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21. 发明申请

US20090165852A1 NANOPHOTOVOLTAIC DEVICES 有权
标题翻译： NANOPHOTOVOLTAIC设备
公开(公告)号：US20090165852A1
公开(公告)日：2009-07-02
申请号：US12388895
申请日：2009-02-19
申请人： Steven J. Wojtczuk , James G. Moe , Roger G. Little
发明人： Steven J. Wojtczuk , James G. Moe , Roger G. Little
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/06 , H01L31/028
CPC分类号： H01L31/07 , B82Y30/00 , H01L31/035281 , H01L31/18 , Y02E10/50
摘要： The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.
摘要翻译：本发明提供尺寸在约50nm至约5微米范围内的纳米光伏器件及其制造方法。在一些实施例中，纳米光伏器件包括夹在两个金属层之间的例如由硅形成的半导体芯，其中一个与半导体芯形成肖特基势垒结，另一个与其形成欧姆接触。在另一个实施例中，纳米光伏器件包括半导体芯，该半导体芯包括夹在与芯之间形成欧姆接触的两个金属层之间的p-n结。

22. 发明申请

US20060196537A1 Carbon nanotube schottky barrier photovoltaic cell 有权
标题翻译：碳纳米管肖特基势垒光伏电池
公开(公告)号：US20060196537A1
公开(公告)日：2006-09-07
申请号：US11070834
申请日：2005-03-02
申请人： Todd Narkis , Matt Marcus , Max Lagally , Mark Eriksson
发明人： Todd Narkis , Matt Marcus , Max Lagally , Mark Eriksson
IPC分类号： H01L31/00
CPC分类号： H01L31/07 , B82Y10/00 , H01L51/0048 , H01L51/4206 , H01L51/444 , Y02E10/549 , Y02P70/521
摘要： Carbon nanotube Schottky barrier photovoltaic cells and methods and apparatus for making the cells are provided. The photovoltaic cells include at least one contact made from a first contact material, at least one contact made from a second contact material and a plurality of photoconducting carbon nanotubes bridging the contacts. A Schottky barrier is formed at the interface between the first contact material and the carbon nanotubes while at the interface between the second contact material and the carbon nanotubes, a Schottky barrier for the opposite carrier is formed, or a small, or no Schottky barrier is formed. It is the Schottky barrier asymmetry that allows the photo-excited electron-hole pairs to escape from the carbon nanotube device.
摘要翻译：提供碳纳米管肖特基势垒光伏电池以及用于制造电池的方法和装置。光伏电池包括由第一接触材料制成的至少一个触点，由第二触点材料制成的至少一个触点和桥接触点的多个光导碳纳米管。在第一接触材料和碳纳米管之间的界面处形成肖特基势垒，而在第二接触材料和碳纳米管之间的界面处，形成用于相反载体的肖特基势垒，或者小的或没有肖特基势垒是形成。肖特基势垒不对称性允许光激发的电子 - 空穴对从碳纳米管器件逸出。

23. 发明授权

US06956163B2 Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure 失效
标题翻译：基于固态异质结构内部电荷发射的光伏能量生产装置和方法
公开(公告)号：US06956163B2
公开(公告)日：2005-10-18
申请号：US10645747
申请日：2003-08-20
申请人： Eric W. McFarland
发明人： Eric W. McFarland
IPC分类号： H01L31/04 , H01G9/20 , H01L31/00 , H01L31/0256 , H01L31/0352 , H01L31/042 , H01L31/07 , H01L51/30 , H02N6/00
CPC分类号： H01G9/2031 , H01L31/0352 , H01L31/035281 , H01L31/07 , H01L51/0038 , H01L51/0073 , H01L51/4226 , H01L51/4286 , Y02E10/542 , Y02E10/549 , Y02P70/521
摘要： An apparatus and method for solar energy production comprises a multi-layer solid-state structure including a photosensitive layer, a thin conductor, a charge separation layer, and a back ohmic conductor, wherein light absorption occurs in a photosensitive layer and the charge carriers produced thereby are transported through the thin conductor through the adjacent potential energy barrier. The open circuit voltage of the solar cell can be manipulated by choosing from among a wide selection of materials making up the thin conductor, the charge separation layer, and the back ohmic layer.
摘要翻译：一种用于太阳能产生的装置和方法包括包括感光层，薄导体，电荷分离层和背欧姆导体的多层固态结构，其中在感光层中发生光吸收，并且产生电荷载流子从而通过相邻的势垒阻挡穿过细导体。太阳能电池的开路电压可以通过从构成薄导体，电荷分离层和背欧姆层的各种材料中选择来进行操作。

24. 发明授权

US06774300B2 Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure 失效
标题翻译：基于固态异质结构内部电荷发射的光伏能量生产装置和方法
公开(公告)号：US06774300B2
公开(公告)日：2004-08-10
申请号：US10057223
申请日：2002-01-25
申请人： Eric W. McFarland
发明人： Eric W. McFarland
IPC分类号： H01L3104
CPC分类号： H01G9/2031 , H01L31/0352 , H01L31/035281 , H01L31/07 , H01L51/0038 , H01L51/0073 , H01L51/4226 , H01L51/4286 , Y02E10/542 , Y02E10/549 , Y02P70/521
摘要： An apparatus and method for solar energy production comprises a multi-layer solid-state structure including a photosensitive layer, a thin conductor, a charge separation layer, and a back ohmic conductor, wherein light absorption occurs in a photosensitive layer and the charge carriers produced thereby are transported through the thin conductor through the adjacent potential energy barrier. The open circuit voltage of the solar cell can be manipulated by choosing from among a wide selection of materials making up the thin conductor, the charge separation layer, and the back ohmic layer.
摘要翻译：一种用于太阳能产生的装置和方法包括包括感光层，薄导体，电荷分离层和背欧姆导体的多层固态结构，其中在感光层中发生光吸收，并且产生电荷载流子从而通过相邻的势垒阻挡穿过细导体。太阳能电池的开路电压可以通过从构成薄导体，电荷分离层和背欧姆层的各种材料中选择来进行操作。

25. 发明授权

US06730538B1 Fabricating electronic devices using actinide oxide semiconductor materials 失效
标题翻译：使用锕系氧化物半导体材料制造电子器件
公开(公告)号：US06730538B1
公开(公告)日：2004-05-04
申请号：US09599341
申请日：2000-06-22
申请人： Thomas T. Meek , Michael Z. Hu
发明人： Thomas T. Meek , Michael Z. Hu
IPC分类号： H01L2100
CPC分类号： H01L31/18 , C22B58/00 , H01L21/31604 , H01L31/032 , H01L31/07 , H01L35/22 , Y02E10/50
摘要： A method for fabricating electronic devices. First, an actinide oxide semiconductor material is provided. Next, an electronic device is fabricated using the actinide oxide semiconductor material.
摘要翻译：一种制造电子器件的方法。首先，提供锕系氧化物半导体材料。接下来，使用锕系氧化物半导体材料制造电子器件。

26. 发明申请

US20020158297A1 Solar cell and solar cell unit 失效
标题翻译：太阳能电池和太阳能电池单元
公开(公告)号：US20020158297A1
公开(公告)日：2002-10-31
申请号：US09914293
申请日：2001-11-06
发明人： Yuji Fujimori, Suwa-Shi , Tsutomu Miyamoto, Shiojiri-shi
IPC分类号： H01L027/14 , H01L031/00
CPC分类号： H01L31/07 , H01G9/2031 , H01G9/2068 , H01L51/0086 , H01L51/4226 , H01L51/445 , Y02E10/542 , Y02E10/549
摘要： A conventional dye-sensitized solar cell is a wet cell employing an electrolyte such as an iodine solution or the like, it is necessary to seal the solar cell with a sealing compound or the like in order to contain the iodine solution therein. Therefore, there are many problems in that, for example, leakage of electrolyte solution occurs when the sealing is broken. Furthermore, when only a flat-shaped titanium electrode is used, current and voltage of practically required levels can not be secured because the absorption area of solar rays is small. The solar cell of the present invention, employing a porous titanium dioxide semiconductor, is characterized in that the titanium dioxide semiconductor is held between a pair of electrodes so that the titanium dioxide semiconductor and at least one of the electrodes form a rectification barrier.
摘要翻译：常规的染料敏化太阳能电池是使用诸如碘溶液等的电解质的湿细胞，需要用密封化合物等密封太阳能电池，以便在其中含有碘溶液。因此，存在许多问题，例如，当密封破裂时，发生电解液的泄漏。此外，当仅使用平面状的钛电极时，由于太阳光线的吸收面积小，所以不能确保实际所需水平的电流和电压。本发明的使用多孔二氧化钛半导体的太阳能电池的特征在于，二氧化钛半导体保持在一对电极之间，使得二氧化钛半导体和至少一个电极形成整流屏障。

27. 发明授权

US06184563B2 Device structure for providing improved Schottky barrier rectifier 失效
标题翻译：用于提供改进的肖特基势垒整流器的器件结构
公开(公告)号：US06184563B2
公开(公告)日：2001-02-06
申请号：US09362928
申请日：1999-07-27
申请人： Ho-Yuan Yu
发明人： Ho-Yuan Yu
IPC分类号： H01L27095
CPC分类号： H01L27/0814 , H01L21/76224 , H01L29/872 , H01L31/07 , H01L31/108 , Y02E10/50
摘要： This invention discloses a Schottky barrier rectifier formed in a semiconductor chip of a first conductivity type having a cathode electrode connected thereto near a bottom surface of the semiconductor chip. The Schottky rectifier further includes an epitaxial layer of the first conductivity type of a reduced doping concentration than the semiconductor chip near a top surface of the semiconductor chip. The Schottky rectifier further includes a high resistivity region disposed near peripheral edges of the semiconductor chip containing a reduced dopant concentration than the epitaxial layer. The Schottky rectifier further includes an anode electrode defined by a conductive layer disposed on top over the epitaxial layer wherein the conductive layer having all peripheral edges disposed on top of the high resistivity region. In a preferred embodiment, e.g., the rectifier further includes a barrier height reduction region disposed below the anode electrode disposed at a distance away from the high resistivity region. The barrier height reduction region containing a higher dopant concentration than the epitaxial layer for reducing the barrier height and for reducing a forward resistance of the Schottky rectifier.
摘要翻译：本发明公开了一种肖特基势垒整流器，其形成在第一导电类型的半导体芯片中，在半导体芯片的底表面附近连接有阴极电极。肖特基整流器还包括在半导体芯片的顶表面附近的半导体芯片的掺杂浓度降低的第一导电类型的外延层。肖特基整流器还包括设置在半导体芯片的外围边缘附近的高电阻率区域，其包含比外延层减少的掺杂剂浓度。肖特基整流器还包括由设置在外延层上方的导电层限定的阳极电极，其中导电层具有设置在高电阻率区域顶部的所有外围边缘。在优选实施例中，例如，整流器还包括设置在距离高电阻率区域一定距离处的阳极电极下方的势垒高度减小区域。阻挡层高度降低区域包含比用于降低势垒高度的外延层更高的掺杂剂浓度并且用于减小肖特基整流器的正向电阻。

28. 发明授权

US5961741A Metal semiconductor optical device 失效
标题翻译：金属半导体光学器件
公开(公告)号：US5961741A
公开(公告)日：1999-10-05
申请号：US842867
申请日：1997-04-17
申请人： Kang-Ho Park , Jeong-Sook Ha
发明人： Kang-Ho Park , Jeong-Sook Ha
IPC分类号： H01L31/04 , H01L31/07 , H01L31/108 , H01L31/06 , H01L27/095
CPC分类号： H01L31/07 , H01L31/108 , Y02E10/50
摘要： The present invention provides a metal semiconductor optical device which is capable of thinly uniformly growing a metal film on a semiconductor substrate using a layer functioning as an interface active agent and decreasing the density of interface energy state occurring between the metal thin film and the semiconductor, to thereby enhance the optical absorption efficiency of light beam. The interface single atomic layer is formed by one of the group V elements, e.g., one of antimony(Sb) or arsenic(As). Additionally, the metal thin film has a thickness of approximately 30 .ANG..
摘要翻译：本发明提供一种金属半导体光学元件，其能够使用作为界面活性剂的层在半导体基板上薄均匀地生长金属膜，并且降低了在金属薄膜和半导体之间发生的界面能态的密度，从而提高光束的光吸收效率。界面单原子层由V族元素之一形成，例如锑（Sb）或砷（As）之一。另外，金属薄膜的厚度约为30。

29. 发明授权

US4289920A Multiple bandgap solar cell on transparent substrate 失效
标题翻译：透明基板上的多个带隙太阳能电池
公开(公告)号：US4289920A
公开(公告)日：1981-09-15
申请号：US161816
申请日：1980-06-23
申请人： Harold J. Hovel
发明人： Harold J. Hovel
IPC分类号： H01L31/04 , H01L31/07 , H01L31/06
CPC分类号： H01L31/0687 , H01L31/07 , H01L31/0725 , Y02E10/544
摘要： The disclosure provides a highly efficient e.g., up to 40% efficiency, solar cell for solar energy concentrator use. Two solar cell layers comprised of different semiconductor materials are grown upon a transparent, insulating substrate. A metal layer covering the bottom serves to reflect light back through the structure, and can serve as a wrap-around electrical contact to both materials. As an example, a structure of Si and GaAlAs is produced on a substrate from the group consisting of Al.sub.2 O.sub.3, Spinel, Quartz and BeO.
摘要翻译：本公开提供了一种用于太阳能集中器的太阳能电池的高效率，例如高达40％的效率。由不同半导体材料构成的两个太阳能电池层生长在透明绝缘基板上。覆盖底部的金属层用于将光反射回结构，并且可以用作两种材料的环绕电接触。作为实例，在由Al 2 O 3，尖晶石，石英和BeO组成的组中的基底上产生Si和GaAlAs的结构。

30. 发明授权

US4289602A Electrochemical oxidation of amorphous silicon 失效
标题翻译：非晶硅的电化学氧化
公开(公告)号：US4289602A
公开(公告)日：1981-09-15
申请号：US150243
申请日：1980-05-15
申请人： Joseph L. Sansregret
发明人： Joseph L. Sansregret
IPC分类号： H01L21/321 , H01L31/07 , H01L31/20 , C25D5/00 , H01L31/04
CPC分类号： H01L31/202 , H01L21/32105 , H01L31/07 , Y02E10/50 , Y02P70/521
摘要： The invention teaches an electrochemical process for electrolysis growth of an oxide layer on hydrogenated amorphous silicon. Embodied in a photovoltaic device, the oxide layer increases the open circuit voltage of the device and enhances the longevity of the photovoltaic characteristics of the device.
摘要翻译：本发明教导了在氢化非晶硅上氧化层电解生长的电化学方法。在光电器件中，氧化物层增加了器件的开路电压，并且增强了器件的光电特性的寿命。

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