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21. 发明授权

US5874675A Wideband vibration sensor 失效
标题翻译：宽带振动传感器
公开(公告)号：US5874675A
公开(公告)日：1999-02-23
申请号：US821042
申请日：1997-03-20
申请人： Daniel M. Edmans , Adolfo Gutierrez , Christopher Cormeau , Edward Maby
发明人： Daniel M. Edmans , Adolfo Gutierrez , Christopher Cormeau , Edward Maby
IPC分类号： G01P15/12 , G01P15/13
CPC分类号： G01P15/131 , G01P15/124
摘要： This invention relates to an apparatus for making highly sensitive measurements of acceleration. The vibration sensor includes the use of a movable gate field effect transistor to sense the motion of a cantilever beam with respect to its base, it also includes an actuator element formed by a pair of electrodes actuating electrostatically on the beam. A feedback control loop is also included for force balance operation resulting in a very wide dynamic range for the sensor.
摘要翻译：本发明涉及用于进行高灵敏度的加速度测量的装置。振动传感器包括使用可移动栅极场效应晶体管来感测悬臂梁相对于其底座的运动，它还包括由在电子束上静电地驱动的一对电极形成的致动器元件。还包括反馈控制回路用于力平衡操作，从而为传感器提供非常宽的动态范围。

22. 发明授权

US5851851A Method for fabricating a semiconductor acceleration sensor 失效
标题翻译：半导体加速度传感器的制造方法
公开(公告)号：US5851851A
公开(公告)日：1998-12-22
申请号：US399342
申请日：1995-03-06
申请人： Hirofumi Uenoyama , Masakazu Kanosue , Kenichi Ao , Yasutoshi Suzuki
发明人： Hirofumi Uenoyama , Masakazu Kanosue , Kenichi Ao , Yasutoshi Suzuki
IPC分类号： G01P15/08 , G01P15/12 , H01L21/78
CPC分类号： G01P15/0802 , G01P15/124 , G01P2015/0814
摘要： It is an object to provide a method of fabrication for a semiconductor acceleration sensor which can prevent destruction of a movable portion during dicing. A sacrificial layer composed of silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the sacrificial layer. A polyimide film is applied on the movable member at room temperature and heated to approximately 350.degree. C. to harden. The movable member is supported by this polyimide film. Accordingly, etching liquid penetration holes are formed on the polyimide film. Further, the sacrificial layer disposed between the movable member and the silicon substrate is etched away by means of dipping the silicon substrate into hydrofluoric acid-based etching liquid. Thereafter, the silicon substrate is dipped into demineralized water to replace the etching liquid with demineralized water, and subsequently the silicon substrate is dried. Accordingly, the silicon substrate is diced and thereafter the polyimide film is etched away by O.sub.2 ashing.
摘要翻译：本发明的目的是提供一种半导体加速度传感器的制造方法，其可以防止在切割期间可动部分的破坏。在硅衬底上形成由氧化硅膜构成的牺牲层，在牺牲层上形成由多晶硅构成的可动构件。将聚酰亚胺膜在室温下涂布在可动件上并加热至约350℃以硬化。可动构件由该聚酰亚胺膜支撑。因此，在聚酰亚胺膜上形成蚀刻液体穿透孔。此外，通过将硅衬底浸入氢氟酸蚀刻液中，设置在可移动部件和硅衬底之间的牺牲层被蚀刻掉。此后，将硅衬底浸入软化水中以用软化水代替蚀刻液，随后将硅衬底干燥。因此，对硅衬底进行切割，然后通过氧化物灰蚀蚀刻掉聚酰亚胺膜。

23. 发明授权

US5818093A Semiconductor device having a movable gate 失效
标题翻译：具有可移动栅极的半导体器件
公开(公告)号：US5818093A
公开(公告)日：1998-10-06
申请号：US591875
申请日：1996-01-25
申请人： Ronald J. Gutteridge , Margaret L. Kniffin , Zuoying L. Zhang , Raymond M. Roop
发明人： Ronald J. Gutteridge , Margaret L. Kniffin , Zuoying L. Zhang , Raymond M. Roop
IPC分类号： G01P15/08 , G01P15/12 , H01L29/78 , H01L29/84 , H01L27/14 , H01L27/20 , H01L29/82
CPC分类号： G01P15/0802 , G01P15/124
摘要： A semiconductor device (8) has a movable gate (20) over a semiconductor substrate (14) having a top surface (30). Source and drain regions (16-19) are in the substrate, and a channel region (24,25) is between the source and drain regions. The gate is suspended above the source and drain regions such that the gate is movable in a plane substantially parallel to the top surface of the substrate. In one embodiment the device is an accelerometer having the gate connected to a beam (10) with an aspect ratio between 2:1 and 10:1. Also, the gate can have first and second levels (22,23) corresponding to first and second threshold voltages of the channel region.
摘要翻译：半导体器件（8）在具有顶表面（30）的半导体衬底（14）上方具有可移动栅极（20）。源区和漏区（16-19）位于衬底中，沟道区（24,25）位于源区和漏区之间。栅极悬挂在源极和漏极区域之上，使得栅极可在基本上平行于衬底的顶表面的平面中移动。在一个实施例中，该装置是加速度计，其具有连接到长宽比在2:1和10:1之间的梁（10）的栅极。此外，栅极可以具有对应于沟道区的第一和第二阈值电压的第一和第二电平（22,23）。

24. 发明授权

US5627397A Semiconductor acceleration sensor with source and drain regions 失效
标题翻译：具有源极和漏极区域的半导体加速度传感器
公开(公告)号：US5627397A
公开(公告)日：1997-05-06
申请号：US402949
申请日：1995-03-13
申请人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama , Kenichi Nara
发明人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama , Kenichi Nara
IPC分类号： G01P1/00 , G01P15/12 , H01L29/84 , H01L29/82
CPC分类号： G01P15/124 , G01P1/006 , Y10S73/01
摘要： A semiconductor acceleration sensor according to the present invention performs acceleration detection by means of detecting increase or decrease in electrical current flowing between fixed electrodes formed on a semiconductor substrate taking a movable section in a movable state supported on the semiconductor substrate as a gate electrode. Two transistor structures are utilized in this detection. Current between fixed electrodes in one transistor structure increases when the movable section is subjected to acceleration and is displaced. At that time, current between fixed electrodes in the other transistor structure decreases. These two transistor structures are disposed proximately. By means of this proximate disposition, fluctuations in characteristics of both transistors are reduced, and by means of acceleration detection by differential type, temperature characteristics of the two transistors can be canceled favorably.
摘要翻译：根据本发明的半导体加速度传感器通过检测形成在半导体衬底上的固定电极之间的电流的增加或减少来执行加速度检测，该半导体衬底以可移动状态支撑在作为栅电极的半导体衬底上的可移动状态。在该检测中使用两个晶体管结构。一个晶体管结构中的固定电极之间的电流在可移动部分受到加速并被移位时增加。此时，另一晶体管结构中的固定电极之间的电流降低。这两个晶体管结构靠近地设置。通过这种接近的配置，两个晶体管的特性波动减小，并且通过差分类型的加速度检测，可以有利地消除两个晶体管的温度特性。

25. 发明授权

US5557185A Mechanical/electrical displacement transducer 失效
公开(公告)号：US5557185A
公开(公告)日：1996-09-17
申请号：US488068
申请日：1995-06-07
申请人： Stephen C. Jacobsen , Michael G. Mladejovsky , John E. Wood
发明人： Stephen C. Jacobsen , Michael G. Mladejovsky , John E. Wood
IPC分类号： G01B7/00 , G01D1/18 , G01D5/14 , G01D5/165 , G01D5/18 , G01D5/241 , G01D5/34 , G01L1/00 , G01P15/093 , G01P15/12 , H04R23/00 , G01R29/12 , H04R19/00
CPC分类号： G01B7/003 , G01D1/18 , G01D5/145 , G01D5/165 , G01D5/18 , G01D5/2412 , G01D5/34 , G01L1/005 , G01P15/093 , G01P15/12 , G01P15/124 , H04R23/00
摘要： Displacement measuring apparatus for measuring the displacement and movement of an object includes a sensor having an operative surface and circuitry for producing an electrical output signal whose value is dependent upon the area of the operative surface covered by an electrical/magnetic field producing member. The apparatus also includes an elongate, flexible band capable of producing an electric/magnetic field, where the band is attached at one end to the sensor to roll over and cover or unroll from over and uncover the operative surface as the object whose displacement is to be measured is moved. The value of the electrical output signal produced by the circuitry is thus dependent upon the area of the operative surface covered by the band and thus by the position and movement of the object.

26. 发明授权

US5541437A Acceleration sensor using MIS-like transistors 失效
标题翻译：加速传感器采用MIS类晶体管
公开(公告)号：US5541437A
公开(公告)日：1996-07-30
申请号：US404295
申请日：1995-03-14
申请人： Takamoto Watanabe , Shigeru Nonoyama , Yukihiro Takeuchi
发明人： Takamoto Watanabe , Shigeru Nonoyama , Yukihiro Takeuchi
IPC分类号： G01P15/125 , B81B3/00 , G01P15/08 , G01P15/12 , G01P15/13 , H01L29/84 , H01L29/82
CPC分类号： G01P15/131 , G01P15/124 , G01P2015/0814 , Y10S73/01
摘要： In an acceleration sensor having movable gates and a movable electrode and having a signal processing portion, the movable gates generate a differential voltage from acceleration in one direction and its output signal is fed back to the movable electrode. The balance of the movable portion is kept using an electrostatic force which cancels the acceleration acting on the movable portion, and signal detection is stabilized using closed loop control. Since signal detection is on a differential basis, acceleration can be detected in only one direction. Since a change in current is detected as a voltage difference, no carrier wave is required. Since MISFETs having movable gates are formed in pairs, there is no influence of temperature drifts. The use of a differential signal similarly cancels the influence of fluctuations of the power supply. Configuration of an acceleration sensor is thus simplified.
摘要翻译：在具有可动栅极和可动电极并具有信号处理部分的加速度传感器中，可移动栅极从一个方向的加速度产生差分电压，并将其输出信号反馈到可动电极。使用抵消作用在可动部上的加速度的静电力来保持可动部的平衡，并且使用闭环控制来稳定信号检测。由于信号检测是基于差分的，所以只能在一个方向上检测加速度。由于电流变化被检测为电压差，因此不需要载波。由于具有可动栅极的MISFET成对成形，所以不会有温度漂移的影响。差分信号的使用也可以抵消电源波动的影响。因此，加速度传感器的结构被简化。

27. 发明授权

US5115292A Semiconductor sensor 失效
标题翻译：半导体传感器
公开(公告)号：US5115292A
公开(公告)日：1992-05-19
申请号：US403296
申请日：1989-09-05
申请人： Katsuhiko Takebe , Mizuho Doi , Hiroyasu Takehara , Satoshi Hiyama , Masanobu Urabe
发明人： Katsuhiko Takebe , Mizuho Doi , Hiroyasu Takehara , Satoshi Hiyama , Masanobu Urabe
IPC分类号： G01P15/08 , G01P15/12
CPC分类号： G01P15/123 , G01P15/0802 , G01P15/124 , G01P2015/0828 , H01L2224/48091 , H01L2924/12032 , H01L2924/13091 , Y10S73/04
摘要： This invention relates to a semiconductor sensor for detecting external physical forces, such as acceleration, contact pressures, air pressures, mechanical vibrations, etc. The semiconductor sensor according to this invention is characterized by the use of compound semiconductors of high piezoelectricity, such as GaAs, etc. Conventionally sensors of the cantilever type, diaphragm type, etc. are made of silicon. These prior art sensors have low detection sensitivity, and their characteristics tend to deteriorate. The sensor according to this invention is made of GaAs, which has high piezoelectricity and can retain good characteristics of the semiconductor even at high temperatures and includes a field-effect transistor formed on the GaAs for sensing a stress. The FET is driven by a constant current or a constant voltage so as to detect a change of an electrical characteristic (e.g., threshold characteristic) due to a stress. The structure of the sensor according to this invention enables the sizes of the sensors not only to be diminished but also to reduce the fabrication costs. When a stress is applied to the FET, the transconductance changes, and the temperature changes, consequently the I-V characteristic changes. An a.c. signal biased by a direct current is supplied to the gate of the FET, and a drain current is detected in an a.c. component and a d.c. component so as to detect a temperature concurrently with a detection of a stress.

28. 发明授权

US4873871A Mechanical field effect transistor sensor 失效
标题翻译：机械场效应晶体管传感器
公开(公告)号：US4873871A
公开(公告)日：1989-10-17
申请号：US207993
申请日：1988-06-17
申请人： Monty W. Bai , Douglas J. Huhmann
发明人： Monty W. Bai , Douglas J. Huhmann
IPC分类号： G01B7/16 , G01H11/06 , G01L9/00 , G01P15/12 , H01L29/84
CPC分类号： H01L29/84 , G01B7/16 , G01H11/06 , G01L9/0098 , G01P15/124
摘要： A mechanical field effect transistor sensor which has a drain and a source on a semiconductor portion, and a moveable gate which causes conduction between the drain and source when the gate is in proximity or touching the semiconductor portion. The gate in its preferred embodiment comprises a cantilever microbeam which allows movement of the gate up or down with respect to the semiconductor portion when a force is applied to the microbeam. The microbeam can be replaced with a diaphragm or a simply supported beam. The gate is coupled to an external voltage source which supplies a voltage to the gate causing the conduction between drain and source. Another embodiment uses a piezoelectric material for the gate which generates a voltage when it is compressed or expanded due to forces caused by changes in acceleration and magnetic fields.
摘要翻译：一种在半导体部分具有漏极和源极的机械场效应晶体管传感器，以及当栅极接近或接触半导体部分时在漏极和源极之间导通的可移动栅极。在其优选实施例中的门包括悬臂微束，其允许当将力施加到微束时，栅极相对于半导体部分向上或向下移动。微束可以用隔膜或简单的支撑梁代替。栅极耦合到外部电压源，该外部电压源向栅极提供电压，导致漏极和源极之间的导通。另一实施例使用用于门的压电材料，其由于加速度和磁场变化引起的力而被压缩或膨胀时产生电压。

29. 发明授权

US4772928A Electric transducer for measuring mechanical quantities 失效
标题翻译：用于测量机械量的电子传感器
公开(公告)号：US4772928A
公开(公告)日：1988-09-20
申请号：US855886
申请日：1986-04-24
申请人： Klaus Dietrich , Walter Kroy
发明人： Klaus Dietrich , Walter Kroy
IPC分类号： G01L1/18 , G01P15/12 , G01P15/13 , H01L29/84 , H01L29/96
CPC分类号： G01P15/131 , G01L1/18 , G01P15/124 , H01L29/84
摘要： An electric transducer for measuring mechanical quantities comprises a movable tongue which is acted upon by the mechanical quantity to be measured and the deflection of which is converted into an electrical signal. The tip of the tongue may be designed as the gate and an electric conduction channel disposed opposite the tip at a small distance therefrom may comprise the source-drain path of a field effect transistor, or vice versa.
摘要翻译：用于测量机械量的电传感器包括可移动舌片，该舌片由被测量的机械量作用并将其偏转转换成电信号。舌头的尖端可以被设计为栅极，并且与尖端相对地设置在距离其较小距离处的导电通道可以包括场效应晶体管的源极 - 漏极路径，反之亦然。

30. 发明授权

US3493912A Strain responsive transducer means of the diaphragm type 失效
标题翻译：膜片类型的应变响应传感器
公开(公告)号：US3493912A
公开(公告)日：1970-02-03
申请号：US3493912D
申请日：1967-10-25
申请人： ETHER ENG LTD
发明人： TULL VICTOR FREDERICK GEORGE , DUFFIELD FREDERICK EDWARD
IPC分类号： G01L9/00 , G01P1/00 , G01P15/12 , G01L1/22
CPC分类号： G01L9/0055 , G01P1/003 , G01P15/123 , G01P15/124

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