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21. 发明授权

US08351164B2 Magnetoresistive element having free and/or pinned layer magnetic compound expressed by M1M2O 有权
标题翻译：具有由M1M2O表示的游离和/或钉扎层磁性化合物的磁阻元件
公开(公告)号：US08351164B2
公开(公告)日：2013-01-08
申请号：US13454846
申请日：2012-04-24
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
IPC分类号： G11B5/39 , G11C11/16
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11C11/161 , H01F10/187 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , Y10T428/1121
摘要： An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer. At least one of the first magnetic layer and the second magnetic layer includes a magnetic compound layer including a magnetic compound that is expressed by M1aM2bOc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, and Cr.
摘要翻译：示例性磁阻元件包括其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 和间隔层。第一磁性层和第二磁性层中的至少一个包括由M1aM2bOc（其中5和nlE; a＆nlE; 68,10和nlE; b＆nlE; 73和22＆nlE; c＆nlE; 85）表示的磁性化合物的磁性化合物层。 M1是选自Co，Fe和Ni中的至少一种元素。 M2是选自Ti，V和Cr中的至少一种元素。

22. 发明申请

US20120280773A1 Magnetoresistive Shield with Coupled Lateral Magnet Bias 有权
标题翻译：具有耦合横向磁体偏置的磁阻屏蔽
公开(公告)号：US20120280773A1
公开(公告)日：2012-11-08
申请号：US13102714
申请日：2011-05-06
申请人： Eric W. Singleton , Junjie Quan , Shaun E. McKinlay
发明人： Eric W. Singleton , Junjie Quan , Shaun E. McKinlay
IPC分类号： H01F7/00
CPC分类号： G01R33/0076 , G01R33/0047 , G01R33/025 , G11B5/3163 , G11B5/3912 , G11B5/3932 , G11B5/398 , H01F10/187 , H01F10/3254
摘要： In accordance with various embodiments, a magnetic shield for a magnetoresistive (MR) element has one or more lateral hard magnets and a coupling layer contactingly adjacent both the MR element and the hard magnet. The coupling layer concurrently magnetically decouples the MR element while magnetically coupling the hard magnet.
摘要翻译：根据各种实施例，用于磁阻（MR）元件的磁屏蔽具有一个或多个横向硬磁体和与MR元件和硬磁体接触接触的耦合层。耦合层同时在磁耦合硬磁体的同时磁耦合MR元件。

23. 发明申请

US20120280337A1 Composite free layer within magnetic tunnel junction for MRAM applications 有权
标题翻译：用于MRAM应用的磁性隧道结内的复合自由层
公开(公告)号：US20120280337A1
公开(公告)日：2012-11-08
申请号：US13068222
申请日：2011-05-05
申请人： Wei Cao , Witold Kula
发明人： Wei Cao , Witold Kula
IPC分类号： H01L29/82 , H01L21/8239
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/161 , H01F10/187 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12
摘要： A MTJ in an MRAM array is disclosed with a composite free layer having a FL1/FL2/FL3 configuration where FL1 and FL2 are crystalline magnetic layers and FL3 is an amorphous NiFeX layer for improved bit switching performance. FL1 layer is CoFe which affords a high magnetoresistive (MR) ratio when forming an interface with a MgO tunnel barrier. FL2 is Fe to improve switching performance. NiFeX thickness where X is Hf is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. Annealing at 330° C. to 360° C. provides a high MR ratio of 190%. Furthermore, low Hc and Hk are simultaneously achieved with improved bit switching performance and fewer shorts without compromising other MTJ properties such as MR ratio. As a result of high MR ratio and lower bit-to-bit resistance variation, higher reading margin is realized.
摘要翻译：公开了一种具有FL1 / FL2 / FL3配置的复合自由层的MRAM阵列，其中FL1和FL2是结晶磁性层，FL3是非晶NiFeX层，用于改善位切换性能。 FL1层是当与MgO隧道势垒形成界面时提供高磁阻（MR）比的CoFe。 FL2是Fe提高开关性能。其中X为Hf的NiFeX厚度优选在20至40埃之间，以显着降低位线切换电流和短路位数。在330℃至360℃退火提供190％的高MR比。此外，低Hc和Hk同时实现，具有改进的位切换性能和更短的短路，而不会影响其他MTJ特性，例如MR比。由于高MR比和较低的比特电阻变化，实现了更高的读取余量。

24. 发明申请

US20090058750A1 HIGH-FREQUENCY MAGNETIC MATERIAL AND ANTENNA DEVICE USING THEREOF 审中-公开
标题翻译：高频磁性材料及其使用的天线装置
公开(公告)号：US20090058750A1
公开(公告)日：2009-03-05
申请号：US12174016
申请日：2008-07-16
申请人： Tomoko EGUCHI , Maki Yonetsu , Naoyuki Nakagawa , Seiichi Suenaga
发明人： Tomoko EGUCHI , Maki Yonetsu , Naoyuki Nakagawa , Seiichi Suenaga
IPC分类号： H01F7/02 , H01Q1/00
CPC分类号： H01Q15/0086 , B82Y25/00 , B82Y40/00 , H01F10/131 , H01F10/187 , H01F10/265 , H01F41/30 , H01F41/34 , H01Q1/38
摘要： A superior high-frequency magnetic material having a smaller ratio (μ″/μ′) of the real part μ′ of permeability and the imaginary part μ″ of permeability in a high-frequency region and an antenna device using thereof are provided. The high-frequency magnetic material includes a substrate and a composite magnetic film formed on the substrate that consists of a magnetic phase forming a plurality of columnar bodies whose longitudinal direction is directed in a direction perpendicular to a surface of the substrate and an insulator phase filling gaps of the columnar bodies, and the magnetic phase is amorphous and has in-plane uniaxial anisotropy of Hk2/Hk1≧3 and Hk2≧3.98×103 A/m when a minimal anisotropic magnetic field in a plane in parallel with the surface of the substrate is Hk1 and a maximal anisotropic magnetic field is Hk2.
摘要翻译：提供了高频区域的导磁率的实部μ'和导磁率的虚部μ“与使用它们的天线装置的比率（μ”/μ“）较高的高频磁性材料。高频磁性材料包括基板和形成在基板上的复合磁性膜，所述复合磁性膜由形成多个柱状体的磁相组成，所述多个柱状体的纵向方向指向垂直于所述基板的表面的方向，绝缘体相填充柱状体的间隙和磁性相是非晶的，并且当与平行于表面的平面中的最小各向异性磁场时，具有Hk2 / Hk1> = 3和Hk2> = 3.98×103A / m的面内单轴各向异性基板为Hk1，最大各向异性磁场为Hk2。

25. 发明申请

US20060077597A1 Magnetic detector including antiferromagnetic layer, amorphous barrier layer, base layer, and hard layer arranged in that order and method for manufacturing magnetic detector 失效
标题翻译：磁性检测器，包括反铁磁性层，非晶形阻挡层，基层，以及按顺序布置的硬质层以及用于制造磁检测器的方法
公开(公告)号：US20060077597A1
公开(公告)日：2006-04-13
申请号：US11249751
申请日：2005-10-04
申请人： Kenichi Tanaka , Eiji Umetsu , Masahiro Oshima , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Masahiro Oshima , Naoya Hasegawa
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： H01F10/3277 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3932 , H01F10/187 , H01F41/308 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048
摘要： A multilayer film is placed on a substrate. The multilayer film includes an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic material layer, and a free magnetic layer. The multilayer film has recessed sections arranged in both side regions thereof, the recessed sections being formed by partly removing the multilayer film in a vacuum. The bottoms of the recessed sections are located between the upper face and lower face of the antiferromagnetic layer. Amorphous barrier layers with a thickness of Å are placed on the bottoms of the recessed sections, the amorphous barrier layers being formed in the same vacuum as that for forming the recessed sections sequentially to the step of forming the recessed sections.
摘要翻译：将多层膜放置在基板上。多层膜包括反铁磁层，钉扎磁性层，非磁性材料层和自由磁性层。多层膜具有布置在其两侧区域中的凹部，凹部通过在真空中部分去除多层膜而形成。凹陷部分的底部位于反铁磁层的上表面和下表面之间。厚度为10〜32的无定形阻挡层被放置在凹部的底部，与形成凹部的工序相同地形成与用于形成凹部的非晶形阻挡层相同的真空。

26. 发明授权

US06238492B1 Soft magnetic thin film, method for preparing same and magnetic head 失效
标题翻译：软磁薄膜，制备方法及磁头
公开(公告)号：US06238492B1
公开(公告)日：2001-05-29
申请号：US08957791
申请日：1997-10-24
申请人： Kanji Nakanishi , Osamu Shimizu , Satoshi Yoshida , Masaaki Katayama , Tatsuya Isomura
发明人： Kanji Nakanishi , Osamu Shimizu , Satoshi Yoshida , Masaaki Katayama , Tatsuya Isomura
IPC分类号： H01F1147
CPC分类号： G11B5/21 , G11B5/147 , G11B5/1878 , G11B5/31 , G11B5/3109 , G11B5/313 , G11B5/3186 , H01F1/15308 , H01F10/131 , H01F10/147 , H01F10/187 , H01F10/265
摘要： A soft magnetic thin micro-crystalline film of FeaTbNc (at %) wherein T is at least one of Zr, Hf, Ti, Nb, Ta, V, Mo, and W and 0
摘要翻译： FeaTbNc（at％）的软磁性薄型微晶薄膜，其中T为Zr，Hf，Ti，Nb，Ta，V，Mo和W中的至少一种，0

27. 发明授权

US6140902A Thin magnetic element and transformer 失效
标题翻译：薄磁元件和变压器
公开(公告)号：US6140902A
公开(公告)日：2000-10-31
申请号：US904058
申请日：1997-07-31
申请人： Kiyohito Yamasawa , Yasuo Hayakawa , Takashi Hatanai , Akihiro Makino , Yutaka Naito , Naoya Hasegawa
发明人： Kiyohito Yamasawa , Yasuo Hayakawa , Takashi Hatanai , Akihiro Makino , Yutaka Naito , Naoya Hasegawa
IPC分类号： H01F10/14 , H01F10/187 , H01F17/00 , H01F27/30
CPC分类号： H01F10/187 , H01F17/0006 , H01F2017/0066
摘要： A thin magnetic element which comprises a coil pattern formed on at least one side of a substrate and a thin magnetic film formed on the coil pattern, wherein:said thin magnetic film is for++med to a thickness of 0.5 .mu.m or greater but 8 .mu.m or smaller;and at least one of the following conditions, that is, assuming that the thickness and width of a coil conductor constituting the coil pattern are t and a, respectively, an aspect ratio t/a of the coil conductor satisfies the following relationship: 0.035.ltoreq.t/a.ltoreq.0.35;and assuming that the width of the conductor constituting the coil pattern is a and the distance between the mutually adjacent coil conductors in the coil pattern is b, the following relationship: 0.2.ltoreq.a/(a+b) is satisfied.
摘要翻译：一种薄磁性元件，其包括形成在基板的至少一侧的线圈图案和形成在线圈图案上的薄磁膜，其中：所述薄磁膜用于++ med至0.5μm或更大的厚度，但是 8亩以下; 以及以下条件中的至少一个，即构成线圈图案的线圈导体的厚度和宽度分别为t和a，线圈导体的纵横比t / a满足以下关系：0.035 < /=t/a

28. 发明授权

US4271232A Amorphous magnetic film 失效
标题翻译：非晶磁性膜
公开(公告)号：US4271232A
公开(公告)日：1981-06-02
申请号：US937686
申请日：1978-08-28
申请人： Neil D. Heiman , Robert L. White , Robert I. Potter , Paul A. Albert
发明人： Neil D. Heiman , Robert L. White , Robert I. Potter , Paul A. Albert
IPC分类号： C23C14/14 , C22C45/02 , C23C14/06 , G11B5/64 , G11B5/65 , H01F10/13 , H01F10/18 , H01F10/187 , H01F41/18
CPC分类号： C23C14/0641 , H01F10/131 , H01F10/187 , H01F41/18 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： A magnetic material of amorphous iron-nitride and a method for preparing the same are provided.
摘要翻译：提供非晶态氮化铁的磁性材料及其制备方法。

29. 发明授权

US3681245A Euo films with enhanced magnetic exchange 失效
标题翻译：具有增强磁性交换的EUO膜
公开(公告)号：US3681245A
公开(公告)日：1972-08-01
申请号：US3681245D
申请日：1970-12-10
申请人： IBM
发明人： LEE KENNETH
IPC分类号： H01F1/03 , H01F10/187 , C04B35/50
CPC分类号： H01F10/187 , H01F1/0313
摘要： A FERROMAGNETIC COMPOSITION CONSISTING ESSENTIALLY OF EUO DOPED WITH EXCESS EU AND A MONOVALENT METAL CHOSEN FROM THE GROUP CONSISTING OF AG, CU, AU, NA, K, IN. BY SUCH DROPING, THE CURIE POINT OF EUO IS RAISED FROM 77*K. TO 150*K., WITH AN INCRESE IN THE ELECTRICAL RESISTIVITY AS WELL

30. 发明授权

US08711525B2 Magnetoresistive shield with coupled lateral magnet bias 有权
标题翻译：具有耦合横向磁体偏置的磁阻屏蔽
公开(公告)号：US08711525B2
公开(公告)日：2014-04-29
申请号：US13102714
申请日：2011-05-06
申请人： Eric W. Singleton , Junjie Quan , Shaun E. McKinlay
发明人： Eric W. Singleton , Junjie Quan , Shaun E. McKinlay
IPC分类号： G11B5/39
CPC分类号： G01R33/0076 , G01R33/0047 , G01R33/025 , G11B5/3163 , G11B5/3912 , G11B5/3932 , G11B5/398 , H01F10/187 , H01F10/3254
摘要： In accordance with various embodiments, at least one magnetic shield for a magnetoresistive (MR) element has one or more lateral hard magnets and a coupling layer contactingly adjacent both the MR element and the hard magnet. The coupling layer concurrently magnetically decouples the MR element while magnetically coupling the hard magnet.
摘要翻译：根据各种实施例，用于磁阻（MR）元件的至少一个磁屏蔽具有一个或多个横向硬磁体和与MR元件和硬磁体接触接触的耦合层。耦合层同时在磁耦合硬磁体的同时磁耦合MR元件。

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