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21. 发明授权

US07777303B2 Semiconductor-nanocrystal/conjugated polymer thin films 有权
标题翻译：半导体纳米晶体/共轭聚合物薄膜
公开(公告)号：US07777303B2
公开(公告)日：2010-08-17
申请号：US10392668
申请日：2003-03-18
申请人： A. Paul Alivisatos , Janke J. Dittmer , Wendy U. Huynh , Delia Milliron
发明人： A. Paul Alivisatos , Janke J. Dittmer , Wendy U. Huynh , Delia Milliron
IPC分类号： H01L31/00
CPC分类号： H01L31/0384 , B82Y20/00 , B82Y30/00 , C09K19/02 , C09K19/52 , C30B7/005 , C30B29/40 , C30B29/48 , C30B29/605 , H01L51/0036 , H01L51/0037 , H01L51/426 , H01L51/4266 , H01L2251/308 , Y02E10/549 , Y10S117/903
摘要： The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.
摘要翻译：本文描述的本发明提供了薄膜和制造方法，其包括以高负载量分散在半导体聚合物中的无机半导体纳米晶体。本发明还描述了结合薄膜的光伏器件。

22. 发明授权

US07750355B2 Light emitting element structure using nitride bulk single crystal layer 有权
标题翻译：使用氮化物块状单晶层的发光元件结构
公开(公告)号：US07750355B2
公开(公告)日：2010-07-06
申请号：US10493594
申请日：2002-10-28
申请人： Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek Sierzputowski , Yasuo Kanbara
发明人： Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek Sierzputowski , Yasuo Kanbara
IPC分类号： H01L33/00
CPC分类号： C30B29/403 , B82Y20/00 , C30B7/005 , C30B7/10 , C30B9/00 , C30B29/406 , H01S5/021 , H01S5/0213 , H01S5/0218 , H01S5/0281 , H01S5/164 , H01S5/22 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S2304/12
摘要： The object of this invention is to provide a high-output type nitride light emitting device.The nitride light emitting device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and an active layer therebetween, wherein a gallium-containing nitride substrate is obtained from a gallium-containing nitride bulk single crystal, provided with an epitaxial growth face with dislocation density of 105/cm2 or less, and A-plane or M-plane which is parallel to C-axis of hexagonal structure for an epitaxial face, wherein the n-type semiconductor layer or layers are formed directly on the A-plane or M-plane.In case that the active layer comprises a nitride semiconductor containing In, an end face film of single crystal AlxGa1-xN (0≦x≦1) can be formed at a low temperature not causing damage to the active layer.
摘要翻译：本发明的目的是提供一种高输出型氮化物发光器件。氮化物发光器件包括n型氮化物半导体层或p型氮化物半导体层或其间的有源层，其中含镓氮化物衬底由含镓氮化物本体单晶获得，具有位错密度为105 / cm 2以下的外延生长面，平行于外延面的六方结构的C轴的A面或M面，其中，形成n型半导体层直接在A平面或M平面上。在有源层包括含有In的氮化物半导体的情况下，可以在不会对有源层造成损害的低温下形成单晶Al x Ga 1-x N（0＆amp; nlE; x＆nlE; 1）的端面膜。

23. 发明授权

US07662357B2 Hydrogen-containing electrically conductive inorganic compound 有权
标题翻译：含氢导电无机化合物
公开(公告)号：US07662357B2
公开(公告)日：2010-02-16
申请号：US10511715
申请日：2003-04-18
申请人： Hideo Hosono , Masahiro Hirano , Katsuro Hayashi
发明人： Hideo Hosono , Masahiro Hirano , Katsuro Hayashi
IPC分类号： C01F7/00
CPC分类号： H01B1/08 , C01B3/00 , C01F7/164 , C01F7/166 , C01P2006/40 , C04B35/44 , C04B2235/3208 , C04B2235/3213 , C04B2235/44 , C04B2235/6565 , C04B2235/658 , C04B2235/6582 , C04B2235/96 , C30B7/00 , C30B7/005 , Y02E60/324
摘要： Disclosed is a 12CaO.7Al2O3 compound, a 12SrO.7Al2O3 compound, or a mixed crystal compound of 12CaO.7Al2O3 and 12SrO.7Al2O3, which contains a negative hydrogen ion (H−, H2−, H2− at a concentration of 1×1018 cm−3 or more. A negative hydrogen ion comprising a primary component of a hydride ion is incorporated into C12A7 (12CaO.7Al2O3), so that a function of being converted from an insulative material to an electrically conductive material in a sustained manner by means of irradiation with light can be exhibited even in the normal atmosphere at a room temperature. The present invention also provides a solid electrolyte capable of conducting a negative hydrogen ion, and means for releasing a hydride ion from the inside of a solid into a gaseous phase using an electric field.
摘要翻译：公开了12Ca0.7Al2O3化合物，12SrO.7Al2O3化合物或12CaO.7Al2O3和12SrO.7Al2O3的混合晶体化合物，它含有负氢离子（H，H 2 - ，H 2 - 浓度为1×10 18 cm -1） 3以上，含有氢离子主要成分的负氢离子被并入到C12A7（12Ca0.7Al2O3）中，使得通过照射以持续的方式从绝缘材料转变为导电材料的功能本发明还提供能够导入负氢离子的固体电解质，以及使氢化物离子从固体内部释放到气相中的方法，使用电场。

24. 发明申请

US20080138927A1 Systems and Methods for Fabricating Crystalline Thin Structures Using Meniscal Growth Techniques 审中-公开
标题翻译：使用半月板生长技术制造晶体薄结构的系统和方法
公开(公告)号：US20080138927A1
公开(公告)日：2008-06-12
申请号：US11968386
申请日：2008-01-02
申请人： Randall L. Headrick
发明人： Randall L. Headrick
IPC分类号： H01L21/00 , C30B7/00
CPC分类号： H01L31/182 , C30B7/005 , C30B7/06 , C30B29/54 , H01L51/0003 , H01L51/0545 , Y02E10/546 , Y02E10/549 , Y02P70/521 , Y10T117/1092
摘要： Systems and methods that utilize semiconductor molecules to form crystalline thin-films by depositing the molecules into a substrate at a lateral growth front. Techniques embodied in corresponding ones of the disclosed systems and methods include a submersion technique in which a substrate is submerged in a precursor solution containing the molecules and a film is grown at a meniscus formed between the free surface of the solution and the substrate. Another disclosed technique is a mask technique in which a film is grown on a substrate through an aperture of a moving mask be exposing the aperture to the molecules. Yet another technique disclosed is a writing technique in which a pen is used to deliver to a substrate a precursor solution containing the molecules and the film is grown as the solvent evaporates from the delivered solution.
摘要翻译：利用半导体分子通过在侧向生长前沿沉积分子到基底中来形成晶体薄膜的系统和方法。在相应的所公开的系统和方法中体现的技术包括浸没技术，其中将基底浸没在含有分子的前体溶液中，并且在形成在溶液的自由表面和基底之间的弯液面上生长膜。另一种公开的技术是掩模技术，其中通过移动掩模的孔将衬底生长在衬底上以将孔暴露于分子。所公开的另一种技术是一种书写技术，其中笔被用于将含有分子的前体溶液递送到基底，并且当溶剂从所输送的溶液蒸发时，该膜生长。

25. 发明申请

US20080119642A1 CONTROLLED SURFACE TOPOGRAPHY FOR ENHANCED PROTEIN CRYSTALLIZATION RATES 审中-公开
标题翻译：用于增强蛋白质结晶率的控制表面形貌
公开(公告)号：US20080119642A1
公开(公告)日：2008-05-22
申请号：US11943134
申请日：2007-11-20
申请人： Matthew HALL
发明人： Matthew HALL
IPC分类号： C07K1/00
CPC分类号： C30B29/58 , C30B7/00 , C30B7/005
摘要： A method for accelerating protein crystallization on a substrate is provided, including the steps of providing a coating layer comprising a colloidal solution containing inert particles on at least one discrete testing portion of a testing substrate to provide at least one coated portion, and drying the coated portion so that the coated portion has an enhanced surface topography defined by the characteristics of the coating layer. A supersaturated protein solution is applied to the coated portion, and the testing substrate is placed in an incubator for crystallization, and the growth rate of the protein crystals is accelerated during incubation due to the enhanced surface topography of the at least one coated portion. The testing substrate is evaluated to determine the degree of protein crystallization until crystallization in complete, and the protein crystals are subsequently removed from the testing substrate subjected to specific characterization testing.
摘要翻译：提供了一种用于加速基质上的蛋白质结晶的方法，包括以下步骤：在测试基材的至少一个离散的测试部分上提供包含惰性颗粒的胶体溶液的涂层，以提供至少一个涂布部分，使得涂覆部分具有由涂层的特性限定的增强的表面形貌。将过饱和蛋白质溶液施加到涂布部分，并且将测试底物置于培养箱中用于结晶，并且由于至少一个涂布部分的增强的表面形貌，蛋白质晶体的生长速率在孵育期间被加速。评估测试底物以确定蛋白质结晶的程度，直到完全结晶，随后将蛋白质晶体从经过特异性表征测试的测试底物中除去。

26. 发明申请

US20080038558A1 I-III-VI SEMICONDUCTOR NANOCRYSTALS, I-III-VI WATER STABLE SEMICONDUCTOR NANOCRYSTALS, AND METHODS OF MAKING SAME 审中-公开
标题翻译： I-III-VI半导体纳米晶，I-III-VI水稳定半导体纳米晶及其制备方法
公开(公告)号：US20080038558A1
公开(公告)日：2008-02-14
申请号：US11680344
申请日：2007-02-28
申请人： Daniel LANDRY , Wei LIU , Weili SHI , Susanthri PERERA , Alfred WARING
发明人： Daniel LANDRY , Wei LIU , Weili SHI , Susanthri PERERA , Alfred WARING
IPC分类号： B32B15/02 , B05D5/12 , H01B1/00 , B29C41/40
CPC分类号： C30B29/60 , C30B7/005 , C30B29/46 , Y10T428/2991
摘要： A I-III-VI semiconductor nanocrystal composition and method of making same. A water-stable I-III-VI semiconductor nanocrystal complex and method of making same is also provided. A substantially monodisperse population of I-III-VI semiconductor nanocrystal compositions and water-stable I-III-VI semiconductor complexes are further provided.
摘要翻译：一种I-III-VI半导体纳米晶体组合物及其制备方法。还提供了水稳定的I-III-VI半导体纳米晶体复合物及其制备方法。还提供了I-III-VI半导体纳米晶体组合物和水稳定的I-III-VI半导体复合物的基本单分散的群体。

27. 发明申请

US20070243716A1 Selection and deposition of nanoparticles using CO2-expanded liquids 有权
标题翻译：使用二氧化碳膨胀液体选择和沉积纳米颗粒
公开(公告)号：US20070243716A1
公开(公告)日：2007-10-18
申请号：US11237601
申请日：2005-09-27
申请人： Christopher Roberts , Marshall McLeod , Madhu Anand
发明人： Christopher Roberts , Marshall McLeod , Madhu Anand
IPC分类号： H01L21/31
CPC分类号： C30B7/00 , B05D1/18 , B05D2401/32 , B05D2401/90 , B82Y30/00 , C30B7/005 , C30B29/605 , Y10S977/70 , Y10S977/773
摘要： A method for size selection of nanostructures comprising utilizing a gas-expanded liquids (GEL) and controlled pressure to precipitate desired size populations of nanostructures, e.g., monodisperse. The GEL can comprise CO2 antisolvent and an organic solvent. The method can be carried out in an apparatus comprising a first open vessel configured to allow movement of a liquid/particle solution to specific desired locations within the vessel, a second pressure vessel, a location controller for controlling location of the particles and solution within the first vessel, a inlet for addition of antisolvent to the first vessel, and a device for measuring the amount of antisolvent added. Also disclosed is a method for forming nanoparticle thin films comprising utilizing a GEL containing a substrate, pressurizing the solution to precipitate and deposit nanoparticles onto the substrate, removing the solvent thereby leaving a thin nanoparticle film, removing the solvent and antisolvent, and drying the film.
摘要翻译：纳米结构尺寸选择的方法包括利用气体膨胀液体（GEL）和受控压力来沉淀所需尺寸的纳米结构体，例如单分散。 GEL可以包含CO 2反溶剂和有机溶剂。该方法可以在包括构造成允许液体/颗粒溶液移动到容器内的特定所需位置的第一开放容器的设备中进行，第二压力容器，位置控制器，用于控制颗粒和溶液的位置第一容器，用于向第一容器添加抗溶剂的入口，以及用于测量加入的抗溶剂量的装置。还公开了一种用于形成纳米颗粒薄膜的方法，其包括使用含有底物的GEL，将溶液加压沉淀并将纳米颗粒沉积到基底上，除去溶剂从而留下薄的纳米颗粒膜，除去溶剂和反溶剂，并干燥该膜。

28. 发明授权

US07267859B1 Thick porous anodic alumina films and nanowire arrays grown on a solid substrate 失效
标题翻译：在固体基底上生长的厚多孔阳极氧化铝膜和纳米线阵列
公开(公告)号：US07267859B1
公开(公告)日：2007-09-11
申请号：US10303653
申请日：2002-11-25
申请人： Oded Rabin , Paul R. Herz , Mildred S. Dresselhaus , Akintunde I. Akinwande , Yu-Ming Lin
发明人： Oded Rabin , Paul R. Herz , Mildred S. Dresselhaus , Akintunde I. Akinwande , Yu-Ming Lin
IPC分类号： B32B3/10 , B32B9/00 , B32B15/00 , G03C5/00 , C23C28/00
CPC分类号： C23C14/024 , B82Y30/00 , C23C14/16 , C23C14/5873 , C30B7/00 , C30B7/005 , C30B29/605 , H01L35/32 , H01L35/34 , Y10T156/10 , Y10T428/12486 , Y10T428/1259 , Y10T428/24273 , Y10T428/24322 , Y10T428/24917
摘要： The presently disclosed invention provides for the fabrication of porous anodic alumina (PAA) films on a wide variety of substrates. The substrate comprises a wafer layer and may further include an adhesion layer deposited on the wafer layer. An anodic alumina template is formed on the substrate. When a rigid substrate such as Si is used, the resulting anodic alumina film is more tractable, easily grown on extensive areas in a uniform manner, and manipulated without danger of cracking. The substrate can be manipulated to obtain free-standing alumina templates of high optical quality and substantially flat surfaces PAA films can also be grown this way on patterned and non-planar surfaces. Furthermore, under certain conditions the resulting PAA is missing the barrier layer (partially or completely) and the bottom of the pores can be readily accessed electrically. The resultant film can be used as a template for forming an array of nanowires wherein the nanowires are deposited electrochemically into the pores of the template. By patterning the electrically conducting adhesion layer, pores in different areas of the template can be addressed independently, and can be filled electrochemically by different materials. Single-stage and multi-stage nanowire-based thermoelectric devices, consisting of both n-type and p-type nanowires, can be assembled on a silicon substrate by this method.
摘要翻译：目前公开的发明提供了在各种基底上制造多孔阳极氧化铝（PAA）膜。衬底包括晶片层，并且还可以包括沉积在晶片层上的粘附层。在基板上形成阳极氧化铝模板。当使用诸如Si的刚性基材时，所得的阳极氧化铝膜更易于处理，容易在均匀的方式在广泛的区域生长，并且操作而没有开裂的危险。可以操作基底以获得高光学质量的自立式氧化铝模板和基本平坦的表面。也可以在图案化和非平面表面上生长PAA膜。此外，在某些条件下，所得PAA缺少阻挡层（部分或完全），并且孔的底部可以容易地电接触。所得膜可以用作形成纳米线阵列的模板，其中纳米线电化学沉积到模板的孔中。通过图案化导电粘合层，可以独立地解决模板的不同区域中的孔，并且可以通过不同的材料电化学填充。通过这种方法，可以在硅衬底上组装由n型和p型纳米线组成的单级和多级纳米线型热电装置。

29. 发明申请

US20070128762A1 Growing crystaline structures on demand 审中-公开
标题翻译：根据需要生长结晶结构
公开(公告)号：US20070128762A1
公开(公告)日：2007-06-07
申请号：US11292982
申请日：2005-12-02
申请人： Joanna Aizenberg , Yong-Jin Han
发明人： Joanna Aizenberg , Yong-Jin Han
IPC分类号： H01L51/40 , C30B11/00 , H01L21/20
CPC分类号： A61K6/033 , C30B7/005 , C30B35/00 , Y10T117/10
摘要： An apparatus comprising a substrate having a surface with at least one crystallization nucleation site located thereon. The apparatus further comprises a second substrate having a second surface. The second surface is configured to maintain a crystallization starting material in an amorphous state or an initial crystalline state. The crystallization nucleation site is configured to impose a property on the crystallization starting material
摘要翻译：一种装置，包括具有位于其上的至少一个结晶成核位置的表面的基底。该装置还包括具有第二表面的第二基板。第二表面被配置为保持结晶起始材料处于非晶态或初始结晶状态。结晶成核位置被配置为对结晶起始材料施加特性

30. 发明申请

US20060172133A1 Synthesis of highly luminescent colloidal particles 审中-公开
标题翻译：高发光胶体颗粒的合成
公开(公告)号：US20060172133A1
公开(公告)日：2006-08-03
申请号：US11206403
申请日：2005-08-17
申请人： Imad Naasani
发明人： Imad Naasani
IPC分类号： B32B5/16 , B05D7/00
CPC分类号： B82Y15/00 , B82Y5/00 , B82Y30/00 , C09K11/02 , C09K11/565 , C09K11/883 , C30B7/005 , C30B29/605 , G01N33/588 , Y10S977/882 , Y10S977/896 , Y10T428/2991
摘要： The present invention includes compositions and methods for their used wherein the compositions include clusters of coated fluorescent nanocrystals having a select size formed by controlled aggregation of individual coated nanocrystals.
摘要翻译：本发明包括其使用的组合物和方法，其中组合物包括具有通过单个包被的纳米晶体的受控聚集形成的选择尺寸的涂覆的荧光纳米晶体簇。

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