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31. 发明授权

US07141876B2 Semiconductor device 有权
公开(公告)号：US07141876B2
公开(公告)日：2006-11-28
申请号：US11280464
申请日：2005-11-17
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H01L23/48 , H01L23/52 , H01R11/00
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

32. 发明授权

US07123094B2 High frequency power amplifier circuit and radio communication system 失效
标题翻译：高频功率放大器电路和无线电通信系统
公开(公告)号：US07123094B2
公开(公告)日：2006-10-17
申请号：US10821935
申请日：2004-04-12
申请人： Kenji Tahara , Takayuki Tsutsui , Tetsuaki Adachi
发明人： Kenji Tahara , Takayuki Tsutsui , Tetsuaki Adachi
IPC分类号： H03G3/30
CPC分类号： H03F1/0211 , H03F2200/408 , H03G3/3047
摘要： Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.
摘要翻译：提供可以通过电源电压来控制输出功率的高频功率放大器电路和无线电通信系统，在需求输出功率的高区域产生足够的输出功率，并提高所需输出功率的低区域的功率效率。在一个高频功率放大器电路（RF功率模块）中，包括两个或更多级联的FET，用于放大，并通过控制用于放大到预定电平的偏置电压的栅极端子的FET的电源电压来控制输出功率，不同的晶体管为用于放大的最后一级FET和用于放大的前级FET提供电源电压控制。用于电源电压控制的晶体管产生并施加电源电压，使得当需求输出电平相对较低时，用于放大的前级FET饱和。

33. 发明申请

US20060076620A1 Semiconductor device 有权
公开(公告)号：US20060076620A1
公开(公告)日：2006-04-13
申请号：US11280464
申请日：2005-11-17
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H01L29/76
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

34. 发明申请

US20050269590A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050269590A1
公开(公告)日：2005-12-08
申请号：US11194701
申请日：2005-08-02
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/04 , H01L23/49 , H01L23/498 , H01L23/552 , H01L23/66 , H01L29/22 , H03F3/195 , H03F3/60 , H05K1/00 , H05K1/02 , H05K1/18 , H05K3/40
CPC分类号： H01L24/06 , H01L23/04 , H01L23/49805 , H01L23/49822 , H01L23/49838 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2223/6611 , H01L2223/6627 , H01L2223/6644 , H01L2223/6655 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/45139 , H01L2224/45147 , H01L2224/4554 , H01L2224/45669 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/4912 , H01L2224/49175 , H01L2224/49433 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/15173 , H01L2924/15313 , H01L2924/15787 , H01L2924/16152 , H01L2924/19032 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/411 , H03F2200/423 , H03F2200/451 , H03F2200/543 , H03H7/383 , H05K1/0243 , H05K1/0298 , H05K1/183 , H05K3/403 , H01L2924/05432 , H01L2924/2065 , H01L2224/45099 , H01L2924/00
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

35. 发明申请

US20050206456A1 High frequency power amplifier module and wireless communication apparatus 审中-公开
标题翻译：高频功率放大器模块和无线通信设备
公开(公告)号：US20050206456A1
公开(公告)日：2005-09-22
申请号：US11130120
申请日：2005-05-17
申请人： Masashi Suzuki , Hitoshi Akamine , Tetsuaki Adachi , Takahiro Sato , Masashi Maruyama , Susumu Takada
发明人： Masashi Suzuki , Hitoshi Akamine , Tetsuaki Adachi , Takahiro Sato , Masashi Maruyama , Susumu Takada
IPC分类号： H01L27/04 , H01L21/822 , H01L27/06 , H03F1/30 , H03F3/193 , H03F3/20 , H03F3/213 , H03F3/24 , H03F3/68 , H03G3/30 , H04B1/03 , H04B1/04
CPC分类号： H01L27/0629 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2924/13091 , H03F1/301 , H03F3/193 , H03F2200/294 , H03F2200/372 , H03G3/3042 , H03G2201/103 , H03G2201/206 , H03G2201/307 , H03G2201/40 , H01L2924/00014 , H01L2924/00
摘要： The number of components of a high frequency power amplifier is reduced. A bias resistance ratio is adjusted in accordance with a change in the threshold voltage Vth of a transistor. A high frequency power amplifier has a plurality of amplifying systems. Each of these systems has an input terminal to which a signal to be amplified is supplied, an output terminal, a bias terminal, a plurality of amplifying stages which are sequentially cascaded between the input and output terminals, and a bias circuit connected to the bias terminal and each of the amplifying stages to apply a bias potential to the amplifying stage. The amplifying stage includes a control terminal for receiving an input signal and the bias potential supplied to the stage and a first terminal for transmitting an output signal of the stage.
摘要翻译：高频功率放大器的组件数量减少。根据晶体管的阈值电压Vth的变化来调整偏置电阻比。高频功率放大器具有多个放大系统。这些系统中的每一个都具有供给要被放大的信号的输入端子，输出端子，偏置端子，在输入和输出端子之间顺序级联的多个放大级，以及连接到偏置电路的偏置电路端子和每个放大级以向放大级施加偏置电位。放大级包括用于接收输入信号和提供给级的偏置电位的控制端子和用于发送级的输出信号的第一端子。

36. 发明授权

US06900694B2 High frequency power amplifier module and wireless communication apparatus 有权
公开(公告)号：US06900694B2
公开(公告)日：2005-05-31
申请号：US10799673
申请日：2004-03-15
申请人： Masashi Suzuki , Hitoshi Akamine , Tetsuaki Adachi , Takahiro Sato , Masashi Maruyama , Susumu Takada
发明人： Masashi Suzuki , Hitoshi Akamine , Tetsuaki Adachi , Takahiro Sato , Masashi Maruyama , Susumu Takada
IPC分类号： H01L27/04 , H01L21/822 , H01L27/06 , H03F1/30 , H03F3/193 , H03F3/20 , H03F3/213 , H03F3/24 , H03F3/68 , H03G3/30 , H04B1/03 , H04B1/04 , H03G5/16
CPC分类号： H01L27/0629 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H03F1/301 , H03F3/193 , H03F2200/294 , H03F2200/372 , H03G3/3042 , H03G2201/103 , H03G2201/206 , H03G2201/307 , H03G2201/40 , H01L2924/00014
摘要： The number of components of a high frequency power amplifier is reduced. A bias resistance ratio is adjusted in accordance with a change in the threshold voltage Vth of a transistor. A high frequency power amplifier has a plurality of amplifying systems. Each of these systems has an input terminal to which a signal to be amplified is supplied, an output terminal, a bias terminal, a plurality of amplifying stages which are sequentially cascaded between the input and output terminals, and a bias circuit connected to the bias terminal and each of the amplifying stages to apply a bias potential to the amplifying stage. The amplifying stage includes a control terminal for receiving an input signal and the bias potential supplied to the stage and a first terminal for transmitting an output signal of the stage.

37. 发明授权

US06897728B2 High frequency power amplifier module and wireless communication system 有权
标题翻译：高频功率放大器模块和无线通信系统
公开(公告)号：US06897728B2
公开(公告)日：2005-05-24
申请号：US10614015
申请日：2003-07-08
申请人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
发明人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
IPC分类号： H03F3/189 , H01L29/10 , H01L29/417 , H01L29/78 , H01Q11/12 , H03F1/02 , H03F1/22 , H03F1/32 , H03F3/60 , H03F3/72 , H03G1/00 , H04B1/04 , H04K1/02 , H03F3/16
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/4175 , H01L29/7831 , H01L2924/0002 , H03F1/02 , H03F1/223 , H03F3/24 , H03F3/601 , H03F3/72 , H03F2203/7206 , H03G1/007 , H04B2001/045 , H01L2924/00
摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).
摘要翻译：一种多级放大器结构的高频功率放大器模块，包括：输入端子; 输出端子; 一个控制终端; 和模式切换终端。第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号端子施加到第二栅极，例如双栅极FET的源极。根据来自模式切换端子的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。

38. 发明申请

US20050009484A1 High frequency power amplifier module and semiconductor integrated circuit device 有权
标题翻译：高频功率放大器模块和半导体集成电路器件
公开(公告)号：US20050009484A1
公开(公告)日：2005-01-13
申请号：US10862325
申请日：2004-06-08
申请人： Shun Imai , Satoshi Sasaki , Katsunari Nakazawa , Tetsuaki Adachi
发明人： Shun Imai , Satoshi Sasaki , Katsunari Nakazawa , Tetsuaki Adachi
IPC分类号： H01L21/331 , H01L29/737 , H03F3/195 , H03F3/60 , H04B1/04 , H04B1/00
CPC分类号： H04B1/005 , H01L2224/0603 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2924/3011 , H01L2924/30111 , H03F3/195 , H03F3/24 , H03F3/602 , H03F2200/39 , H04B2001/0408 , H01L2924/00014 , H01L2924/00
摘要： Cross-band isolation characteristics are to be significantly improved without using any filtering circuit. In the central part of a semiconductor chip provided in an RF power module is formed a ground wiring layer from the upper part downward. This ground wiring layer is formed on the boundary between GSM side transistors and DCS side transistors for amplifying different frequency bands. Over the ground wiring layer are formed chip electrodes at equal intervals, and any one of the chip electrodes is connected via a bonding wire to a bonding electrode. The bonding electrode is formed over a module wiring board over which the semiconductor chip is to be mounted, and the ground wiring layer is connected to it. Harmonic signals are trapped by the ground wiring layer and the bonding wire.
摘要翻译：在不使用任何滤波电路的情况下，跨频带隔离特性得到显着提高。在RF功率模块中设置的半导体芯片的中心部分从上部向下形成接地布线层。该接地布线层形成在GSM侧晶体管与用于放大不同频带的DCS侧晶体管之间的边界上。在接地布线层上形成有相等间隔的芯片电极，并且任一个芯片电极通过接合线连接到接合电极。接合电极形成在要安装半导体芯片的模块布线板上，并且接地布线层与其连接。谐波信号被接地布线层和接合线捕获。

39. 发明授权

US06731167B2 High frequency power amplifier module and wireless communication apparatus 有权
标题翻译：高频功率放大器模块和无线通信设备
公开(公告)号：US06731167B2
公开(公告)日：2004-05-04
申请号：US09961250
申请日：2001-09-25
申请人： Masashi Suzuki , Hitoshi Akamine , Tetsuaki Adachi , Takahiro Sato , Masashi Maruyama , Susumu Takada
发明人： Masashi Suzuki , Hitoshi Akamine , Tetsuaki Adachi , Takahiro Sato , Masashi Maruyama , Susumu Takada
IPC分类号： H03G516
CPC分类号： H01L27/0629 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H03F1/301 , H03F3/193 , H03F2200/294 , H03F2200/372 , H03G3/3042 , H03G2201/103 , H03G2201/206 , H03G2201/307 , H03G2201/40 , H01L2924/00014
摘要： The number of components of a high frequency power amplifier is reduced. A bias resistance ratio is adjusted in accordance with a change in the threshold voltage Vth of a transistor. A high frequency power amplifier has a plurality of amplifying systems. Each of these systems has an input terminal to which a signal to be amplified is supplied, an output terminal, a bias terminal, a plurality of amplifying stages which are sequentially cascaded between the input and output terminals, and a bias circuit connected to the bias terminal and each of the amplifying stages to apply a bias potential to the amplifying stage. The amplifying stage includes a control terminal for receiving an input signal and the bias potential supplied to the stage and a first terminal for transmitting an output signal of the stage.
摘要翻译：高频功率放大器的组件数量减少。根据晶体管的阈值电压Vth的变化来调整偏置电阻比。高频功率放大器具有多个放大系统。这些系统中的每一个都具有供给要被放大的信号的输入端子，输出端子，偏置端子，在输入和输出端子之间顺序级联的多个放大级，以及连接到偏置的偏置电路端子和每个放大级以向放大级施加偏置电位。放大级包括用于接收输入信号和提供给级的偏置电位的控制端子和用于发送级的输出信号的第一端子。

40. 发明授权

US06658243B2 High frequency power amplifying apparatus having amplifying stages with gain control signals of lower amplitudes applied to earlier preceding stages 失效
公开(公告)号：US06658243B2
公开(公告)日：2003-12-02
申请号：US10199319
申请日：2002-07-22
申请人： Hitoshi Akamine , Nobuhiko Ishihara , Tetsuaki Adachi , Yasuhiro Nunogawa , Kogi Sugita
发明人： Hitoshi Akamine , Nobuhiko Ishihara , Tetsuaki Adachi , Yasuhiro Nunogawa , Kogi Sugita
IPC分类号： H04B700
CPC分类号： H01L23/66 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/48 , H01L2224/49175 , H01L2924/00014 , H01L2924/01005 , H01L2924/01019 , H01L2924/01024 , H01L2924/014 , H01L2924/10161 , H01L2924/10162 , H01L2924/1306 , H01L2924/13091 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03G3/3042 , H03G3/3047 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A high frequency power amplifying apparatus is provided with an amplifying section with a plurality of amplifying stages connected in cascade. A power control signal is supplied to the amplifying section through a control terminal so as to control the output of the high frequency power amplifying apparatus. Each of the amplifying stages has a gain smaller than that of a preceding stage. Gain control signals generated from the power control signal are supplied to the respective amplifying stages. Dividing resistors are connected in series with one another between the control terminal and a reference potential so as to divide the voltage of the power control signal to thereby generate a plurality of different gain control signals. Different ones of the gain control signals are supplied to the respective amplifying stages, an absolute value of a voltage of the gain control signal applied to each stage is smaller than that applied to an earlier preceding stage.

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