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21. 发明授权

US07759238B2 Method for fabricating semiconductor device capable of adjusting the thickness of gate oxide layer 有权
标题翻译：制造半导体器件的方法，该半导体器件能够调节栅极氧化物层的厚度
公开(公告)号：US07759238B2
公开(公告)日：2010-07-20
申请号：US12187370
申请日：2008-08-06
申请人： Tai Chiang Chen , Xin Wang
发明人： Tai Chiang Chen , Xin Wang
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/31662 , H01L21/02233 , H01L21/28035 , H01L21/28167 , H01L21/31658 , H01L29/51 , Y10S438/981
摘要： The present invention provides a method for fabricating semiconductor device, which is capable of adjusting a gate oxide layer thickness, including: providing a semiconductor substrate; growing a first oxide layer on a surface of the semiconductor substrate; patterning the first oxide layer to expose the first oxide layer corresponding to a gate to be formed; removing the exposed first oxide layer; immersing the substrate into deionized water to grow a second oxide layer; forming a polysilicon layer on the surfaces of the first oxide layer and the second oxide layer; and etching the polysilicon layer to form a gate. The method for fabricating semiconductor device according to the present invention, which is capable of adjusting the thickness of gate oxide layer, can control the thickness of gate oxide layer precisely to satisfy the requirement for different threshold voltages.
摘要翻译：本发明提供一种能够调整栅极氧化层厚度的半导体器件的制造方法，包括：提供半导体衬底; 在半导体衬底的表面上生长第一氧化物层; 图案化第一氧化物层以暴露与要形成的栅极对应的第一氧化物层; 去除暴露的第一氧化物层; 将基底浸入去离子水中以生长第二氧化物层; 在所述第一氧化物层和所述第二氧化物层的表面上形成多晶硅层; 并蚀刻多晶硅层以形成栅极。根据本发明的半导体器件的制造方法，其能够调整栅氧化层的厚度，能够精确地控制栅氧化层的厚度，以满足不同阈值电压的要求。

22. 发明授权

US07754620B2 Film formation method and recording medium 失效
标题翻译：成膜方法和记录介质
公开(公告)号：US07754620B2
公开(公告)日：2010-07-13
申请号：US11391246
申请日：2006-03-29
申请人： Kouji Shimomura
发明人： Kouji Shimomura
IPC分类号： H01L21/469
CPC分类号： H01L21/31662 , C23C16/0272 , C23C16/401 , H01L21/02148 , H01L21/022 , H01L21/02211 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02323 , H01L21/0234 , H01L21/28194 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method of forming a metal silicate film on a silicon substrate in a processing container is disclosed that includes the steps of (a) forming a base oxide film on the silicon substrate by feeding an oxidation gas into the processing container; and (b) forming the metal silicate film on the base oxide film by continuing to feed the oxidation gas and by feeding a first gaseous phase material formed of an amidic organic hafnium compound and a second gaseous phase material formed of a silicon-containing material into the processing container.
摘要翻译：公开了一种在处理容器中的硅衬底上形成金属硅酸盐膜的方法，其包括以下步骤：（a）通过将氧化气体进料到处理容器中，在硅衬底上形成氧化膜; 和（b）通过继续供给氧化气体并通过将由酰胺类有机铪化合物形成的第一气相材料和由含硅材料形成的第二气相材料供给到基底氧化物膜上形成金属硅酸盐膜处理容器。

23. 发明授权

US07737048B2 Method for controlling thickness distribution of a film 有权
标题翻译：控制薄膜厚度分布的方法
公开(公告)号：US07737048B2
公开(公告)日：2010-06-15
申请号：US11514934
申请日：2006-09-05
申请人： Takayuki Kanda
发明人： Takayuki Kanda
IPC分类号： H01L21/31
CPC分类号： H01L22/20 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L22/12
摘要： A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-H2 concentration in the ambient gas and a subsequent second ISSG process using a 5%-H2 concentration in the ambient gas, wherein the second ISSG process compensates an in-plane thickness distribution of the film formed by the first ISSG process. The time length for the first and second ISSG steps is determined based on a desired film thickness, a time length dependency of a film formed by the second ISSG process, and the oxidation rate of the first and second ISSG processes.
摘要翻译：形成氧化膜的方法包括在环境气体中使用1％-H2浓度的第一原位蒸汽产生（ISSG）方法和在环境气体中使用5％-H 2浓度的随后的第二ISSG方法，其中第二ISSG过程补偿由第一ISSG工艺形成的膜的面内厚度分布。第一和第二ISSG步骤的时间长度是基于期望的膜厚度，由第二ISSG工艺形成的膜的时间长度依赖性以及第一和第二ISSG工艺的氧化速率来确定的。

24. 发明授权

US07736994B2 Method for manufacturing compound material wafers and corresponding compound material wafer 有权
标题翻译：复合材料晶片和相应复合材料晶圆的制造方法
公开(公告)号：US07736994B2
公开(公告)日：2010-06-15
申请号：US11850481
申请日：2007-09-05
申请人： Patrick Reynaud , Oleg Kononchuk , Michael Stinco
发明人： Patrick Reynaud , Oleg Kononchuk , Michael Stinco
IPC分类号： H01L21/30
CPC分类号： H01L21/31662 , H01L21/02032 , H01L21/02238 , H01L21/02255 , H01L21/76254 , Y10T428/8305
摘要： The invention relates to a method for manufacturing compound material wafers, in particular, silicon on insulator type wafers, by providing an initial donor substrate, forming an insulating layer over the initial donor substrate, forming a predetermined splitting area in the initial donor substrate, attaching the initial donor substrate onto a handle substrate and detaching the donor substrate at the predetermined splitting area, thereby transferring a layer of the initial donor substrate onto the handle substrate to form a compound material wafer. In order to be able to reuse the donor substrate more often, the invention proposes to carry out the thermal treatment step to form the insulating layer at a temperature of less than 950° C., in particular, less than 900° C., and preferably at 850° C. The invention also relates to a silicon on insulator type wafer manufactured according to the inventive method.
摘要翻译：本发明涉及通过提供初始施主衬底，在初始施主衬底上形成绝缘层，在初始施主衬底中形成预定的分裂区域，附着在一起制造复合材料晶片，特别是绝缘体上硅晶片的方法将初始施主衬底放置在手柄衬底上并在预定的分割区域分离施主衬底，从而将初始施主衬底的一层转移到手柄衬底上以形成复合材料晶片。为了能够更经常地再次使用供体衬底，本发明提出进行热处理步骤以在小于950℃，特别是小于900℃的温度下形成绝缘层，以及优选在850℃。本发明还涉及根据本发明方法制造的绝缘体上硅晶片。

25. 发明申请

US20100136765A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100136765A1
公开(公告)日：2010-06-03
申请号：US12624691
申请日：2009-11-24
申请人： Tetsuya KAKEHATA , Takashi KUDO
发明人： Tetsuya KAKEHATA , Takashi KUDO
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02131 , H01L21/02238 , H01L21/02255 , H01L21/0234 , H01L21/31662 , H01L23/544 , H01L2223/54406 , H01L2223/54433 , H01L2223/5448 , H01L2924/0002 , H01L2924/09701 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00
摘要： When printing is performed on a base substrate with a laser after a single crystal silicon layer is transferred to the base substrate, there are problems such as ablation of the single crystal silicon layer in the peripheral portion of a printed dot or attachment of glass chips or the like to the surface of the single crystal silicon layer. After printing is performed on the bonding surface of a silicon wafer with a laser, the surface of the silicon wafer is polished by CMP (chemical mechanical polishing), so that the projection in the peripheral portion of the printed dot is removed. After that, the silicon wafer is bonded to the base substrate. Since the depression of the printed dot remains to some extent by a chemical etching effect even after the polishing by CMP, the single crystal silicon layer is not transferred only at the depression portion at the time of the transfer; accordingly, the information is left on the base substrate.
摘要翻译：在将单晶硅层转印到基底基板上之后，在具有激光的基底基板上进行印刷的情况下，存在印刷点的周边部分中的单晶硅层的烧蚀或玻璃芯片的附着等问题，类似于单晶硅层的表面。在利用激光在硅晶片的接合表面上进行印刷之后，通过CMP（化学机械抛光）对硅晶片的表面进行抛光，从而去除印刷点的周边部分的突起。之后，将硅晶片接合到基底基板。由于即使在通过CMP研磨之后，由于印刷点的凹陷在某种程度上仍然通过化学蚀刻效果而保持，所以在转印时单晶硅层不会在凹陷部分传输; 因此，信息留在基底基板上。

26. 发明授权

US07704853B2 Method for the elimination of the effects of defects on wafers 有权
标题翻译：消除晶片缺陷影响的方法
公开(公告)号：US07704853B2
公开(公告)日：2010-04-27
申请号：US11389485
申请日：2006-03-24
申请人： Martin Kerber , Nikolaos Hatzopoulos
发明人： Martin Kerber , Nikolaos Hatzopoulos
IPC分类号： H01L21/76
CPC分类号： H01L29/515 , H01L21/28167 , H01L21/31662
摘要： A method eliminates effects of defects on wafers caused by cavities adjacent to the surface of a semiconductor (e.g., silicon) wafer. A first insulating layer is applied to the surface of the semiconductor wafer and into the cavities adjacent to the surface. The applied first insulating layer is covered with a sacrificial layer. A selective back-etching of the sacrificial layer is carried out, such that the cavities adjacent to the surface remain filled with the sacrificial layer. A second insulating layer is applied directly to the first insulating layer and, in a subsequent method step, a conducting layer is applied to the second insulating layer.
摘要翻译：一种方法消除了由与半导体（例如硅）晶片的表面相邻的空腔引起的晶片缺陷的影响。将第一绝缘层施加到半导体晶片的表面并进入与表面相邻的空腔中。施加的第一绝缘层被牺牲层覆盖。执行牺牲层的选择性背蚀刻，使得与表面相邻的空腔保持填充有牺牲层。将第二绝缘层直接施加到第一绝缘层，并且在随后的方法步骤中，将导电层施加到第二绝缘层。

27. 发明申请

US20100093186A1 METHOD FOR FORMING SILICON OXIDE FILM, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM 失效
公开(公告)号：US20100093186A1
公开(公告)日：2010-04-15
申请号：US12443137
申请日：2007-09-28
申请人： Takashi Kobayashi , Toshihiko Shinozawa , Yoshiro Abe , Junichi Kitagawa
发明人： Takashi Kobayashi , Toshihiko Shinozawa , Yoshiro Abe , Junichi Kitagawa
IPC分类号： H01L21/316 , H01L21/3065
CPC分类号： H01L21/76232 , H01L21/0214 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/28211 , H01L21/28247 , H01L21/3143 , H01L21/31662 , H01L21/3185 , H01L29/4236 , H01L29/66795
摘要： The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed.

28. 发明申请

US20100093185A1 METHOD FOR FORMING SILICON OXIDE FILM, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM 失效
标题翻译：形成硅氧烷膜，等离子体加工设备和储存介质的方法
公开(公告)号：US20100093185A1
公开(公告)日：2010-04-15
申请号：US12443044
申请日：2007-09-28
申请人： Yoshiro Kabe , Takashi Kobayashi , Toshihiko Shiozawa , Junichi Kitagawa
发明人： Yoshiro Kabe , Takashi Kobayashi , Toshihiko Shiozawa , Junichi Kitagawa
IPC分类号： H01L21/316 , C23C16/513 , C23C16/52
CPC分类号： H01L21/76232 , H01L21/0214 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/28211 , H01L21/28247 , H01L21/31662 , H01L21/76224 , H01L29/4236 , H01L29/66795
摘要： The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed.
摘要翻译：本发明提供一种形成氧化硅膜的方法，其具有基本上均匀的膜厚度，并且不受等离子体氧化工艺的优点的保证，在受加工物体上设置的图案中的致密部位和散射部位的影响在低压和低氧浓度条件下进行。在该方法中，在等离子体处理装置的处理室中，将处理气体的等离子体施加到具有凹凸图案的物体的表面，以氧化物体表面上的硅，从而形成硅氧化膜。在处理气体中的氧的比例在0.1〜10％的范围内且压力在0.133Pa〜133.3Pa的范围内的条件下产生等离子体，用等离子体氧化法，具有形成在其中的多个通孔，设置在处理室中用于产生等离子体的区域和待处理物体之间。

29. 发明申请

US20100093179A1 PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：图案形成方法和半导体器件制造方法
公开(公告)号：US20100093179A1
公开(公告)日：2010-04-15
申请号：US12521184
申请日：2007-12-20
申请人： Masaru Hori , Yoshiro Kabe , Toshihiko Shiozawa , Junichi Kitagawa
发明人： Masaru Hori , Yoshiro Kabe , Toshihiko Shiozawa , Junichi Kitagawa
IPC分类号： H01L21/3065 , H01L21/306 , H01L21/3105
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02252 , H01L21/30604 , H01L21/3065 , H01L21/31111 , H01L21/31116 , H01L29/66818
摘要： A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus and thereby forming a silicon oxide film on a surface of the initial pattern; and removing the silicon oxide film. The pattern forming method is arranged to repeatedly perform formation of the silicon oxide film and removal of the silicon oxide film so as to form an objective pattern having a second line width finer than the first line width on the target object.
摘要翻译：图案形成方法包括制备包括硅的目标物体，其中形成有初始图案并具有第一线宽度; 在等离子体处理装置的处理室内的硅表面上进行等离子体氧化处理，由此在初始图案的表面上形成氧化硅膜; 并除去氧化硅膜。图案形成方法被配置为反复进行氧化硅膜的形成和氧化硅膜的去除，以形成目标物体上具有比第一线宽窄的第二线宽的物镜图案。

30. 发明授权

US07696107B2 Nitride film forming method, semiconductor device fabrication method, capacitor fabrication method and nitride film forming apparatus 失效
标题翻译：氮化物膜形成方法，半导体器件制造方法，电容器制造方法和氮化物成膜装置
公开(公告)号：US07696107B2
公开(公告)日：2010-04-13
申请号：US11150253
申请日：2005-06-13
申请人： Toshiharu Yamauchi , Tunenori Yamauchi , Kumiko Toyota
发明人： Toshiharu Yamauchi , Tunenori Yamauchi , Kumiko Toyota
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31662 , H01L21/3185
摘要： The nitride film forming method comprises the first step of loading a semiconductor substrate 12 into a reaction furnace, and decompressing the inside of the reaction furnace 14 to remove oxygen and water from the inside of the reaction furnace 14 and the semiconductor substrate 12, the second step of heating the reaction furnace 14 to further remove the oxygen and the water from the reaction furnace 14 and the semiconductor substrate 12, and the third step of purifying nitrogen gas to have the oxygen concentration to be 1 ppb or below, and performing thermal processing with the purified nitrogen gas being fed into the reaction furnace to form a nitride film 56 over the semiconductor substrate 12. The thermal nitriding is performed using an ultrahigh-purity nitrogen gas of an oxygen concentration of 1 ppb or below, whereby nitrogen film of very good quality can be formed without setting the thermal processing temperature very high.
摘要翻译：氮化膜形成方法包括将半导体衬底12加载到反应炉中的第一步骤，并且将反应炉14的内部减压以从反应炉14和半导体衬底12的内部除去氧和水，第二步骤对反应炉14进行加热以进一步从反应炉14和半导体基板12中除去氧气和水的步骤，以及将氮气净化为1ppb以下的第3工序，进行热处理纯化的氮气被进料到反应炉中以在半导体衬底12上形成氮化物膜56.使用氧浓度为1ppb或更低的超高纯度氮气进行热氮化，由此氮化膜非常可以形成良好的质量，而不会使热处理温度非常高。

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