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    • 28. 发明申请
    • OFFSET PRINTING FOR HIGH-SPEED CORRUGATION APPLICATIONS
    • 用于高速校正应用的偏移打印
    • US20150101740A1
    • 2015-04-16
    • US14055556
    • 2013-10-16
    • COLOR-BOX, LLC
    • Sergio Morales Garcia de la VegaAlex Norman Green
    • B31D1/00B31F1/00
    • B31D99/00B31D2201/00B31F1/28B31F1/2822B31F1/285Y10T156/1049Y10T156/1052Y10T428/24562
    • The present application provides systems, apparatus, and methods for providing high quality printed corrugated boxes through the use of a variable sleeve offset press. In one embodiment a method is provided comprising the steps of: printing a linerboard web to provide ink to the linerboard web. The printing step may comprise using an offset printing press having variable repeat length. The method may further comprise rewinding the printed linerboard web onto a roll; providing the printed linerboard web to a high speed corrugation machine via the roll; laminating the printed linerboard web to a fluted medium web thereby producing a printed corrugated web. The method may further comprise applying heat to at least one of the printed linerboard web and the fluted medium which causes heating of the ink on the linerboard web printed thereon by the offset printed press.
    • 本申请提供了通过使用可变套筒胶印机提供高质量印刷瓦楞纸箱的系统,设备和方法。 在一个实施例中,提供了一种方法,包括以下步骤:打印衬板纸幅以向纸板纸幅提供油墨。 印刷步骤可以包括使用具有可变重复长度的胶版印刷机。 该方法可以进一步包括将印刷的纸板网重绕到卷筒上; 通过该卷将印刷的纸板幅材提供给高速波纹机; 将印刷的纸板幅材层压到带槽的介质纤维网上,从而产生印刷的波纹状网状物。 该方法可以进一步包括将热量施加到印刷的衬垫纸幅和槽纹介质中的至少一个,这导致通过胶版印刷机在印刷在其上的衬纸幅上加热油墨。
    • 30. 发明授权
    • Light emitting diode
    • 发光二极管
    • US08952411B2
    • 2015-02-10
    • US14080805
    • 2013-11-15
    • Industrial Technology Research Institute
    • Yi-Keng FuRong XuanHsun-Chih Liu
    • H01L33/00H01L33/12H01L33/20
    • H01L33/642H01L33/002H01L33/007H01L33/025H01L33/04H01L33/06H01L33/12H01L33/20H01L33/22Y10T428/24562
    • A light emitting diode device may include a carrier, a p-type and n-type semiconductor layers, an active layer, a first electrode and a second electrode is provided. The carrier has a growth surface and at least one nano-patterned structure on the growth surface, in which the carrier includes a substrate and a semiconductor capping layer disposed between the substrate and the n-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer are located over the growth surface of the carrier. The active layer is located between the n-type and p-type semiconductor layers, in which a wavelength λ of light emitted by the active layer is 222 nm≦λ≦405 nm, and a defect density of the active layer is less than or equal to 5×1010/cm2. The first and second electrodes are respectively connected to the n-type and p-type semiconductor layers. A carrier for carrying a semiconductor layer is also provided.
    • 发光二极管器件可以包括载体,p型和n型半导体层,有源层,第一电极和第二电极。 载体在生长表面上具有生长表面和至少一个纳米图案结构,其中载体包括衬底和设置在衬底和n型半导体层之间的半导体覆盖层。 n型半导体层和p型半导体层位于载体的生长表面上。 有源层位于n型和p型半导体层之间,其中由有源层发射的光的波长λ为222nm< lE;λ≦̸ 405nm,并且有源层的缺陷密度小于或等于 等于5×10 10 / cm 2。 第一电极和第二电极分别连接到n型和p型半导体层。 还提供了用于承载半导体层的载体。