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31. 发明申请

US20180233367A1 WAFER COOLING METHOD 审中-公开
公开(公告)号：US20180233367A1
公开(公告)日：2018-08-16
申请号：US15951495
申请日：2018-04-12
申请人： Axcelis Technologies, Inc.
发明人： Marvin Farley , Mike Ameen , Causon Ko-Chuan Jen
IPC分类号： H01L21/265 , H01J37/20 , C23C14/54 , H01L21/67 , C23C14/48 , H01L21/677 , H01J37/317
CPC分类号： H01L21/26513 , C23C14/48 , C23C14/541 , H01J37/20 , H01J37/3171 , H01J2237/2001 , H01J2237/31701 , H01L21/67103 , H01L21/67109 , H01L21/67115 , H01L21/67213 , H01L21/67742
摘要： An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

32. 发明授权

US10037877B1 Ion implantation system having beam angle control in drift and deceleration modes 有权
公开(公告)号：US10037877B1
公开(公告)日：2018-07-31
申请号：US15637538
申请日：2017-06-29
申请人： Axcelis Technologies, Inc.
发明人： Bo H. Vanderberg , Edward C. Eisner
IPC分类号： A61N5/00 , H01J49/20 , H01J49/12 , H01J49/06
CPC分类号： H01J49/20 , H01J37/05 , H01J37/244 , H01J37/3171 , H01J49/061 , H01J49/126 , H01J49/30 , H01J2237/15
摘要： An ion implantation system has an ion source forming an ion beam. An mass analyzer defines and varies a mass analyzed beam along a beam path. A moveable mass resolving aperture assembly has a resolving aperture whose position is selectively varied in response to the variation of the beam path by the mass analyzer. A deflecting deceleration element positioned selectively deflects the beam path and selectively decelerate the mass analyzed beam. A controller selectively operates the ion implantation system in both a drift mode and decel mode. The controller passes the mass analyzed beam along a first path through the resolving aperture without deflection or deceleration in the drift mode and deflects and decelerates the beam along a second path in the decel mode. The position of the resolving aperture is selectively varied based on the variation in the beam path through the mass analyzer and the deflecting deceleration element.

33. 发明申请

US20180151407A1 SYSTEM FOR SEMICONDUCTOR WAFER RETENTION AND SENSING IN A VACUUM LOAD LOCK 审中-公开
公开(公告)号：US20180151407A1
公开(公告)日：2018-05-31
申请号：US15361813
申请日：2016-11-28
申请人： Axcelis Technologies, Inc.
发明人： Stanley W. Stone
IPC分类号： H01L21/687 , H05B3/00 , H01L21/67
CPC分类号： H01L21/67115 , H01L21/67259 , H01L21/68728
摘要： A workpiece clamp has a base with first and second sides with a cam ring rotatably coupled to the first side. The cam ring has plurality of cam slots. An actuator selectively rotates the cam ring with respect to the base. A plurality of rotary clamps, have respective shafts, cam followers assemblies, and workpiece engagement members, where the shaft extends through the base from the first to second side and rotate about an axis. The shaft has individually rotatable first and second members. The cam follower assemblies couple first and second portions of the shaft, where a cam follower is radially offset from the shaft axis and configured to engage a respective cam slot. The workpiece engagement member has a gripper member that is radially offset from the shaft axis and is configured to engage a workpiece based on a position of the cam follower in the respective cam slots. Sensors are positioned on the first side of the base, wherein each sensor detects a rotational position of the first and second members, thus determining a clamping state of each rotary clamp.

34. 发明授权

US09978555B2 Ion source liner having a lip for ion implantation systems 有权
公开(公告)号：US09978555B2
公开(公告)日：2018-05-22
申请号：US15344502
申请日：2016-11-04
申请人： Axcelis Technologies, Inc.
发明人： Neil K. Colvin , Tseh-Jen Hsieh
IPC分类号： H01J37/08 , H01J37/317 , H01J27/02
CPC分类号： H01J37/08 , H01J27/022 , H01J37/3171 , H01J2237/31705
摘要： An ion source has an arc chamber having a body defining and interior region. A liner defined an exposure surface of the interior region that is exposed to a plasma generated within the arc chamber. An electrode has a shaft with a first diameter that passes through the body and the liner. The electrode is electrically isolated from the body where the liner is a plate having a first surface with an optional recess having a second surface. A hole is defined through the recess for the shaft to pass through. The hole has a second diameter that is larger than the first diameter, and an annular gap exists between the plate and the shaft. The plate has a lip extending from the second surface toward the first surface that surrounds the hole within the recess and generally prevents particulate contaminants from entering the annular gap.

35. 发明申请

US20180096828A1 IN-SITU CLEANING USING HYDROGEN PEROXIDE AS CO-GAS TO PRIMARY DOPANT OR PURGE GAS FOR MINIMIZING CARBON DEPOSITS IN AN ION SOURCE 审中-公开
公开(公告)号：US20180096828A1
公开(公告)日：2018-04-05
申请号：US15281844
申请日：2016-09-30
申请人： Axcelis Technologies, Inc.
发明人： Neil K. Colvin , Tseh-Jen Hsieh
IPC分类号： H01J37/32 , H01J37/317 , C23C14/48
CPC分类号： H01J37/32862 , C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022 , H01J2237/08 , H01J2237/18 , H01J2237/31705
摘要： An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas such as toluene to the ion source chamber. A source gas flow controller controls a flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas, forming carbon ions and atomic carbon. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. A hydrogen peroxide co-gas supply provides a predetermined concentration of hydrogen peroxide co-gas to the ion source chamber, and a hydrogen peroxide co-gas flow controller controls a flow of the hydrogen peroxide gas to the ion source chamber. The hydrogen peroxide co-gas decomposes within the ion source chamber and reacts with the atomic carbon from the molecular carbon source gas in the ion source chamber, forming hydrocarbons within the ion source chamber. An inert gas is further introduced and ionized to counteract oxidation of a cathode due to the decomposition of the hydrogen peroxide. A vacuum pump system removes the hydrocarbons from the ion source chamber, wherein deposition of atomic carbon within the ion source chamber is reduced and a lifetime of the ion source chamber is increased.

36. 发明授权

US09847240B2 Constant mass flow multi-level coolant path electrostatic chuck 有权
公开(公告)号：US09847240B2
公开(公告)日：2017-12-19
申请号：US14178795
申请日：2014-02-12
申请人： Axcelis Technologies, Inc.
发明人： William Davis Lee
IPC分类号： F28F7/00 , H01L21/67 , H01L21/683 , H01L23/46 , F28D1/06 , H01L23/40 , F28D21/00
CPC分类号： H01L21/67109 , F28D1/06 , F28D2021/0029 , H01L21/6831 , H01L23/40 , H01L23/46
摘要： A workpiece support has a vessel having a top interior wall and a bottom interior wall. An interior cavity is defined between the top interior wall and bottom interior wall, wherein a support surface configured to support a workpiece. A plate is positioned within the interior cavity, dividing the interior cavity into a top cavity and a bottom cavity. The top and bottom cavities are fluidly coupled about a periphery of the plate. A first taper defined in one or more of the top interior wall and a top portion of the plate provides a substantially constant volume across a radial cross-section of the top cavity. A second taper defined in one or more of the bottom interior wall and a bottom portion of the plate provides a substantially constant volume across a radial cross-section of the bottom cavity. First and second ports fluidly couple the top and bottom cavities to respective first and second fluid channels.

37. 发明申请

US20170330725A1 LANTHANATED TUNGSTEN ION SOURCE AND BEAMLINE COMPONENTS 审中-公开
公开(公告)号：US20170330725A1
公开(公告)日：2017-11-16
申请号：US15592857
申请日：2017-05-11
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： NEIL K. COLVIN , TSEH-JEN HSIEH , PAUL B. SILVERSTEIN
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： H01J37/3002 , H01J37/08 , H01J37/3171 , H01J2237/061
摘要： An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. The conductive component may be a component of an ion source, such as one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. The aperture plate may be associated with one or more of an extraction aperture, a suppression aperture and a ground aperture.

38. 发明申请

US20170133193A1 ION SOURCE LINER HAVING A LIP FOR ION IMPLANTATION SYSTEMS 有权
公开(公告)号：US20170133193A1
公开(公告)日：2017-05-11
申请号：US15344502
申请日：2016-11-04
申请人： Axcelis Technologies, Inc.
发明人： Neil K. Colvin , Tseh-Jen Hsieh
IPC分类号： H01J37/08 , H01J37/317
CPC分类号： H01J37/08 , H01J27/022 , H01J37/3171 , H01J2237/31705
摘要： An ion source has an arc chamber having a body defining and interior region. A liner defined an exposure surface of the interior region that is exposed to a plasma generated within the arc chamber. An electrode has a shaft with a first diameter that passes through the body and the liner. The electrode is electrically isolated from the body where the liner is a plate having a first surface with an optional recess having a second surface. A hole is defined through the recess for the shaft to pass through. The hole has a second diameter that is larger than the first diameter, and an annular gap exists between the plate and the shaft. The plate has a lip extending from the second surface toward the first surface that surrounds the hole within the recess and generally prevents particulate contaminants from entering the annular gap.

39. 发明授权

US09558914B2 Bipolar wafer charge monitor system and ion implantation system comprising same 有权
标题翻译：双极晶片电荷监测系统和包括其的离子注入系统
公开(公告)号：US09558914B2
公开(公告)日：2017-01-31
申请号：US14631066
申请日：2015-02-25
申请人： Axcelis Technologies, Inc.
发明人： Marvin Farley , Takao Sakase , Joseph Foley
IPC分类号： H01J37/08 , H01J37/304 , H01J37/317 , H01J37/32
CPC分类号： H01J37/304 , H01J37/3171 , H01J37/32412 , H01J2237/0041 , H01J2237/0203 , H01J2237/24507 , H01J2237/304 , H01J2237/31701 , H01L22/14
摘要： A charge monitor having a Langmuir probe is provided, wherein a positive and negative charge rectifier are operably coupled to the probe and configured to pass only a positive and negative charges therethrough, respectively. A positive current integrator is operably coupled to the positive charge rectifier, wherein the positive current integrator is biased via a positive threshold voltage, and wherein the positive current integrator is configured to output a positive dosage based, at least in part, on the positive threshold voltage. A negative current integrator is operably coupled to the negative charge rectifier, wherein the negative current integrator is biased via a negative threshold voltage, and wherein the negative current integrator is configured to output a negative dosage based, at least in part, on the negative threshold voltage. A positive charge counter and a negative charge counter are configured to respectively receive the output from the positive current integrator and negative current integrator in order to provide a respective cumulative positive charge value and cumulative negative charge value associated with the respective positive charge and negative charge.
摘要翻译：提供具有朗缪尔探针的电荷监测器，其中正和负电荷整流器可操作地耦合到探针并且被配置为分别仅通过正和负电荷。正电流积分器可操作地耦合到正电荷整流器，其中正电流积分器经由正阈值电压偏置，并且其中正电流积分器被配置为至少部分地基于正阈值输出正剂量电压。负电流积分器可操作地耦合到负电荷整流器，其中负电流积分器经由负阈值电压被偏置，并且其中负电流积分器被配置为基于至少部分地基于负阈值输出负剂量电压。配置正电荷计数器和负电荷计数器以分别接收来自正电流积分器和负电流积分器的输出，以便提供与相应的正电荷和负电荷相关联的相应的累积正电荷值和累积负电荷值。

40. 发明授权

US09490185B2 Implant-induced damage control in ion implantation 有权
标题翻译：植入物诱导的离子注入损伤控制
公开(公告)号：US09490185B2
公开(公告)日：2016-11-08
申请号：US14013728
申请日：2013-08-29
申请人： Axcelis Technologies, Inc.
发明人： Ronald N. Reece , Shu Satoh , Serguei Kondratenko , Andy Ray
IPC分类号： H01L21/66 , C23C14/48 , H01J37/304 , H01J37/317
CPC分类号： H01L22/26 , C23C14/48 , H01J37/304 , H01J37/3171 , H01J2237/30455 , H01J2237/30472 , H01J2237/31703 , H01L2924/0002 , H01L2924/00
摘要： An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.
摘要翻译：提供了离子注入系统，其具有被配置为向工件提供具有束密度的点离子束的离子注入装置，其中工件具有与其相关联的晶体结构。扫描系统沿着一个或多个轴线相对于彼此迭代扫描一个或多个点离子束和工件。还提供控制器并构造成当工件上的预定位置暴露于点离子束时，建立工件的预定局部温度。因此，在预定位置处实现了工件的晶体结构的预定的局部混乱，其中控制器被配置为控制点离子束的束密度中的一个或多个以及与扫描系统相关联的占空比，以建立工件在工件上预定位置的局部温度。

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