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31. 发明授权

US07817695B2 Lateral optically pumped surface-emitting semiconductor laser on a heat sink 有权
标题翻译：横向光泵浦表面发射半导体激光器在散热片上
公开(公告)号：US07817695B2
公开(公告)日：2010-10-19
申请号：US11663617
申请日：2005-09-20
申请人： Tony Albrecht , Stephan Lutgen , Wolfgang Reill , Thomas Schwarz , Ulrich Steegmüller
发明人： Tony Albrecht , Stephan Lutgen , Wolfgang Reill , Thomas Schwarz , Ulrich Steegmüller
IPC分类号： H01S5/00
CPC分类号： H01S5/02248 , H01L2224/48091 , H01L2224/48227 , H01L2924/19107 , H01S3/0815 , H01S3/109 , H01S5/0217 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/183 , H01S5/2027 , H01S5/4056 , H01L2924/00014
摘要： A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting element (18), which is in thermal contact with the semiconductor laser (21) and has a mounting area provided for mounting on a carrier (27). Methods for producing such a surface emitting semiconductor laser device are furthermore described.
摘要翻译：一种表面发射半导体激光器件，包括至少一个具有垂直发射极（1）和至少一个泵浦辐射源（2）的表面发射半导体激光器（21），所述至少一个表面发射半导体激光器（21）沿着彼此一体地堆叠在共同的衬底（13）上，被描述。半导体激光装置还具有与半导体激光器（21）热接触的导热元件（18），并且具有设置用于安装在载体（27）上的安装区域。进一步描述制造这种表面发射半导体激光器件的方法。

32. 发明申请

US20100124246A1 METHOD FOR PRODUCTION OF A PLURALITY OF SEMICODUCTOR CHIPS, AND A SEMICONDUCTOR COMPONENT 有权
标题翻译：生产半导体晶片的方法和半导体元件
公开(公告)号：US20100124246A1
公开(公告)日：2010-05-20
申请号：US11541132
申请日：2006-09-28
申请人： Stephan Lutgen , Tony Albrecht , Wolfgang Reill
发明人： Stephan Lutgen , Tony Albrecht , Wolfgang Reill
IPC分类号： H01S5/026 , H01L21/78 , H01L23/48 , H01L33/62 , H01L23/34 , H01S5/00
CPC分类号： H01S5/0425 , H01L33/0079 , H01L33/0095 , H01L33/641 , H01L2924/0002 , H01S5/02 , H01S5/0217 , H01S5/0224 , H01S5/02476 , H01S5/041 , H01S5/14 , H01L2924/00
摘要： A method for production of a plurality of semiconductor chips (6) in a wafer composite. A semiconductor layer sequence (2) is grown on a growth substrate (1), metallization (3) is applied to the semiconductor layer sequence (2), a metal layer (4) is electrochemically deposited onto the metallization (3), and the semiconductor layer sequence (2) is then structured and separated to form individual semiconductor chips (6). The electrochemically applied metal layer (4) is particularly suitable for use as a heat spreader, for dissipation of the heat produced by the semiconductor chips (6).
摘要翻译：一种用于在晶片复合材料中制造多个半导体芯片（6）的方法。在生长衬底（1）上生长半导体层序列（2），向半导体层序列（2）施加金属化（3），金属层（4）电化学沉积到金属化层（3）上，半导体层序列（2）然后被构造和分离以形成单独的半导体芯片（6）。电化学施加的金属层（4）特别适合用作散热器，用于散发由半导体芯片（6）产生的热量。

33. 发明授权

US07570682B2 VCSEL pumped in a monolithically optical manner and comprising a laterally applied edge emitter 有权
标题翻译： VCSEL以单片光学方式泵送并且包括横向施加的边缘发射器
公开(公告)号：US07570682B2
公开(公告)日：2009-08-04
申请号：US10579528
申请日：2004-11-09
申请人： Tony Albrecht , Peter Brick , Stephan Lutgen
发明人： Tony Albrecht , Peter Brick , Stephan Lutgen
IPC分类号： H01S5/00 , H01S3/091
CPC分类号： H01S5/041 , H01S5/026 , H01S5/0425 , H01S5/14 , H01S5/183 , H01S5/209 , H01S5/4031 , H01S5/4056
摘要： A semiconductor laser device comprising an optically pumped surface-emitting vertical emitter region (2) which has an active radiation-emitting vertical emitter layer (3) and has at least one monolithically integrated pump radiation source (5) for optically pumping the vertical emitter region (2), which has an active radiation-emitting pump layer (6). The pump layer (6) follows the vertical emitter layer (3) in the vertical direction and a conductive layer (13) is provided between the vertical emitter layer (3) and the pump layer (6). Furthermore, a contact (9) is applied on the side of the semiconductor laser device which is closer to the pump layer (6) than to the conductive layer (13). An electrical field can be applied between this contact (9) and the conductive layer (13) for generating pump radiation (7) by charge carrier injection.
摘要翻译：一种半导体激光器件，包括具有有源辐射发射垂直发射极层（3）的光泵浦表面发射垂直发射极区（2），并且具有至少一个单片集成泵浦辐射源（5），用于光学泵浦垂直发射极区（2），其具有主动辐射发射泵浦层（6）。泵层（6）在垂直方向上跟随垂直发射极层（3），并且在垂直发射极层（3）和泵浦层（6）之间提供导电层（13）。此外，在半导体激光器件的比导电层（13）更靠近泵浦层（6）的一侧上施加触点（9）。可以在该触点（9）和导电层（13）之间施加电场，以通过电荷载体注入产生泵浦辐射（7）。

34. 发明申请

US20080153189A1 Method for producing a radiation-emitting-and-receiving semiconductor chip 有权
标题翻译：辐射发射和接收半导体芯片的制造方法
公开(公告)号：US20080153189A1
公开(公告)日：2008-06-26
申请号：US12072365
申请日：2008-02-26
申请人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
发明人： Glenn-Yves Plaine , Tony Albrecht , Peter Brick , Marc Philippens
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L31/173
摘要： A method for producing an integrated semiconductor component comprising a first semiconductor layer construction for emitting radiation and a second semiconductor layer construction for receiving radiation, wherein a substrate is first provided and a first semiconductor layer sequence containing a radiation-generating region is deposited epitaxially on the substrate. A second semiconductor layer sequence containing a radiation-absorbing region is subsequently deposited epitaxially on the first semiconductor layer sequence. The second semiconductor layer sequence is then patterned in order to uncover a first location and a second location. A first semiconductor layer construction is electrically insulated from a second semiconductor layer construction. Finally, a first contact layer is applied to a free surface of the substrate and a second contact layer is applied at least to the first and second locations for contact-connection.
摘要翻译：一种用于制造集成半导体部件的方法，包括用于发射辐射的第一半导体层结构和用于接收辐射的第二半导体层结构，其中首先提供衬底，并且包含辐射产生区的第一半导体层序列外延地沉积在基质。随后在第一半导体层序列上外延沉积包含辐射吸收区的第二半导体层序列。然后将第二半导体层序列图案化以便露出第一位置和第二位置。第一半导体层结构与第二半导体层结构电绝缘。最后，将第一接触层施加到衬底的自由表面，并且至少将第二接触层施加到第一和第二位置用于接触连接。

35. 发明申请

US20080090316A1 Method for manufacture of optically pumped, surface-emitting semiconductor laser device 有权
标题翻译：光泵浦表面发射半导体激光器件的制造方法
公开(公告)号：US20080090316A1
公开(公告)日：2008-04-17
申请号：US11986909
申请日：2007-11-27
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01L21/00
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.
摘要翻译：一种用于制造光泵浦表面发射半导体激光器件的方法，其中将具有量子限制结构的表面发射半导体激光器层序列施加到公共衬底上。除去期望的激光区域外的表面发射半导体激光层序列并暴露区域。将边缘发射半导体层序列施加在公共衬底上的暴露区域上，其中通过去除步骤暴露暴露区域，并且暴露区域适于将泵浦辐射传输到量子限制结构中。然后在边缘发射半导体层序列中形成电流注入路径。

36. 发明申请

US20070201531A1 OPTICALLY PUMPED SEMICONDUCTOR LASER DEVICE 有权
标题翻译：光学泵浦半导体激光器件
公开(公告)号：US20070201531A1
公开(公告)日：2007-08-30
申请号：US10579519
申请日：2004-11-09
申请人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
发明人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
IPC分类号： H01S3/093 , H01S3/081
CPC分类号： H01S5/183 , H01H13/705 , H01H13/86 , H01H2209/07 , H01H2223/008 , H01H2223/034 , H01H2239/032 , H01H2239/034 , H01H2239/038 , H01S3/094084 , H01S5/026 , H01S5/041 , H01S5/101 , H01S5/1082 , H01S5/1085 , H01S5/4031 , H01S5/4056
摘要： An optically pumped semiconductor laser device having a surface-emitting vertical emission region (1) and at least one monolithically integrated pump radiation source (2) for optically pumping the vertical emission region (1). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region (1) in the form of partial bundles of rays of radiation with different radiation directions so that the pump radiation and the fundamental mode of the vertical emission region (1) have an overlap which is suitable for the excitation of this fundamental mode. This device is based on the fact that the fundamental mode of the vertical emission region (1) is preferably excited when the spatial intensity distribution of the pump radiation matches the profile of the fundamental mode.
摘要翻译：一种具有表面发射垂直发射区域（1）和至少一个用于光学泵浦垂直发射区域（1）的单片集成泵浦辐射源（2）的光泵浦半导体激光器件。半导体激光器件的特征在于泵辐射以不同辐射方向的部分束辐射线的形式进入垂直发射区域（1），使得泵浦辐射和垂直发射区域的基本模式 1）具有适合于该基本模式的激励的重叠。该装置基于以下事实：当泵浦辐射的空间强度分布与基本模式的轮廓匹配时，优选地激发垂直发射区域（1）的基本模式。

37. 发明授权

US07224710B2 Optically pumped semiconductor laser apparatus 有权
标题翻译：光泵浦半导体激光装置
公开(公告)号：US07224710B2
公开(公告)日：2007-05-29
申请号：US10666478
申请日：2003-09-19
申请人： Wolfgang Schmid , Tony Albrecht
发明人： Wolfgang Schmid , Tony Albrecht
IPC分类号： H01S5/00 , H01S3/04 , H01S3/09
CPC分类号： H01S5/18372 , H01S5/02461 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/4056
摘要： An optically pumped semiconductor laser apparatus having a vertical emitter (2) and having one pump laser (5) for optically pumping the vertical emitter (2), with the vertical emitter (2) and the pump laser (5) being monolithically integrated. The pump laser (5) and the vertical emitter (2) each have a radiation-emitting zone (3, 6). During operation, the temperature of the radiation-emitting zone (6) of the pump laser (5) is lower than the temperature of the radiation-emitting zone (3) of the vertical emitter (2).
摘要翻译：一种具有垂直发射器（2）并且具有用于光学泵浦垂直发射器（2）的一个泵激光器（5）的光泵浦半导体激光装置，垂直发射器（2）和泵浦激光器（5）被整体地集成。泵浦激光器（5）和垂直发射器（2）各自具有辐射发射区（3,6）。在操作期间，泵浦激光器（5）的辐射发射区域（6）的温度低于垂直发射器（2）的辐射发射区域（3）的温度。

38. 发明申请

US20070041414A1 Semiconductor laser showing reduced sensitivity to disturbances 审中-公开
标题翻译：半导体激光器对干扰的灵敏度降低
公开(公告)号：US20070041414A1
公开(公告)日：2007-02-22
申请号：US10550994
申请日：2004-02-23
申请人： Tony Albrecht , Peter Brick , Marc Philippens , Glenn-Yves Plaine
发明人： Tony Albrecht , Peter Brick , Marc Philippens , Glenn-Yves Plaine
IPC分类号： H01S5/00
CPC分类号： H01S5/18377 , H01S5/2022 , H01S2301/02 , H01S2301/163
摘要： A semiconductor laser, contains at least one absorbing layer (8) in its laser resonator, said absorbing layer reducing the transmission TRes of the laser radiation (10) in the laser resonator for the purpose of decreasing the sensitivity of the semiconductor laser to disturbances created by radiation (9) fed back into the laser resonator. This reduces fluctuations in the output power due to fed-back radiation (9).
摘要翻译：半导体激光器在其激光谐振器中包含至少一个吸收层（8），所述吸收层减少了激光谐振器中的激光辐射（10）的透射率T res，以减少半导体激光器对由反馈到激光谐振器中的辐射（9）产生的干扰的灵敏度。这减少了由反馈辐射引起的输出功率的波动（9）。

39. 发明授权

US07023894B2 Optically pumped semiconductor laser and method for producing the same 失效
标题翻译：光泵浦半导体激光器及其制造方法
公开(公告)号：US07023894B2
公开(公告)日：2006-04-04
申请号：US10679153
申请日：2003-10-10
申请人： Tony Albrecht
发明人： Tony Albrecht
IPC分类号： H01S3/091 , H01S5/00
CPC分类号： H01S3/091 , H01S3/092 , H01S3/0941 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/183 , H01S5/187 , H01S5/34 , H01S5/40
摘要： An optically pumped semiconductor laser device having a substrate (12) having a first main area (14) and a second main area (16), a pump laser (30) and a vertically emitting laser (40) optically pumped by the pump laser (30) being arranged on the first main area (14). The first main area (14) of the substrate (12) is patterned and has first regions (20) situated at a higher level and also second regions (18) situated at a lower level. The pump laser (30) is arranged on a region (20) situated at a higher level of the substrate (12), and the vertically emitting laser (40) is arranged above intermediate layers (50, 30′) on a region (18) situated at a lower level of the substrate (12). The height difference (Δ) between the first (20) and second (18) regions of the substrate (12) and the layer thickness of the intermediate layers (50, 30′) is chosen in such a way that the pump laser (30) and the vertically emitting laser (40) are situated at the same level. A substrate which is patterned in this way enables semiconductor layers of the pump laser and of the vertically emitting laser to be applied together in a single epitaxy step.
摘要翻译：一种具有第一主区域（14）和第二主区域（16）的基板（12）的光泵浦半导体激光装置，由泵浦激光器光泵浦的泵浦激光器（30）和垂直发射激光器（40） 30）布置在第一主区域（14）上。衬底（12）的第一主区域（14）被图案化，并且具有位于更高级别的第一区域（20）以及位于较低级别的第二区域（18）。泵浦激光器（30）布置在位于基板（12）的较高级的区域（20）上，并且垂直发射激光器（40）布置在区域（18）上的中间层（50,30'）之上）位于基底（12）的较低水平处。选择基板（12）的第一（20）和第二（18）区域之间的高度差（Delta）和中间层（50,30'）的层厚度，使得泵浦激光器）和垂直发射激光器（40）位于同一水平。以这种方式图案化的衬底使得泵浦激光器和垂直发射激光器的半导体层能够在单个外延步骤中一起施加。

40. 发明授权

US06973113B2 Optically pumped semiconductor laser device 有权
标题翻译：光泵浦半导体激光器件
公开(公告)号：US06973113B2
公开(公告)日：2005-12-06
申请号：US10444800
申请日：2003-05-23
申请人： Tony Albrecht , Norbert Linder , Wolfgang Schmid
发明人： Tony Albrecht , Norbert Linder , Wolfgang Schmid
IPC分类号： H01S5/026 , H01S5/04 , H01S5/10 , H01S5/183 , H01S3/091
CPC分类号： H01S5/18305 , H01S5/026 , H01S5/041 , H01S5/18388 , H01S5/4056 , H01S2301/166
摘要： An optically pumped semiconductor laser device having a substrate (1) having a first main area (2) and a second main area (3), with at least one pump laser (11) being arranged on the first main area (2). The semiconductor laser device comprises a vertically emitting laser (4) having a resonator having a first mirror (9) being arranged on the side of the first main area (2) and a second mirror (20) being arranged on the side of the second main area (3) of the substrate (1).
摘要翻译：一种光泵浦半导体激光装置，其具有具有第一主区域（2）和第二主区域（3）的基板（1），其中至少一个泵浦激光器（11）布置在第一主区域（2）上。半导体激光器件包括具有谐振器的垂直发射激光器（4），该谐振器具有布置在第一主区域（2）侧面上的第一反射镜（9）和布置在第二主体侧面上的第二反射镜（20）基板（1）的主区域（3）。

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