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    • 31. 发明授权
    • Methods for fabricating integrated circuits
    • 集成电路的制造方法
    • US08541286B2
    • 2013-09-24
    • US13399674
    • 2012-02-17
    • Chang Seo Park
    • Chang Seo Park
    • H01L21/76
    • H01L21/823431H01L21/76232H01L21/76283H01L29/7853
    • Methods are provided for forming semiconductor devices. One method includes forming a first layer overlying a bulk semiconductor substrate. A second layer is formed overlying the first layer. A first plurality of trenches is etched into the first and second layers. The first plurality of trenches is filled to form a plurality of support structures. A second plurality of trenches is etched into the first and second layers. Portions of the second layer disposed between adjacent trenches of the first and second pluralities of trenches define a plurality of fins. The first layer is etched to form gap spaces between the bulk semiconductor substrate and the plurality of fins. The plurality of fins is supported in position adjacent to the gap spaces by the plurality of support structures. The gap spaces are filled with an insulating material.
    • 提供了形成半导体器件的方法。 一种方法包括形成覆盖体半导体衬底的第一层。 第二层形成在第一层上。 第一多个沟槽被蚀刻到第一层和第二层中。 第一多个沟槽被填充以形成多个支撑结构。 第二多个沟槽被蚀刻到第一层和第二层中。 设置在第一和第二多个沟槽的相邻沟槽之间的第二层的部分限定多个鳍。 蚀刻第一层以在体半导体衬底和多个鳍之间形成间隙。 多个翅片通过多个支撑结构支撑在与间隙空间相邻的位置。 间隙空间填充绝缘材料。
    • 35. 发明申请
    • Semiconductor Manufacturing Method Using Maskless Capping Layer Removal
    • 使用无掩模顶盖去除的半导体制造方法
    • US20110006378A1
    • 2011-01-13
    • US12498775
    • 2009-07-07
    • Muhammad HussainChang Seo Park
    • Muhammad HussainChang Seo Park
    • H01L29/78H01L21/3205H01L21/311
    • H01L21/31111H01L21/823842H01L21/823857
    • A method of manufacturing a semiconductor device includes depositing a first capping layer on a dielectric layer. The method also includes etching the first capping layer from a second portion of the semiconductor device. The first capping layer remaining in a first portion of the semiconductor device may form a PMOS device. The method further includes depositing a second capping layer after etching the first capping layer. After the second capping layer is deposited a maskless process results in selectively etching the second capping layer from the first portion of the semiconductor device. The second portion of the semiconductor device may be a NMOS device. The method described may be used in manufacturing integrated CMOS devices as scaling reduces device size. Additionally, the method of selectively etching capping layers may be used to manufacture multi-threshold voltage devices.
    • 制造半导体器件的方法包括在电介质层上沉积第一覆盖层。 该方法还包括从半导体器件的第二部分蚀刻第一覆盖层。 保留在半导体器件的第一部分中的第一覆盖层可以形成PMOS器件。 该方法还包括在蚀刻第一覆盖层之后沉积第二覆盖层。 在沉积第二覆盖层之后,无掩模工艺导致从半导体器件的第一部分选择性地蚀刻第二覆盖层。 半导体器件的第二部分可以是NMOS器件。 所描述的方法可以用于制造集成CMOS器件,因为缩放减小器件尺寸。 此外,选择性蚀刻封盖层的方法可用于制造多阈值电压器件。
    • 36. 发明授权
    • Method for preparing aqueous phytosphingosine solution
    • 水溶性鞘氨醇溶液的制备方法
    • US06403111B1
    • 2002-06-11
    • US09691469
    • 2000-10-18
    • Chang Seo ParkJin Wook KimJee Hean Jeong
    • Chang Seo ParkJin Wook KimJee Hean Jeong
    • A61K3578
    • A61K8/97A61K8/68A61Q19/00Y10S514/844
    • Disclosed is a method for preparing an aqueous phytosphingosine solution containing as much as 5-10 weight % of phytosphingosine without using any solvents other than water. A high content of phytosphingosine is dissolved in water and lactic acid with the help of a willow bark extract. In addition to being clear, the aqueous phytosphingosine solution is able to recover damaged skin with activity against bacteria and inflammation. Also, when being applied for cosmetics, the aqueous phytosphingosine solution allows them to contain as much as 1-2 weight % of phytosphingosine by virtue of its high content of phytosphingosine. Further, the phytosphingosine solution is greatly improved in compatibility with cosmetic components so that it can be readily applied for aqueous cosmetics such as skin lotions, essence lotions, aqueous pack products, body essence compositions, etc., for which phytosphingosine has not yet been applied, thus far. Thus, the phytosphingosine solution of the present invention gives a great contribution to the functional improvement of aqueous cosmetics.
    • 公开了一种在不使用水以外的任何溶剂的情况下制备含有多达5-10重量%的植物鞘氨醇的水溶性植物鞘氨醇溶液的方法。 借助柳树皮提取物,将高含量的植物鞘氨醇溶于水和乳酸。 除了清楚,植物水溶液能够恢复损伤的皮肤,具有抵抗细菌和炎症的活性。 另外,当用于化妆品时,由于植物鞘氨醇含量高,植物水溶液使得它们能含有1-2重量%的植物鞘氨醇。 此外,植物鞘氨醇溶液与化妆品组分的相容性大大提高,因此其可以容易地用于尚未应用植物鞘氨醇的水性化妆品如皮肤洗剂,精华液,水性包装产品,身体精华组合物等 , 迄今。 因此,本发明的植物鞘氨醇溶液对水性化妆品的功能改善有很大的贡献。