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1. 发明授权

US07556893B2 Self-compensating mark design for stepper alignment 有权
标题翻译：自动补偿标记设计，用于步进对准
公开(公告)号：US07556893B2
公开(公告)日：2009-07-07
申请号：US11412596
申请日：2006-04-26
申请人： Pierre Leroux
发明人： Pierre Leroux
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F9/7084
摘要： A system and method for fabricating integrated circuits using four fine alignment targets per stepper shot. The four alignment targets are disposed within the scribe line on each side of a four-sided stepper shot. The targets on opposites sides of the region are located in mirror-image positions. For example, in a square or rectangular region, the targets could be at the mid-point of each side, or at each corner. Because the scribe lines for adjoining stepper shots overlap, a target in one shot will overlay a target from a preceding shot. In a positive resist process, for example, the target resulting from the overlay will be reduced in size by an amount corresponding to the amount of rotational error, if any. However, the target will still indicate the center of the stepper shot, thereby compensating for the rotational error with no further measurements.
摘要翻译：一种用于每个步进镜头使用四个精细对准目标制造集成电路的系统和方法。四个对准目标设置在四面步进射击的每一侧的划线内。该地区对面的目标位于镜像位置。例如，在正方形或矩形区域中，目标可以位于每一侧的中点处或在每个角落处。由于相邻步进镜头的划痕线重叠，一次拍摄中的目标将覆盖从前一个镜头的目标。在正抗蚀剂工艺中，例如，由覆盖层产生的目标的尺寸将减小与旋转误差量相对应的量（如果有的话）。然而，目标仍将指示步进枪的中心，从而补偿旋转误差，无需进一步的测量。

2. 发明申请

US20050250026A1 Overlay box structure for measuring process induced line shortening effect 有权
标题翻译：覆盖盒结构，用于测量过程引起的线条缩短效果
公开(公告)号：US20050250026A1
公开(公告)日：2005-11-10
申请号：US10841147
申请日：2004-05-07
申请人： Yuji Yamaguchi , Pierre Leroux
发明人： Yuji Yamaguchi , Pierre Leroux
IPC分类号： G03C5/00 , G03F7/20 , G03F9/00 , G06K9/00
CPC分类号： G03F7/70441 , G03F7/70633 , G03F7/70683
摘要： The present invention enables the user to measure process line shortening (PLS) on an overlay tool. In an example embodiment (900), to obtain the PLS, the user applies a method to determine the misalignment (MA) of a composite image on a substrate (940a), from the composite image the user may determine the total line (940b) shortening (TLS) and the equipment line (940c) shortening (ELS). The process line shortening (PLS) is determined (940d) as a function of TLS and ELS.
摘要翻译：本发明使得用户能够在覆盖工具上测量过程线缩短（PLS）。在示例性实施例（900）中，为了获得PLS，用户从用户可以确定总线的合成图像中应用确定合成图像在基板（940a）上的未对准（MA）的方法（940 b）缩短（TLS）和设备线（940c）缩短（ELS）。确定生产线缩短（PLS）（940 d）作为TLS和ELS的函数。

3. 发明申请

US20050190349A1 Method for determining rotational error portion of total misalignment error in a stepper 有权
标题翻译：用于确定步进器中总失准误差的旋转误差部分的方法
公开(公告)号：US20050190349A1
公开(公告)日：2005-09-01
申请号：US11118132
申请日：2005-04-29
申请人： Pierre Leroux
发明人： Pierre Leroux
IPC分类号： G03B27/68 , G03F7/20 , G03F9/00
CPC分类号： G03F7/70633 , G03F9/7003
摘要： A method for determining rotational error portion of total misalignment error in a stepper. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer, having a first pattern and an error-free fine alignment target, in the stepper. In another step, the wafer is aligned in the stepper using the error-free fine alignment target. Then a second pattern is created on the wafer overlaying said first pattern. In another step, the rotational error portion of the total misalignment error is determined by measuring the circumferential misalignment between the first pattern and the second pattern.
摘要翻译：用于确定步进机中的总失准误差的旋转误差部分的方法。在一个实施例中，该方法包括步进器中的一系列步骤，从在步进器中接收具有第一图案和无差错精细对准目标的晶片的步骤开始。在另一步骤中，使用无差错的精细对准靶将晶片对准在步进机中。然后在覆盖所述第一图案的晶片上产生第二图案。在另一步骤中，通过测量第一图案和第二图案之间的周向未对准来确定总失准误差的旋转误差部分。

4. 发明授权

US06671048B1 Method for determining wafer misalignment using a pattern on a fine alignment target 失效
标题翻译：使用精细对准靶上的图案确定晶片未对准的方法
公开(公告)号：US06671048B1
公开(公告)日：2003-12-30
申请号：US09425834
申请日：1999-10-21
申请人： Pierre Leroux
发明人： Pierre Leroux
IPC分类号： G01B1100
CPC分类号： G03F9/708 , G03F7/70633 , G03F9/7076 , G03F9/7084
摘要： A method for determining wafer misalignment by using a pattern on a fine alignment target. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer having an alignment target. In another step, the wafer is aligned using the alignment target. Next, a pattern is created around the alignment target using an overlay. Then, the misalignment is determined between the alignment target and the pattern created around the alignment target.
摘要翻译：一种通过在精细对准靶上使用图案来确定晶片未对准的方法。在一个实施例中，该方法包括步进器中的一系列步骤，从接收具有对准靶的晶片的步骤开始。在另一步骤中，使用对准靶对准晶片。接下来，使用覆盖层在对准目标周围创建图案。然后，在对准目标和对准目标周围产生的图案之间确定未对准。

5. 发明授权

US06258611B1 Method for determining translation portion of misalignment error in a stepper 失效
标题翻译：用于确定步进器中未对准误差的翻译部分的方法
公开(公告)号：US06258611B1
公开(公告)日：2001-07-10
申请号：US09422912
申请日：1999-10-21
申请人： Pierre Leroux
发明人： Pierre Leroux
IPC分类号： H01L2166
CPC分类号： G03F7/70591 , G03F7/70633
摘要： A method for determining translation portion of misalignment error in a stepper. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer in the stepper. In another step a first pattern, including an error-free fine alignment target, is created on the wafer. Next, the wafer is realigned in the stepper using the error-free fine alignment target. Then a second pattern is created on the wafer overlaying said first pattern. In another step, the translational error between the first pattern and the second pattern is measured.
摘要翻译：一种用于确定步进器中未对准误差的平移部分的方法。在一个实施例中，该方法包括步进器中的一系列步骤，从在步进器中接收晶片的步骤开始。在另一步骤中，在晶片上产生包括无差错精细对准目标的第一图案。接下来，使用无差错的精细对准目标在步进器中重新对准晶片。然后在覆盖所述第一图案的晶片上产生第二图案。在另一步骤中，测量第一图案和第二图案之间的平移误差。

6. 发明授权

US5962173A Method for measuring the effectiveness of optical proximity corrections 失效
标题翻译：用于测量光学邻近校正的有效性的方法
公开(公告)号：US5962173A
公开(公告)日：1999-10-05
申请号：US951396
申请日：1997-10-16
申请人： Pierre Leroux , Sethi Satyendra , David Ziger
发明人： Pierre Leroux , Sethi Satyendra , David Ziger
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F7/70616 , G03F7/70441 , G03F7/70633 , G03F7/70641
摘要： The effectiveness of various types of optical proximity correction schemes for avoiding line shortening are easily evaluated by imprinting a test pattern on a semiconductor wafer. The pattern includes an easily measurable standard measurement element not susceptible to line shortening and a test element having a series of parallel lines with narrow widths comparable to the widths of the circuit features that are susceptible to line shortening. The test element also includes the same optical proximity correction scheme whose effectiveness is to be measured. The entire test pattern is photolithographed onto the wafer and the lengths of measurement element and the test element are measured and compared to determine the effectiveness of the correction. Several test patterns, each with a different form of optical proximity correction, can be lithographed onto a single wafer for a comparative review of the different correction schemes both in focus and out of focus both positively and negatively.
摘要翻译：通过在半导体晶片上印刷测试图案可容易地评估用于避免线缩短的各种类型的光学邻近校正方案的有效性。该图案包括不容易发生线缩短的容易测量的标准测量元件，以及测试元件，该测试元件具有窄线宽度的一系列平行线，可以容易受到线缩短的电路特征的宽度的影响。测试元件还包括其有效性被测量的相同的光学邻近校正方案。将整个测试图案光刻到晶片上，并测量和比较测量元件和测试元件的长度以确定校正的有效性。可以将具有不同形式的光学邻近校正的几种测试图案平版印刷到单个晶片上，用于对焦和不在焦点的不同校正方案的正面和负面的比较审查。

7. 发明授权

US5876883A Method forming focus/exposure matrix on a wafer using overlapped exposures 失效
标题翻译：使用重叠曝光在晶片上形成焦点/曝光矩阵的方法
公开(公告)号：US5876883A
公开(公告)日：1999-03-02
申请号：US579489
申请日：1995-12-27
申请人： Pierre Leroux
发明人： Pierre Leroux
IPC分类号： G03F7/20 , G03C5/00
CPC分类号： G03F7/70633 , G03F7/70641
摘要： A method of forming a focus/exposure matrix on a wafer is provided, wherein the wafer is used to calibrate the photostepper's focus and exposure time settings. The focus/exposure matrix comprising a series of patterns disposed on the wafer. The patterns being arranged in rows and columns. The patterns in a row being characterized by having been formed with substantially the same exposure time and an effective focus that increments between successive row patterns by an amount substantially corresponding to half the focus resolution of the photostepper. The patterns in a column being characterized by having been formed with substantially the same effective focus and an exposure time that increments between successive column patterns by a finite amount.
摘要翻译：提供了一种在晶片上形成聚焦/曝光矩阵的方法，其中晶片用于校准光刻胶的聚焦和曝光时间设置。焦点/曝光矩阵包括设置在晶片上的一系列图案。图案以行和列排列。一行中的图案的特征在于具有基本上相同的曝光时间和有效焦点，其在相继的行图案之间增加基本上对应于光阶段的一半焦点分辨率的量。特征在于，柱中的图案被形成为具有基本相同的有效焦点和在连续列图案之间增加有限量的曝光时间。

8. 发明授权

US11931204B2 Catheter and associated methods 有权
公开(公告)号：US11931204B2
公开(公告)日：2024-03-19
申请号：US17471818
申请日：2021-09-10
申请人： Louis Marc Jean Lucien Labrousse , Lionel Jean Pierre Leroux
发明人： Louis Marc Jean Lucien Labrousse , Lionel Jean Pierre Leroux
IPC分类号： A61M25/01 , A61B8/00 , A61B8/08 , A61B8/12 , A61B17/04 , A61M25/04 , A61M25/09 , A61N7/00 , A61N7/02
CPC分类号： A61B8/445 , A61B8/0883 , A61B8/12 , A61B17/0491 , A61M25/0102 , A61M25/04 , A61M2025/018 , A61M25/09 , A61M2025/09116 , A61N7/00 , A61N7/02
摘要： A catheter includes a hollow body which extends longitudinally and has at least one first side window and a probe emitting a wave beam, the first side window allowing the radiation of the beam in a region next to the catheter for generating imaging, the catheter also including a longitudinal guiding device allowing a transmission of a movement to an intervention element, the intervention element moving in at least an area of the beam, the intervention angle between the first intervention element and the axis of the catheter being controlled by a remote control system.

9. 发明申请

US20210401403A1 CATHETER AND ASSOCIATED METHODS 有权
公开(公告)号：US20210401403A1
公开(公告)日：2021-12-30
申请号：US17471818
申请日：2021-09-10
申请人： Louis Marc Jean Lucien LABROUSSE , Lionel Jean Pierre LEROUX
发明人： Louis Marc Jean Lucien LABROUSSE , Lionel Jean Pierre LEROUX
IPC分类号： A61B8/00 , A61B8/12 , A61B8/08 , A61B17/04 , A61M25/01 , A61M25/04
摘要： A catheter includes a hollow body which extends longitudinally and has at least one first side window and a probe emitting a wave beam, the first side window allowing the radiation of the beam in a region next to the catheter for generating imaging, the catheter also including a longitudinal guiding device allowing a transmission of a movement to an intervention element, the intervention element moving in at least an area of the beam, the intervention angle between the first intervention element and the axis of the catheter being controlled by a remote control system.

10. 发明申请

US20090220870A1 MEASURING THE EFFECT OF FLARE ON LINE WIDTH 失效
标题翻译：测量瓦斯对线宽的影响
公开(公告)号：US20090220870A1
公开(公告)日：2009-09-03
申请号：US12464731
申请日：2009-05-12
申请人： DAVID ZIGER , PIERRE LEROUX
发明人： DAVID ZIGER , PIERRE LEROUX
IPC分类号： G03F1/00 , G03F7/20 , G03B27/42
CPC分类号： G03F7/70941 , G03F1/44 , G03F1/70 , G03F7/70591 , G03F7/70616
摘要： In photo-lithography, one may assess the effect of flare due to various exposure tools. In an example embodiment, in a photo-lithography process on a photo resist coated substrate, there is a method for determining the effect of flare on line shortening. The method comprises, at a first die position on the substrate and in a first exposure, printing a first mask that includes a flare pattern corresponding to one corner of the first mask, and in a second exposure, printing a second mask that includes another flare pattern corresponding to an opposite corner of the second mask. At a second die position on the substrate, a composite mask pattern based on features of the first mask and the second is printed. The printed patterns are developed and measurements are obtained therefrom. The effect of flare is determined as a function of the measurements.
摘要翻译：在光刻中，可以评估由各种曝光工具引起的耀斑的影响。在一个示例性实施例中，在光刻胶涂覆的基底上的光刻工艺中，存在用于确定火花线对线缩短效果的方法。该方法包括在基板上的第一裸片位置和第一曝光中，打印包括对应于第一掩模的一个角的闪光图案的第一掩模，并且在第二曝光中，打印包括另外的耀斑的第二掩模图案对应于第二掩模的相对角。在基板上的第二管芯位置，印刷基于第一掩模和第二掩模的特征的复合掩模图案。显影印刷图案并从中获得测量结果。火炬的作用是测量的函数。

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