会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 32. 发明申请
    • PROTRUDING POST RESISTIVE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
    • 推进后电阻记忆体装置及其制造方法
    • US20130140516A1
    • 2013-06-06
    • US13599259
    • 2012-08-30
    • Hyun-Ju LEEJae-Kyu LEE
    • Hyun-Ju LEEJae-Kyu LEE
    • H01L47/00H01L21/02
    • H01L27/2436H01L27/2463H01L45/04H01L45/06H01L45/1233H01L45/144
    • A resistive memory device may include a substrate, gate electrode structures, a first impurity region, a second impurity region, a first metal silicide pattern and a second metal silicide pattern. The substrate may have a first region where isolation patterns and first active patterns may be alternately arranged in a first direction, and a second region where linear second active patterns may be extended in the first direction. The gate electrode structures may be arranged between the first region and the second region of the substrate. The first and second impurity regions may be formed in the first and second impurity regions. The first metal silicide pattern may have an isolated shape configured to make contact with an upper surface of the first impurity region. The second metal silicide pattern may make contact with an upper surface of the second impurity region.
    • 电阻式存储器件可以包括衬底,栅电极结构,第一杂质区,第二杂质区,第一金属硅化物图案和第二金属硅化物图案。 衬底可以具有其中隔离图案和第一有源图案可以沿第一方向交替布置的第一区域,以及可以在第一方向上延伸线性第二有源图案的第二区域。 栅极电极结构可以布置在衬底的第一区域和第二区域之间。 第一和第二杂质区可以形成在第一和第二杂质区中。 第一金属硅化物图案可以具有被配置为与第一杂质区域的上表面接触的隔离形状。 第二金属硅化物图案可以与第二杂质区域的上表面接触。
    • 33. 发明授权
    • Image forming apparatus and control method thereof
    • 图像形成装置及其控制方法
    • US08107132B2
    • 2012-01-31
    • US12181505
    • 2008-07-29
    • Jae Kyu Lee
    • Jae Kyu Lee
    • H04N1/40
    • H04N1/4076H04N1/6027
    • An image forming apparatus and a control method thereof are disclosed. The disclosed image forming apparatus includes a white reference sheet provided at one side of a flat bed, for scanning an object, an image sensor module including an image sensor to detect light reflected from the white reference sheet in a scanning operation for the white reference sheet and light reflected from an image on the object in a scanning operation for the object, and to output analog image signals respectively corresponding to the reflected lights, an analog front end (AFE) to convert each analog image signal output from the image sensor to a digital image signal, a shading memory to store shading data obtained in the scanning operation for the white reference sheet, and a controller to calculate differences among outputs from R, G, and B channels of the image sensor, using the stored shading data, to correct the stored shading data, based on the calculated output differences, and to correct image data outputs generated from the R, G, and B channels in the scanning operation for the object, based on the calculated output differences. The image forming apparatus can correct different physical offset values possibly present at different color channels in a color scanning operation. Accordingly, it is possible to adjust the color balance of a scanned image, and thus to achieve an enhancement in the color quality of the image.
    • 公开了一种图像形成装置及其控制方法。 所公开的图像形成装置包括设置在平板的一侧的用于扫描物体的白色基准片,包括图像传感器的图像传感器模块,用于在白色基准片的扫描操作中检测从白色基准片反射的光 以及在物体的扫描操作中从物体上的图像反射的光,并且分别输出与反射光对应的模拟图像信号,将模拟前端(AFE)转换成从图像传感器输出的每个模拟图像信号到 数字图像信号,用于存储在白色参考纸的扫描操作中获得的阴影数据的阴影存储器,以及控制器,用于计算图像传感器的R,G和B信道的输出之间的差异,使用所存储的阴影数据, 基于计算出的输出差异校正存储的阴影数据,并且校正在扫描操作中从R,G和B通道产生的图像数据输出 对于对象,基于计算出的输出差异。 图像形成装置可以在彩色扫描操作中校正可能存在于不同颜色通道的不同物理偏移值。 因此,可以调整扫描图像的色彩平衡,从而实现图像的颜色质量的提高。
    • 34. 发明授权
    • MOS transistor in a semiconductor device
    • MOS晶体管在半导体器件中
    • US07521767B2
    • 2009-04-21
    • US10227343
    • 2002-08-26
    • Jae-Kyu LeeJae-Goo Lee
    • Jae-Kyu LeeJae-Goo Lee
    • H01L29/76
    • H01L29/41783H01L21/28518H01L21/76895H01L21/823814H01L21/823828H01L21/82385H01L21/823864H01L21/823871H01L27/105H01L27/1052H01L29/41775
    • Methods of forming a MOS transistor and a MOS transistor fabricated thereby are provided. The MOS transistor includes a semiconductor substrate of a first conductivity type, and an insulated gate pattern having sidewalls disposed on a predetermined region of the semiconductor substrate of a first conductivity type so that portions of the semiconductor substrate of a first conductivity type on at least one side of the insulated gate pattern remain uncovered by the insulated gate pattern. The MOS transistor also includes impurity regions having at least an upper surface of a second conductivity type disposed on the semiconductor substrate at at least one side of the insulated gate pattern, as well as at least one spacer disposed on at least one sidewall of the insulated gate pattern. The MOS transistor further contains a pad of a second conductivity type disposed on an upper surface of the impurity regions, whereby the pad covers a lower portion of the at least one spacer.
    • 提供了形成MOS晶体管和由此制造的MOS晶体管的方法。 MOS晶体管包括第一导电类型的半导体衬底和具有设置在第一导电类型的半导体衬底的预定区域上的侧壁的绝缘栅极图案,使得在至少一个第一导电类型上的第一导电类型的半导体衬底的部分 绝缘栅极图案的一侧保持未被绝缘栅极图案覆盖。 MOS晶体管还包括在绝缘栅极图案的至少一侧具有至少设置在半导体衬底上的第二导电类型的上表面的杂质区域,以及设置在绝缘栅极图案的至少一个侧壁上的至少一个间隔物 门模式。 MOS晶体管还包含布置在杂质区的上表​​面上的第二导电类型的焊盘,由此焊盘覆盖至少一个间隔物的下部。
    • 35. 发明申请
    • SCANNING DEVICE AND SHADING CORRECTION METHOD THEREOF
    • 扫描设备及其校正方法
    • US20080100879A1
    • 2008-05-01
    • US11839869
    • 2007-08-16
    • Jae-kyu LEE
    • Jae-kyu LEE
    • H04N1/40H04N1/00
    • H04N1/401
    • A scanning device includes a display part, a flat bed on which a manuscript is loaded, a white reference sheet provided at one side of the flat bed, a scanning head to divide the white reference sheet into a plurality of lines and to obtain shading data corresponding to the plurality of lines by scanning the plurality of lines, a storage part in which the shading data for the plurality of lines is stored, and a controller to calculate a maximum value and a minimum value of the shading data by comparing the shading data of each pixel at a same position in the scanning head from the plurality of lines, and to control the display part to display an error message if a difference between the maximum value and the minimum value of the shading data is out of a reference range.
    • 扫描装置包括显示部分,装载有原稿的平板,设置在平板一侧的白色基准片,将白色基准片划分成多条线的扫描头,并获得阴影数据 通过扫描多条线对应于多条线,存储多条线的着色数据的存储部分,以及通过比较阴影数据来计算着色数据的最大值和最小值的控制器 ,并且如果遮蔽数据的最大值和最小值之间的差异超出参考范围,则控制显示部分显示错误消息。
    • 36. 发明授权
    • Method for fabricating a semiconductor device reducing junction leakage current and narrow width effect
    • 制造半导体器件的方法,减少结漏电流和窄宽度效应
    • US06537888B2
    • 2003-03-25
    • US09870298
    • 2001-05-30
    • Jae-kyu Lee
    • Jae-kyu Lee
    • H01L2176
    • H01L29/1033H01L21/76235H01L21/76237
    • A semiconductor device for reducing junction leakage current and mitigating the narrow width effect, and a fabrication method thereof, are provided. The semiconductor device includes a semiconductor substrate in which an active region and an isolation region including a trench are formed, a spacer which is formed on both sidewalls of the trench, a channel stop impurity region which is self-aligned by the spacer and locally formed only at the lower portion of the isolation region, an isolation insulating layer in which the trench is buried, and a gate pattern which is formed on the isolation insulating layer and the active region. When the channel stop impurity region is formed only at the lower portion of the isolation region, isolation characteristics between unit cells can be improved, and also, a junction leakage current can be reduced. Further, the present invention can reduce a narrow width effect, in which a threshold voltage rapidly decreases as a channel width becomes narrower, owing to the formation of the channel stop impurity region on the edges of the active region.
    • 提供了用于减少结漏电流并减轻窄宽度效应的半导体器件及其制造方法。 半导体器件包括其中形成有源区和包括沟槽的隔离区的半导体衬底,形成在沟槽的两个侧壁上的间隔物,通过间隔物自对准并且局部形成的沟道阻挡杂质区 仅在隔离区域的下部,隔离绝缘层,沟槽被埋入其中,以及形成在隔离绝缘层和有源区上的栅极图案。 当通道阻挡杂质区只形成在隔离区的下部时,能够提高单位电池之间的隔离特性,并且还可以降低结漏电流。 此外,由于在有源区域的边缘上形成沟道截止杂质区域,本发明可以减小阈值电压随着沟道宽度变窄而急剧减小的窄宽度效应。