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21. 发明授权

US09558767B2 Current-perpendicular-to-plane magneto-resistance effect element 有权
标题翻译：电流 - 垂直于平面的磁阻效应元件
公开(公告)号：US09558767B2
公开(公告)日：2017-01-31
申请号：US14774987
申请日：2014-04-02
申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE
发明人： Ye Du , Takao Furubayashi , Yukiko Takahashi , Kazuhiro Hono
IPC分类号： G11B5/127 , G11B5/39 , H01L43/08 , H01L43/10 , B82Y10/00 , G01R33/09 , G11B5/09
CPC分类号： G11B5/3932 , B82Y10/00 , G01R33/093 , G11B5/09 , G11B5/1278 , G11B5/39 , G11B5/3906 , G11B2005/3996 , H01L43/08 , H01L43/10
摘要： The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.
摘要翻译：本发明的CPPGMR元件具有形成在基板11上以将Heusler合金构造成（100）方向的取向层12，作为层叠在取向层12上的用于磁电阻测量的电极的下层13，每个层叠在下层13上并由Heusler合金制成的下铁磁层14和上铁磁层16，夹在下铁磁层14和上铁磁层16之间的间隔层15和堆叠在其上的盖层17 用于表面保护的上铁磁层16。这种方式使得可以廉价地提供使用具有铁磁金属/非磁性金属/铁磁性金属的三层结构的薄膜的电流 - 垂直于平面的巨磁阻效应（CPPGMR）的元件，从而表现出优异的表现。

22. 发明授权

US09529060B2 Magnetoresistance element with improved response to magnetic fields 有权
标题翻译：具有改善磁场响应的磁阻元件
公开(公告)号：US09529060B2
公开(公告)日：2016-12-27
申请号：US14452783
申请日：2014-08-06
申请人： Allegro MicroSystems, LLC
发明人： Claude Fermon , Myriam Pannetier-Lecoeur , Marie-Claire Cyrille , Cyril Dressler , Paolo Campiglio
IPC分类号： H01L43/08 , G01R33/09 , G01R33/00 , G11B5/39 , H01L43/02 , H01L43/10 , H01L43/12 , H01F10/32 , H01F41/30
CPC分类号： G11B5/3932 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , G11B5/39 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/3263 , H01F10/3272 , H01F41/306 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/41
摘要： A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.
摘要翻译：磁阻元件具有双重固定布置，其具有两个反铁磁钉扎层，两个钉扎层和自由层。两个反铁磁钉扎层之一和自由层之间的间隔层具有被选择为允许两个反铁磁钉扎层中的一个的可控部分钉扎的材料。

23. 发明授权

US09489970B2 Magnetic head and magnetic recording and reproducing apparatus 有权
公开(公告)号：US09489970B2
公开(公告)日：2016-11-08
申请号：US14927549
申请日：2015-10-30
申请人： Kabushiki Kaisha Toshiba
发明人： Yousuke Isowaki , Kenichiro Yamada , Masayuki Takagishi
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G11B5/3932 , G11B5/3954 , G11B5/398
摘要： A magnetic head of an embodiment includes a stack, side shields, and a first and a second magnetic shield. The stack includes a pin layer having a fixed magnetization direction, a first free layer having a magnetization direction to change in accordance with an external magnetic field, a second free layer antiferromagnetically exchange-coupled with the first free layer and having a magnetization direction to change in accordance with the field, and an antiferromagnetic layer exchange-coupled with the second free layer. A magnetic field is applied from the side shields to the first and second free layers, and a direction of the magnetic field is substantially parallel to the magnetization direction of one of the first and second free layers and substantially antiparallel to the magnetization direction of the other, and a magnetic volume of the one is larger than a magnetic volume of the other.

24. 发明授权

US09472214B1 Reader side shield 有权
标题翻译：读卡器侧屏蔽
公开(公告)号：US09472214B1
公开(公告)日：2016-10-18
申请号：US14514050
申请日：2014-10-14
申请人： Seagate Technology LLC
发明人： Xin Cao , Frances Paula McElhinney , Jiansheng Xu , Marcus Winston Ormston
IPC分类号： G11B5/31 , G11B5/11 , G11B5/39
CPC分类号： G11B5/3912 , G11B5/112 , G11B5/3163 , G11B5/39 , G11B5/3903 , G11B5/3906 , G11B5/3929 , G11B5/3932 , G11B5/6082 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048
摘要： A magnetoresistive (MR) sensor shield shields against both down track and cross-track interference. The shield can be formed in a single deposition step. In one implementation of the disclosed technology, a “tail” portion of the shield is eliminated by including a non-magnetic material adjacent to opposite sides of a middle portion of the sensor stack.
摘要翻译：磁阻（MR）传感器屏蔽屏蔽屏蔽防止下行轨道和交叉轨道干扰。屏蔽可以在单个沉积步骤中形成。在所公开的技术的一个实现中，通过在传感器堆叠的中间部分的相对侧附近包括非磁性材料来消除屏蔽的“尾”部分。

25. 发明授权

US09437224B2 Stack with wide seed layer 有权
标题翻译：堆叠宽种子层
公开(公告)号：US09437224B2
公开(公告)日：2016-09-06
申请号：US14463331
申请日：2014-08-19
申请人： Eric Walter Singleton , Jae-Young Yi , Konstantin Nikolaev , Victor Boris Sapozhnikov , Stacey Christine Wakeham , Shaun Eric McKinlay
发明人： Eric Walter Singleton , Jae-Young Yi , Konstantin Nikolaev , Victor Boris Sapozhnikov , Stacey Christine Wakeham , Shaun Eric McKinlay
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
CPC分类号： G11B5/3906 , G01R33/093 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B5/398 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.
摘要翻译：具有种子层结构的堆叠，其第一部分具有第一交叉轨道宽度和沉积在种子层结构上并且具有第二交叉轨道宽度的自由层，其中第一交叉轨道宽度大于第二交叉曲线宽度在一个实施方案中，种子层结构还包括反铁磁（AFM）层和合成反铁磁（SAF）层。在一个替代实施方案中，种子层结构的交叉轨道宽度基本上等于两个永磁体的自由层的组合交叉轨道宽度和交叉轨道宽度。

26. 发明申请

US20160217813A1 MULTI-SENSOR READER STRUCTURE HAVING A CURRENT PATH WITH INCREASED SIZE TO REDUCE NOISE 有权
标题翻译：具有增加大小的电流路径以减少噪声的多传感器读取器结构
公开(公告)号：US20160217813A1
公开(公告)日：2016-07-28
申请号：US14604617
申请日：2015-01-23
申请人： HGST NETHERLANDS B.V.
发明人： Hideki Mashima , Kenichi Meguro , Nobuo Yoshida , Toyoshige Noridomi , Tomohiro Saito , Kaori Suzuki
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3912 , G11B5/3932 , G11B5/3948 , G11B5/3958 , G11B5/397
摘要： In one embodiment, a magnetic head includes a lower magnetic shield layer positioned at a media-facing surface, a pinned layer positioned above the lower magnetic shield layer at the media-facing surface, at least two MR elements extending in an element height direction by a first length positioned above the pinned layer and separated in a cross-track direction by an inner layer, bias layers extending in the element height direction by a second length positioned on outside edges of the MR elements and the pinned layer, and current paths positioned above and in electrical communication with the bias layers on either side of the inner layer, each current path extending in the element height direction away from the media-facing surface by a third length.
摘要翻译：在一个实施例中，磁头包括位于面向介质表面的下磁屏蔽层，位于面向媒体的表面上的下磁屏蔽层上方的被钉扎层，至少两个沿单元高度方向延伸的MR元件，所述第一长度位于所述被钉扎层上方并且在交叉轨道方向上由内层分离，所述偏置层在所述元件高度方向上延伸位于所述MR元件和被钉扎层的外边缘上的第二长度，并且所述电流路径被定位并且与内层的任一侧上的偏置层电连通，每个电流路径在元件高度方向上延伸离开面向介质的表面第三长度。

27. 发明授权

US09390735B1 Data reader side shield with differing stripe heights 有权
标题翻译：具有不同条纹高度的数据读取器侧屏蔽
公开(公告)号：US09390735B1
公开(公告)日：2016-07-12
申请号：US14675074
申请日：2015-03-31
申请人： Seagate Technology LLC
发明人： Zhiran Wang , Kevin A. McNeill , Robert Lamberton
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G11B5/3932 , G11B5/398
摘要： A data reader may have a magnetoresistive stack positioned on an air bearing surface and consisting of at least a magnetically free structure that continuously extends from the air bearing surface with a first stripe height. A side shield can be separated from the magnetoresistive stack on the ABS and configured with a first magnetic layer having the first stripe height and a second magnetic layer having a third stripe height from the air bearing surface with the third stripe height being greater than the first stripe height. The side shield can be anti-ferromagnetically biased by a synthetic antiferromagnetic top shield structure that contacts the side shield through a transition metal material layer. The first stripe height can be configured to match a magnetically free layer of the magnetoresistive stack and the second stripe height can be configured to match a magnetically fixed layer of the magnetoresistive stack.
摘要翻译：数据读取器可以具有位于空气轴承表面上并由至少一个无磁结构组成的磁阻堆叠，该结构从空气轴承表面以第一条纹高度连续延伸。侧屏蔽可以与ABS上的磁阻堆叠分离，并配置有具有第一条带高度的第一磁性层和具有距空气支承表面的第三条带高度的第二磁性层，第三条纹高度大于第一条带高度条纹高度。侧屏蔽可以通过合成的反铁磁顶层屏蔽结构进行反铁磁偏置，该结构通过过渡金属材料层接触侧屏蔽。可以将第一条纹高度配置成匹配磁阻堆叠的无磁层，并且可以将第二条纹高度配置成与磁阻堆叠的磁性固定层相匹配。

28. 发明申请

US20160196841A1 TMR HEAD DESIGN WITH INSULATIVE LAYERS FOR SHORTING MITIGATION 有权
标题翻译：具有绝缘层的TMR头设计用于短路
公开(公告)号：US20160196841A1
公开(公告)日：2016-07-07
申请号：US15054071
申请日：2016-02-25
申请人： International Business Machines Corporation
发明人： Robert G. Biskeborn , Robert E. Fontana, JR. , Jason Liang , Calvin S. Lo
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G11B5/11 , G11B5/39 , G11B5/3909 , G11B5/3932 , G11B5/3948 , G11B5/398 , G11B5/40
摘要： An apparatus according to one embodiment includes a transducer structure having: a lower shield having recesses in an upper surface thereof; an upper shield formed above the lower shield; a sensor between the upper and lower shields, the recesses being positioned on opposite sides of the sensor; and a first insulating layer in the recesses in the upper surface of the lower shield. An upper surface of the first insulating layer is coplanar with an uppermost portion of the upper surface of the lower shield. An apparatus according to another embodiment includes a transducer structure having: a lower shield having recesses in an upper surface thereof; an upper shield formed above the lower shield, the upper shield having recesses in a lower surface thereof; a sensor between the shields, the recesses being positioned on opposite sides of the sensor; and insulating layers in the recesses in the shields.
摘要翻译：根据一个实施例的装置包括换能器结构，其具有：在其上表面中具有凹部的下屏蔽件; 形成在下屏蔽上方的上屏蔽件; 在上和下屏蔽之间的传感器，凹部位于传感器的相对侧上; 以及在下屏蔽的上表面的凹部中的第一绝缘层。第一绝缘层的上表面与下屏蔽的上表面的最上部共面。根据另一实施例的装置包括换能器结构，其具有：具有在其上表面中的凹部的下屏蔽件; 形成在所述下屏蔽件上方的上屏蔽件，所述上屏蔽件在其下表面具有凹部; 在屏蔽之间的传感器，凹槽位于传感器的相对侧上; 并且在屏蔽件的凹部中具有绝缘层。

29. 发明授权

US09361914B1 Magnetic sensor with thin capping layer 有权
标题翻译：磁性传感器，薄盖层
公开(公告)号：US09361914B1
公开(公告)日：2016-06-07
申请号：US14308421
申请日：2014-06-18
申请人： Western Digital (Fremont), LLC
发明人： Christian Kaiser , Qunwen Leng
IPC分类号： G11B5/39 , G11B5/31
CPC分类号： G11B5/39 , G11B5/3116 , G11B5/3903 , G11B5/3909 , G11B5/3912 , G11B5/3929 , G11B5/3932 , G11B2005/3996
摘要： A magnetic sensor for use in a data storage device is described. The magnetic sensor includes a composite layer comprising a free layer portion and a bias layer portion each comprising a magnetic material, a shield layer comprising a magnetic material, and a continuous spacer layer comprising a non-magnetic material, the spacer layer separating the shield layer from the composite layer such that the magnetic coupling between the shield layer and the bias layer portion is stronger than the magnetic coupling between the shield layer and the free layer portion. A disk drive comprising a rotatable magnetic recording disk and the slider including the magnetic sensor arranged with the magnetic recording disk is also described.
摘要翻译：描述了一种用于数据存储装置的磁传感器。磁传感器包括复合层，该复合层包括自由层部分和偏置层部分，每个偏置层部分包括磁性材料，包含磁性材料的屏蔽层和包含非磁性材料的连续间隔层，所述间隔层将屏蔽层从复合层使得屏蔽层和偏置层部分之间的磁耦合比屏蔽层和自由层部分之间的磁耦合更强。还描述了包括可旋转磁记录盘的磁盘驱动器和包括与磁记录盘配置的磁传感器的滑块。

30. 发明申请

US20160153808A1 SENSOR ARRANGEMENT FOR POSITION SENSING 有权
标题翻译：传感器布置用于位置感测
公开(公告)号：US20160153808A1
公开(公告)日：2016-06-02
申请号：US14918873
申请日：2015-10-21
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： ANGELIKI PANTAZI , ABU SEBASTIAN , TOMAS TUMA
IPC分类号： G01D5/16
CPC分类号： G01D5/16 , G01B7/003 , G01D5/145 , G01R33/09 , G01R33/091 , G11B5/39 , G11B5/3903 , G11B5/3932
摘要： A sensor arrangement for position sensing comprises a magnetic field source and a magnetoresistive element arranged in a magnetic field generated by the magnetic field source, which magnetoresistive element provides an output signal (R) dependent on a position (x) of the magnetoresistive element relative to the magnetic field source. A feedback controller is configured to receive the output signal (R) of the magnetoresistive element and is configured to adjust one or more of the position (x) of the magnetoresistive element relative to the magnetic field source and a strength of the magnetic field generated by the magnetic field source acting on the magnetoresistive element dependent on the output signal (R) of the magnetoresistive element.
摘要翻译：用于位置检测的传感器装置包括磁场源和布置在由磁场源产生的磁场中的磁阻元件，该磁阻元件提供取决于磁阻元件相对于磁阻元件的位置（x）的输出信号（R）磁场源。反馈控制器被配置为接收磁阻元件的输出信号（R）并且被配置为调整磁阻元件相对于磁场源的位置（x）中的一个或多个以及由磁场源产生的磁场强度取决于磁阻元件的输出信号（R）的作用在磁阻元件上的磁场源。

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