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31. 发明申请

US20060178777A1 Home network system and control method thereof 审中-公开
标题翻译：家庭网络系统及其控制方法
公开(公告)号：US20060178777A1
公开(公告)日：2006-08-10
申请号：US11348496
申请日：2006-02-06
申请人： Jong-Ho Park , Jae-Seok Park , Jun-Ku Kim , Jong-Chang Lee
发明人： Jong-Ho Park , Jae-Seok Park , Jun-Ku Kim , Jong-Chang Lee
IPC分类号： B29C45/00 , G06F19/00
CPC分类号： H04L12/2803 , B25J9/0003 , H04L12/2818
摘要： A home network system and a control method thereof. A user with a mobile station at a remote location can control a home robot and monitor security conditions and home appliance conditions at a house via a wireless network. In the home network system, the mobile station is adapted to transmit a control request message for the remote control of the home robot and monitoring-request messages for the monitoring at a house via a first network, and receive control result information related to the home robot control and monitoring information via the first network for display. A server is adapted to analyze the request messages received from the mobile station via the first network, transmit a corresponding request message to the home robot via a second network, and receive the control result information and the monitoring information from the home robot via the second network to transmit to the mobile station.
摘要翻译：家庭网络系统及其控制方法。在远程位置具有移动台的用户可以通过无线网络来控制家庭机器人并监视房屋的安全状况和家电条件。在家庭网络系统中，移动台适于通过第一网络发送用于家庭机器人的远程控制的控制请求消息和用于在家庭进行监视的监视请求消息，并且接收与家庭相关的控制结果信息机器人控制和监控信息通过第一个网络进行显示。服务器适于经由第一网络分析从移动站接收到的请求消息，经由第二网络向家庭机器人发送相应的请求消息，并且经由第二网络从家庭机器人接收控制结果信息和监视信息网络传输到移动台。

32. 发明授权

US06740550B2 Methods of manufacturing semiconductor devices having chamfered silicide layers therein 失效
标题翻译：制造其中具有倒角的硅化物层的半导体器件的方法
公开(公告)号：US06740550B2
公开(公告)日：2004-05-25
申请号：US10190086
申请日：2002-07-03
申请人： Chang-won Choi , Dae-hyuk Chung , Woo-sik Kim , Shin-woo Nam , Yeo-cheol Yoon , Bum-su Kim , Jong-ho Park , Ji-hwan Choi
发明人： Chang-won Choi , Dae-hyuk Chung , Woo-sik Kim , Shin-woo Nam , Yeo-cheol Yoon , Bum-su Kim , Jong-ho Park , Ji-hwan Choi
IPC分类号： H01L218238
CPC分类号： H01L21/02071 , H01L21/28114 , H01L21/32134 , H01L21/32137 , H01L21/76897 , H01L23/5258 , H01L29/42376 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a chamfered silicide layer and a manufacturing method of the same. The semiconductor device includes: a first insulation layer overlying a semiconductor substrate; gate structures including first conductive layer patterns formed on the first insulation layer, and second conductive layer patterns which are formed on the first conductive layer patterns, wherein the lower sides of the second conductive layer patterns are substantially perpendicular to the major surface of the semiconductor substrate and the upper sides of the second conductive layer patterns are chamfered; and a second insulation layer formed with a first width W on the second conductive layer patterns, wherein the sidewalls of the second insulation layer overhang the upper edges of the second conductive layer patterns. In the semiconductor device manufacture, in forming undercut regions which define the chamfered upper edges of the metal silicide layer patterns, isotropic dry etching is carried out, wherein the isotropic dry etching can be performed simultaneously with ashing of photoresist patterns, or immediately after the ashing process in the same chamber. In either case, after the ashing of the photoresist patterns, an isotropic wet etching can be carried out immediately after performing an existing stripping process, so as to form the undercut regions.
摘要翻译：具有倒角硅化物层的半导体器件及其制造方法。半导体器件包括：覆盖半导体衬底的第一绝缘层; 包括形成在第一绝缘层上的第一导电层图案的栅结构和形成在第一导电层图案上的第二导电层图案，其中第二导电层图案的下侧基本垂直于半导体衬底的主表面并且第二导电层图案的上侧被倒角; 以及在第二导电层图案上形成有第一宽度W的第二绝缘层，其中第二绝缘层的侧壁悬垂在第二导电层图案的上边缘上。在半导体器件制造中，在形成限定金属硅化物层图案的倒角上边缘的底切区域时，进行各向同性干蚀刻，其中各向同性干蚀刻可以与光致抗蚀剂图案的灰化或灰化之后立即同时进行过程在同一个房间。在任一种情况下，在光致抗蚀剂图案的灰化之后，可以在执行现有的剥离工艺之后立即执行各向同性的湿蚀刻，以形成底切区域。

33. 发明授权

US5843842A Method for manufacturing a semiconductor device having a wiring layer without producing silicon precipitates 失效
标题翻译：制造具有布线层而不产生硅沉淀物的半导体器件的方法
公开(公告)号：US5843842A
公开(公告)日：1998-12-01
申请号：US697880
申请日：1996-09-03
申请人： Sang-in Lee , Jeong-in Hong , Jong-ho Park
发明人： Sang-in Lee , Jeong-in Hong , Jong-ho Park
IPC分类号： H01L23/52 , H01L21/027 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/532 , H01L21/441
CPC分类号： H01L21/76843 , H01L21/0276 , H01L21/28512 , H01L21/76855 , H01L21/76858 , H01L21/76864 , H01L21/76877 , H01L21/76879 , H01L23/485 , H01L23/53223 , H01L23/53271 , H01L2924/0002
摘要： A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole) and a first conductive layer formed on the insulating layer which completely fills the opening. The first conductive layer does not produce any Si precipitates in a subsequent heat-treating step for filling the opening with the first conductive layer material. The semiconductor device may further include a second conductive layer having a planarized surface on the first conductive layer. This improves subsequent photolithography. An anti-reflective layer may be formed on the second conductive layer for preventing an unwanted reflection during a photo lithography process. The semiconductor device preferably includes a diffusion barrier layer under the first conductive layer and on the semiconductor substrate, on the insulating layer, and on the inner surface of the opening which prevents a reaction between the first conductive layer and the semiconductor substrate or the insulating layer. A method for forming the wiring layer is also disclosed. Providing a semiconductor device with the wiring layer reduces the leakage current by preventing Al spiking. Since the first conductive layer undergoes a heat-treatment step at a temperature below the melting point, while flowing into the opening and completely filling it with the first conductive layer material, no void is formed in the opening. Good semiconductor device reliability is ensured in spite of the contact hole being less than 1 .mu.m in size and having an aspect ratio greater than 1.0.
摘要翻译：公开了具有新型接触结构的半导体器件的布线层。半导体器件包括半导体衬底，具有开口（接触孔）的绝缘层和形成在绝缘层上的完全填充开口的第一导电层。在随后的用第一导电层材料填充开口的热处理步骤中，第一导电层不产生任何Si沉淀物。半导体器件还可以包括在第一导电层上具有平坦化表面的第二导电层。这改善了随后的光刻。可以在第二导电层上形成抗反射层，以防止在光刻工艺期间不期望的反射。半导体器件优选地包括在第一导电层下方，半导体衬底上的绝缘层上的扩散阻挡层，以及防止第一导电层与半导体衬底或绝缘层之间的反应的开口内表面。还公开了一种用于形成布线层的方法。提供具有布线层的半导体器件通过防止Al尖峰来减少漏电流。由于第一导电层在低于熔点的温度下经历热处理步骤，同时流入开口并用第一导电层材料完全填充，因此在开口中不形成空隙。尽管接触孔的尺寸小于1μm，并且纵横比大于1.0，确保良好的半导体器件的可靠性。

34. 发明授权

US09192911B2 Oxygen-selective adsorbent having fast adsorption rate and preparation method thereof 有权
标题翻译：具有快吸附速率的氧选择性吸附剂及其制备方法
公开(公告)号：US09192911B2
公开(公告)日：2015-11-24
申请号：US13980094
申请日：2012-01-26
申请人： Jong Ho Park , Kwang Bok Yi , Jong Nam Kim , Hee Tae Beum , Jong Kee Park , Chang Hyun Ko , Sang Sup Han , Soon Haeng Cho , Taesung Jung
发明人： Jong Ho Park , Kwang Bok Yi , Jong Nam Kim , Hee Tae Beum , Jong Kee Park , Chang Hyun Ko , Sang Sup Han , Soon Haeng Cho , Taesung Jung
IPC分类号： C01F11/18 , B01J20/04 , B01D53/02 , C01F11/06 , B01J20/30
CPC分类号： B01J20/041 , B01D53/02 , B01D2251/402 , B01D2251/408 , B01D2251/602 , B01D2251/606 , B01D2253/112 , B01D2257/104 , B01D2258/06 , B01J20/043 , B01J20/3078 , B01J20/3293 , B01J2220/42 , C01F11/06 , C01F11/18 , C01P2002/72 , C01P2002/88 , C01P2004/03
摘要： Provided is a preparation method of an oxygen-selective adsorbent selectively adsorbing oxygen in the air and an oxygen-selective adsorbent prepared thereby. The preparation method includes: preparing BaMg(CO3)2 particles or particles in which MgCO3 or Mg(OH)2 are attached to the outside of BaMg(CO3)2; and sintering the particles at a high temperature. The oxygen-selective adsorbent according to the present invention may adsorb oxygen in the air at a fast rate as compared with an existing oxygen-selective adsorbent and have high thermal stability and excellent oxygen adsorptivity.
摘要翻译：提供了选择性吸附空气中的氧的氧选择性吸附剂的制备方法和由此制备的氧选择性吸附剂。制备方法包括：制备BaMg（CO3）2颗粒或其中MgCO3或Mg（OH）2附着在BaMg（CO3）2外部的颗粒; 并在高温下烧结颗粒。与现有的氧选择性吸附剂相比，根据本发明的氧选择性吸附剂可以以较快的速度吸附空气中的氧并且具有高热稳定性和优异的氧吸附性。

35. 发明授权

US09087734B2 Non-volatile memory devices with non-uniform floating gate coupling 有权
标题翻译：具有非均匀浮栅耦合的非易失性存储器件
公开(公告)号：US09087734B2
公开(公告)日：2015-07-21
申请号：US13158990
申请日：2011-06-13
申请人： Joon-Sung Lim , Jong-Ho Park , Ok-Cheon Hong , Ji-Hwan Jeon
发明人： Joon-Sung Lim , Jong-Ho Park , Ok-Cheon Hong , Ji-Hwan Jeon
IPC分类号： H01L29/788 , H01L29/66 , G11C11/34 , H01L27/115
CPC分类号： H01L27/11521 , H01L27/11519
摘要： A memory device includes a substrate having an active region defined therein that extends linearly along a first direction. The device also includes a select line on the substrate and extending along a second direction to perpendicularly cross the active region, first and second floating gate patterns on the active region and spaced apart along the first direction, and first and second dielectric patterns on respective ones of the first and second floating gate patterns. The device further includes first and second word lines on respective ones of the first and second dielectric patterns and extending in parallel with the select line along the first direction. A first area of overlap of the first word line with the first floating gate pattern and the first dielectric pattern is less than a second area of overlap of the second word line with the second floating gate pattern and the second dielectric pattern. The first word line may be disposed between the select line and the second word line.
摘要翻译：存储器件包括其中限定在其中的有源区域沿着第一方向线性延伸的衬底。该器件还包括在衬底上的选择线，并沿着第二方向延伸以垂直地穿过有源区，有源区上的第一和第二浮动栅极图案并沿着第一方向间隔开，并且在相应的一个上分开的第一和第二电介质图案的第一和第二浮栅图案。该装置还包括在第一和第二电介质图案的相应的第一和第二字线上并沿着第一方向与选择线平行延伸的第一和第二字线。第一字线与第一浮栅图案和第一介电图案的重叠的第一区域小于第二字线与第二浮栅图案和第二介质图案的第二重叠区域。第一字线可以设置在选择线和第二字线之间。

36. 发明授权

US08581171B2 Cyclic A/D converter, image sensor device, and method for generating digital signal from analog signal 有权
标题翻译：循环A / D转换器，图像传感器装置以及从模拟信号产生数字信号的方法
公开(公告)号：US08581171B2
公开(公告)日：2013-11-12
申请号：US13124319
申请日：2009-10-15
申请人： Shoji Kawahito , Jong-ho Park , Satoshi Aoyama , Keigo Isobe
发明人： Shoji Kawahito , Jong-ho Park , Satoshi Aoyama , Keigo Isobe
IPC分类号： H01L27/146
CPC分类号： H03M1/0695 , H03M1/123 , H03M1/403 , H04N5/3658 , H04N5/3745 , H04N5/378
摘要： A cyclic A/D converter which can reduce the number of reference voltages for D/A conversion is provided. The cyclic A/D converter (11) comprises a gain stage (15), an A/D converter circuit (17), a logic circuit (19), and a D/A converter circuit (21). In an operational action of the gain stage (15), an operational value (VOP) is generated by the use of an operational amplifier circuit (23) and capacitors (25, 27, 29). The gain stage (15) operates as receiving three kinds of voltage signal from the D/A converter circuit (21) by the switching of two kinds of voltage signal (VDA1, VDA2) to be applied to the capacitors (25, 27) in a switching circuit (31). That is, the D/A converter circuit (21) provides a voltage signal (VRH) to the capacitors (25, 27), in response to a value (D=2) of a digital signal (B0, B1), provides voltage signals (VRH, VRL) to the capacitors (25, 27), respectively, in response to a value (D=1) of the signal (B0, B1), and provides the voltage signal (VRL) to the capacitors (25, 27), in response to a value (D=0) of the signal (B0, B1).
摘要翻译：提供了可以减少用于D / A转换的参考电压数量的循环A / D转换器。循环A / D转换器（11）包括增益级（15），A / D转换器电路（17），逻辑电路（19）和D / A转换器电路（21）。在增益级（15）的操作动作中，通过使用运算放大器电路（23）和电容器（25,27,29）产生运算值（VOP）。增益级（15）通过切换要施加到电容器（25,27）的两种电压信号（VDA1，VDA2）来接收来自D / A转换器电路（21）的三种电压信号，开关电路（31）。也就是说，D / A转换器电路（21）响应于数字信号（B0，B1）的值（D = 2）向电容器（25,27）提供电压信号（VRH），提供电压分别响应信号（B0，B1）的值（D = 1）向电容器（25,27）输出信号（VRH，VRL），并将电压信号（VRL）提供给电容器（25,27）响应于信号（B0，B1）的值（D = 0）27）。

37. 发明授权

US08556534B2 Attachment coupler for heavy machinery 有权
标题翻译：重型机械附件联轴器
公开(公告)号：US08556534B2
公开(公告)日：2013-10-15
申请号：US13331769
申请日：2011-12-20
申请人： Jong-Hyuk Lim , Jong-Ho Park , Seong-Tae Jeon
发明人： Jong-Hyuk Lim , Jong-Ho Park , Seong-Tae Jeon
IPC分类号： E02F3/96
CPC分类号： E02F3/3618 , E02F3/3622 , E02F3/365 , E02F3/3663
摘要： An attachment coupler for heavy machinery, which detachably installs an attachment to an arm of the heavy machinery, includes a coupler body coupled to the arm of the heavy machinery, a fixed hook formed on the coupler body and coupled to the attachment via a first coupling pin, a movable hook rotatably coupled to the coupler body via a hinge axis and coupled to the attachment via a second coupling pin, a hydraulic cylinder that rotates the movable hook to be coupled to or disengaged from the second coupling pin, and a locking device that includes a locking hook and an engagement device. The locking hook is rotatably coupled to the coupler body via a hinge axis and closes an open end of the fixed hook while being coupled to the first coupling pin. The engagement device rotates in association with the rotation of the movable hook.
摘要翻译：一种用于重型机械的附接联接器，其可拆卸地安装到重型机械的臂上的附件，包括联接到重型机械臂的联接器主体，形成在联接器主体上的固定钩，并经由第一联接器销，可动钩，其通过铰链轴线可旋转地联接到联接器主体并且经由第二联接销联接到附件;液压缸，其使可动钩旋转以与第二联接销联接或脱离;以及锁定装置其包括锁定钩和接合装置。锁定钩通过铰链轴线可旋转地联接到联接器主体，并且在联接到第一联接销的同时闭合固定钩的开口端。接合装置与可动钩的旋转相关联地旋转。

38. 发明申请

US20120213035A1 BOARD FOR SYNTHETIC APERTURE BEAMFORMING APPARTUS 审中-公开
标题翻译：用于合成孔径波纹管的板
公开(公告)号：US20120213035A1
公开(公告)日：2012-08-23
申请号：US13293267
申请日：2011-11-10
申请人： Yang Mo YOO , Tai-Kyong SONG , Jin Ho CHANG , Jeong CHO , Jong Ho PARK
发明人： Yang Mo YOO , Tai-Kyong SONG , Jin Ho CHANG , Jeong CHO , Jong Ho PARK
IPC分类号： H04B1/02
CPC分类号： G01S15/8997 , G01S7/52047
摘要： The present invention relates to a board for a synthetic aperture ultrasound imaging apparatus which includes an analog to digital converter converting M analog channel data into M digital channel data; a partial beamformer unit including N partial beamformers generating N partial beams from the M digital channel data; and an adder adding a partial beam stored in a k-th synthetic aperture memory among a plurality of synthetic aperture memories and a partial beam outputted from a k+1-th partial beamformer to input the added partial beam to a k+1-th synthetic aperture memory. The present invention can facilitate an increase in the number of channels by adding a board without transmitting a lot of channel data between boards by exchanging and synthesizing a part of the scanline data between the boards at rear ends of the boards.
摘要翻译：本发明涉及一种用于合成孔径超声成像设备的板，其包括将M个模拟通道数据转换成M个数字通道数据的模数转换器; 包括从M个数字通道数据产生N个部分波束的N个部分波束成形器的部分波束形成器单元; 以及加法器，其将存储在第k个合成孔径存储器中的部分光束加到多个合成孔径存储器中，以及从第k + 1个部分波束形成器输出的部分波束，以将添加的部分波束输入到第k + 1个合成光圈记忆。本发明可以通过在板之间交换和合成扫描线数据的一部分之间的板之间，通过添加板而不在板之间传输大量信道数据来促进信道数量的增加。

39. 发明授权

US08242007B2 Semiconductor device formed using single polysilicon process and method of fabricating the same 有权
标题翻译：使用单个多晶硅工艺形成的半导体器件及其制造方法
公开(公告)号：US08242007B2
公开(公告)日：2012-08-14
申请号：US12401693
申请日：2009-03-11
申请人： Jong-ho Park , Chang-ki Jeon , Hyi-jeong Park
发明人： Jong-ho Park , Chang-ki Jeon , Hyi-jeong Park
IPC分类号： H01L27/06 , H01L21/60
CPC分类号： H01L21/8249 , H01L21/2256 , H01L21/823814 , H01L27/0623
摘要： Provided are a semiconductor device including a source/drain and a gate formed using a doped polysilicon process, and a method of fabricating the semiconductor device. The method comprises: forming a gate insulating layer on a part of an active region on a first conductivity type epitaxial layer; forming a conductive layer on the epitaxial layer; implanting high concentration impurities of a second conductivity type a first portion of the conductive layer on the gate insulating layer and second portions of the conductive layer on both sides of the first insulating layer; patterning the conductive layer; forming a second insulating layer on the epitaxial layer and high concentration impurity regions of the second conductivity type below the second conductive pattern; and implanting low-concentration impurities of the second conductivity type into the epitaxial layer between a gate structure and the high concentration impurity regions.
摘要翻译：提供了包括使用掺杂多晶硅工艺形成的源极/漏极和栅极的半导体器件，以及制造半导体器件的方法。该方法包括：在第一导电型外延层的有源区的一部分上形成栅极绝缘层; 在外延层上形成导电层; 将第二导电类型的高浓度杂质注入到第一绝缘层的栅绝缘层上的导电层的第一部分和导电层的第二部分上; 图案化导电层; 在所述外延层上形成第二绝缘层，在所述第二导电图案之下形成所述第二导电类型的高浓度杂质区; 以及将第二导电类型的低浓度杂质注入到栅极结构和高浓度杂质区之间的外延层中。

40. 发明申请

US20120203905A1 M2M SERVCE PROVIDING SYSTEM, M2M TERMINAL, AND OPERATION METHODS THEREOF 审中-公开
标题翻译： M2M伺服器提供系统，M2M终端及其操作方法
公开(公告)号：US20120203905A1
公开(公告)日：2012-08-09
申请号：US13367588
申请日：2012-02-07
申请人： Ki-Ho Lee , Jong-Ho Park
发明人： Ki-Ho Lee , Jong-Ho Park
IPC分类号： G06F15/173
CPC分类号： H04L69/28 , H04W4/70 , H04W8/06 , H04W60/04
摘要： Provided are a machine to machine (M2M) service providing system, M2M terminals, and operation methods thereof. The M2M service providing system may include a location registration server and a M2M managing server. The location registration server may be configured to receive a location registration request from a M2M terminal and transmit a location registration response to the at least one M2M terminal, thereby allowing the at least one M2M terminal to access a mobile communication network. The M2M managing server may be configured to provide one of inactivation timer information and M2M server access period timer information in the M2M terminal according to a M2M service enrollment status of the M2M terminal.
摘要翻译：提供机器到机器（M2M）服务提供系统，M2M终端及其操作方法。 M2M服务提供系统可以包括位置注册服务器和M2M管理服务器。位置登记服务器可以被配置为从M2M终端接收位置注册请求，并且向所述至少一个M2M终端发送位置登记响应，从而允许所述至少一个M2M终端接入移动通信网络。 M2M管理服务器可以被配置为根据M2M终端的M2M服务登记状态在M2M终端中提供灭活定时器信息和M2M服务器访问周期定时器信息之一。

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