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21. 发明授权

US5285514A Waveguide type photodetector and a method of fabricating the same 失效
标题翻译：波导型光电检测器及其制造方法
公开(公告)号：US5285514A
公开(公告)日：1994-02-08
申请号：US887806
申请日：1992-05-26
申请人： Hidetoshi Nojiri , Tamayo Hirokio
发明人： Hidetoshi Nojiri , Tamayo Hirokio
IPC分类号： G02F1/025 , G02B6/12 , G02B6/122 , G02B6/42 , H01L31/0264 , H01L31/10 , H01L31/112 , G02B6/10
CPC分类号： G02B6/122 , G02B6/12004 , G02B6/4206 , H01L31/1123
摘要： In a waveguide type photodetector for receiving and detecting a light guided thereinto, a groove is formed in a semiconductor substrate, a waveguide layer is formed on the semiconductor substrate, and a light absorbing layer for absorbing a light propagated through a waveguide in the waveguide layer is formed on the waveguide layer. The waveguide is formed as a three-dimensional waveguide formed in the waveguide layer due to the presense of the groove. The three-dimensional waveguide is maintained also under the light absorbing layer since the refractive index of a portion layered on the groove formed in the substrate is made large than that of portions other than this portion layered above the groove.
摘要翻译：在用于接收和检测被引导到其中的光的波导型光检测器中，在半导体衬底中形成沟槽，在半导体衬底上形成波导层，以及用于吸收通过波导层中的波导传播的光的光吸收层形成在波导层上。波导由于凹槽的出现而形成在波导层中形成的三维波导。由于形成在基板上的凹槽上的部分的折射率比层叠在凹槽之上的部分以外的部分的折射率大，所以三维波导也保持在光吸收层的下方。

22. 发明授权

US4872744A Single quantum well optical modulator 失效
标题翻译：单量子阱光调制器
公开(公告)号：US4872744A
公开(公告)日：1989-10-10
申请号：US144817
申请日：1988-01-15
申请人： Joseph H. Abeles , Alexander Kastalsky , Robert F. Leheny
发明人： Joseph H. Abeles , Alexander Kastalsky , Robert F. Leheny
IPC分类号： G02F1/015 , G02F1/017 , H01L29/778 , H01L31/0352 , H01L31/112
CPC分类号： B82Y20/00 , G02F1/01708 , H01L29/7783 , H01L31/0352 , H01L31/1123 , G02F2001/0156
摘要： High speed optoelectronic devices which are suitable for use in an optical integrated circuit design. The devices comprise a monolithic planar structure wherein exciton-resonant light propagates along a single mode waveguide containing a single quantum well as the absorbing media. Optical absorption is controlled by the bleaching effect induced by free carriers whose electrical conduction makes possible optical detection and monolithic high speed, gate-controlled transistor structures.
摘要翻译：适用于光集成电路设计的高速光电器件。这些器件包括单片平面结构，其中激子谐振光沿着包含单个量子阱的单模式波导作为吸收介质传播。光吸收由自由载流子诱导的漂白效应控制，其导电使得光学检测和单片高速门控晶体管结构成为可能。

23. 发明授权

US4346394A Gallium arsenide burrus FET structure for optical detection 失效
标题翻译：砷化镓刺激FET结构进行光学检测
公开(公告)号：US4346394A
公开(公告)日：1982-08-24
申请号：US133183
申请日：1980-03-24
申请人： Luis Figueroa , Huan-Wun Yen
发明人： Luis Figueroa , Huan-Wun Yen
IPC分类号： H04H20/88 , H01L31/112 , H01L27/14 , H01L29/80 , H01L31/10
CPC分类号： H01L31/1123
摘要： A GaAs FET structure with a high electric field region, or active region, contacted by source, gate and drain electrodes is provided which can be used for high speed optical detection or for microwave oscillator optical injection locking. The device provides for efficient coupling of optical radiation into the active region through an opening in a semi-insulating substrate used to support the device. A buffer layer between the active region and the substrate prevents leakage current to the substrate, permits a larger illumination window for improved optical coupling and provides mechanical support for the FET detector. GaAs photodetectors are also provided by eliminating the gate electrode.
摘要翻译：提供了具有与源极，栅极和漏极接触的高电场区域或有源区的GaAs FET结构，其可用于高速光学检测或微波振荡器光注入锁定。该器件通过用于支持器件的半绝缘衬底中的开口提供光辐射有效耦合到有源区域中。有源区和衬底之间的缓冲层防止对衬底的泄漏电流，允许更大的照明窗用于改善光耦合并为FET检测器提供机械支撑。还通过去除栅电极来提供GaAs光电探测器。

24. 发明申请

US20180358500A1 MSM ULTRAVIOLET RAY RECEIVING ELEMENT, MSM ULTRAVIOLET RAY RECEIVING DEVICE 审中-公开
公开(公告)号：US20180358500A1
公开(公告)日：2018-12-13
申请号：US16003591
申请日：2018-06-08
申请人： ASAHI KASEI KABUSHIKI KAISHA
发明人： Akira YOSHIKAWA , Kazuhiro NAGASE , Motoaki IWAYA , Saki USHIDA
IPC分类号： H01L31/112 , H01L31/0304 , H01L31/0224 , H01L31/02
CPC分类号： H01L31/1123 , H01L31/02005 , H01L31/022408 , H01L31/03048 , H01L31/1085
摘要： An MSM ultraviolet ray receiving element has a low dark state current value and a good photosensitivity. The MSM ultraviolet ray receiving element has a first nitride semiconductor layer on a substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, and first and second electrodes on the second nitride semiconductor layer. The first nitride semiconductor layer contains AlXGa(1-X)N (0.4≤X≤0.90). The second nitride semiconductor layer contains AlYGa(1-Y)N with a film thickness t (nm) satisfying 5≤t≤25. The first electrode and the second electrode contain a material containing at least three elements of Ti, Al, Au, Ni, V, Mo, Hf, Ta, W, Nb, Zn, Ag, Cr, and Zr. Al composition ratios X and Y and a film thickness t satisfy −0.009×t+X+0.22−0.03≤Y≤−0.009×t+X+0.22+0.03.

25. 发明申请

US20160351744A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160351744A1
公开(公告)日：2016-12-01
申请号：US15106996
申请日：2014-12-22
申请人： CANON KABUSHIKI KAISHA
发明人： Ryota Sekiguchi , Toshihiko Ouchi
IPC分类号： H01L31/112 , H01L31/108 , G01J1/44 , H01L27/146
CPC分类号： H01L31/1123 , G01J1/44 , G01J2001/4446 , G01N21/3581 , H01L27/0629 , H01L27/1463 , H01L27/14649 , H01L27/14689 , H01L29/66143 , H01L29/872 , H01L31/1085 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.
摘要翻译：半导体器件包括硅衬底和布置在硅衬底上的检测元件和p型和n型MOS晶体管，其中检测元件包括半导体层，电极和设置在其间的肖特基势垒，半导体层位于具有与p型或n型MOS晶体管的源极或漏极中的杂质扩散层相同的组成和高度的层的正上方，硅衬底中具有相同组成的区域，以及在硅衬底中刚好在p型MOS晶体管或n型MOS晶体管的栅极氧化膜的下方的沟道区的高度，或硅衬底中的具有相同组成和高度的区域位于p型和n型MOS晶体管之间的场氧化物膜正下方的区域。

26. 发明申请

US20140312445A1 LIGHT RECEIVING ELEMENT WITH OFFSET ABSORBING LAYER 审中-公开
标题翻译：光接收元件与偏移吸收层
公开(公告)号：US20140312445A1
公开(公告)日：2014-10-23
申请号：US14323565
申请日：2014-07-03
申请人： FUJITSU LIMITED
发明人： Kazumasa TAKABAYASHI
IPC分类号： H01L31/0232 , H01L27/144
CPC分类号： H01L31/02325 , H01L27/1443 , H01L27/146 , H01L31/105 , H01L31/1123
摘要： A light receiving element includes a core configured to propagate a signal light, a first semiconductor layer having a first conductivity type, the first semiconductor layer being configured to receive the signal light from the core along a first direction in which the core extends, an absorbing layer configured to absorb the signal light received by the first semiconductor layer, and a second semiconductor layer having a second conductivity type opposite to the first conductivity type.
摘要翻译：光接收元件包括被配置为传播信号光的芯，具有第一导电类型的第一半导体层，第一半导体层被配置为沿着芯延伸的第一方向接收来自芯的信号光，吸收被配置为吸收由第一半导体层接收的信号光的层，以及具有与第一导电类型相反的第二导电类型的第二半导体层。

27. 发明申请

US20120235265A1 LIGHT RECEIVING ELEMENT, LIGHT RECEIVING DEVICE, AND LIGHT RECEIVING MODULE 有权
标题翻译：光接收元件，光接收装置和光接收模块
公开(公告)号：US20120235265A1
公开(公告)日：2012-09-20
申请号：US13402114
申请日：2012-02-22
申请人： Kazumasa TAKABAYASHI
发明人： Kazumasa TAKABAYASHI
IPC分类号： H01L31/02
CPC分类号： H01L31/02325 , H01L27/1443 , H01L27/146 , H01L31/105 , H01L31/1123
摘要： A light receiving element includes a core configured to propagate a signal light, a first semiconductor layer having a first conductivity type, the first semiconductor layer being configured to receive the signal light from the core along a first direction in which the core extends, an absorbing layer configured to absorb the signal light received by the first semiconductor layer, and a second semiconductor layer having a second conductivity type opposite to the first conductivity type.
摘要翻译：光接收元件包括被配置为传播信号光的芯，具有第一导电类型的第一半导体层，第一半导体层被配置为沿着芯延伸的第一方向接收来自芯的信号光，吸收被配置为吸收由第一半导体层接收的信号光的层，以及具有与第一导电类型相反的第二导电类型的第二半导体层。

28. 发明授权

US5739561A Light sensitive semiconductor device and method of operation 失效
标题翻译：光敏半导体器件及其操作方法
公开(公告)号：US5739561A
公开(公告)日：1998-04-14
申请号：US640222
申请日：1996-04-30
申请人： Peter Wennekers
发明人： Peter Wennekers
IPC分类号： H01L31/0352 , H01L31/112 , H01L29/80
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/1123
摘要： A light sensitive semiconductor device (10) is formed in a well region (12) in a semiconductor substrate (11). A first voltage (30) is applied to a source region (4) of the semiconductor device (10) and to a contact region (13) to the well region (12) to attract holes. A second voltage (31) is applied to the source region (14) and a drain region (16) to provide a current flow. As photons (23) from a light source are absorbed by semiconductor device (10), the source to drain current is decreased.
摘要翻译：在半导体衬底（11）中的阱区（12）中形成光敏半导体器件（10）。将第一电压（30）施加到半导体器件（10）的源极区域（4）和到阱区域（12）的接触区域（13）以吸引孔。第二电压（31）施加到源极区域（14）和漏极区域（16）以提供电流。当来自光源的光子（23）被半导体器件（10）吸收时，源极到漏极电流减小。

29. 发明授权

US5567973A Optical field-effect transistor with improved sensitivity 失效
标题翻译：灵敏度提高的光场效应晶体管
公开(公告)号：US5567973A
公开(公告)日：1996-10-22
申请号：US511274
申请日：1995-08-04
申请人： Arthur Paolella , Bahram Nabet
发明人： Arthur Paolella , Bahram Nabet
IPC分类号： H01L31/112 , H01L31/062 , H01L31/113
CPC分类号： H01L31/1123
摘要： An FET or MESFET having a semiconductor optically transparent gate. A substrate having a doped channel placed thereon together with a source and a drain with a semiconductor gate formed therebetween may be manufactured using conventional semiconductor manufacturing techniques. The optically transparent highly doped semiconductor gate forms an n+-n junction with the n-type doped channel. This junction is modulated or changed by an optical signal causing a photovoltaic effect that reduces the barrier potential at the n+-n junction resulting in a depletion of the accumulation region. This results in increased flow of current in the doped channel. The transparent highly doped semiconductor gate increases performance of the FET or MESFET optical detector. This is an improvement over conventional metal semiconductor field-effect transistor (MESFET) technology, and can be applied to microwave monolithic integrated circuits (MMIC).
摘要翻译：具有半导体光学透明栅极的FET或MESFET。可以使用常规的半导体制造技术来制造具有掺杂沟道的衬底以及源极和其间形成有半导体栅极的漏极。光学透明的高掺杂半导体栅极与n型掺杂沟道形成n + n结。该结被光信号调制或改变，导致光电效应，降低n + -n结处的势垒电位，导致积聚区域的耗尽。这导致掺杂沟道中的电流流动增加。透明高掺杂半导体栅极增加了FET或MESFET光学检测器的性能。这是对传统金属半导体场效应晶体管（MESFET）技术的改进，可以应用于微波单片集成电路（MMIC）。

30. 发明授权

US5536954A Optically coupled MESFET 失效
标题翻译：光耦合MESFET
公开(公告)号：US5536954A
公开(公告)日：1996-07-16
申请号：US292153
申请日：1994-08-17
申请人： Arye Rosen , Arthur C. Paolella , Peter R. Herczfeld , Joseph H. Abeles
发明人： Arye Rosen , Arthur C. Paolella , Peter R. Herczfeld , Joseph H. Abeles
IPC分类号： G02B6/42 , H01L31/112 , H01L27/14
CPC分类号： G02B6/4295 , G02B6/42 , H01L31/1123
摘要： An optically coupled FET comprised of bottom layer, a top layer in which FET is formed and an intermediate layer having a waveguide communicating with a grating in registration with the FET.
摘要翻译：由底层构成的光耦合FET，其中形成FET的顶层和具有与与FET对准的光栅连通的波导的中间层。

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