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31. 发明申请

US20070230528A1 Semiconductor Laser Device and Semiconductor Laser Element Array 失效
标题翻译：半导体激光器件和半导体激光元件阵列
公开(公告)号：US20070230528A1
公开(公告)日：2007-10-04
申请号：US11596249
申请日：2005-06-23
申请人： Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
发明人： Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
IPC分类号： H01S5/20
CPC分类号： H01S5/22
摘要： The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces. In this case, the relative angle of the side surfaces in the first portion to the light emitting surface and light reflecting surface is different from the relative angle of the side surfaces in the second portion to the light emitting surface and light reflecting surface.
摘要翻译：本发明涉及例如能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件。半导体激光元件包括第一半导体部分，有源层和第二半导体部分。第一半导体部分具有用于在有源层中形成折射率型波导区域的脊部分。波导区域至少包括在其侧表面具有各自不同的全反射临界角的第一和第二部分。第一和第二部分被布置成使得其侧表面相对于发光表面的相对角度和位于有源层的任一端的光反射表面大于侧表面处的全反射临界角。在这种情况下，第一部分中的侧表面与发光表面和光反射表面的相对角度与第二部分中的侧表面相对于发光表面和光反射表面的相对角度不同。

32. 发明授权

US06895026B2 Heat sink and semiconductor laser apparatus and semiconductor laser stack apparatus using the same 失效
标题翻译：散热器和半导体激光装置及使用其的半导体激光堆叠装置
公开(公告)号：US06895026B2
公开(公告)日：2005-05-17
申请号：US09773509
申请日：2001-02-02
申请人： Hirofumi Miyajima , Hirofumi Kan , Toshio Naitoh , Hirokazu Ohta , Takeshi Kanzaki
发明人： Hirofumi Miyajima , Hirofumi Kan , Toshio Naitoh , Hirokazu Ohta , Takeshi Kanzaki
IPC分类号： H01L23/473 , H05K7/20 , H01S3/04
CPC分类号： H01S5/02423 , H01L23/473 , H01L2924/0002 , H01S5/02268 , H01S5/4031 , H01S5/405 , H01L2924/00
摘要： A semiconductor laser stack apparatus 1 comprises three semiconductor lasers 2a to 2c, two copper plates 3a and 3b, two lead plates 4a and 4b, a supply tube 5, a discharge tube 6, four insulating members 7a to 7d, and three heat sinks 10a to 10c. Here, the heat sink 10a to 10c is formed by a lower planar member 12 formed with a supply water path groove portion 22, an intermediate planar member 14 formed with a plurality of water guiding holes 38, and an upper planar member 16 formed with a discharge water path groove portion 30 which are successively stacked one upon another, whereas their contact surfaces are joined together. The heat sink 10a to 10c is provided with pillar pieces 24 for connecting the bottom face of supply water path groove portion 22 and the lower face of intermediate planar member 14 to each other, and pillar pieces 32 for connecting the bottom face of discharge water path groove portion 30 and the upper face of intermediate planar member 14 to each other.
摘要翻译：半导体激光器堆叠装置1包括三个半导体激光器2a至2c，两个铜板3a和3b，两个引线板4a和4b，供应管5，放电管6，四个绝缘构件7a至 7d，以及三个散热片10a〜10c。这里，散热器10a〜10c由形成有供水路径槽部22的下平面部件12，形成有多个导水孔38的中间平面部件14和形成有上部平面部件16的下部平面部件12形成具有相继层叠的排水路径槽部30，而其接触面接合在一起。散热片10 a至10 c设置有用于将供水路径槽部22的底面和中间平面构件14的下表面彼此连接的支柱24，以及用于连接排出口的底面的支柱32 水通道槽部30和中间平面状部件14的上表面。

33. 发明授权

US07944956B2 Heat sink, laser apparatus provided with such heat sink, and laser stack apparatus 失效
标题翻译：散热器，配有这种散热器的激光装置和激光堆叠装置
公开(公告)号：US07944956B2
公开(公告)日：2011-05-17
申请号：US11917971
申请日：2006-04-27
申请人： Hirofumi Miyajima , Hirofumi Kan , Nobuo Watanabe , Satoru Ooishi , Nobutaka Suzuki
发明人： Hirofumi Miyajima , Hirofumi Kan , Nobuo Watanabe , Satoru Ooishi , Nobutaka Suzuki
IPC分类号： H01S3/04
CPC分类号： H01L23/473 , H01L2924/0002 , H01S5/02264 , H01S5/02423 , H01S5/4018 , H01S5/4025 , H01L2924/00
摘要： A heat sink has a first flat plate, a partition plate, and a second flat plate. The first flat plate has an upper surface in which a first recess is formed. The second flat plate has a lower surface in which a second recess is formed, and an upper surface on which a semiconductor laser element is mounted. These recesses form a part of a refrigerant channel. The partition plate has a lower surface covering the first recess, an upper surface covering the second recess, and at least one through hole having the first recess communicated with the second recess. The first flat plate and the second flat plate both have a first coefficient of thermal expansion. The partition plate has a second coefficient of thermal expansion lower than the first coefficient of thermal expansion.
摘要翻译：散热器具有第一平板，隔板和第二平板。第一平板具有形成有第一凹部的上表面。第二平板具有形成有第二凹部的下表面和安装有半导体激光元件的上表面。这些凹部形成制冷剂通道的一部分。隔板具有覆盖第一凹部的下表面，覆盖第二凹部的上表面，以及具有与第二凹部连通的第一凹部的至少一个通孔。第一平板和第二平板都具有第一热膨胀系数。分隔板具有比第一热膨胀系数低的第二热膨胀系数。

34. 发明授权

US07522643B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07522643B2
公开(公告)日：2009-04-21
申请号：US11628413
申请日：2005-07-06
申请人： Hirofumi Miyajima , Hirofumi Kan
发明人： Hirofumi Miyajima , Hirofumi Kan
IPC分类号： H01S3/04
CPC分类号： H01S5/02423 , H01L24/83 , H01L2224/83801 , H01L2924/01068 , H01L2924/01079 , H01S5/02236 , H01S5/02272 , H01S5/405
摘要： The present invention relates to a semiconductor laser apparatus having a metal body which efficiently cools a semiconductor laser element, in which joining of copper-made members coated with DLC layers and prevention of corrosion in the vicinity of joined portions are possible. The semiconductor laser apparatus has a metal body as a heat sink for cooling the semiconductor laser element. The metal body is constituted by a plurality of copper-made members, and the surfaces of each copper-made members are continuously coated with a diamond carbon layer except for regions corresponding to an exposed region in which the semiconductor laser element is mounted.
摘要翻译：本发明涉及一种半导体激光装置，其具有有效地冷却半导体激光元件的金属体，其中涂覆有DLC层的铜制部件的接合和防止接合部附近的腐蚀是可能的。半导体激光装置具有用于冷却半导体激光元件的散热器的金属体。金属体由多个铜制构件构成，除了与安装半导体激光元件的露出区域对应的区域之外，每个铜制构件的表面连续地涂覆有金刚石碳层。

35. 发明申请

US20080279239A1 Semiconductor Laser Device and Method of Manufacturing the Same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20080279239A1
公开(公告)日：2008-11-13
申请号：US10577958
申请日：2004-12-16
申请人： Hirofumi Kan , Hirofumi Miyajima , Nobuo Watanabe
发明人： Hirofumi Kan , Hirofumi Miyajima , Nobuo Watanabe
IPC分类号： H01S3/04
CPC分类号： H01S5/02423 , H01L23/473 , H01L2924/0002 , H01S5/02476 , H01S5/4025 , H01S5/405 , H01L2924/00
摘要： A semiconductor laser device 1 comprises: a heat sink 20, in turn comprising a main cooler unit 21, formed by joining metal members, a fluid channel 30, formed inside the main cooler unit 21, a cooling region 23 on an outer wall surface 22, and a resin layer 40, being continuously coated onto the outer wall surface 22 and an inner wall surface 33 with the exception of the cooling region 23; and a semiconductor laser element 80, positioned at the cooling region 23 with thermal contact with the outer wall surface 22 being maintained. By continuously coating the outer wall surface 22 and the inner wall surface 33 with the resin layer 40 with the exception of the cooling region 23, prevention of corrosion near portions at which the outer wall surface and the inner wall surface contact each other is realized.
摘要翻译：半导体激光装置1包括：散热器20，其又包括通过连接金属构件形成的主冷却器单元21，形成在主冷却器单元21内部的流体通道30，外壁表面22上的冷却区域23 ，除了冷却区域23以外，连续地涂布在外壁面22和内壁面33上的树脂层40。并且与保持与外壁面22热接触的位于冷却区域23的半导体激光元件80。通过除了冷却区域23之外，通过用树脂层40连续地涂覆外壁面22和内壁面33，可以防止在外壁面和内壁面彼此接触的部分附近的腐蚀。

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