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31. 发明申请

US20120306081A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20120306081A1
公开(公告)日：2012-12-06
申请号：US13427268
申请日：2012-03-22
申请人： Takeshi ISHIZAKI , Atsuko Sakata , Junichi Wada , Masahiko Hasunuma
发明人： Takeshi ISHIZAKI , Atsuko Sakata , Junichi Wada , Masahiko Hasunuma
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L27/101 , H01L21/764 , H01L21/7682 , H01L21/76832 , H01L21/76834 , H01L21/76852 , H01L21/76867 , H01L21/76877 , H01L21/76886 , H01L21/76888 , H01L23/53261 , H01L23/53266 , H01L27/0688 , H01L27/11524 , H01L27/1157 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2481 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device includes an interconnect provided on a first interlayer insulating film covering a semiconductor substrate in which an element is formed, a cap layer provided on the upper surface of the interconnect, and a barrier film provided between the interconnect and a second interlayer insulating film covering the interconnect. The interconnect includes a high-melting-point conductive layer, and the width of the interconnect is smaller than the width of the cap layer. The barrier film includes a compound of a contained element in the high-melting-point conductive layer.
摘要翻译：根据一个实施例，半导体器件包括设置在覆盖其中形成元件的半导体衬底的第一层间绝缘膜上的互连，设置在互连的上表面上的覆盖层，以及设置在互连和覆盖互连的第二层间绝缘膜。互连包括高熔点导电层，并且互连的宽度小于盖层的宽度。阻挡膜包括在高熔点导电层中含有元素的化合物。

32. 发明申请

US20120292587A1 NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储器件
公开(公告)号：US20120292587A1
公开(公告)日：2012-11-22
申请号：US13424880
申请日：2012-03-20
申请人： Kouji MATSUO , Noritake OHMACHI , Tomotaka ARIGA , Junichi WADA , Yoshio OZAWA
发明人： Kouji MATSUO , Noritake OHMACHI , Tomotaka ARIGA , Junichi WADA , Yoshio OZAWA
IPC分类号： H01L47/00
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1266 , H01L45/146
摘要： According to one embodiment, a nonvolatile memory device includes a memory cell. The memory cell includes a stacked film structure. The stacked film structure is capable of maintaining a first state or a second state. The first state includes a lower electrode film, a first memory element film provided on the lower electrode film and containing a first oxide and an upper electrode film provided on the first memory element film. The second state includes the lower electrode film, the first memory element film provided on the lower electrode film, a second memory element film provided on the first memory element film and containing a second oxide and the upper electrode film provided on the second memory element film.
摘要翻译：根据一个实施例，非易失性存储器件包括存储单元。存储单元包括层叠膜结构。层叠膜结构能够保持第一状态或第二状态。第一状态包括下电极膜，设置在下电极膜上并包含设置在第一存储元件膜上的第一氧化物和上电极膜的第一存储元件膜。第二状态包括下电极膜，设置在下电极膜上的第一存储元件膜，设置在第一存储元件膜上并包含第二氧化物的第二存储元件膜，以及设置在第二存储元件膜上的上电极膜。

33. 发明授权

US08148274B2 Semiconductor device having oxidized metal film and manufacture method of the same 有权
标题翻译：具有氧化金属膜的半导体器件及其制造方法
公开(公告)号：US08148274B2
公开(公告)日：2012-04-03
申请号：US12010372
申请日：2008-01-24
申请人： Junichi Wada , Atsuko Sakata , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
发明人： Junichi Wada , Atsuko Sakata , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31616 , C23C16/045 , C23C16/45536 , C23C16/482 , H01L21/02178 , H01L21/02186 , H01L21/02244 , H01L21/02255 , H01L21/28556 , H01L21/28562 , H01L21/67109 , H01L21/67748 , H01L21/6831 , H01L21/68742 , H01L21/68764 , H01L21/68771 , H01L21/76807 , H01L21/76814 , H01L21/76828 , H01L21/76831 , H01L21/76835 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.
摘要翻译：一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

34. 发明申请

US20100115479A1 Method for generating pattern, method for manufacturing semiconductor device, semiconductor device, and computer program 有权
标题翻译：用于生成图案的方法，制造半导体器件的方法，半导体器件和计算机程序
公开(公告)号：US20100115479A1
公开(公告)日：2010-05-06
申请号：US12654865
申请日：2010-01-07
申请人： Masaaki Hatano , Motoya Okazaki , Junichi Wada , Takeshi Nishioka , Hisashi Kaneko , Takeshi Fujimaki , Kazuyuki Higashi , Kanji Yoshida , Noriaki Matsunaga
发明人： Masaaki Hatano , Motoya Okazaki , Junichi Wada , Takeshi Nishioka , Hisashi Kaneko , Takeshi Fujimaki , Kazuyuki Higashi , Kanji Yoshida , Noriaki Matsunaga
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： A method for generating a pattern includes reading out an interconnect layout and a hole layout, the interconnect layout prescribing interconnect patterns, the hole layout prescribing hole patterns configured to connect to the interconnect patterns; extracting one of the hole patterns to be connected within the same interconnect layer level to one of the interconnect patterns in a pattern processing area; extracting a first processing area including the extracted hole pattern; calculating a first pattern density of the interconnect patterns included in the first processing area; and generating first additional patterns in the first processing area based on the first pattern density.
摘要翻译：一种用于产生图案的方法包括：读出互连布局和孔布局;布置规定互连图案的布局布局;布置配置为连接到互连图案的孔图案的孔布局; 在图案处理区域中将在相同互连层级中连接的孔图案中的一个提取到所述互连图案之一; 提取包括所提取的孔图案的第一处理区域; 计算包括在第一处理区域中的互连图案的第一图案密度; 以及基于所述第一图案密度在所述第一处理区域中生成第一附加图案。

35. 发明申请

US20090108972A1 IGNITION COIL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：点火线圈及其制造方法
公开(公告)号：US20090108972A1
公开(公告)日：2009-04-30
申请号：US12257418
申请日：2008-10-24
申请人： Junichi Wada
发明人： Junichi Wada
IPC分类号： H01F27/02 , H01F7/06
CPC分类号： H01F38/12 , H01F27/022 , H01F41/005 , Y10T29/4902
摘要： An ignition coil includes a coil body, a primary resin molded body, and a secondary resin molded body. The coil body has a primary coil and a secondary coil. The primary resin molded body has the coil body therein in a fixed relation, and the primary resin molded body has a plurality of exposed side portions that hold the coil body therebetween. The secondary resin molded body is molded to have the coil body and the primary resin molded body embedded therein. The secondary resin molded body is configured to allow the plurality of exposed side portions of the primary resin molded body to be exposed to an exterior of the secondary resin molded body.
摘要翻译：点火线圈包括线圈体，主树脂成型体和二次树脂成形体。线圈体具有初级线圈和次级线圈。主树脂成形体的固定关系具有线圈体，主树脂成型体具有将线圈体保持在其间的多个露出侧部。二次树脂成型体被模制成具有线圈体和主树脂成形体嵌入其中。第二树脂成型体被构造成允许主树脂成型体的多个露出侧部露出到二次树脂成型体的外部。

36. 发明申请

US20060214305A1 Semiconductor device having oxidized metal film and manufacture method of the same 有权
标题翻译：具有氧化金属膜的半导体器件及其制造方法
公开(公告)号：US20060214305A1
公开(公告)日：2006-09-28
申请号：US11335584
申请日：2006-01-20
申请人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
发明人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/31616 , C23C16/045 , C23C16/45536 , C23C16/482 , H01L21/02178 , H01L21/02186 , H01L21/02244 , H01L21/02255 , H01L21/28556 , H01L21/28562 , H01L21/67109 , H01L21/67748 , H01L21/6831 , H01L21/68742 , H01L21/68764 , H01L21/68771 , H01L21/76807 , H01L21/76814 , H01L21/76828 , H01L21/76831 , H01L21/76835 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.
摘要翻译：一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

37. 发明授权

US06436813B1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06436813B1
公开(公告)日：2002-08-20
申请号：US09532046
申请日：2000-03-21
申请人： Yasushi Oikawa , Junichi Wada , Tomio Katata
发明人： Yasushi Oikawa , Junichi Wada , Tomio Katata
IPC分类号： H01L214763
CPC分类号： H01L21/76882 , H01L23/5226 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a semiconductor device including a semiconductor substrate, an interlayer insulating film formed on one main surface of the semiconductor substrate and having a concave portion, a liner film formed on the inner surface of the concave portion, a wiring layer formed inside the concave portion with the liner film interposed therebetween, and an agglomeration suppressing material contained in the wiring layer for suppressing agglomeration of the material constituting the wiring layer. The agglomeration suppressing material is selected from the group consisting of O, N, Nb, Ta, Ti, W and C.
摘要翻译：公开了一种半导体器件，包括半导体衬底，形成在半导体衬底的一个主表面上并具有凹部的层间绝缘膜，形成在凹部的内表面上的衬垫膜，形成在凹部内的布线层并且包含在布线层中的用于抑制构成布线层的材料的聚集的附聚抑制材料。附聚抑制材料选自O，N，Nb，Ta，Ti，W和C.

38. 发明授权

US10100426B2 Method for producing gallium nitride crystal 有权
公开(公告)号：US10100426B2
公开(公告)日：2018-10-16
申请号：US15124794
申请日：2014-11-27
申请人： Takashi Satoh , Seiji Sarayama , Masahiro Hayashi , Naoya Miyoshi , Chiharu Kimura , Junichi Wada
发明人： Takashi Satoh , Seiji Sarayama , Masahiro Hayashi , Naoya Miyoshi , Chiharu Kimura , Junichi Wada
IPC分类号： C30B9/10 , C30B29/40 , C30B9/12 , C30B35/00
摘要： A method for producing a gallium nitride crystal includes growing a gallium nitride crystal 5 by dissolving nitrogen in a mixed melt including gallium and sodium, and collecting the gallium 55 separated from an alloy 51 including the gallium and the sodium by reacting the alloy 51 and a liquid 52 that ionizes the sodium and separating sodium ions and the gallium 55 from the alloy.

39. 发明授权

US08569728B2 Nonvolatile memory with variable resistance change layers 有权
标题翻译：具有可变电阻变化层的非易失性存储器
公开(公告)号：US08569728B2
公开(公告)日：2013-10-29
申请号：US12728579
申请日：2010-03-22
申请人： Kensuke Takano , Yoshio Ozawa , Katsuyuki Sekine , Junichi Wada
发明人： Kensuke Takano , Yoshio Ozawa , Katsuyuki Sekine , Junichi Wada
IPC分类号： H01L29/02
CPC分类号： H01L45/08 , G11C11/5685 , G11C13/0007 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/71 , H01L27/2436 , H01L27/2463 , H01L27/2481 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1608 , H01L45/1666
摘要： A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer.
摘要翻译：非易失性存储器件包括：第一导电层; 第二导电层; 第一电阻变化层，设置在所述第一导电层和所述第二导电层之间，并且具有通过施加电场和通过电流中的至少一个而改变的电阻; 以及设置在所述第一电阻变化层的侧表面上并且具有高于所述第一电阻变化层中的氧浓度的氧浓度的第一横向层。

40. 发明申请

US20120152168A1 SEMICONDUCTOR DEVICE HAVING OXIDIZED METAL FILM AND MANUFACTURE METHOD OF THE SAME 审中-公开
标题翻译：具有氧化金属膜的半导体器件及其制造方法
公开(公告)号：US20120152168A1
公开(公告)日：2012-06-21
申请号：US13407802
申请日：2012-02-29
申请人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
发明人： Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
IPC分类号： C23C16/46 , C23C16/511
CPC分类号： H01L21/31616 , C23C16/045 , C23C16/45536 , C23C16/482 , H01L21/02178 , H01L21/02186 , H01L21/02244 , H01L21/02255 , H01L21/28556 , H01L21/28562 , H01L21/67109 , H01L21/67748 , H01L21/6831 , H01L21/68742 , H01L21/68764 , H01L21/68771 , H01L21/76807 , H01L21/76814 , H01L21/76828 , H01L21/76831 , H01L21/76835 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76858 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.
摘要翻译：一种制造半导体器件的方法包括将其上具有绝缘膜的衬底加热到第一衬底温度，使得氧化物质从绝缘膜发射，绝缘膜具有形成在其表面上的凹陷部分，在所述绝缘膜的第二衬底温度低于所述第一衬底温度，并且氧化至少部分所述金属膜的氧化物质残留在所述绝缘膜中。

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