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31. 发明授权

US07745077B2 Composition for coating over a photoresist pattern 有权
标题翻译：用于在光致抗蚀剂图案上涂覆的组合物
公开(公告)号：US07745077B2
公开(公告)日：2010-06-29
申请号：US12141307
申请日：2008-06-18
申请人： Muthiah Thiyagarajan , Yi Cao , Sung Eun Hong , Ralph R. Dammel
发明人： Muthiah Thiyagarajan , Yi Cao , Sung Eun Hong , Ralph R. Dammel
IPC分类号： G03F7/30
CPC分类号： C09D133/14 , C09D133/066 , C09D139/00 , G03F7/40
摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1), where, R1 to R5 are independently selected from hydrogen and C1 to C6 alkyl, and W is C1 to C6 alkyl. The invention also relates to a process for imaging a photoresist layer using the present composition.
摘要翻译：本发明涉及用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有至少一个具有烷基氨基的单元的聚合物，其中该单元具有结构（1），其中R 1至R 5独立地选自氢和C 1 至C6烷基，W为C1至C6烷基。本发明还涉及使用本发明组合物对光致抗蚀剂层进行成像的方法。

32. 发明申请

US20080193880A1 Water Soluble Resin Composition and Method for Pattern Formation Using the Same 有权
标题翻译：水溶性树脂组合物及其形成方法
公开(公告)号：US20080193880A1
公开(公告)日：2008-08-14
申请号：US11547707
申请日：2005-04-08
申请人： Takeshi Nishibe , Sung Eun Hong , Yusuke Takano , Tetsuo Okayasu
发明人： Takeshi Nishibe , Sung Eun Hong , Yusuke Takano , Tetsuo Okayasu
IPC分类号： G03F7/004
CPC分类号： G03F7/40 , H01L21/0273 , Y10S430/106 , Y10S430/11 , Y10S430/115 , Y10S430/162 , Y10S430/165
摘要： In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.
摘要翻译：在本发明中，在用于图案形成方法的水溶性树脂组合物中，其中在由能够应对ArF曝光的辐射敏感性树脂组合物形成的抗蚀剂图案上设置覆盖层以增加其宽度抗蚀剂图案，从而实现有效形成更高密度的沟槽或孔图案，与现有技术相比，抗蚀剂图案层的尺寸减小水平可以进一步提高，另外，尺寸缩小级依赖性可以减少粗细和抗蚀剂图案。还提供了使用水溶性树脂组合物的图案形成方法。可用于适用于ArF准分子激光照射的图案形成方法的水溶性树脂组合物包括水溶性树脂，加热时能产生酸的酸产生剂，表面活性剂，交联剂和含水的溶剂。

33. 发明授权

US06984482B2 Top-coating composition for photoresist and process for forming fine pattern using the same 失效
标题翻译：用于光致抗蚀剂的顶涂组合物和使用其形成精细图案的方法
公开(公告)号：US06984482B2
公开(公告)日：2006-01-10
申请号：US10174497
申请日：2002-06-17
申请人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7/11 , G03F7/09 , G03F7/00
CPC分类号： G03F7/11 , G03F7/0045
摘要： The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.
摘要翻译：本发明提供一种包覆组合物，其包含用于涂覆光致抗蚀剂组合物以提供垂直光致抗蚀剂图案的碱性化合物。

34. 发明申请

US20050221236A1 Process for preventing development defect and composition for use in the same 有权
标题翻译：用于预防发展缺陷和组合物的方法
公开(公告)号：US20050221236A1
公开(公告)日：2005-10-06
申请号：US10518105
申请日：2003-06-10
申请人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
发明人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
IPC分类号： G03F7/11 , G03F7/16 , G03F7/38 , H01L21/027 , G03F7/40
CPC分类号： G03F7/11 , G03F7/168
摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.
摘要翻译：用于防止含有（1）C 4的铵盐，四烷基铵盐或C 1〜C 4烷醇胺盐的显影缺陷的组合物的全氟烷基羧酸，C 4〜C 10全氟烷基磺酸和全氟己二酸，或（2）氟代烷基季铵盐无机酸，其中所述表面活性剂以相对于酸与碱的比例为1:1:1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

35. 发明授权

US06770414B2 Additive for photoresist composition for resist flow process 失效
标题翻译：光刻胶组合物用于抗蚀剂流程的添加剂
公开(公告)号：US06770414B2
公开(公告)日：2004-08-03
申请号：US09878803
申请日：2001-06-11
申请人： Min Ho Jung , Sung Eun Hong , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
发明人： Min Ho Jung , Sung Eun Hong , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F700
CPC分类号： G03F7/0395 , C07J9/00 , G03F7/0045 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10T428/24802
摘要： The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.
摘要翻译：本发明提供了用于抗蚀剂流动方法的光致抗蚀剂组合物的添加剂。将具有低玻璃化转变温度的下述式1化合物加入含有聚合物的光致抗蚀剂组合物中，该聚合物由于其玻璃化转变温度高而不适于抗蚀剂流动过程，从而改善光致抗蚀剂组合物的流动性能。结果，包含式1的添加剂的光致抗蚀剂组合物可用于抗蚀剂流动过程。其中A，B，R和R'如本发明的说明书中所定义。

36. 发明授权

US06602650B2 Organic anti-reflective coating polymer, anti-reflective coating composition comprising the same and methods of preparation thereof 有权
标题翻译：有机抗反射涂层聚合物，包含其的抗反射涂料组合物及其制备方法
公开(公告)号：US06602650B2
公开(公告)日：2003-08-05
申请号：US10099295
申请日：2002-03-13
申请人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
IPC分类号： G03C176
CPC分类号： C08F220/36 , C07C251/54 , C08F220/40 , G03F7/091 , Y10S430/111 , C08F2220/281 , C08F216/38
摘要： A compound of Formula 10, an organic anti-reflective polymer having the structure of Formula 1 synthesized from the compound of Formula 1 and a preparation method thereof. An anti-reflective coating composition including the above organic anti-reflective polymer, as well as a preparation method of an anti-reflective coating. The anti-reflective coating comprising the disclosed polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the changes in the thickness of the photoresist, prevents back reflection and also solves the problem of CD alteration cause by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and an increase of the production yields. Further, it is also possible to control the k value
摘要翻译：式10的化合物，由式1化合物合成的具有结构式1的有机抗反射聚合物及其制备方法。包含上述有机抗反射聚合物的抗反射涂料组合物以及抗反射涂层的制备方法。包含所公开的聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，防止背反射，并且还解决了衍射和来自这种较低层的反射光。这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定的超细格局，并且提高了产量。此外，还可以控制k值

37. 发明授权

US06599678B2 Organic anti-reflective coating polymer, anti-reflective coating composition comprising the same and method of preparation thereof 有权
公开(公告)号：US06599678B2
公开(公告)日：2003-07-29
申请号：US09888829
申请日：2001-06-25
申请人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Jae-chang Jung , Geun-su Lee , Ki-ho Baik
IPC分类号： G03C176
CPC分类号： G03F7/091 , C08F220/36 , Y10S430/106 , Y10S430/111
摘要： An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the disclosed polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and improve the production yields. Further, it is also possible to control the k value and the increased hydrophobicity facilitates EBR (Edge Bead Removal).

38. 发明授权

US06548613B2 Organic anti-reflective coating polymer and preparation thereof 有权
标题翻译：有机抗反射涂层聚合物及其制备方法
公开(公告)号：US06548613B2
公开(公告)日：2003-04-15
申请号：US09747364
申请日：2000-12-22
申请人： Min-Ho Jung , Sung-Eun Hong , Jae-Chang Jung , Geun-Su Lee , Ki-Ho Baik
发明人： Min-Ho Jung , Sung-Eun Hong , Jae-Chang Jung , Geun-Su Lee , Ki-Ho Baik
IPC分类号： C08F22018
CPC分类号： C08F220/34 , G03F7/091
摘要： The present invention provides a polymer that can be used as an anti-refelctive coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm), ArF (193 nm), or F2 (157 nm) laser as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64 M, 256 M, 1 G, 4 G and 16 G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield, of such semiconductor devices.
摘要翻译：本发明提供可用作抗反射涂层（ARC）聚合物的聚合物，包含其的ARC组合物，其制备方法及其使用方法。本发明的聚合物在亚微光刻工艺中特别有用，例如使用KrF（248nm），ArF（193nm）或F2（157nm）激光作为光源。本发明的聚合物包括能够吸收在亚微光刻工艺中使用的波长的光的发色团。因此，本发明的ARC显着地减少或防止了光的反射和由衍射光和/或反射光引起的CD改变的问题。本发明的ARC还显着地减少或消除驻波效应和反射性切口。因此，本发明的聚合物可用于制备适合于制造64M，256M，1G，4G和16G DRAM半导体器件的稳定超细晶格。此外，本发明的ARC显着提高了这种半导体器件的生产成本。

39. 发明授权

US06489423B2 Organic anti-reflective polymer and method for manufacturing thereof 有权
标题翻译：有机抗反射聚合物及其制造方法
公开(公告)号：US06489423B2
公开(公告)日：2002-12-03
申请号：US10095852
申请日：2002-03-11
申请人： Min-ho Jung , Sung-eun Hong , Ki-ho Baik
发明人： Min-ho Jung , Sung-eun Hong , Ki-ho Baik
IPC分类号： C08F22012
CPC分类号： C08F220/34 , C07C251/66 , C08F2220/281 , C08F2220/325 , C08F220/14
摘要： Polymers are disclosed having the following formula 1 or 2: Polymers of the present invention can be used as an ARC material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain a chromophore substituent that exhibits sufficient absorbance at the wavelengths useful for the submicrolithography process. The ARC prevents back reflection of light from lower layers and the alteration of the CD by diffracted and reflected light from the lower layers. The ARC also eliminates standing waves and reflective notching due to the optical properties of lower layers on the wafer and to changes in the thickness of the photosensitive film applied thereon, thereby resulting in the stable formation of ultrafine patterns suitable for 64 M, 256 M, 1 G, 4 G and 16 G DRAMs and a great improvement in the production yield.
摘要翻译：公开了具有下式1或2的聚合物：本发明的聚合物可以用作ARC光学材料，用于使用248nm KrF，193nm ArF和157nm F2激光的亚微光刻工艺。聚合物含有在用于亚微光刻工艺的波长处表现出足够吸光度的发色团取代基。 ARC防止来自下层的光的背反射和来自下层的衍射和反射光的CD的改变。由于晶片上的较低层的光学性质和施加在其上的感光膜的厚度的变化，ARC还消除了驻波和反射凹陷，从而导致适合于64M，256M， 1G，4G和16G DRAM，并且生产产量大大提高。

40. 发明授权

US06350818B1 Anti reflective coating polymers and the preparation method thereof 失效
标题翻译：防反射涂料聚合物及其制备方法
公开(公告)号：US06350818B1
公开(公告)日：2002-02-26
申请号：US09413679
申请日：1999-10-07
申请人： Sung-Eun Hong , Min-Ho Jung , Hyeong-Soo Kim , Ki-Ho Baik
发明人： Sung-Eun Hong , Min-Ho Jung , Hyeong-Soo Kim , Ki-Ho Baik
IPC分类号： C08F834
CPC分类号： C08F212/14 , C08F8/34 , G03F7/023 , G03F7/091 , C08F12/14 , C08F220/20
摘要： The present invention relates to organic anti-reflective coating polymers and preparation methods therefor. Anti-reflective coatings are used in a semiconductor device during photolithography processes to prevent the reflection of light from lower layers of the device, or resulting from changes in the thickness of the photoresist layer, and to eliminate the standing wave effect when ArF light is used. The present invention also relates to anti-reflective compositions and coatings containing these organic anti-reflective coating polymers, alone or in combination with certain light-absorbing compounds, and preparation methods therefor. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming submicro-patterns, the resultant elimination of changes in CD due to diffractive and reflective lights originating from lower layers increases the product yield in the formation of submicro-patterns during the manufacture of 64 M, 256 M, 1G, 4G and 16G DRAM semiconductor devices.
摘要翻译：本发明涉及有机抗反射涂层聚合物及其制备方法。在光刻工艺中，抗反射涂层用于半导体器件，以防止来自器件的下层的光的反射，或由于光致抗蚀剂层的厚度的变化而导致的，并且当使用ArF光时消除驻波效应。本发明还涉及包含这些有机抗反射涂层聚合物的抗反射组合物和涂层，其单独或与某些光吸收化合物组合，及其制备方法。当本发明的聚合物在用于形成亚微图案的光刻工艺中用于抗反射涂层中时，由于衍生于较低层的衍射和反射光引起的CD的变化的消除增加了在形成在64M，256M，1G，4G和16G DRAM半导体器件的制造期间的微小图案。

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