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31. 发明申请

US20110235339A1 Molded Fluorescence Plastic Lens and Manufacturing Method Thereof 审中-公开
标题翻译：成型荧光塑料镜片及其制造方法
公开(公告)号：US20110235339A1
公开(公告)日：2011-09-29
申请号：US12205370
申请日：2008-09-05
申请人： San-Woei Shyu , Chien-Yi Huang , Ching-Wei Sun , Wen-Huang Liu
发明人： San-Woei Shyu , Chien-Yi Huang , Ching-Wei Sun , Wen-Huang Liu
IPC分类号： F21V5/04 , B29D11/00
CPC分类号： B29D11/00865 , B29D11/00413
摘要： A molded fluorescent plastic lens and a manufacturing method thereof are disclosed. The fluorescent material 3 is attached on surface of plastic preform or a cavity of a mold core of a mold. By plastic molding, the plastic preform is heated, pressured and cast into a molded fluorescent plastic lens with a fluorescent surface. Thus the molded fluorescent plastic lens not only has shape and optical properties of the molded forming lens, but also has fluorescent properties from a fluorescent surface layer formed by fluorescent material inserted into the plastic. Thus the produced molded fluorescent plastic lens is applied to road reflectors, white light LED or other optical elements for use.
摘要翻译：公开了一种模制荧光塑料透镜及其制造方法。荧光材料3附着在塑料预制件的表面或模具的模芯的空腔上。通过塑料成型，将塑料预成型件加热，加压并浇铸成具有荧光表面的模制荧光塑料透镜。因此，模制荧光塑料透镜不仅具有成型透镜的形状和光学特性，而且具有从插入塑料中的荧光材料形成的荧光表面层的荧光特性。因此，所生产的模制荧光塑料镜片被应用于道路反射器，白光LED或其他用于使用的光学元件。

32. 发明授权

US08003994B2 Vertical LED with current guiding structure 有权
标题翻译：垂直LED带电流引导结构
公开(公告)号：US08003994B2
公开(公告)日：2011-08-23
申请号：US12823866
申请日：2010-06-25
申请人： Wen-Huang Liu , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
发明人： Wen-Huang Liu , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/22
CPC分类号： H01L33/38 , H01L27/15 , H01L33/385 , H01L33/40 , H01L33/44 , H01L2224/48091 , H01L2224/48465 , H01L2224/4903 , H01L2924/00014 , H01L2924/00
摘要： Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.
摘要翻译：提供了用于控制诸如LED的半导体器件中的电流的技术。对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。对于一些实施例，可以提供电流引导结构和第二电流路径。

33. 发明授权

US07892891B2 Die separation 有权
标题翻译：模具分离
公开(公告)号：US07892891B2
公开(公告)日：2011-02-22
申请号：US11548647
申请日：2006-10-11
申请人： Chen-Fu Chu , Trung Tri Doan , Chuong Anh Tran , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
发明人： Chen-Fu Chu , Trung Tri Doan , Chuong Anh Tran , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/12 , B23K2103/14 , B23K2103/172 , B23K2103/50 , H01L21/78 , H01S5/0201 , H01S5/0202 , H01S5/32341
摘要： Techniques for dicing wafer assemblies containing multiple metal device dies, such as vertical light-emitting diode (VLED), power device, laser diode, and vertical cavity surface emitting laser device dies, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, such techniques are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于切割包含多个金属器件管芯（例如垂直发光二极管（VLED）），功率器件，激光二极管和垂直腔表面发射激光器件管芯的晶片组件的技术。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，在具有原始非（或低）导热和/或非（或低）导电载体的金属器件的高散热率的情况下，这种技术可应用于GaN基电子器件已被去除的底物。

34. 发明申请

US20100298965A1 LED ARRAY 审中-公开
标题翻译： LED阵列
公开(公告)号：US20100298965A1
公开(公告)日：2010-11-25
申请号：US12852321
申请日：2010-08-06
申请人： Wen-Huang Liu , Jui-Kang Yen
发明人： Wen-Huang Liu , Jui-Kang Yen
IPC分类号： H01L21/66 , H01L33/62 , G06F17/00
CPC分类号： H01L25/0753 , G01R31/2635 , H01L33/62 , H01L2224/45144 , H01L2224/48137 , Y10T29/49004 , Y10T29/53022 , H01L2924/00
摘要： Methods for fabricating light-emitting diode (LED) array structures comprising multiple vertical LED stacks coupled to a single metal substrate is provided. The LED array structure may comprise two, three, four, or more LED stacks arranged in any configuration. Each of the LED stacks may have an individual external connection to make a common anode array since the p-doped regions of the LED stacks are all coupled to the metal substrate, or some to all of the n-doped regions of the LED stacks may be electrically connected to create a parallel LED array. Such LED arrays may offer better heat conduction and improved matching of LED characteristics (e.g., forward voltage and emission wavelength) between the individual LED stacks compared to conventional LED arrays.
摘要翻译：提供了包括耦合到单个金属基板的多个垂直LED叠层的制造发光二极管（LED）阵列结构的方法。 LED阵列结构可以包括以任何配置布置的两个，三个，四个或更多个LED堆叠。每个LED堆叠可以具有单独的外部连接以形成公共阳极阵列，因为LED堆叠的p掺杂区域全部耦合到金属衬底，或者LED堆叠的一些至所有n掺杂区域电连接以产生并联LED阵列。与常规LED阵列相比，这样的LED阵列可以提供更好的热传导和改进的LED特征（例如，正向电压和发射波长）的匹配。

35. 发明授权

US07759670B2 Vertical LED with current guiding structure 失效
标题翻译：垂直LED带电流引导结构
公开(公告)号：US07759670B2
公开(公告)日：2010-07-20
申请号：US12136547
申请日：2008-06-10
申请人： Wen-Huang Liu , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
发明人： Wen-Huang Liu , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L33/00 , H01L29/22 , H01L29/24
CPC分类号： H01L33/38 , H01L27/15 , H01L33/385 , H01L33/40 , H01L33/44 , H01L2224/48091 , H01L2224/48465 , H01L2224/4903 , H01L2924/00014 , H01L2924/00
摘要： Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.
摘要翻译：提供了用于控制诸如LED的半导体器件中的电流的技术。对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。对于一些实施例，可以提供电流引导结构和第二电流路径。

36. 外观设计

USD618637S1 Light emitting diode device 有权
公开(公告)号：USD618637S1
公开(公告)日：2010-06-29
申请号：US29346322
申请日：2009-10-30
申请人： Wen-Huang Liu , Li-Wei Shan
设计人： Wen-Huang Liu , Li-Wei Shan

37. 发明授权

US07723718B1 Epitaxial structure for metal devices 有权
标题翻译：金属器件的外延结构
公开(公告)号：US07723718B1
公开(公告)日：2010-05-25
申请号：US11548614
申请日：2006-10-11
申请人： Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
发明人： Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46 , H01S5/0201 , H01S5/0217 , H01S5/32341
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

38. 发明授权

US07687322B1 Method for removing semiconductor street material 有权
标题翻译：去除半导体街道材料的方法
公开(公告)号：US07687322B1
公开(公告)日：2010-03-30
申请号：US11548637
申请日：2006-10-11
申请人： Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
发明人： Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
IPC分类号： H01L21/20
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46 , H01S5/0201 , H01S5/0217 , H01S5/32341
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

39. 发明申请

US20100040821A1 Molding glass lens and mold thereof 失效
公开(公告)号：US20100040821A1
公开(公告)日：2010-02-18
申请号：US11892950
申请日：2007-08-28
申请人： San-Woei Shyu , Chia-Wei Wang , Jau-Jan Deng , Wen-Huang Liu , Chien-Min Wu
发明人： San-Woei Shyu , Chia-Wei Wang , Jau-Jan Deng , Wen-Huang Liu , Chien-Min Wu
IPC分类号： C03B11/00 , B32B3/02
CPC分类号： C03B11/08 , C03B2215/404 , C03B2215/49 , C03B2215/65 , Y10T428/21 , Y10T428/219 , Y10T428/24479 , Y10T428/24488 , Y10T428/24777
摘要： A molding glass lens and a mold thereof are disclosed. The molding glass lens consists of an upper optical surface, a lower optical surface, two outers surrounding the optical surfaces and at least three grooves arranged in the form of a circle disposed on the lower outer and/or the upper outer. The disposition of the grooves has no affecting in original size of the outers as well as assembling with other mechanical parts in les group. The mold of the lens includes an upper molding unit and a lower molding unit. Cavity of each molding unit is composed of a central part for forming an optical surface of the lens and an outer circular part for forming outer of the lens. At least three protrudent parts with the same height are disposed in the form of a circle on the outer circular of the lower molding unit and/or the upper molding unit. Thus the air in the mold cavity is easy to exhaust through the gap formed by protrudent parts and glass preform. Therefore, air bubbles generated during the molding processes are prevented and precision of the glass lens is provided.

40. 外观设计

USD606949S1 Light emitting diode device 有权
标题翻译：发光二极管装置
公开(公告)号：USD606949S1
公开(公告)日：2009-12-29
申请号：US29319676
申请日：2008-06-12
申请人： Wen-Huang Liu
设计人： Wen-Huang Liu

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