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21. 发明授权

US09147527B2 Variable capacity composite component 有权
标题翻译：可变容量复合组件
公开(公告)号：US09147527B2
公开(公告)日：2015-09-29
申请号：US14081863
申请日：2013-11-15
申请人： TAIYO YUDEN CO., LTD.
发明人： Tomokazu Ikenaga , Daiki Ishii
IPC分类号： H01G7/06 , H01L49/02 , H01G4/33 , H01G4/38
CPC分类号： H01G7/06 , H01G4/33 , H01G4/38 , H01L28/55
摘要： A variable capacity composite component has structures connecting four variable capacitors, for example, to signal terminals in series with bias application terminals of opposite polarities facing each other, connecting a power supply terminal to the bias+ sides of the first and second variable capacitors via a first bias resistance, and also to the bias+ sides of the third and fourth variable capacitors via a second bias resistance, connecting a grounding terminal to the bias− side of the first variable capacitor via a third bias resistance, also to the bias− sides of the second and third variable capacitors via a fourth bias resistance, and also to the bias−sides of the fourth variable capacitor via a fifth bias resistance, and setting the value of the first, second, and fourth bias resistances to one-half the value of the third and fifth bias resistances.
摘要翻译：可变容量复合部件具有连接四个可变电容器的结构，例如，将信号端子与彼此相对极性的偏置施加端子串联连接，通过第一和第二可变电容器将电源端子连接到第一和第二可变电容器的偏压+侧并且还通过第二偏置电阻连接到第三和第四可变电容器的偏压+侧，经由第三偏置电阻将接地端子连接到第一可变电容器的偏置侧，也连接到第二可变电容器的偏置侧经由第四偏置电阻的第二和第三可变电容器，以及经由第五偏置电阻到第四可变电容器的偏置侧，并且将第一，第二和第四偏置电阻的值设置为第二，第二和第四偏置电阻的值的一半第三和第五偏置电阻。

22. 发明申请

US20150092315A1 TUNABLE MEMS CAPACITOR 有权
标题翻译：可控MEMS电容器
公开(公告)号：US20150092315A1
公开(公告)日：2015-04-02
申请号：US14543146
申请日：2014-11-17
申请人： NXP B.V.
发明人： PETER G. STEENEKEN , KLAUS REIMANN
IPC分类号： H01G5/16 , H01G7/06 , H01G5/013
CPC分类号： H01G5/16 , H01G5/013 , H01G5/0136 , H01G7/06 , H01G2005/02 , H03J5/248
摘要： A capacitive MEMS structure comprising first and second opposing capacitor electrode arrangements, wherein at least one of the electrode arrangements is movable, and a dielectric material located adjacent to the second electrode arrangement, wherein the second electrode arrangement is patterned such that it includes electrode areas and spaces adjacent to the electrode areas, and wherein the dielectric material extends at least partially in or over the spaces.
摘要翻译：一种电容MEMS结构，包括第一和第二相对电容器电极布置，其中至少一个电极布置是可移动的，以及位于第二电极布置附近的介电材料，其中第二电极布置被图案化，使得其包括电极区域和与电极区域相邻的空间，并且其中电介质材料至少部分地在空间中或上方延伸。

23. 发明申请

US20150022281A1 Capacitors Adapted for Acoustic Resonance Cancellation 有权
标题翻译：适应声共振取消的电容器
公开(公告)号：US20150022281A1
公开(公告)日：2015-01-22
申请号：US14509352
申请日：2014-10-08
申请人： BlackBerry Limited
发明人： James Oakes , James Martin , Andery Kozyrev , Alexandr Prudan
IPC分类号： H01G7/06 , H03H7/38
CPC分类号： H01G5/00 , H01G7/06 , H03H7/38
摘要： An embodiment of the present invention provides a method, comprising reducing the losses due to electro-mechanical coupling and improving Q in a multilayered capacitor by placing a first capacitor layer adjacent at least one additional capacitor layer and sharing a common electrode in between the two such that the acoustic vibration of the first layer is coupled to an anti-phase acoustic vibration of the at least one additional layer.
摘要翻译：本发明的一个实施例提供了一种方法，其包括减少由于机电耦合引起的损耗并通过将第一电容器层放置在邻近至少一个附加电容器层并且在两个之间共享公共电极的同时改善多层电容器中的Q 第一层的声振动耦合到至少一个附加层的抗相声振动。

24. 发明授权

US08891227B2 Process of forming dielectric thin film and thin film capacitor having said dielectric thin film 有权
标题翻译：形成具有所述介电薄膜的电介质薄膜和薄膜电容器的工艺
公开(公告)号：US08891227B2
公开(公告)日：2014-11-18
申请号：US13393908
申请日：2010-09-02
申请人： Hideaki Sakurai , Toshiaki Watanabe , Nobuyuki Soyama
发明人： Hideaki Sakurai , Toshiaki Watanabe , Nobuyuki Soyama
IPC分类号： H01G4/06 , C01G23/00 , C04B35/624 , C04B35/47 , H01G4/12 , H01L21/02 , C04B35/468 , H01G7/06 , H01G4/33 , H01L49/02
CPC分类号： C04B35/624 , C01G23/006 , C04B35/4686 , C04B35/47 , C04B2235/441 , C04B2235/6562 , H01G4/1227 , H01G4/33 , H01G7/06 , H01L21/02197 , H01L21/02282 , H01L28/55 , Y10T29/435 , Y10T428/2495
摘要： In this process of forming a dielectric thin film, when a dielectric thin film represented by Ba1−xSrxTiyO3 (0.2
摘要翻译：在形成电介质薄膜的方法中，当通过溶胶 - 凝胶法形成由Ba1-xSrxTiyO3（0.2

25. 发明授权

US08848336B2 Perovskite material with anion-controlled dielectric properties, thin film capacitor device, and method for manufacturing the same 有权
标题翻译：具有阴离子控制介电特性的钙钛矿材料，薄膜电容器装置及其制造方法
公开(公告)号：US08848336B2
公开(公告)日：2014-09-30
申请号：US13616908
申请日：2012-09-14
申请人： Ivoyl Koutsaroff , Shinichi Higai , Akira Ando
发明人： Ivoyl Koutsaroff , Shinichi Higai , Akira Ando
IPC分类号： H01G4/06 , H01L49/02 , H01B3/10 , C01G23/00 , H01L21/02 , H01G7/06
CPC分类号： H01G4/085 , C01G23/006 , C01P2002/34 , C01P2002/52 , C01P2002/54 , C01P2006/40 , C23C14/34 , H01B3/10 , H01G4/008 , H01G4/10 , H01G4/33 , H01G7/06 , H01L21/02197 , H01L21/02266 , H01L28/56
摘要： A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3− anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3-δ)α-(ABO3-δ-γNγ)1-α. A represents a divalent element, B represents a tetravalent element, γ satisfies 0.005≦γ≦1.0, 1-α satisfies 0.05≦1-α≦0.9, and 1-α is an area ratio between the regions containing rich N3− anions and the matrix of remaining oxide perovskite material.
摘要翻译：结晶钙钛矿结晶复合对电材料包括分散在结晶氧化物钙钛矿材料的纳米晶粒尺寸基质中的富N3阴离子的纳米区域，其中（ABO3-δ）α-（ABO3-δ-γNγ）1-α。 A表示二价元素，B表示四价元素，γ满足0.005＆nlE;γ＆nlE; 1.0,1-α满足0.05＆nlE; 1-α＆nlE; 0.9，1-α是含有富N3-阴离子的区域之间的面积比和剩余氧化物钙钛矿材料的基体。

26. 发明申请

US20140268481A1 COMPLEX OXIDE, THIN-FILM CAPACITIVE ELEMENT, LIQUID DROPLET DISCHARGE HEAD, AND METHOD OF PRODUCING COMPLEX OXIDE 有权
标题翻译：复合氧化物，薄膜电容元件，液滴放电头和生产复合氧化物的方法
公开(公告)号：US20140268481A1
公开(公告)日：2014-09-18
申请号：US14183707
申请日：2014-02-19
申请人： Yoshikazu AKIYAMA , Xianfeng CHEN
发明人： Yoshikazu AKIYAMA , Xianfeng CHEN
IPC分类号： H01G4/14 , H01G5/013 , B05B17/06 , C01F11/04
CPC分类号： H01G7/06 , B05B17/0661 , H01L41/0805 , H01L41/0973 , H01L41/1871 , H01L41/317
摘要： A complex oxide includes a chemical compound represented by ABO3 (Chemical Formula 1). In the Chemical Formula 1, A is one or more elements selected from Ba, Ca, and Sr; and B is one or more elements selected from Ti, Zr, Hf, and Sn. When a field having a size of 1 μm×1 μm on a surface of the complex oxide is observed with an atomic force microscope (AFM), a typical particle size is greater than or equal to 300 nm and less than 660 nm. Here, the typical particle size is a maximum length of a maximum particle observed in the field.
摘要翻译：复合氧化物包括由ABO 3（化学式1）表示的化合物。在化学式1中，A是选自Ba，Ca和Sr中的一种或多种元素; B是选自Ti，Zr，Hf和Sn中的一种或多种元素。当用原子力显微镜（AFM）观察到在复合氧化物的表面上具有1μm×1μm的尺寸的场时，典型的粒径大于或等于300nm且小于660nm。这里，典型的粒径是在现场观察到的最大粒子的最大长度。

27. 发明申请

US20140247534A1 ELECTROSTATIC CAPACITANCE ELEMENT AND RESONANCE CIRCUIT 审中-公开
标题翻译：静电电容元件和谐振电路
公开(公告)号：US20140247534A1
公开(公告)日：2014-09-04
申请号：US14349585
申请日：2012-10-02
申请人： Sonny Corporation
发明人： Noritaka Sato , Masayoshi Kanno
IPC分类号： H01G7/00
CPC分类号： H01G7/00 , H01G4/12 , H01G4/232 , H01G4/30 , H01G7/06
摘要： There is provide an electrostatic capacitance element including a dielectric layer, a capacitance element body configured to include at least a pair of internal electrodes formed with the dielectric layer interposed therebetween, and an external terminal configured to be formed on a side surface of the capacitance element body and electrically connected to the internal electrode. Further, stress occurring due to a difference in a linear expansion coefficient between the dielectric layer and the internal electrode is concentrated on a center of a capacitor configured with the dielectric layer and the pair of internal electrodes between which the dielectric layer is interposed.
摘要翻译：提供一种静电电容元件，其包括电介质层，电容元件体，其被配置为包括至少一对形成有介电层的内部电极和设置在电容元件的侧表面上的外部端子并与内部电极电连接。此外，由于电介质层和内部电极之间的线性膨胀系数的差异而产生的应力集中在由电介质层和介于其间的一对内部电极构成的电容器的中心。

28. 发明申请

US20140139968A1 VARIABLE CAPACITY COMPOSITE COMPONENT 有权
标题翻译：可变容量复合组件
公开(公告)号：US20140139968A1
公开(公告)日：2014-05-22
申请号：US14081863
申请日：2013-11-15
申请人： Taiyo Yuden Co., Ltd.
发明人： Tomokazu IKENAGA , Daiki ISHII
IPC分类号： H01G7/00
CPC分类号： H01G7/06 , H01G4/33 , H01G4/38 , H01L28/55
摘要： A variable capacity composite component has structures connecting four variable capacitors, for example, to signal terminals in series with bias application terminals of opposite polarities facing each other, connecting a power supply terminal to the bias+ sides of the first and second variable capacitors via a first bias resistance, and also to the bias+ sides of the third and fourth variable capacitors via a second bias resistance, connecting a grounding terminal to the bias− side of the first variable capacitor via a third bias resistance, also to the bias− sides of the second and third variable capacitors via a fourth bias resistance, and also to the bias− sides of the fourth variable capacitor via a fifth bias resistance, and setting the value of the first, second, and fourth bias resistances to one-half the value of the third and fifth bias resistances.
摘要翻译：可变容量复合部件具有连接四个可变电容器的结构，例如，将信号端子与彼此相对极性的偏置施加端子串联连接，通过第一和第二可变电容器将电源端子连接到第一和第二可变电容器的偏压+侧并且还通过第二偏置电阻连接到第三和第四可变电容器的偏压+侧，经由第三偏置电阻将接地端子连接到第一可变电容器的偏置侧，也连接到第二可变电容器的偏置侧经由第四偏置电阻的第二和第三可变电容器，以及经由第五偏置电阻到第四可变电容器的偏置侧，并且将第一，第二和第四偏置电阻的值设置为第二，第二和第四偏置电阻的值的一半第三和第五偏置电阻。

29. 发明授权

US08722537B2 Multi-sacrificial layer and method 有权
标题翻译：多牺牲层和方法
公开(公告)号：US08722537B2
公开(公告)日：2014-05-13
申请号：US12686878
申请日：2010-01-13
申请人： Yao-Te Huang , Chia-Hua Chu , Yu-Nu Hsu , Chun-Wen Cheng , Li-Chung Peng
发明人： Yao-Te Huang , Chia-Hua Chu , Yu-Nu Hsu , Chun-Wen Cheng , Li-Chung Peng
IPC分类号： H01L21/44
CPC分类号： H01G7/06 , B81B2201/0221 , B81C1/0015 , B81C2201/0109 , H01G7/00 , H01L28/60
摘要： MEMS devices and methods for utilizing sacrificial layers are provided. An embodiment comprises forming a first sacrificial layer and a second sacrificial layer over a substrate, wherein the second sacrificial layer acts as an adhesion layer. Once formed, the first sacrificial layer and the second sacrificial layer are patterned such that the second sacrificial layer is undercut to form a step between the first sacrificial layer and the second sacrificial layer. A top capacitor electrode is formed over the second sacrificial layer, and the first sacrificial layer and the second sacrificial layer are removed in order to free the top capacitor electrode.
摘要翻译：提供了用于利用牺牲层的MEMS器件和方法。一个实施例包括在衬底上形成第一牺牲层和第二牺牲层，其中第二牺牲层用作粘附层。一旦形成，第一牺牲层和第二牺牲层被图案化，使得第二牺牲层被底切以在第一牺牲层和第二牺牲层之间形成台阶。在第二牺牲层上形成顶部电容器电极，并且去除第一牺牲层和第二牺牲层以便释放顶部电容器电极。

30. 发明申请

US20140063689A1 DIELECTRIC MATERIAL TO ENHANCE CAPACITANCE OF A CAPACITOR 审中-公开
标题翻译：电介质材料，以提高电容器的电容
公开(公告)号：US20140063689A1
公开(公告)日：2014-03-06
申请号：US14016935
申请日：2013-09-03
申请人： CHRISTOPHER LORNE BLAIR
发明人： CHRISTOPHER LORNE BLAIR
IPC分类号： H01G4/06
CPC分类号： H01G4/06 , B82Y30/00 , B82Y99/00 , H01G7/025 , H01G7/028 , H01G7/06
摘要： A dielectric material suitable for use between electrodes of a capacitor includes dipole-impregnated fullerenes able to increase a dielectric constant of the dielectric material in order to enhance the energy storage capacity of the capacitor is provided. The dielectric material includes buckminsterfullerenes each having a dipole molecule impregnated within the buckminsterfullerene, the dipole molecules within the buckminsterfullerenes able to rotate and align with forces of an electric field when in the presence of the electric field so that, when in use between the electrodes of the capacitor, they counteract the electric field between the electrodes and increase the energy storage capacity of the capacitor.
摘要翻译：适用于电容器的电极之间的电介质材料包括偶极浸渍的富勒烯，其能够增加电介质材料的介电常数，以提高电容器的储能能力。电介质材料包括每个具有浸渍在buckminsterfullerene内的偶极子分子的buckminsterfulleren，当存在电场时，buckminsterfullerenes内的偶极子分子能够旋转并与电场的力对准，使得当在电极之间使用时电容器，它们抵消电极之间的电场并增加电容器的储能能力。

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