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31. 发明授权

US07744768B2 Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof 有权
标题翻译：抗蚀剂图案增厚材料，抗蚀剂图案及其形成方法以及半导体器件及其制造方法
公开(公告)号：US07744768B2
公开(公告)日：2010-06-29
申请号：US11643896
申请日：2006-12-22
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： C03C15/00 , C03C25/68 , C03F1/00
CPC分类号： H01L27/11526 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/312 , G11B5/3163 , H01L21/0271 , H01L21/0273 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11543
摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.
摘要翻译：抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂图案加厚。形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。半导体器件具有由抗蚀剂图案形成的图案。用于制造半导体器件的工艺在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以增厚，并通过蚀刻将图案图案化为掩模。

32. 发明申请

US20100047711A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE 有权
标题翻译：电阻组合物，形成电阻图案的方法和用于制造电子器件的方法
公开(公告)号：US20100047711A1
公开(公告)日：2010-02-25
申请号：US12557211
申请日：2009-09-10
申请人： Miwa Kozawa , Koji Nozaki
发明人： Miwa Kozawa , Koji Nozaki
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： H01L21/31144 , G03F7/0397 , G03F7/0757 , G03F7/2041 , H01L21/76802
摘要： A resist composition, which contains: a silicon compound having at least an alkyl-soluble group which may be substituted with a substituent; and a resin having an alkali-soluble group which may be substituted with an acid labile group, wherein the resist composition is designed to be subjected to immersion lithography.
摘要翻译：抗蚀剂组合物，其含有：具有至少可被取代基取代的烷基可溶性基团的硅化合物; 以及具有可被酸不稳定基团取代的碱溶性基团的树脂，其中抗蚀剂组合物被设计为进行浸渍光刻。

33. 发明授权

US07419894B2 Gate electrode and manufacturing method thereof, and semiconductor device and manufacturing method thereof 有权
标题翻译：栅电极及其制造方法以及半导体装置及其制造方法
公开(公告)号：US07419894B2
公开(公告)日：2008-09-02
申请号：US11062588
申请日：2005-02-23
申请人： Kozo Makiyama , Koji Nozaki
发明人： Kozo Makiyama , Koji Nozaki
IPC分类号： H01L21/28
CPC分类号： H01L21/28 , H01L21/0277 , H01L29/42316 , Y10S438/95
摘要： The present invention provides a method of manufacturing a gate electrode in which a fine gate electrode can effectively be manufactured by thickening a resist opening for gate electrodes formed by ordinary electron beam lithography so as to reduce opening dimensions. The method of manufacturing a gate electrode of the present invention includes a step of forming a laminated resist including at least an electron beam resist layer as a lowermost layer on a surface where a gate electrode is to be formed; a step of forming an opening in layer(s) other than the lowermost layer; a step of forming a gate electrode opening on the lowermost layer exposed from the opening; a step of reducing the gate electrode opening selectively; and a step of forming a gate electrode in the gate electrode opening.
摘要翻译：本发明提供一种制造栅电极的方法，其中可以通过增厚通过普通电子束光刻形成的栅电极的抗蚀剂开口来有效地制造精细栅电极，从而减小开口尺寸。本发明的制造栅极的方法包括在要形成栅电极的表面上形成至少包含电子束阻挡层作为最下层的层压抗蚀剂的步骤; 在除了最下层之外的层中形成开口的步骤; 在从开口露出的最下层形成栅电极开口的步骤; 选择性地减小栅极电极开口的步骤; 以及在栅电极开口中形成栅电极的步骤。

34. 发明授权

US07416837B2 Resist pattern-improving material and a method for preparing a resist pattern by using the same 有权
标题翻译：抗蚀剂图案改善材料及其制备方法
公开(公告)号：US07416837B2
公开(公告)日：2008-08-26
申请号：US10290493
申请日：2002-11-08
申请人： Koji Nozaki , Miwa Kozawa
发明人： Koji Nozaki , Miwa Kozawa
IPC分类号： G03C5/00
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0275 , Y02E50/343 , Y02W30/47
摘要： The present invention provided an improvement to reduce an edge roughness during forming a small and fine pattern. Such and objective is to accomplish that after patterning a resist film, a coating film is formed on the resist film, so as to intermix the resist film material with the coating film material at the interface therebetween to reduce the edge roughness. There is provided a resist pattern-improving material, comprising: (a) a water-soluble or alkali-soluble composition, comprising: (i) a resin, and (ii) a crosslinking agent. Alternatively, The resist pattern-improving material, comprising (a) a water-soluble or alkali-soluble composition, comprising: (i) a resin, and (ii) a nonionic surfactant. According to the present invention, a pattern is prepared in the step, comprising: (a) forming a resist pattern; and (b) coating the resist pattern-improving material on the surface of the resist pattern. According to the present invention, the resist pattern-improving material is mixed with the resist pattern at the interface therebetween. The resist pattern may be formed by irradiating a ArF excimar laser light or a laser light having a wavelength shorter than that of the ArF excimar laser light. The pattern of the resist pattern-improving material includes a base resin which does not substantially transmit the ArF excimar laser light.
摘要翻译：本发明提供了在形成小而精细图案时减少边缘粗糙度的改进。这样做和目的是为了在图案化抗蚀剂膜之后，在抗蚀剂膜上形成涂膜，以便将抗蚀剂膜材料与涂膜材料在其间的界面处混合，以降低边缘粗糙度。提供抗蚀剂图案改进材料，其包含：（a）水溶性或碱溶性组合物，其包含：（i）树脂和（ii）交联剂。或者，抗蚀剂图案改进材料包括（a）水溶性或碱溶性组合物，其包含：（i）树脂和（ii）非离子表面活性剂。根据本发明，在该步骤中制备图案，包括：（a）形成抗蚀剂图案; 和（b）在抗蚀剂图案的表面上涂覆抗蚀剂图案改善材料。根据本发明，抗蚀剂图案改善材料在其间的界面处与抗蚀剂图案混合。可以通过照射具有短于ArF激发激光的波长的ArF截止激光或激光来形成抗蚀剂图案。抗蚀剂图案改善材料的图案包括不基本上透射ArF分离激光的基础树脂。

35. 发明申请

US20080044769A1 Method for forming resist pattern, semiconductor device and production method thereof 有权
标题翻译：形成抗蚀剂图案的方法，半导体器件及其制造方法
公开(公告)号：US20080044769A1
公开(公告)日：2008-02-21
申请号：US11645638
申请日：2006-12-27
申请人： Miwa Kozawa , Koji Nozaki
发明人： Miwa Kozawa , Koji Nozaki
IPC分类号： G03C5/00
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/31144
摘要： It is an object of the present invention to provide a method for forming a resist pattern, in which ArF excimer laser light can be utilized as the exposure light for the patterning, the resist patterns can be thickened stably to an intended thickness independently of the sizes of the resist patterns, and the fineness of the fine space patterns can surpass the limit in terms of exposure or resolution of exposure devices.The method for forming a resist pattern of the present invention comprises at least forming a resist pattern, coating a resist pattern thickening material to cover the surface of the resist pattern, baking the resist pattern thickening material, and developing and separating the resist pattern thickening material, wherein at least one of the coating, the baking and the developing is carried out plural times.
摘要翻译：本发明的目的是提供一种用于形成抗蚀剂图案的方法，其中可以使用ArF准分子激光作为用于图案化的曝光光，抗蚀剂图案可以独立于尺寸稳定地增厚到预定厚度的抗蚀剂图案，并且精细空间图案的细度可以在曝光或曝光装置的曝光或分辨率方面超过限制。本发明的形成抗蚀剂图案的方法至少包括形成抗蚀剂图案，涂覆抗蚀剂图案增厚材料以覆盖抗蚀剂图案的表面，烘烤抗蚀剂图案增厚材料，以及显影和分离抗蚀剂图案增厚材料其中，涂层，烘烤和显影中的至少一个进行多次。

36. 发明申请

US20070106021A1 Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof 有权
公开(公告)号：US20070106021A1
公开(公告)日：2007-05-10
申请号：US11643896
申请日：2006-12-22
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： C08F8/00
CPC分类号： H01L27/11526 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/312 , G11B5/3163 , H01L21/0271 , H01L21/0273 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11543
摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

37. 发明授权

US07122288B2 Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device 有权
公开(公告)号：US07122288B2
公开(公告)日：2006-10-17
申请号：US10097818
申请日：2002-03-15
申请人： Miwa Kozawa , Koji Nozaki , Keiji Watanabe , Ei Yano
发明人： Miwa Kozawa , Koji Nozaki , Keiji Watanabe , Ei Yano
IPC分类号： G03F7/038 , G03F7/004
CPC分类号： B82Y30/00 , G03F7/0046 , G03F7/038 , G03F7/0382 , G03F7/0757 , G03F7/094
摘要： A negative resist composition containing an alkaline-soluble resin as a base material, in which an oxetane structure represented by the following formula (1): is contained in a structure of the alkaline-soluble resin or in a structure of a compound used in combination with the alkaline-soluble resin, is disclosed.

38. 发明申请

US20060188807A1 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same 有权
公开(公告)号：US20060188807A1
公开(公告)日：2006-08-24
申请号：US11335716
申请日：2006-01-20
申请人： Koji Nozaki , Miwa Kozawa , Takahisa Narriki
发明人： Koji Nozaki , Miwa Kozawa , Takahisa Narriki
IPC分类号： G03C1/76
CPC分类号： G11B5/3163 , G03F7/2024 , G03F7/40 , H01L21/0274 , H01L21/0275 , H01L27/115 , H01L27/11526 , H01L27/11543 , Y10S430/106 , Y10S430/114
摘要： The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

39. 发明申请

US20060188805A1 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same 审中-公开
公开(公告)号：US20060188805A1
公开(公告)日：2006-08-24
申请号：US11138819
申请日：2005-05-27
申请人： Koji Nozaki , Takahisa Namiki , Miwa Kozawa
发明人： Koji Nozaki , Takahisa Namiki , Miwa Kozawa
IPC分类号： G03C1/76
CPC分类号： G03F7/40
摘要： The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

40. 发明申请

US20060073420A1 Resist pattern thickening material, resist pattern and process for forming the same, and semiconductor device and process for manufacturing the same 有权
公开(公告)号：US20060073420A1
公开(公告)日：2006-04-06
申请号：US11283720
申请日：2005-11-22
申请人： Koji Nozaki , Miwa Kozawa
发明人： Koji Nozaki , Miwa Kozawa
IPC分类号： G03C1/76
CPC分类号： H01L27/105 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/313 , G11B5/3163 , H01L27/10844 , H01L27/10894 , H01L27/11526 , H01L27/11541 , H01L27/11543 , H01L28/10
摘要： The present invention provides a resist pattern thickening material and the like which can thicken a resist pattern and form a fine space pattern. The resist pattern thickening material contains: a resin; a crosslinking agent; and at least one type selected from cationic surfactants, amphoteric surfactants, and non-ionic surfactants selected from alkoxylate surfactants, fatty acid ester surfactants, amide surfactants, alcohol surfactants, and ethylene diamine surfactants. In a process for forming a resist pattern of the present invention, after a resist pattern is formed, the thickening material is applied onto a surface of the pattern. A process for manufacturing a semiconductor device of the present invention includes: after forming a resist pattern on an underlying layer, applying the thickening material on a surface of the pattern so as to thicken the pattern; and a step of patterning the underlying layer by etching by using the pattern.

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