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21. 发明授权

US06608790B2 Write current compensation for temperature variations in memory arrays 有权
公开(公告)号：US06608790B2
公开(公告)日：2003-08-19
申请号：US09998216
申请日：2001-12-03
申请人： Lung T. Tran , Manoj K. Bhattacharyya
发明人： Lung T. Tran , Manoj K. Bhattacharyya
IPC分类号： G11C704
CPC分类号： G11C11/16
摘要： A memory device includes a memory array having a substrate, an array of memory cells disposed over the substrate, row conductors coupled to the memory cells, and column conductors coupled to the memory cells. The memory device also includes current sources that generate variable write currents in response to temperature changes in the memory array. The variable write currents are generated to accommodate the change in coercivities of the memory cells as the temperature of the array changes. A current source can include a temperature sensor that provides a continuous, immediate output to the current sensor to ensure accurate adjustment of a write current generated by the current source. There is no need to halt operation of the memory device to calibrate the current source. In addition, the current source provides an accurate adjustment to the write current because the temperature used by the temperature sensor to generate the output may be taken contemporaneously with generation of the write current.

22. 发明授权

US06577549B1 Write current compensation for temperature variations in memory arrays 有权
标题翻译：为存储器阵列中的温度变化写入电流补偿
公开(公告)号：US06577549B1
公开(公告)日：2003-06-10
申请号：US10254559
申请日：2002-09-25
申请人： Lung T. Tran , Manoj K. Bhattacharyya
发明人： Lung T. Tran , Manoj K. Bhattacharyya
IPC分类号： G11C704
CPC分类号： G11C11/16
摘要： A memory device includes a memory array having a substrate, an array of memory cells disposed over the substrate, row conductors coupled to the memory cells, and column conductors coupled to the memory cells. The memory device also includes current sources that generate variable write currents in response to temperature changes in the memory array. The variable write currents are generated to accommodate the change in coercivities of the memory cells as the temperature of the array changes. A current source can include a temperature sensor that provides a continuous, immediate output to the current sensor to ensure accurate adjustment of a write current generated by the current source. There is no need to halt operation of the memory device to calibrate the current source. In addition, the current source provides an accurate adjustment to the write current because the temperature used by the temperature sensor to generate the output may be taken contemporaneously with generation of the write current.
摘要翻译：存储器件包括具有衬底的存储器阵列，设置在衬底上的存储器单元阵列，耦合到存储器单元的行导体和耦合到存储器单元的列导体。存储器件还包括响应于存储器阵列中的温度变化产生可变写入电流的电流源。随着阵列温度的变化，产生可变写入电流以适应存储器单元的矫顽力变化。电流源可以包括温度传感器，其向电流传感器提供连续的即时输出，以确保精确地调整由电流源产生的写入电流。不需要停止存储器件的操作来校准电流源。此外，电流源提供对写入电流的精确调整，因为温度传感器用于产生输出的温度可以同时产生写入电流。

23. 发明授权

US06552945B2 METHOD FOR STORING A TEMPERATURE THRESHOLD IN AN INTEGRATED CIRCUIT, METHOD FOR STORING A TEMPERATURE THRESHOLD IN A DYNAMIC RANDOM ACCESS MEMORY, METHOD OF MODIFYING DYNAMIC RANDOM ACCESS MEMORY OPERATION IN RESPONSE TO TEMPERATURE, PROGRAMMABLE TEMPERATURE SENSING CIRCUIT AND MEMORY INTEGRATED CIRCUIT 有权
标题翻译：用于在一体化电路中存储温度阈值的方法，用于在动态随机存取存储器中存储温度阈值的方法，在温度，可编程温度感测电路和存储器集成电路中修改动态随机存取存储器操作的方法
公开(公告)号：US06552945B2
公开(公告)日：2003-04-22
申请号：US09768897
申请日：2001-01-23
申请人： Christopher B. Cooper , Ming-Bo Liu , Chris G. Martin , Troy A. Manning , Stephen L. Casper , Charles H. Dennison , Brian M. Shirley , Brian L. Brown , Shubneesh Batra
发明人： Christopher B. Cooper , Ming-Bo Liu , Chris G. Martin , Troy A. Manning , Stephen L. Casper , Charles H. Dennison , Brian M. Shirley , Brian L. Brown , Shubneesh Batra
IPC分类号： G11C704
CPC分类号： G11C7/04 , G11C7/1045 , G11C7/20 , G11C11/4072 , G11C11/4078
摘要： A method for storing a temperature threshold in an integrated circuit includes measuring operating parameters of the integrated circuit versus temperature, calculating a maximum temperature at which the integrated circuit performance exceeds predetermined specifications and storing parameters corresponding to the maximum temperature in a comparison circuit in the integrated circuit by selectively blowing fusable devices in the comparison circuit. The fusable devices may be antifuses. As a result, the integrated circuit is able to provide signals to devices external to the integrated circuit to indicate that the integrated circuit may be too hot to operate properly.
摘要翻译：一种用于在集成电路中存储温度阈值的方法包括：测量集成电路的相对于温度的操作参数，计算集成电路性能超过预定规格的最大温度，并将积分电路性能中最大温度的参数存储在集成电路中的比较电路中通过在比较电路中选择性地吹入可熔设备。可熔断器件可以是反熔丝。因此，集成电路能够向集成电路外部的设备提供信号，以指示集成电路可能太热而无法正常工作。

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