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1. 发明申请

US20090022194A1 Semiconductor laser device and semiconductor laser device array 失效
标题翻译：半导体激光器件和半导体激光器件阵列
公开(公告)号：US20090022194A1
公开(公告)日：2009-01-22
申请号：US11659198
申请日：2005-08-04
申请人： Akiyoshi Watanabe , Hirofumi Miyajima , Hirofumi Kan
发明人： Akiyoshi Watanabe , Hirofumi Miyajima , Hirofumi Kan
IPC分类号： H01S5/20
CPC分类号： H01S5/4031 , H01S5/101 , H01S5/1014 , H01S5/1085 , H01S5/16 , H01S5/2231 , H01S2301/18
摘要： In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main waveguide 4 form a relative angle θ, based on a total reflection critical angle θc at the side surfaces 4g and 4h, with respect to a light emitting surface 1a and a light reflecting surface 1b. The main waveguide 4 is separated by predetermined distances from the light emitting surface 1a and the light reflecting surface 1b, and optical path portions 8a and 8b, for making a laser light L1 pass through, are disposed between one end of the main waveguide 4 and the light emitting surface 1a and between the other end of the main waveguide 4 and the light reflecting surface 1b. The optical path portions 8a and 8b are gain type waveguides and emit light components L2 and L3, which, among the light passing through the optical path portions 8a and 8b, deviate from a direction of a predetermined axis A, to the exterior. A semiconductor laser device and a semiconductor laser device array that can emit laser light of comparatively high intensity and can reduce side peaks are thereby realized.
摘要翻译：在半导体激光器件3的有源层15中，折射率型主波导4由p型覆盖层17的脊部9a形成。主波导4的侧表面4g和4h形成相对角θ 基于相对于发光表面1a和光反射表面1b在侧表面4g和4h处的全反射临界角度。主波导4与发光面1a和光反射面1b分离规定距离，激光L1通过的光路部8a，8b配置在主波导管4的一端和发光表面1a和主波导4的另一端和光反射表面1b之间。光路部分8a和8b是增益型波导，并且发射光通过光路部分8a和8b的光从预定轴线A的方向偏离的光分量L2和L3到外部。从而可以实现能够发出较高强度的激光并能够减少侧峰的半导体激光器件和半导体激光器件阵列。

2. 发明申请

US20080273564A1 Semiconductor Laser Element and Semiconductor Laser Element Array 审中-公开
标题翻译：半导体激光元件和半导体激光元件阵列
公开(公告)号：US20080273564A1
公开(公告)日：2008-11-06
申请号：US11662600
申请日：2005-09-13
申请人： You Wang , Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
发明人： You Wang , Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
IPC分类号： H01S5/026
CPC分类号： H01S5/10 , H01S5/0655 , H01S5/101 , H01S5/1085 , H01S5/4031
摘要： A semiconductor laser device 3 includes an n-type clad layer 13, an active layer 15, and a p-type clad layer 17. The p-type clad layer 17 has a ridge portion 9 that forms a waveguide 4 in the active layer 15. The waveguide 4 extends along a central axial line B that is curved at a substantially constant curvature (curvature radius R). In such a waveguide 4, of the light components that resonate inside the waveguide 4, light components of higher spatial transverse mode order are greater in loss. Laser oscillations of high-order transverse modes can thus be suppressed while maintaining laser oscillations of low-order transverse modes. A semiconductor laser device and a semiconductor laser device array, which can emit laser light of comparatively high intensity and with which high-order transverse modes can be suppressed, are thereby realized.
摘要翻译：半导体激光器件3包括n型覆盖层13，有源层15和p型覆盖层17。 p型覆盖层17具有在有源层15中形成波导4的脊部9。波导4沿着基本上恒定曲率（曲率半径R）弯曲的中心轴线B延伸。在这样的波导管4中，在波导4内谐振的光分量中，空间横向模式次序的光分量的损耗更大。因此可以抑制高阶横模的激光振荡，同时保持低阶横模的激光振荡。由此，可以实现能够发出较高强度的高光束和可以抑制高阶横模的半导体激光器件和半导体激光器件阵列。

3. 发明授权

US07447248B2 Semiconductor laser element and semiconductor laser element array 失效
标题翻译：半导体激光元件和半导体激光元件阵列
公开(公告)号：US07447248B2
公开(公告)日：2008-11-04
申请号：US10591229
申请日：2005-03-04
申请人： Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
发明人： Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/22 , H01S5/0655 , H01S5/10 , H01S5/101 , H01S5/1085 , H01S5/2036 , H01S5/4031 , H01S2301/18
摘要： The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type cladding layer has a ridge portion for forming a refractive index type waveguide in the active layer. The ridge portion, at least the portion excluding the edges, extends in a direction crossing each normal line of both end faces of the refractive index type waveguide, which corresponds to the light emitting face and light reflecting face respectively, at an angle θ, which is equal to or less than the complementary angle θc of the total reflection critical angle on the side face of the refractive index type waveguide. The optical paths of light components which resonate in the refractive index type waveguide formed by the ridge portion having the above form are limited to optical paths where the lights are totally reflected on the side face of the refractive index type waveguide. In other words, the laser beams emitted from the light emitting end have a spatial horizontal single mode, and the waveguide width can be increased to further decrease the emission angle of the laser beams.
摘要翻译：半导体激光元件等技术领域本发明涉及能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件等。半导体激光元件具有依次层叠n型覆层，有源层和p型覆层的结构。 p型包覆层具有用于在有源层中形成折射率型波导的脊部。脊部至少除了边缘之外的部分沿着与角度θ对应于发光面和光反射面的折射率型波导的两个端面的每条法线的方向延伸，等于或小于折射率型波导侧面上的全反射临界角的互补角度。在由具有上述形式的脊部形成的折射率型波导中共振的光分量的光路限于光折射率型波导的侧面全光反射的光路。换句话说，从发光端发射的激光束具有空间水平单模，并且可以增加波导宽度以进一步降低激光束的发射角。

4. 发明申请

US20070258496A1 Semiconductor Laser Element and Semiconductor Laser Element Array 失效
标题翻译：半导体激光元件和半导体激光元件阵列
公开(公告)号：US20070258496A1
公开(公告)日：2007-11-08
申请号：US10591229
申请日：2005-03-04
申请人： Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
发明人： Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , H01S5/0655 , H01S5/10 , H01S5/101 , H01S5/1085 , H01S5/2036 , H01S5/4031 , H01S2301/18
摘要： The present invention relates to a semiconductor laser element and the like which can efficiently emit laser beams at a small emission angle using a simpler configuration. The semiconductor laser element has a structure where an n-type cladding layer, active layer and p-type cladding layer are sequentially laminated. The p-type cladding layer has a ridge portion for forming a refractive index type waveguide in the active layer. The ridge portion, at least the portion excluding the edges, extends in a direction crossing each normal line of both end faces of the refractive index type waveguide, which corresponds to the light emitting face and light reflecting face respectively, at an angle θ, which is equal to or less than the complementary angle θc of the total reflection critical angle on the side face of the refractive index type waveguide. The optical paths of light components which resonate in the refractive index type waveguide formed by the ridge portion having the above form are limited to optical paths where the lights are totally reflected on the side face of the refractive index type waveguide. In other words, the laser beams emitted from the light emitting end have a spatial horizontal single mode, and the waveguide width can be increased to further decrease the emission angle of the laser beams.
摘要翻译：半导体激光元件等技术领域本发明涉及能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件等。半导体激光元件具有依次层叠n型覆层，有源层和p型覆层的结构。 p型包覆层具有用于在有源层中形成折射率型波导的脊部。脊部至少除了边缘之外的部分沿着与角度θ对应于发光面和光反射面的折射率型波导的两个端面的每条法线的方向延伸，等于或小于折射率型波导侧面上的全反射临界角的互补角度。在由具有上述形式的脊部形成的折射率型波导中共振的光分量的光路限于光折射率型波导的侧面全光反射的光路。换句话说，从发光端发射的激光束具有空间水平单模，并且可以增加波导宽度以进一步降低激光束的发射角。

5. 发明授权

US07885305B2 Semiconductor laser device and semiconductor laser device array 失效
标题翻译：半导体激光器件和半导体激光器件阵列
公开(公告)号：US07885305B2
公开(公告)日：2011-02-08
申请号：US11659198
申请日：2005-08-04
申请人： Akiyoshi Watanabe , Hirofumi Miyajima , Hirofumi Kan
发明人： Akiyoshi Watanabe , Hirofumi Miyajima , Hirofumi Kan
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/101 , H01S5/1014 , H01S5/1085 , H01S5/16 , H01S5/2231 , H01S2301/18
摘要： In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main waveguide 4 form a relative angle θ, based on a total reflection critical angle θc at the side surfaces 4g and 4h, with respect to a light emitting surface 1a and a light reflecting surface 1b. The main waveguide 4 is separated by predetermined distances from the light emitting surface 1a and the light reflecting surface 1b, and optical path portions 8a and 8b, for making a laser light L1 pass through, are disposed between one end of the main waveguide 4 and the light emitting surface 1a and between the other end of the main waveguide 4 and the light reflecting surface 1b. The optical path portions 8a and 8b are gain type waveguides and emit light components L2 and L3, which, among the light passing through the optical path portions 8a and 8b, deviate from a direction of a predetermined axis A, to the exterior. A semiconductor laser device and a semiconductor laser device array that can emit laser light of comparatively high intensity and can reduce side peaks are thereby realized.
摘要翻译：在半导体激光装置3的有源层15中，折射率型主波导4由p型覆盖层17的脊部9a形成。主波导4的侧面4g，4h形成相对角度θ ;相对于发光表面1a和光反射表面1b，基于侧表面4g和4h处的全反射临界角和c。主波导4与发光面1a和光反射面1b分离规定距离，激光L1通过的光路部8a，8b配置在主波导管4的一端和发光表面1a和主波导4的另一端和光反射表面1b之间。光路部分8a和8b是增益型波导，并且发射光通过光路部分8a和8b的光从预定轴线A的方向偏离的光分量L2和L3到外部。从而可以实现能够发出较高强度的激光并能够减少侧峰的半导体激光器件和半导体激光器件阵列。

6. 发明授权

US07577174B2 Semiconductor laser device and semiconductor laser element array 失效
标题翻译：半导体激光器件和半导体激光元件阵列
公开(公告)号：US07577174B2
公开(公告)日：2009-08-18
申请号：US11596249
申请日：2005-06-23
申请人： Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
发明人： Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
IPC分类号： H01S5/10
CPC分类号： H01S5/22
摘要： The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof. The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces. In this case, the relative angle of the side surfaces in the first portion to the light emitting surface and light reflecting surface is different from the relative angle of the side surfaces in the second portion to the light emitting surface and light reflecting surface.
摘要翻译：本发明涉及例如能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件。半导体激光元件包括第一半导体部分，有源层和第二半导体部分。第一半导体部分具有用于在有源层中形成折射率型波导区域的脊部分。波导区域至少包括在其侧表面具有各自不同的全反射临界角的第一和第二部分。第一和第二部分被布置成使得其侧表面相对于位于有源层的任一端处的发光表面和光反射表面的相对角度大于在该有源层的任一端处的全反射临界角侧面。在这种情况下，第一部分中的侧表面与发光表面和光反射表面的相对角度与第二部分中的侧表面相对于发光表面和光反射表面的相对角度不同。

7. 发明申请

US20070230528A1 Semiconductor Laser Device and Semiconductor Laser Element Array 失效
标题翻译：半导体激光器件和半导体激光元件阵列
公开(公告)号：US20070230528A1
公开(公告)日：2007-10-04
申请号：US11596249
申请日：2005-06-23
申请人： Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
发明人： Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
IPC分类号： H01S5/20
CPC分类号： H01S5/22
摘要： The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces. In this case, the relative angle of the side surfaces in the first portion to the light emitting surface and light reflecting surface is different from the relative angle of the side surfaces in the second portion to the light emitting surface and light reflecting surface.
摘要翻译：本发明涉及例如能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件。半导体激光元件包括第一半导体部分，有源层和第二半导体部分。第一半导体部分具有用于在有源层中形成折射率型波导区域的脊部分。波导区域至少包括在其侧表面具有各自不同的全反射临界角的第一和第二部分。第一和第二部分被布置成使得其侧表面相对于发光表面的相对角度和位于有源层的任一端的光反射表面大于侧表面处的全反射临界角。在这种情况下，第一部分中的侧表面与发光表面和光反射表面的相对角度与第二部分中的侧表面相对于发光表面和光反射表面的相对角度不同。

8. 发明授权

US07944956B2 Heat sink, laser apparatus provided with such heat sink, and laser stack apparatus 失效
标题翻译：散热器，配有这种散热器的激光装置和激光堆叠装置
公开(公告)号：US07944956B2
公开(公告)日：2011-05-17
申请号：US11917971
申请日：2006-04-27
申请人： Hirofumi Miyajima , Hirofumi Kan , Nobuo Watanabe , Satoru Ooishi , Nobutaka Suzuki
发明人： Hirofumi Miyajima , Hirofumi Kan , Nobuo Watanabe , Satoru Ooishi , Nobutaka Suzuki
IPC分类号： H01S3/04
CPC分类号： H01L23/473 , H01L2924/0002 , H01S5/02264 , H01S5/02423 , H01S5/4018 , H01S5/4025 , H01L2924/00
摘要： A heat sink has a first flat plate, a partition plate, and a second flat plate. The first flat plate has an upper surface in which a first recess is formed. The second flat plate has a lower surface in which a second recess is formed, and an upper surface on which a semiconductor laser element is mounted. These recesses form a part of a refrigerant channel. The partition plate has a lower surface covering the first recess, an upper surface covering the second recess, and at least one through hole having the first recess communicated with the second recess. The first flat plate and the second flat plate both have a first coefficient of thermal expansion. The partition plate has a second coefficient of thermal expansion lower than the first coefficient of thermal expansion.
摘要翻译：散热器具有第一平板，隔板和第二平板。第一平板具有形成有第一凹部的上表面。第二平板具有形成有第二凹部的下表面和安装有半导体激光元件的上表面。这些凹部形成制冷剂通道的一部分。隔板具有覆盖第一凹部的下表面，覆盖第二凹部的上表面，以及具有与第二凹部连通的第一凹部的至少一个通孔。第一平板和第二平板都具有第一热膨胀系数。分隔板具有比第一热膨胀系数低的第二热膨胀系数。

9. 发明授权

US07522643B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07522643B2
公开(公告)日：2009-04-21
申请号：US11628413
申请日：2005-07-06
申请人： Hirofumi Miyajima , Hirofumi Kan
发明人： Hirofumi Miyajima , Hirofumi Kan
IPC分类号： H01S3/04
CPC分类号： H01S5/02423 , H01L24/83 , H01L2224/83801 , H01L2924/01068 , H01L2924/01079 , H01S5/02236 , H01S5/02272 , H01S5/405
摘要： The present invention relates to a semiconductor laser apparatus having a metal body which efficiently cools a semiconductor laser element, in which joining of copper-made members coated with DLC layers and prevention of corrosion in the vicinity of joined portions are possible. The semiconductor laser apparatus has a metal body as a heat sink for cooling the semiconductor laser element. The metal body is constituted by a plurality of copper-made members, and the surfaces of each copper-made members are continuously coated with a diamond carbon layer except for regions corresponding to an exposed region in which the semiconductor laser element is mounted.
摘要翻译：本发明涉及一种半导体激光装置，其具有有效地冷却半导体激光元件的金属体，其中涂覆有DLC层的铜制部件的接合和防止接合部附近的腐蚀是可能的。半导体激光装置具有用于冷却半导体激光元件的散热器的金属体。金属体由多个铜制构件构成，除了与安装半导体激光元件的露出区域对应的区域之外，每个铜制构件的表面连续地涂覆有金刚石碳层。

10. 发明申请

US20080279239A1 Semiconductor Laser Device and Method of Manufacturing the Same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20080279239A1
公开(公告)日：2008-11-13
申请号：US10577958
申请日：2004-12-16
申请人： Hirofumi Kan , Hirofumi Miyajima , Nobuo Watanabe
发明人： Hirofumi Kan , Hirofumi Miyajima , Nobuo Watanabe
IPC分类号： H01S3/04
CPC分类号： H01S5/02423 , H01L23/473 , H01L2924/0002 , H01S5/02476 , H01S5/4025 , H01S5/405 , H01L2924/00
摘要： A semiconductor laser device 1 comprises: a heat sink 20, in turn comprising a main cooler unit 21, formed by joining metal members, a fluid channel 30, formed inside the main cooler unit 21, a cooling region 23 on an outer wall surface 22, and a resin layer 40, being continuously coated onto the outer wall surface 22 and an inner wall surface 33 with the exception of the cooling region 23; and a semiconductor laser element 80, positioned at the cooling region 23 with thermal contact with the outer wall surface 22 being maintained. By continuously coating the outer wall surface 22 and the inner wall surface 33 with the resin layer 40 with the exception of the cooling region 23, prevention of corrosion near portions at which the outer wall surface and the inner wall surface contact each other is realized.
摘要翻译：半导体激光装置1包括：散热器20，其又包括通过连接金属构件形成的主冷却器单元21，形成在主冷却器单元21内部的流体通道30，外壁表面22上的冷却区域23 ，除了冷却区域23以外，连续地涂布在外壁面22和内壁面33上的树脂层40。并且与保持与外壁面22热接触的位于冷却区域23的半导体激光元件80。通过除了冷却区域23之外，通过用树脂层40连续地涂覆外壁面22和内壁面33，可以防止在外壁面和内壁面彼此接触的部分附近的腐蚀。

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