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    • 29. 发明申请
    • Solar cell and solar cell unit
    • 太阳能电池和太阳能电池单元
    • US20020158297A1
    • 2002-10-31
    • US09914293
    • 2001-11-06
    • Yuji Fujimori, Suwa-ShiTsutomu Miyamoto, Shiojiri-shi
    • H01L027/14H01L031/00
    • H01L31/07H01G9/2031H01G9/2068H01L51/0086H01L51/4226H01L51/445Y02E10/542Y02E10/549
    • A conventional dye-sensitized solar cell is a wet cell employing an electrolyte such as an iodine solution or the like, it is necessary to seal the solar cell with a sealing compound or the like in order to contain the iodine solution therein. Therefore, there are many problems in that, for example, leakage of electrolyte solution occurs when the sealing is broken. Furthermore, when only a flat-shaped titanium electrode is used, current and voltage of practically required levels can not be secured because the absorption area of solar rays is small. The solar cell of the present invention, employing a porous titanium dioxide semiconductor, is characterized in that the titanium dioxide semiconductor is held between a pair of electrodes so that the titanium dioxide semiconductor and at least one of the electrodes form a rectification barrier.
    • 常规的染料敏化太阳能电池是使用诸如碘溶液等的电解质的湿细胞,需要用密封化合物等密封太阳能电池,以便在其中含有碘溶液。 因此,存在许多问题,例如,当密封破裂时,发生电解液的泄漏。 此外,当仅使用平面状的钛电极时,由于太阳光线的吸收面积小,所以不能确保实际所需水平的电流和电压。 本发明的使用多孔二氧化钛半导体的太阳能电池的特征在于,二氧化钛半导体保持在一对电极之间,使得二氧化钛半导体和至少一个电极形成整流屏障。
    • 30. 发明授权
    • Device structure for providing improved Schottky barrier rectifier
    • 用于提供改进的肖特基势垒整流器的器件结构
    • US06184563B2
    • 2001-02-06
    • US09362928
    • 1999-07-27
    • Ho-Yuan Yu
    • Ho-Yuan Yu
    • H01L27095
    • H01L27/0814H01L21/76224H01L29/872H01L31/07H01L31/108Y02E10/50
    • This invention discloses a Schottky barrier rectifier formed in a semiconductor chip of a first conductivity type having a cathode electrode connected thereto near a bottom surface of the semiconductor chip. The Schottky rectifier further includes an epitaxial layer of the first conductivity type of a reduced doping concentration than the semiconductor chip near a top surface of the semiconductor chip. The Schottky rectifier further includes a high resistivity region disposed near peripheral edges of the semiconductor chip containing a reduced dopant concentration than the epitaxial layer. The Schottky rectifier further includes an anode electrode defined by a conductive layer disposed on top over the epitaxial layer wherein the conductive layer having all peripheral edges disposed on top of the high resistivity region. In a preferred embodiment, e.g., the rectifier further includes a barrier height reduction region disposed below the anode electrode disposed at a distance away from the high resistivity region. The barrier height reduction region containing a higher dopant concentration than the epitaxial layer for reducing the barrier height and for reducing a forward resistance of the Schottky rectifier.
    • 本发明公开了一种肖特基势垒整流器,其形成在第一导电类型的半导体芯片中,在半导体芯片的底表面附近连接有阴极电极。 肖特基整流器还包括在半导体芯片的顶表面附近的半导体芯片的掺杂浓度降低的第一导电类型的外延层。 肖特基整流器还包括设置在半导体芯片的外围边缘附近的高电阻率区域,其包含比外延层减少的掺杂剂浓度。 肖特基整流器还包括由设置在外延层上方的导电层限定的阳极电极,其中导电层具有设置在高电阻率区域顶部的所有外围边缘。 在优选实施例中,例如,整流器还包括设置在距离高电阻率区域一定距离处的阳极电极下方的势垒高度减小区域。 阻挡层高度降低区域包含比用于降低势垒高度的外延层更高的掺杂剂浓度并且用于减小肖特基整流器的正向电阻。