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21. 发明申请

US20180166307A1 INTEGRATED SUBSTRATE DEFECT DETECTION USING PRECISION COATING 审中-公开
公开(公告)号：US20180166307A1
公开(公告)日：2018-06-14
申请号：US15832380
申请日：2017-12-05
申请人： Lam Research Corporation
发明人： Matthew Davis
IPC分类号： H01L21/67 , H01L21/66 , H01J37/32 , C23C16/52 , C23C16/44
CPC分类号： H01L21/67288 , C23C16/4401 , C23C16/52 , H01J37/32853 , H01J37/32889 , H01J37/32935 , H01J37/3299 , H01L22/12 , H01L22/24
摘要： Apparatuses and methods for improved substrate defect detection is provided. Substrate defects may be detected, possibly with defect detection equipment such as laser metrology equipment. Defects smaller than the detection limit of the detection equipment may be decorated with a layer of material to increase the effective sizes of the defects. The thickness and composition of the material deposited may be tuned depending on the composition of the substrate and the defects. The composition of the detected defects may be identified with defect identification equipment. The defect identification equipment may be an electron generating apparatus and the composition of the defects may be identified from the interaction of the electrons with the defect. The deposited material may be removed either before or during the defect identification phase to aid in the identification of the defect composition.

22. 发明授权

US09972776B2 Plasma processing method 有权
公开(公告)号：US09972776B2
公开(公告)日：2018-05-15
申请号：US15260351
申请日：2016-09-09
申请人： Hitachi High-Technologies Corporation
发明人： Makoto Suyama , Naohiro Yamamoto , Masato Ishimaru , Hidenori Toyooka , Norihiro Hosaka
IPC分类号： H01J37/32 , H01L43/12 , B08B9/08 , H01L43/08 , H01L43/10 , B08B7/00
CPC分类号： H01L43/12 , B08B7/0035 , B08B9/08 , H01J37/321 , H01J37/3211 , H01J37/32165 , H01J37/32651 , H01J37/32853 , H01J37/32862 , H01J2237/334 , H01J2237/335 , H01L43/08 , H01L43/10
摘要： According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.

23. 发明申请

US20170330769A1 PRECLEANING CHAMBER AND PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：US20170330769A1
公开(公告)日：2017-11-16
申请号：US15529709
申请日：2015-11-25
申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
发明人： Qing SHE , Peng CHEN , Mengxin ZHAO , Peijun DING , Kui XU , Guodong BIAN
IPC分类号： H01L21/67 , H01L21/02 , H01J37/32 , B08B7/00
CPC分类号： H01L21/67028 , B08B7/0035 , C23C16/0245 , H01J37/32082 , H01J37/321 , H01J37/32458 , H01J37/32513 , H01J37/32651 , H01J37/32834 , H01J37/32853 , H01J37/32862 , H01J2237/334 , H01L21/02046 , H01L21/67069
摘要： A precleaning chamber (100, 200, 300) and a plasma processing apparatus, comprising a cavity (20) and a dielectric window (21, 21′) disposed at the top of the cavity (20), a base (22 ) and a process assembly (24) surrounding the base (22) are disposed in the precleaning chamber (100, 200, 300), and the base (22), the process assembly (24 ) and the dielectric window (21, 21′) together form a process sub-cavity (211) above the base (22); and a space of the cavity (20) located below the base (22) is used as a loading/unloading sub-cavity (202), the precleaning chamber (100, 200, 300) further comprises a gas is device (32), the gas inlet device (32) comprises a gas inlet (323), and the gas inlet (323) is configured to directly transport a process gas into the process sub-cavity (211) from above the process assembly (24). The precleaning chamber (100, 200, 300) not only shortens the gas inlet path of the process gas, but also reach a desired plasma density under the conditions where a relatively small amount of process gas is introduced, thereby reducing the usage cost.

24. 发明申请

US20170178895A1 METHOD FOR CLEANING SUBSTRATE 审中-公开
公开(公告)号：US20170178895A1
公开(公告)日：2017-06-22
申请号：US15454134
申请日：2017-03-09
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Shih-Ping HONG , Yu-Cheng LIU
IPC分类号： H01L21/02 , H01L21/311 , B08B9/08 , H01J37/32 , B08B7/00 , H01L21/3213 , H01L21/67
CPC分类号： H01L21/02071 , B08B7/0035 , B08B9/0865 , C23C16/4405 , H01J37/3244 , H01J37/32834 , H01J37/32853 , H01J37/32862 , H01J37/32871 , H01J2237/334 , H01J2237/335 , H01L21/02041 , H01L21/0206 , H01L21/02063 , H01L21/02334 , H01L21/3065 , H01L21/31116 , H01L21/31122 , H01L21/32136 , H01L21/67069 , H01L21/76802 , H01L21/76814
摘要： A method for cleaning a substrate is provided. The method includes providing a substrate. Metal compound residues are formed over the substrate. The method includes exposing the substrate to an organic plasma to volatilize the metal compound residues. The organic plasma is generated from a gas. The gas includes an organic gas, and the organic gas is made of a hydrocarbon compound or an alcohol compound.

25. 发明授权

US09644265B2 Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer readable recording medium 有权
公开(公告)号：US09644265B2
公开(公告)日：2017-05-09
申请号：US14503707
申请日：2014-10-01
申请人： Hitachi Kokusai Electric Inc.
发明人： Takafumi Sasaki , Tetsuo Yamamoto
IPC分类号： C23C16/44 , C23C16/52 , C23C16/455 , H01L21/02 , C23C16/34 , H01J37/32
CPC分类号： C23C16/4401 , C23C16/34 , C23C16/4408 , C23C16/4412 , C23C16/45542 , C23C16/45565 , C23C16/4557 , C23C16/52 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32834 , H01J37/32853 , H01J37/32862 , H01L21/0262
摘要： Provided are a method of manufacturing semiconductor device, a substrate processing apparatus and a recording medium which are capable of efficiently removing a deposited film in a shower head and suppressing generation of particles. The method of manufacturing a semiconductor device includes (a) forming a film on a substrate by supplying a film forming gas and an inert gas to the substrate in a processing chamber via a shower head, and (b) removing a deposited film deposited in the shower head in (a) by supplying to the shower head an inert gas, which has a temperature lower than that of the inert gas supplied in (a), into the shower head without the substrate loaded in the processing chamber.

26. 发明授权

US09595448B2 Method for cleaning plasma processing chamber and substrate 有权
标题翻译：清洗等离子体处理室和基板的方法
公开(公告)号：US09595448B2
公开(公告)日：2017-03-14
申请号：US14753735
申请日：2015-06-29
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
发明人： Shih-Ping Hong , Yu-Cheng Liu
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/32 , B08B9/08 , B08B7/00 , H01L21/67 , C23C16/44
CPC分类号： H01L21/02071 , B08B7/0035 , B08B9/0865 , C23C16/4405 , H01J37/3244 , H01J37/32834 , H01J37/32853 , H01J37/32862 , H01J37/32871 , H01J2237/334 , H01J2237/335 , H01L21/02041 , H01L21/0206 , H01L21/02063 , H01L21/02334 , H01L21/3065 , H01L21/31116 , H01L21/31122 , H01L21/32136 , H01L21/67069 , H01L21/76802 , H01L21/76814
摘要： A method for cleaning a plasma processing chamber is provided. The method includes introducing an organic gas into a plasma processing chamber. The organic gas includes an organic compound including carbon and hydrogen. The method includes generating an organic plasma by exciting the organic gas. The organic plasma reacts with metal compound residues over an interior surface of the plasma processing chamber to volatilize the metal compound residues into a gaseous metal compound. The method includes removing the gaseous metal compound from the plasma processing chamber.
摘要翻译：提供了一种用于清洁等离子体处理室的方法。该方法包括将有机气体引入等离子体处理室。有机气体包括碳和氢的有机化合物。该方法包括通过激发有机气体产生有机等离子体。有机血浆与等离子体处理室的内表面上的金属化合物残留物反应，使金属化合物残留物挥发成气态金属化合物。该方法包括从等离子体处理室中除去气态金属化合物。

27. 发明授权

US09536715B2 Recycling method for tantalum coil for sputtering and tantalum coil obtained by the recycling method 有权
标题翻译：通过回收方法获得的用于溅射的钽线圈和钽线圈的回收方法
公开(公告)号：US09536715B2
公开(公告)日：2017-01-03
申请号：US14234699
申请日：2012-09-14
申请人： Shiro Tsukamoto
发明人： Shiro Tsukamoto
IPC分类号： C23C14/00 , H01J37/34 , C23C14/34 , C23C14/56 , H01J37/32
CPC分类号： H01J37/3476 , C23C14/34 , C23C14/564 , H01J37/32853 , H01J37/3288 , H01J37/34 , H01J37/3447 , Y10T29/49748
摘要： The present invention relates to a method for recycling a tantalum coil for sputtering that is disposed between a substrate and a sputtering target. The method for recycling a tantalum coil for sputtering is characterized in that the whole or partial surface of a spent tantalum coil is subject to cutting (cutting is performed until a re-deposited film and knurling traces are eliminated) so as to eliminate the re-deposited film that was formed during sputtering, and knurling is newly performed to the cut portion. While sputtered grains are accumulated (re-deposited) on the surface of the tantalum coil disposed between the substrate and the sputtering target during sputtering, by eliminating the sputtered grains accumulated on the spent coil by way of cutting after the sputtering is complete, the tantalum coil can be efficiently recycled. Thus, provided is technology capable of lean manufacturing of new coils, improving productivity, and stably providing such coils.
摘要翻译：本发明涉及设置在基板和溅射靶之间的用于再循环用于溅射的钽线圈的方法。用于再循环用于溅射的钽线圈的方法的特征在于，废钽线圈的整个或部分表面被切割（进行切割直到重新淀积的膜和滚花痕迹被消除），以便消除重新在溅射期间形成的沉积膜，并且对切割部分新进行滚花。当在溅射期间溅射的晶粒在设置在衬底和溅射靶之间的钽线圈的表面上积累（重新沉积）时，通过在溅射完成之后通过切割消除积聚在废线圈上的溅射晶粒，钽线圈可以有效回收。因此，提供了能够精密制造新线圈的技术，提高生产率并稳定地提供这种线圈。

28. 发明申请

US20160362788A1 ATOMIC LAYER DEPOSITION PROCESSING CHAMBER PERMITTING LOW-PRESSURE TOOL REPLACEMENT 审中-公开
标题翻译：原子层沉积加工室允许低压工具更换
公开(公告)号：US20160362788A1
公开(公告)日：2016-12-15
申请号：US15107878
申请日：2015-01-20
申请人： APPLIED MATERIALS, INC.
发明人： Shinichi KURITA , Jozef KUDELA , John M. WHITE , Dieter HAAS
IPC分类号： C23C16/455 , H01L51/52 , H01L51/56
CPC分类号： C23C16/45548 , C23C16/042 , C23C16/4402 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01J37/32467 , H01J37/32513 , H01J37/32715 , H01J37/32834 , H01J37/32853 , H01J37/32899 , H01J2237/327 , H01J2237/3321 , H01L21/6719 , H01L21/67748 , H01L21/67751 , H01L21/68742 , H01L51/0011 , H01L51/5237 , H01L51/5253 , H01L51/56
摘要： The present disclosure relates to methods and apparatus for an atomic layer deposition (ALD) processing chamber for device fabrication and methods for replacing a gas distribution plate and mask of the same. The ALD processing chamber has a slit valve configured to allow removal and replacement of a gas distribution plate and mask. The ALD processing chamber may also have actuators operable to move the gas distribution plate to and from a process position and a substrate support assembly operable to move the mask to and from a process position.
摘要翻译：本公开涉及用于器件制造的原子层沉积（ALD）处理室的方法和装置以及用于替换气体分布板及其掩模的方法。 ALD处理室具有狭缝阀，其构造成允许气体分配板和掩模的移除和更换。 ALD处理室还可以具有可操作以将气体分配板移动到过程位置和从处理位置移动的致动器和可操作以将掩模移动到过程位置和从处理位置移动掩模的基板支撑组件。

29. 发明授权

US09428833B1 Method and apparatus for backside deposition reduction by control of wafer support to achieve edge seal 有权
标题翻译：用于通过控制晶片支撑来实现边缘密封的背面沉积减少的方法和装置
公开(公告)号：US09428833B1
公开(公告)日：2016-08-30
申请号：US14726055
申请日：2015-05-29
申请人： Lam Research Corporation
发明人： Andrew Duvall , Chloe Baldasseroni
IPC分类号： H01L21/31 , C23C16/455 , C23C16/52 , C23C16/458 , H01L21/02 , H01L21/285 , H01L21/67
CPC分类号： H01L21/67 , C23C16/4409 , C23C16/4584 , C23C16/4585 , C23C16/4586 , H01J37/32449 , H01J37/32513 , H01J37/32715 , H01J37/32853 , H01L21/68735 , H01L21/6875 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： Method and apparatus for reducing backside deposition by controlling one or more wafer supports are disclosed. A processing chamber, such as a processing chamber for atomic layer deposition, can include a pedestal and one or more wafer supports configured to extend from the pedestal. A wafer can be provided over the pedestal, the one or more wafer supports can contact the backside of the wafer to support the wafer, and the one or more wafer supports can be positioned to a height to cause an outer edge of the wafer to sag. The outer edge of the wafer can sag to substantially contact the pedestal or a carrier ring surrounding the pedestal. This can create an edge seal to limit access by process gases to the backside of the wafer during a deposition process.
摘要翻译：公开了通过控制一个或多个晶片支撑件来减少背面沉积的方法和装置。诸如用于原子层沉积的处理室的处理室可以包括基座和被配置为从基座延伸的一个或多个晶片支撑件。晶片可以设置在基座上方，一个或多个晶片支撑件可以接触晶片的背面以支撑晶片，并且一个或多个晶片支撑件可以被定位到一定高度，以使晶片的外边缘下垂。晶片的外边缘可以下垂以基本上接触基座或围绕基座的承载环。这可以产生边缘密封，以在沉积过程中限制通过工艺气体进入晶片背面的边缘。

30. 发明申请

US20160225586A1 PLASMA TREATING APPARATUS, SUBSTRATE TREATING METHOD, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20160225586A1
公开(公告)日：2016-08-04
申请号：US15095338
申请日：2016-04-11
申请人： SUNGHO KANG , Sunyoung LEE , Jaehee LEE , HAN KI LEE , GEUNKYU CHOI
发明人： SUNGHO KANG , Sunyoung LEE , Jaehee LEE , HAN KI LEE , GEUNKYU CHOI
IPC分类号： H01J37/32
CPC分类号： H01J37/32192 , H01J37/3244 , H01J37/32853 , H01J2237/332 , H01J2237/334 , H01J2237/335 , H01L21/0262 , H01L21/302 , H01L21/31058 , H01L21/324 , H01L21/3247
摘要： A substrate treating method may be performed by a plasma treating apparatus. The substrate treating method may include: providing a substrate on a platform in a lower portion of an inner space of a process chamber; directing a first process gas upward from a first nozzle formed at an inner wall of the process chamber into an upper portion of the inner space, the first process gas being an inert gas and wherein the first nozzle is an obliquely upward-oriented nozzle structured to direct the first process gas upward; directing a second process gas downward from a second nozzle formed at a inner wall of the process chamber into a lower portion of the inner space, the second process gas being hydrogen gas and wherein the second nozzle is an obliquely downward-oriented nozzle structured to direct the second process gas downward; and applying a microwave to the upper portion of the inner space to excite the first process gas and the second process gas into plasma, and then processing the substrate.

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