transmit buffers, which can be controlled synchronously using a phase locked loop responsive to signals coupled from the first unit via the transformer. A supply voltage for the first unit can be increased to compensate for voltage drops of the diode bridge on start-up prior to the synchronous operation. A resistor in parallel with a diode of the bridge provides an asymmetrical load to create a DC component of transformer magnetizing current to eliminate oscillations during signal gaps.
摘要翻译：隔离耦合装置通过第一和第二（或多个）单元之间的变压器在两个方向上耦合信号，每个单元具有差分信号发送缓冲器和接收器。二极管桥和电容器通过变压器从第一单元耦合的信号产生用于第二单元的隔离电源电压。二极管桥可以使用发射缓冲器的CMOS输出电路的本征二极管，其可以使用响应于经由变压器耦合自第一单元的信号的锁相环来同步地被控制。可以增加第一单元的电源电压以补偿在同步操作之前启动时二极管桥的电压降。与桥式二极管并联的电阻器提供非对称负载，以产生变压器磁化电流的直流分量，以消除信号间隙期间的振荡。

33. 发明授权

US6097614A Asymmetrical pulse width modulated resonant DC-DC converter with compensating circuitry 失效
标题翻译：具补偿电路的非对称脉宽调制谐振DC-DC转换器
公开(公告)号：US6097614A
公开(公告)日：2000-08-01
申请号：US312306
申请日：1999-05-14
申请人： Praveen Jain , Yan-Fei Liu , Simmi Mangat
发明人： Praveen Jain , Yan-Fei Liu , Simmi Mangat
IPC分类号： H02M3/337 , H02M3/335
CPC分类号： H02M3/337 , Y02B70/1433
摘要： An asymmetrical pulse width modulated resonant DC--DC converter exhibiting improved zero voltage switching characteristics is disclosed. The converter includes a chopper circuit to convert the DC input voltage to a high frequency AC voltage which, in turn, is fed to a high frequency transformer whose secondary AC is rectified and filtered to produce a stable DC output. A compensation network is placed between the input and the chopper circuit which provides zero voltage switching of the converter over a wide input voltage range.
摘要翻译：公开了一种表现出改进的零电压开关特性的非对称脉宽调制谐振DC-DC转换器。该转换器包括将DC输入电压转换成高频交流电压的斩波电路，该高频交流电压进而被馈送到二次交流整流和滤波以产生稳定的直流输出的高频变压器。在输入和斩波电路之间放置补偿网络，该电路在宽输入电压范围内提供转换器的零电压开关。

34. 发明申请

US20220109048A1 High Voltage Gallium Nitride Field Effect Transistor 有权
公开(公告)号：US20220109048A1
公开(公告)日：2022-04-07
申请号：US17487117
申请日：2021-09-28
申请人： Zhanming Li , Yan-Fei Liu , Wai Tung Ng
发明人： Zhanming Li , Yan-Fei Liu , Wai Tung Ng
IPC分类号： H01L29/06 , H01L29/20 , H01L29/778 , H01L29/66
摘要： A gallium nitride (GaN) semiconductor device has first and second electrodes connected to a top metal layer disposed in complementary first and second irregular shapes, each irregular shape including a wide connection area at a first end, a tapered area, and a narrow area at a second end. The first and second irregular shapes are arranged adjacent each other along complementary edges such that a gap between the complementary edges is of substantially constant width. The first and second wide connection areas include pads for wire bond or land grid array electrical connections to external circuitry. The first and second irregular shapes for source and drain metal of a field effect transistor (FET) or high electron mobility transistor (HEMT) allows the width of the gate finger to be short so that electrical current injected from the gate can reach all portions of the gate fingers efficiently during high frequency switching, making the topology suitable for high voltage power devices.

35. 发明授权

US11107755B2 Packaging for lateral high voltage GaN power devices 有权
公开(公告)号：US11107755B2
公开(公告)日：2021-08-31
申请号：US16871026
申请日：2020-05-10
申请人： Zhanming Li , Yue Fu , Yan-Fei Liu
发明人： Zhanming Li , Yue Fu , Yan-Fei Liu
IPC分类号： H01L23/495 , H01L23/00
摘要： Packaging methods and structures for lateral high voltage gallium nitride (GaN) devices achieve electrical isolation while also maintaining thermal dissipation. The electrical isolation reduces or eliminates vertical leakage current, improving high voltage performance. The packages may use or be compatible standards such as JEDEC, which reduces packaging cost and facilitates implementation of the packaged devices in conventional circuit design approaches.

36. 发明申请

US20190379374A1 High-Side Gate Driver for Gallium Nitride Integrated Circuits 审中-公开
公开(公告)号：US20190379374A1
公开(公告)日：2019-12-12
申请号：US16423138
申请日：2019-05-27
申请人： Zhanming Li , Yan-Fei Liu , Yue Fu , Wai Tung Ng
发明人： Zhanming Li , Yan-Fei Liu , Yue Fu , Wai Tung Ng
IPC分类号： H03K17/30 , H03K17/06 , H03K17/22
摘要： A gate driver circuit for a gallium nitride (GaN) power transistor includes a RS-flipflop that receives a first pulse train at an S input terminal and a second pulse train at an R input terminal, and produces an output pulse train, and an amplifier that amplifies the output pulse train and produces a gate driver signal for the GaN power transistor. The RS-flipflop and the amplifier may be implemented together on a GaN monolithic integrated circuit, optionally together with the GaN power transistor. The GaN power transistor may be a high-side switch of a half-bridge circuit. The RS-flipflop may be implemented with enhancement mode and depletion mode GaN high electron mobility transistors (HEMTs). Embodiments avoid drawbacks of prior hybrid (e.g., silicon-GaN) approaches, such as parasitic inductances from bonding wires and on-board metal traces, especially at high operating frequencies, as well as reduce implementation cost and improve performance.

37. 发明申请

US20190058416A1 Single-Phase Five-Level Active Clamping Converter Unit and Converter 审中-公开
公开(公告)号：US20190058416A1
公开(公告)日：2019-02-21
申请号：US15770493
申请日：2017-03-17
申请人： Hongliang WANG , Yan-Fei LIU
发明人： Hongliang WANG , Yan-Fei LIU
IPC分类号： H02M7/487 , H02M7/537 , H02S40/32
CPC分类号： H02M7/487 , H02M7/48 , H02M7/537 , H02S40/32 , Y02E10/56
摘要： A single-phase five-level active clamping converter unit and a converter. The single-phase five-level active clamping converter unit has three input ends and one output end, and also comprises: a suspension capacitor and a topological control portion. The topological control portion is connected to the suspension capacitor and the three input ends and one output end of the single-phase five-level active clamping converter unit, is connected to a plurality of control ends, and is suitable for the supply of at least eight operating modes under the control of a control signal accessing the control ends. In the single-phase five-level active clamping converter unit, a topological structure is easy to design, and is simple and convenient to control.

38. 发明申请

US20180309383A1 Five-Level Inverter Topology with High Voltage Utilization Ratio 审中-公开
公开(公告)号：US20180309383A1
公开(公告)日：2018-10-25
申请号：US15767721
申请日：2016-11-07
申请人： Yan-Fei LIU
发明人： Hongliang Wang , Yan-Fei Liu
IPC分类号： H02M7/483 , H02M1/32 , H02M7/5387
CPC分类号： H02M7/483 , H02M1/32 , H02M7/487 , H02M7/5387 , Y02E10/56
摘要： A five-voltage level inverter topology circuit, and three-phase and five-voltage level inverter topology circuit, suitable for use with two serial-connected direct current (DC) power sources (C1, C2), comprise: a half-bridge inverter circuit comprising a first circuit module (M1) and a second circuit module (M2). The half-bridge inverter circuit can output 5 voltage levels including a 0V level. The five-voltage level inverter topology circuit adopts a 5-voltage level half-bridge structure, and only requires an alternating current (AC) filtering inductor (L1), thereby reducing a system cost and size, removing a leakage current, and providing high efficiency.

39. 发明申请

US20130318366A1 DUAL FREQUENCY CONTROL OF BUCK-BOOST REGULATOR WITH A PASS THROUGH BAND 有权
标题翻译：具有通过带通的BUCK-BOOST调节器的双频控制
公开(公告)号：US20130318366A1
公开(公告)日：2013-11-28
申请号：US13481073
申请日：2012-05-25
申请人： Hengchun MAO , Yan-Fei LIU
发明人： Hengchun MAO , Yan-Fei LIU
IPC分类号： G05F3/02 , G06F1/26
CPC分类号： G05F3/02 , G06F1/26
摘要： Dual frequency control of first and second pairs of switches of a buck-boost regulator with pass through band is disclosed. In buck and boost modes respectively a first pair of the switches is operated at high frequency and a second pair of the switches is operated at low frequency. In pass through mode, both pairs of switches are operated at low frequency. Dual frequency control and operation of the pairs of switches enables current sharing between positive and negative power leads in buck, boost and pass-through modes.
摘要翻译：公开了具有通过带的降压 - 升压调节器的第一和第二对开关的双频率控制。在降压和升压模式下，第一对开关以高频工作，第二对开关以低频工作。在通过模式下，两对开关都以低频工作。两对开关的双频率控制和操作可以在降压，升压和直通模式下实现正负电源线之间的电流共享。

40. 发明申请

US20120068683A1 Current Source Gate Driver with Negative Gate Voltage 审中-公开
标题翻译：具有负栅极电压的电流源栅极驱动器
公开(公告)号：US20120068683A1
公开(公告)日：2012-03-22
申请号：US13234241
申请日：2011-09-16
申请人： Yan-Fei LIU , Zhiliang ZHANG , Jizhen FU
发明人： Yan-Fei LIU , Zhiliang ZHANG , Jizhen FU
IPC分类号： G05F3/08
CPC分类号： H02M1/08
摘要： Described herein are methods and circuits for driving a power switching device of a power converter. The methods and circuits include providing a negative gate to source voltage to the power switching device during an off transition of the power switching device, wherein the negative gate to source voltage is provided independent of one or more switching element for driving the power switching device; wherein body diode conduction by the one or more switching element is mitigated; wherein a circuit connected in parallel with the gate and source of the power switching device is used to set or define the negative gate to source voltage.
摘要翻译：这里描述了用于驱动功率转换器的功率开关装置的方法和电路。所述方法和电路包括在功率开关器件的断开转换期间向功率开关器件提供负栅极至源极电压，其中负栅极至源极电压独立于用于驱动功率开关器件的一个或多个开关元件而提供; 其中通过所述一个或多个开关元件的体二极管导通被减轻; 其中使用与电源开关器件的栅极和源极并联连接的电路来设置或限定负栅极到源极电压。

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