专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09490185B2 Implant-induced damage control in ion implantation 有权
标题翻译：植入物诱导的离子注入损伤控制
公开(公告)号：US09490185B2
公开(公告)日：2016-11-08
申请号：US14013728
申请日：2013-08-29
申请人： Axcelis Technologies, Inc.
发明人： Ronald N. Reece , Shu Satoh , Serguei Kondratenko , Andy Ray
IPC分类号： H01L21/66 , C23C14/48 , H01J37/304 , H01J37/317
CPC分类号： H01L22/26 , C23C14/48 , H01J37/304 , H01J37/3171 , H01J2237/30455 , H01J2237/30472 , H01J2237/31703 , H01L2924/0002 , H01L2924/00
摘要： An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.
摘要翻译：提供了离子注入系统，其具有被配置为向工件提供具有束密度的点离子束的离子注入装置，其中工件具有与其相关联的晶体结构。扫描系统沿着一个或多个轴线相对于彼此迭代扫描一个或多个点离子束和工件。还提供控制器并构造成当工件上的预定位置暴露于点离子束时，建立工件的预定局部温度。因此，在预定位置处实现了工件的晶体结构的预定的局部混乱，其中控制器被配置为控制点离子束的束密度中的一个或多个以及与扫描系统相关联的占空比，以建立工件在工件上预定位置的局部温度。

2. 发明授权

US10903097B2 In-situ wafer temperature measurement and control 有权
公开(公告)号：US10903097B2
公开(公告)日：2021-01-26
申请号：US16367948
申请日：2019-03-28
申请人： Axcelis Technologies, Inc.
发明人： John F. Baggett , Ronald N. Reece , Petros Miltiades Kopalidis
IPC分类号： H01L21/67 , H01J37/20 , H01J37/317 , H01L21/683 , H01L21/687 , G01K13/00
摘要： A thermal chuck selectively retains a workpiece on a clamping surface. The thermal chuck has one or more heaters to selectively heat the clamping surface and the workpiece. A thermal monitoring device determines a temperature of a surface of the workpiece when the workpiece resides on the clamping surface, defining one or more measured temperatures. A controller selectively energizes the one or more heaters based on the one or more measured temperatures. The thermal monitoring device may be one or more of a thermocouple or RTD in selective contact with the surface of the workpiece and an emissivity sensor or pyrometer not in contact with the surface. The thermal chuck can be part of an ion implantation system configured to implant ions into the workpiece. The controller can be further configured to control the heaters based on the measured temperatures.

3. 发明申请

US20190304820A1 IN-SITU WAFER TEMPERATURE MEASUREMENT AND CONTROL 审中-公开
公开(公告)号：US20190304820A1
公开(公告)日：2019-10-03
申请号：US16367948
申请日：2019-03-28
申请人： Axcelis Technologies, Inc.
发明人： John F. Baggett , Ronald N. Reece , Petros Miltiades Kopalidis
IPC分类号： H01L21/67 , H01L21/683 , H01L21/687 , H01J37/317 , H01J37/20
摘要： A thermal chuck selectively retains a workpiece on a clamping surface. The thermal chuck has one or more heaters to selectively heat the clamping surface and the workpiece. A thermal monitoring device determines a temperature of a surface of the workpiece when the workpiece resides on the clamping surface, defining one or more measured temperatures. A controller selectively energizes the one or more heaters based on the one or more measured temperatures. The thermal monitoring device may be one or more of a thermocouple or RTD in selective contact with the surface of the workpiece and an emissivity sensor or pyrometer not in contact with the surface. The thermal chuck can be part of an ion implantation system configured to implant ions into the workpiece. The controller can be further configured to control the heaters based on the measured temperatures.

4. 发明申请

US20140065730A1 IMPLANT-INDUCED DAMAGE CONTROL IN ION IMPLANTATION 有权
标题翻译：植入物中的植入物诱导的损伤控制
公开(公告)号：US20140065730A1
公开(公告)日：2014-03-06
申请号：US14013728
申请日：2013-08-29
申请人： Axcelis Technologies, Inc.
发明人： Ronald N. Reece , Shu Satoh , Serguei Kondratenko , Andy Ray
IPC分类号： H01L21/66 , C23C14/48
CPC分类号： H01L22/26 , C23C14/48 , H01J37/304 , H01J37/3171 , H01J2237/30455 , H01J2237/30472 , H01J2237/31703 , H01L2924/0002 , H01L2924/00
摘要： An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.
摘要翻译：提供了离子注入系统，其具有被配置为向工件提供具有束密度的点离子束的离子注入装置，其中工件具有与其相关联的晶体结构。扫描系统沿着一个或多个轴线相对于彼此迭代扫描一个或多个点离子束和工件。还提供控制器并构造成当工件上的预定位置暴露于点离子束时，建立工件的预定局部温度。因此，在预定位置处实现了工件的晶体结构的预定的局部混乱，其中控制器被配置为控制点离子束的束密度中的一个或多个以及与扫描系统相关联的占空比，以建立工件在工件上预定位置的局部温度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式