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21. 发明申请

US20100322557A1 OPTICAL DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光学装置及其制造方法
公开(公告)号：US20100322557A1
公开(公告)日：2010-12-23
申请号：US12868163
申请日：2010-08-25
申请人： Manabu Matsuda , Tsuyoshi Yamamoto
发明人： Manabu Matsuda , Tsuyoshi Yamamoto
IPC分类号： G02B6/34 , B29D11/00
CPC分类号： H01S5/1228 , B82Y20/00 , H01S5/0654 , H01S5/1215 , H01S5/124 , H01S5/2209 , H01S5/2275 , H01S5/32333 , H01S5/3403 , H01S5/3434
摘要： An optical device including: an optical waveguide; and a plurality of diffraction grating layers provided along the optical waveguide, wherein each of the diffraction grating layers comprises a diffraction grating, each diffraction grating comprising a discontinuous first semiconductor layer and a second semiconductor layer burying the first semiconductor layer, the first and second semiconductor layers having different refractive indices, the plurality of diffraction grating layers comprise at least two diffraction grating layers being different from each other in terms of the length of a region where the diffraction grating is provided, and the diffraction gratings in an overlap region of the plurality of diffraction grating layers have the same phase and period is provided.
摘要翻译：一种光学装置，包括：光波导; 以及沿着光波导设置的多个衍射光栅层，其中每个衍射光栅层包括衍射光栅，每个衍射光栅包括不连续的第一半导体层和埋入第一半导体层的第二半导体层，第一和第二半导体具有不同折射率的层，多个衍射光栅层包括至少两个衍射光栅层相对于设置有衍射光栅的区域的长度而彼此不同，并且多个衍射光栅层的重叠区域中的衍射光栅的衍射光栅层具有相同的相位和周期。

22. 发明申请

US20100260225A1 SEMICONDUCTOR LASER 失效
标题翻译：半导体激光器
公开(公告)号：US20100260225A1
公开(公告)日：2010-10-14
申请号：US12823172
申请日：2010-06-25
申请人： Kazuhisa Takagi
发明人： Kazuhisa Takagi
IPC分类号： H01S5/026
CPC分类号： H01S5/12 , H01S5/1064 , H01S5/1225 , H01S5/124 , H01S5/20 , H01S5/22
摘要： A semiconductor laser comprises: a substrate; an n-cladding layer disposed on the substrate; an active layer disposed on the n-cladding layer; a p-cladding layer disposed on the active layer and forming a waveguide ridge; and a diffraction grating layer disposed between the active layer and the n-cladding layer or the p-cladding layer and including a phase shift structure in a part of the diffraction grating layer in an optical waveguide direction. The width of the p-cladding layer is increased in a portion corresponding to the phase shift structure of the diffraction grating layer.
摘要翻译：半导体激光器包括：基板; 设置在所述基板上的n包层; 设置在n包层上的有源层; p层，设置在有源层上并形成波导脊; 以及设置在有源层和n包层或p包层之间的衍射光栅层，并且在衍射光栅层的一部分中在光波导方向上包括相移结构。 p型覆层的宽度在与衍射光栅层的相移结构对应的部分增加。

23. 发明授权

US07738520B2 Optical semiconductor device and optical semiconductor integrated circuit 有权
标题翻译：光半导体器件和光半导体集成电路
公开(公告)号：US07738520B2
公开(公告)日：2010-06-15
申请号：US10527355
申请日：2004-03-30
申请人： Nobuhiro Nunoya , Yasuo Shibata , Naoki Fujiwara , Nobuhiro Kikuchi , Yuichi Tomori
发明人： Nobuhiro Nunoya , Yasuo Shibata , Naoki Fujiwara , Nobuhiro Kikuchi , Yuichi Tomori
IPC分类号： H01S3/04
CPC分类号： G02B6/12007 , G02B6/122 , G02B6/131 , G02B6/136 , G02B6/4202 , H01S5/026 , H01S5/06206 , H01S5/06256 , H01S5/0654 , H01S5/068 , H01S5/101 , H01S5/1017 , H01S5/1025 , H01S5/1085 , H01S5/1215 , H01S5/1221 , H01S5/124 , H01S5/125 , H01S5/2205 , H01S5/227 , H01S2301/173
摘要： An optical semiconductor device and optical semiconductor integrated circuit are provided by combining, on a semiconductor substrate, materials having different refractive indices and different temperature dependence of the refractive indices. In particular, it becomes possible to control the temperature dependence of the oscillation wavelength with a propagating region having a material and/or structure whose temperature dependence of the refractive index is different from that of a gain region of the semiconductor laser. In addition, they can be configured to have a plurality of interfaces formed along the waveguide direction of the optical waveguide so that the light reflected off the first interface is weakened by the light reflected from the remaining interfaces. Also, they can be configured with the interfaces inclined to the propagating direction so that the waveguide loss due to the reflection and refraction between the optical waveguides whose refractive indices differ from each other can be reduced.
摘要翻译：通过在半导体衬底上组合具有不同折射率和不同的折射率温度依赖性的材料来提供光学半导体器件和光学半导体集成电路。特别地，可以通过具有折射率的温度依赖性与半导体激光器的增益区域的温度依赖性的材料和/或结构的传播区域来控制振荡波长的温度依赖性。此外，它们可以被配置为具有沿着光波导的波导方向形成的多个界面，使得从第一界面反射的光被从其余界面反射的光减弱。此外，它们可以被配置为具有相对于传播方向倾斜的界面，使得可以减少由于折射率彼此不同的光波导之间的反射和折射引起的波导损耗。

24. 发明授权

US07471864B2 Optical semiconductor device and optical semiconductor integrated circuit 有权
标题翻译：光半导体器件和光半导体集成电路
公开(公告)号：US07471864B2
公开(公告)日：2008-12-30
申请号：US11755688
申请日：2007-05-30
申请人： Nobuhiro Nunoya , Yasuo Shibata , Naoki Fujiwara , Nobuhiro Kikuchi , Yuichi Tomori
发明人： Nobuhiro Nunoya , Yasuo Shibata , Naoki Fujiwara , Nobuhiro Kikuchi , Yuichi Tomori
IPC分类号： G02B6/10 , G02B6/12
CPC分类号： G02B6/12007 , G02B6/122 , G02B6/131 , G02B6/136 , G02B6/4202 , H01S5/026 , H01S5/06206 , H01S5/06256 , H01S5/0654 , H01S5/068 , H01S5/101 , H01S5/1017 , H01S5/1025 , H01S5/1085 , H01S5/1215 , H01S5/1221 , H01S5/124 , H01S5/125 , H01S5/2205 , H01S5/227 , H01S2301/173
摘要： An integrated optical waveguide has first, second, and third optical waveguiding regions. The second optical waveguiding region has a refractive index different from that of the first optical waveguiding region. The second optical waveguiding region has an interface surface with the first optical waveguiding region that is inclined with respect to the waveguide direction of the first optical waveguiding region. The third optical waveguiding region has an interface surface with the second optical waveguiding region that is disposed such that a refraction direction through the interface surface is in line with the waveguide direction.
摘要翻译：集成光波导具有第一，第二和第三光波导区域。第二光波导区域具有与第一光波导区域不同的折射率。第二光波导区域具有与第一光波导区域相对于第一光波导区域的波导方向倾斜的界面。第三光波导区域具有与第二光波导区域的界面，该第二光波导区域被布置成使得通过界面表面的折射方向与波导方向成一直线。

25. 发明授权

US07366220B2 Tunable laser 有权
标题翻译：可调谐激光
公开(公告)号：US07366220B2
公开(公告)日：2008-04-29
申请号：US11235250
申请日：2005-09-27
申请人： Kazumasa Takabayashi
发明人： Kazumasa Takabayashi
IPC分类号： H01S3/08
CPC分类号： H01S5/12 , H01S5/0425 , H01S5/06256 , H01S5/06258 , H01S5/1218 , H01S5/1221 , H01S5/124 , H01S5/125 , H01S5/4012 , H01S5/4087
摘要： A tunable laser includes an optical waveguide alternately including a gain waveguide portion and a wavelength controlling waveguide portion, and a diffraction grating. The diffraction grating includes a gain diffraction grating and a wavelength controlling diffraction grating. A wavelength controlling region is configured such that the wavelength controlling waveguide portion and the wavelength controlling diffraction grating are included therein. A gain region is configured such that the gain waveguide portion and the gain diffraction grating are included therein. The Bragg wavelength of the wavelength controlling region is longer than that of the gain region in a state in which current injection or voltage application is not performed for the wavelength controlling waveguide portion.
摘要翻译：可调谐激光器包括交替地包括增益波导部分和波长控制波导部分的光波导和衍射光栅。衍射光栅包括增益衍射光栅和波长控制衍射光栅。波长控制区域被配置为使得波长控制波导部分和波长控制衍射光栅包括在其中。增益区域被配置为使得增益波导部分和增益衍射光栅包括在其中。在不对波长控制波导部分进行电流注入或施加电压的状态下，波长控制区域的布拉格波长比增益区域的布拉格波长长。

26. 发明授权

US07359423B2 Distributed feedback laser diode 失效
标题翻译：分布式反馈激光二极管
公开(公告)号：US07359423B2
公开(公告)日：2008-04-15
申请号：US11041721
申请日：2005-01-25
申请人： Yuichiro Okunuki
发明人： Yuichiro Okunuki
IPC分类号： H01S3/08
CPC分类号： H01S5/1228 , H01S5/124
摘要： A semiconductor laser includes an active layer on an n-type InP substrate. A diffraction grating and a p-type InP cladding layer are above the active layer. The diffraction grating has at least one phase shift portion. Facets of the distributed feedback laser each have thereon an antireflective film having a reflectance of 3% or less. The diffraction grating does not extend into end regions of the distributed feedback laser, each end region extending 1 μm-20 μm from a respective one of the facets toward an opposite end in a waveguide direction.
摘要翻译：半导体激光器包括n型InP衬底上的有源层。衍射光栅和p型InP包覆层在有源层之上。衍射光栅具有至少一个相移部分。分布式反馈激光器的各个面都具有反射率为3％以下的抗反射膜。衍射光栅不延伸到分布式反馈激光器的端部区域，每个端部区域从相应的一个面朝向波导方向的相对端延伸1mum-20mum。

27. 发明申请

US20080084906A1 SEMICONDUCTOR OPTICAL ELEMENT AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体光学元件及其制造方法
公开(公告)号：US20080084906A1
公开(公告)日：2008-04-10
申请号：US11626507
申请日：2007-01-24
申请人： Kazuhisa Takagi
发明人： Kazuhisa Takagi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1053 , H01S5/1057 , H01S5/124 , H01S5/2222 , H01S5/227 , H01S5/3412 , H01S5/509
摘要： A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.
摘要翻译：半导体光学元件具有包括量子点的有源层。光子密度相对较高的有源层部分中的谐振器方向的量子点的密度相对于有源层的一部分中的光子的密度相对较低的部分的量子点的密度而增加。

28. 发明申请

US20070223857A1 OPTICAL SEMICONDUCTOR DEVICE AND OPTICAL SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：光学半导体器件和光学半导体集成电路
公开(公告)号：US20070223857A1
公开(公告)日：2007-09-27
申请号：US11755688
申请日：2007-05-30
申请人： Nobuhiro Nunoya , Yasuo Shibata , Naoki Fujiwara , Nobuhiro Kikuchi , Yuichi Tomori
发明人： Nobuhiro Nunoya , Yasuo Shibata , Naoki Fujiwara , Nobuhiro Kikuchi , Yuichi Tomori
IPC分类号： G02B6/12
CPC分类号： G02B6/12007 , G02B6/122 , G02B6/131 , G02B6/136 , G02B6/4202 , H01S5/026 , H01S5/06206 , H01S5/06256 , H01S5/0654 , H01S5/068 , H01S5/101 , H01S5/1017 , H01S5/1025 , H01S5/1085 , H01S5/1215 , H01S5/1221 , H01S5/124 , H01S5/125 , H01S5/2205 , H01S5/227 , H01S2301/173
摘要： An integrated optical waveguide has first, second, and third optical waveguiding regions. The second optical waveguiding region has a refractive index different from that of the first optical waveguiding region. The second optical waveguiding region has an interface surface with the first optical waveguiding region that is inclined with respect to the waveguide direction of the first optical waveguiding region. The third optical waveguiding region has an interface surface with the second optical waveguiding region that is disposed such that a refraction direction through the interface surface is in line with the waveguide direction.
摘要翻译：集成光波导具有第一，第二和第三光波导区域。第二光波导区域具有与第一光波导区域不同的折射率。第二光波导区域具有与第一光波导区域相对于第一光波导区域的波导方向倾斜的界面。第三光波导区域具有与第二光波导区域的界面，该第二光波导区域被布置成使得通过界面表面的折射方向与波导方向成一直线。

29. 发明申请

US20060104321A1 Q-MODULATED SEMICONDUCTOR LASER WITH ELECTRO-ABSORPTIVE GRATING STRUCTURES 审中-公开
标题翻译：具有电吸收光栅结构的Q-MODULATED SEMICONDUCTOR LASER
公开(公告)号：US20060104321A1
公开(公告)日：2006-05-18
申请号：US11163019
申请日：2005-10-03
申请人： Jian-Jun He
发明人： Jian-Jun He
IPC分类号： H01S3/10
CPC分类号： H01S5/0265 , H01S5/1039 , H01S5/1209 , H01S5/1215 , H01S5/1221 , H01S5/124 , H01S5/125
摘要： A Q-modulated semiconductor laser comprises a λ/4-phase-shifted distributed-feedback grating. Two isolated electrodes are deposited on top of the grating, and one electrode is deposited on the back side of the laser substrate as a common ground. The first top-side electrode covers a portion of the grating including the phase-shift region, and provides an optical gain for the laser when a constant current is injected. The second top-side electrode covers the remaining portion of the grating away from the phase-shift region, which acts as a Q-modulator of the laser. An electrical signal is applied on the second electrode to change the absorption coefficient of the waveguide in the modulator section, resulting in a change in the Q-factor of the laser, and consequently the lasing threshold and output power. The integrated Q-modulated laser has advantages of high speed, high extinction ratio, low wavelength chirp and low cost.
摘要翻译： Q调制半导体激光器包括λ/ 4相移分布反馈光栅。两个隔离电极沉积在光栅的顶部，一个电极沉积在激光基板的背面作为公共地面。第一顶侧电极覆盖包括相移区域的光栅的一部分，并且当注入恒定电流时，为激光器提供光学增益。第二顶侧电极覆盖离开相移区域的光栅的剩余部分，该相移区域用作激光器的Q调制器。电信号施加在第二电极上以改变调制器部分中的波导的吸收系数，导致激光器的Q因子的变化，从而导致激光阈值和输出功率。集成Q调制激光器具有高速，高消光比，低波长啁啾和低成本的优点。

30. 发明授权

US06965628B1 Distributed feedback laser having a differential grating 有权
标题翻译：具有差分光栅的分布式反馈激光器
公开(公告)号：US06965628B1
公开(公告)日：2005-11-15
申请号：US10284128
申请日：2002-10-30
申请人： Thomas Lenosky , Giorgio Giaretta , Qing Deng
发明人： Thomas Lenosky , Giorgio Giaretta , Qing Deng
IPC分类号： H01S3/08 , H01S5/12
CPC分类号： H01S5/12 , H01S5/1212 , H01S5/1215 , H01S5/1225 , H01S5/124
摘要： A distributed feedback (“DFB”) laser featuring improved manufacturing yield and operational characteristics is disclosed. The present DFB laser includes a bottom confinement layer, an active region, and a top confinement layer disposed atop an n-doped substrate. A p-doped first top layer having a first index of refraction is disposed atop the top confinement layer. A grating is defined in the top surface of the first top layer, and a p-doped second top layer is overlaid on the grating. The two laser end facets are antireflectively coated. The grating is anisotropically etched to define a low kappa grating half and a high kappa grating half. Light waves produced in the active region interact with the grating and are biased toward the low kappa grating half that results in the majority of light signals passing through the end facet adjacent the low kappa grating half.
摘要翻译：公开了一种具有改进的制造产量和操作特性的分布式反馈（“DFB”）激光器。本DFB激光器包括底部限制层，有源区和设置在n掺杂衬底顶部的顶部限制层。具有第一折射率的p掺杂的第一顶层设置在顶部限制层的顶部。光栅被限定在第一顶层的顶表面中，并且p掺杂的第二顶层覆盖在光栅上。两个激光端面是抗反射涂层的。光栅被各向异性蚀刻以限定低kappa光栅半部和高kappa光栅一半。在有源区域中产生的光波与光栅相互作用，并被朝向低kappa光栅一半偏置，导致大部分光信号通过邻近低kappa光栅一半的端面。

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