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31. 发明授权

US06889162B1 Wafer target design and method for determining centroid of wafer target 有权
标题翻译：晶圆目标设计及确定晶圆靶材重心的方法
公开(公告)号：US06889162B1
公开(公告)日：2005-05-03
申请号：US09520686
申请日：2000-03-07
申请人： Bryan Hubbard , Pierre Leroux
发明人： Bryan Hubbard , Pierre Leroux
IPC分类号： G03F1/08 , G03F7/22 , G03F9/00 , H01L21/027 , G01B11/00
CPC分类号： G03F9/7092 , G03F9/7076
摘要： A method for determining the centroid of a wafer target. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer, having a target set formed therein. Next, a signal is passed over the target set and over a material separating target shapes in the target set. Then a return signal is reflected, and received, from the surface of the target shapes and the material separating them. A location of at least one maxima point of the return signal is identified. Finally, a centroid is determined as the median of the locations of at least one maxima point.
摘要翻译：一种用于确定晶片靶的质心的方法。在一个实施例中，该方法包括步进器中的一系列步骤，从接收晶片的步骤开始，其中形成有目标组。接下来，信号通过目标组和在目标组中分离目标形状的材料上。然后，从目标形状的表面和分离它们的材料反射并接收返回信号。识别返回信号的至少一个最大点的位置。最后，将质心确定为至少一个最大点的位置的中位数。

32. 发明授权

US5780208A Method and mask design to minimize reflective notching effects 失效
标题翻译：方法和面罩设计，以尽量减少反光缝合效果
公开(公告)号：US5780208A
公开(公告)日：1998-07-14
申请号：US731697
申请日：1996-10-17
申请人： David Ziger , Pierre Leroux
发明人： David Ziger , Pierre Leroux
IPC分类号： G03F1/00 , G03F7/20 , G03C5/00
CPC分类号： G03F7/20 , G03F1/50
摘要： A method is described for reducing light scatter in lithographically producing a resist feature wherein the dosage of light beyond the immediate periphery of the desired feature is subjected to a lower dosage of light than is required to properly define the edges of the resist feature. In addition, a mask is described which is partially opaque in those areas remote from the area delineating the desired feature.
摘要翻译：描述了一种用于减少在光刻产生抗蚀剂特征中的光散射的方法，其中超过所需特征的直接周边的光的剂量比正确限定抗蚀剂特征的边缘所需要的更低的光量。此外，描述了在远离描绘期望特征的区域的区域中部分不透明的掩模。

33. 发明授权

US5762688A Particle removal wafer 失效
标题翻译：除颗粒
公开(公告)号：US5762688A
公开(公告)日：1998-06-09
申请号：US632352
申请日：1996-04-10
申请人： David H. Ziger , Pierre Leroux
发明人： David H. Ziger , Pierre Leroux
IPC分类号： H01L21/00 , H01L21/306 , B01D47/14
CPC分类号： H01L21/306 , H01L21/67028
摘要： A particle removal wafer including ridges defining recessed areas and sticky material placed in these recessed areas can be run through wafer processing equipment. The particle removal wafer can remove particles that would otherwise adhere to the backs of wafers run through this equipment. Particles adhering to the backs of wafers are a problem in the photolithographic steps. These particles cause the focus of the photolithographic system to be off and thus can cause fatal errors. By removing the particles which could adhere to the backs of wafers from the wafer fabrication equipment, the accuracy of the photolithographic process can be improved.
摘要翻译：包括限定凹陷区域的脊和放置在这些凹陷区域中的粘性材料的颗粒去除晶片可以穿过晶片处理设备。颗粒去除晶片可以去除否则粘附到穿过该设备的晶片背面的颗粒。附着在晶片背面的颗粒在光刻步骤中是一个问题。这些颗粒导致光刻系统的焦点关闭，从而可能导致致命错误。通过从晶片制造设备去除可能粘附到晶片背面的颗粒，可以提高光刻工艺的精度。

34. 发明授权

US5392113A Semiconductor wafer defect monitoring 失效
标题翻译：半导体晶圆缺陷监测
公开(公告)号：US5392113A
公开(公告)日：1995-02-21
申请号：US954200
申请日：1992-09-30
申请人： Anthony Sayka , Stacy W. Hall , Judy U. Galloway , Pierre Leroux , Bryan D. Schmidt , Daniel D. Siems , Henry B. Taylor, III , Edward R. Vokoun
发明人： Anthony Sayka , Stacy W. Hall , Judy U. Galloway , Pierre Leroux , Bryan D. Schmidt , Daniel D. Siems , Henry B. Taylor, III , Edward R. Vokoun
IPC分类号： G01N21/95 , G01N21/88
CPC分类号： G01N21/9501
摘要： Method and apparatus for detecting the presence of selected types of defects, such as chemical stains from a liquid photoresist material or a liquid dielectric material, on a non-visible chosen surface of a semiconductor water that has undergone at least one processing step. In one embodiment, a support substrate for, the wafer is provided that has a highly reflecting surface adjacent to the chosen surface. The reflecting surface and the chosen surface are moved apart, and the chosen surface is illuminated with light to form an optical image of the chosen surface. The optical image of the chosen surface is reflected in the reflecting surface, and the reflected optical image is examined for the presence of selected types of defects. In another embodiment, a portion of this reflecting surface is initially contiguous to the chosen surface. A selected defect, if any, on the chosen surface changes a surface characteristic of the reflecting surface so that the presence of this defect on the chosen surface is visually perceptible on the reflecting surface.
摘要翻译：用于检测在经过至少一个处理步骤的半导体水的不可见的选定表面上存在选定类型的缺陷（例如来自液态光致抗蚀剂材料或液体介电材料的化学污渍）的存在的方法和装置。在一个实施例中，提供了一种用于晶片的支撑基板，其具有与所选择的表面相邻的高反射表面。反射表面和所选择的表面被移动分开，并且所选择的表面被光照射以形成所选表面的光学图像。所选择的表面的光学图像被反射在反射表面中，并且检查反射的光学图像以存在所选择的缺陷类型。在另一个实施例中，该反射表面的一部分最初与所选择的表面相邻。所选择的表面上的选定的缺陷（如果有的话）改变反射表面的表面特性，使得在所选择的表面上存在该缺陷在反射表面上在视觉上是可察觉的。

35. 发明授权

US11141133B2 Catheter and associated methods 有权
公开(公告)号：US11141133B2
公开(公告)日：2021-10-12
申请号：US15113592
申请日：2015-01-22
申请人： Louis Marc Jean Lucien Labrousse , Lionel Jean Pierre Leroux
发明人： Louis Marc Jean Lucien Labrousse , Lionel Jean Pierre Leroux
IPC分类号： A61B8/00 , A61B8/12 , A61B8/08 , A61B17/04 , A61M25/01 , A61M25/04 , A61N7/00 , A61N7/02 , A61M25/09
摘要： A catheter includes a hollow body which extends longitudinally and has at least one first side window and a probe emitting a wave beam, the first side window allowing the radiation of the beam in a region next to the catheter for generating imaging, the catheter also including a longitudinal guiding device allowing a transmission of a movement to an intervention element, the intervention element moving in at least an area of the beam, the intervention angle between the first intervention element and the axis of the catheter being controlled by a remote control system.

36. 发明授权

US07868473B2 Wafer target design and method for determining centroid of wafer target 有权
标题翻译：晶圆目标设计及确定晶圆靶材重心的方法
公开(公告)号：US07868473B2
公开(公告)日：2011-01-11
申请号：US11104884
申请日：2005-04-12
申请人： Bryan Hubbard , Pierre Leroux
发明人： Bryan Hubbard , Pierre Leroux
IPC分类号： H01L23/544
CPC分类号： G03F9/7092 , G03F9/7076
摘要： A method for determining the centroid of a wafer target. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer, having a target set formed therein. Next, a signal is passed over the target set and over a material separating target shapes in the target set. Then a return signal is reflected, and received, from the surface of the target shapes and the material separating them. A location of at least one maxima point of the return signal is identified. Finally, a centroid is determined as the median of the locations of at least one maxima point.
摘要翻译：一种用于确定晶片靶的质心的方法。在一个实施例中，该方法包括步进器中的一系列步骤，从接收晶片的步骤开始，其中形成有目标组。接下来，信号通过目标组和在目标组中分离目标形状的材料上。然后，从目标形状的表面和分离它们的材料反射并接收返回信号。识别返回信号的至少一个最大点的位置。最后，将质心确定为至少一个最大点的位置的中位数。

37. 发明申请

US20060210885A1 Measuring the effect of flare on line width 有权
标题翻译：测量耀斑对线宽的影响
公开(公告)号：US20060210885A1
公开(公告)日：2006-09-21
申请号：US10566804
申请日：2004-07-31
申请人： David Ziger , Pierre Leroux
发明人： David Ziger , Pierre Leroux
IPC分类号： G03C5/00 , G03F1/00 , G01B11/00 , G06F17/50 , G06K9/00 , H01L21/66 , G01R31/26
CPC分类号： G03F7/70941 , G03F1/44 , G03F1/70 , G03F7/70591 , G03F7/70616
摘要： In photo-lithography, one may assess the effect of flare due to various exposure tools. In an example embodiment, in a photo-lithography process on a photo resist coated substrate, there is a method (600) for determining the effect of flare on line shortening. The method (600) comprises, at a first die position on the substrate and in a first exposure, printing a first mask (610) that includes a flare pattern (110) corresponding to one corner of the first mask (610), and in a second exposure, printing a second mask (620) that includes another flare pattern corresponding to an opposite corner of the second mask. At a second die position on the substrate, a composite mask pattern (630) based on features of the first mask and the second is printed. The printed patterns (640) are developed and measurements (650) are obtained therefrom. The effect of flare (660) is determined as a function of the measurements.
摘要翻译：在光刻中，可以评估由各种曝光工具引起的耀斑的影响。在一个示例性实施例中，在光刻胶涂覆的基底上的光刻工艺中，存在用于确定火花线对线缩短效果的方法（600）。方法（600）包括在基板上的第一裸片位置和第一曝光中，打印包括对应于第一掩模（610）的一个角的闪光图案（110）的第一掩模（610），并且第二曝光，打印包括对应于第二掩模的相对角的另一个耀斑图案的第二掩模（620）。在衬底上的第二管芯位置，印刷基于第一掩模和第二掩模的特征的复合掩模图案（630）。显影印刷图案（640），并由此获得测量（650）。作为测量的函数确定耀斑（660）的影响。

38. 发明授权

US06950187B2 Method for determining rotational error portion of total misalignment error in a stepper 有权
公开(公告)号：US06950187B2
公开(公告)日：2005-09-27
申请号：US10652228
申请日：2003-08-29
申请人： Pierre Leroux
发明人： Pierre Leroux
IPC分类号： G03F1/00 , G03F7/20 , G03F9/00 , H01L21/027 , G01B11/00
CPC分类号： G03F7/70591 , G03F7/70633
摘要： A method for determining rotational error portion of total misalignment error in a stepper. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer, having a first pattern and an error-free fine alignment target, in the stepper. In another step, the wafer is aligned in the stepper using the error-free fine alignment target. Then a second pattern is created on the wafer overlaying said first pattern. In another step, the rotational error portion of the total misalignment error is determined by measuring the circumferential misalignment between the first pattern and the second pattern.

39. 发明授权

US06639676B1 Method for determining rotational error portion of total misalignment error in a stepper 有权
标题翻译：用于确定步进器中总失准误差的旋转误差部分的方法
公开(公告)号：US06639676B1
公开(公告)日：2003-10-28
申请号：US09422909
申请日：1999-10-21
申请人： Pierre Leroux
发明人： Pierre Leroux
IPC分类号： G01B1100
CPC分类号： G03F7/70591 , G03F7/70633
摘要： A method for determining rotational error portion of total misalignment error in a stepper. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer, having a first pattern and an error-free fine alignment target, in the stepper. In another step, the wafer is aligned in the stepper using the error-free fine alignment target. Then a second pattern is created on the wafer overlaying said first pattern. In another step, the rotational error portion of the total misalignment error is determined by measuring the circumferential misalignment between the first pattern and the second pattern.
摘要翻译：用于确定步进机中的总失准误差的旋转误差部分的方法。在一个实施例中，该方法包括步进器中的一系列步骤，从在步进器中接收具有第一图案和无差错精细对准目标的晶片的步骤开始。在另一步骤中，使用无差错的精细对准靶将晶片对准在步进机中。然后在覆盖所述第一图案的晶片上产生第二图案。在另一步骤中，通过测量第一图案和第二图案之间的周向未对准来确定总失准误差的旋转误差部分。

40. 发明授权

US06541283B1 Method for determining magnification error portion of total misalignment error in a stepper 失效
标题翻译：用于确定步进机中总失准误差的倍率误差部分的方法
公开(公告)号：US06541283B1
公开(公告)日：2003-04-01
申请号：US09422914
申请日：1999-10-21
申请人： Pierre Leroux
发明人： Pierre Leroux
IPC分类号： H01L2166
CPC分类号： G03F7/70633 , G03F7/70975
摘要： A method for determining magnification error portion of total misalignment error in a stepper. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer, having a first pattern and an error-free fine alignment target, in the stepper. In another step, the wafer is aligned in the stepper using the error-free fine alignment target. Then a second pattern is created on the wafer overlaying said first pattern. In another step, the magnification error portion of the total misalignment error is determined by measuring the radial misalignment between the first pattern and the second pattern.
摘要翻译：用于确定步进机中的总失准误差的放大误差部分的方法。在一个实施例中，该方法包括步进器中的一系列步骤，从在步进器中接收具有第一图案和无差错精细对准目标的晶片的步骤开始。在另一步骤中，使用无差错的精细对准靶将晶片对准在步进机中。然后在覆盖所述第一图案的晶片上产生第二图案。在另一步骤中，通过测量第一图案和第二图案之间的径向未对准来确定总失准误差的放大误差部分。

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