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    • 32. 发明授权
    • Semiconductor optical integrated circuits and method for fabricating the
same
    • 半导体光集成电路及其制造方法
    • US5770466A
    • 1998-06-23
    • US400570
    • 1995-03-08
    • Tatsuya SasakiMitsuhiro KitamuraKiichi HamamotoShotaro KitamuraKeiro KomatsuYasutaka Sakata
    • Tatsuya SasakiMitsuhiro KitamuraKiichi HamamotoShotaro KitamuraKeiro KomatsuYasutaka Sakata
    • H01S5/026H01S5/0625H01S5/10H01S5/125H01S5/20H01S5/227H01S5/40H01L21/20
    • H01S5/4031H01S5/026H01S5/06256H01S2304/04H01S5/0265H01S5/06258H01S5/1003H01S5/125H01S5/2077H01S5/2272H01S5/4025H01S5/4068H01S5/4087
    • A semiconductor optical monolithic integration device has a semiconductor substrate including an active region and a passive region. Epitaxial layers including a multiple quantum well structure have a variation in band gap energy and thickness along a waveguide direction. The epitaxial layers in the active region are selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in the active region except in the passive region. The first mask pattern has a variation in width along the waveguide direction. The epitaxial layers are simultaneously and non-selectively grown on an entire surface of the passive region by the metal organic vapor phase epitaxy and the epitaxial layers have a mesa structure in the active region and a plane structure in the passive region. A cladding layer having a ridged structure is selectively grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in the active and passive regions. The second mask pattern has a constant width. In the active region, the ridged cladding layer completely embeds the mesa structure epitaxial layers and in the passive region the ridged cladding layer are provided on the plane structure epitaxial layers.
    • 半导体光学单片集成器件具有包括有源区和被动区的半导体衬底。 包括多量子阱结构的外延层具有沿着波导方向的带隙能量和厚度的变化。 有源区中的外延层通过金属有机气相外延选择性地生长在由除了被动区域之外的有源区域中提供的第一掩模图案限定的第一选择性增长区域上。 第一掩模图案沿波导方向具有宽度变化。 外延层通过金属有机气相外延在无源区的整个表面上同时且非选择性地生长,并且外延层在有源区中具有台面结构和在被动区中具有平面结构。 通过在由有源和无源区域中提供的第二掩模图案限定的第二选择性增长区域上的金属有机气相外延选择性地生长具有脊状结构的覆层。 第二掩模图案具有恒定的宽度。 在有源区域中,脊状覆层完全嵌入台面结构外延层,并且在无源区域中,脊状覆层设置在平面结构外延层上。
    • 33. 发明授权
    • Semiconductor optical integrated circuits
    • 半导体光集成电路
    • US5565693A
    • 1996-10-15
    • US179049
    • 1994-01-07
    • Tatsuya SasakiMitsuhiro KitamuraKiichi HamamotoShotaro KitamuraKeiro KomatsuYasutaka Sakata
    • Tatsuya SasakiMitsuhiro KitamuraKiichi HamamotoShotaro KitamuraKeiro KomatsuYasutaka Sakata
    • H01S5/026H01S5/0625H01S5/10H01S5/125H01S5/20H01S5/227H01S5/40H01L33/00
    • H01S5/4031H01S5/026H01S5/06256H01S2304/04H01S5/0265H01S5/06258H01S5/1003H01S5/125H01S5/2077H01S5/2272H01S5/4025H01S5/4068H01S5/4087
    • A semiconductor optical monolithic integration device comprises a semiconductor substrate including an active region and a passive region. Epitaxial layers including a multiple quantum well structure have a variation in band gap energy and thickness along a waveguide direction. The epitaxial layers in the active region are selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in the active region except in the passive region. The first mask pattern has a variation in width along the waveguide direction. The epitaxial layers are simultaneously and non-selectively grown on the entirety of the passive region by metal organic vapor phase epitaxy and epitaxial layers having a mesa structure in the active region and a plane structure in the passive region are formed. A cladding layer having a ridged structure is selectively grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in both the active and passive regions. The second mask pattern has a constant width. In the active region the ridged cladding layer completely embeds the mesa structure epitaxial layers and in the passive region the ridged cladding layer is provided on the plane structure epitaxial layers.
    • 半导体光学单片集成器件包括包括有源区和无源区的半导体衬底。 包括多量子阱结构的外延层具有沿着波导方向的带隙能量和厚度的变化。 有源区中的外延层通过金属有机气相外延选择性地生长在由除了被动区域之外的有源区域中提供的第一掩模图案限定的第一选择性增长区域上。 第一掩模图案沿波导方向具有宽度变化。 外延层通过金属有机气相外延在整个无源区上同时且非选择性地生长,并且在有源区中具有台面结构并形成无源区中的平面结构的外延层。 具有脊状结构的包覆层通过金属有机气相外延选择性地生长在由在有源区域和被动区域中提供的第二掩模图案限定的第二选择性增长区域上。 第二掩模图案具有恒定的宽度。 在有源区域中,脊状覆层完全嵌入台面结构外延层,并且在无源区域中,脊状覆层设置在平面结构外延层上。