专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08586456B2 Use of CL2 and/or HCL during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用CL2和/或HCL
公开(公告)号：US08586456B2
公开(公告)日：2013-11-19
申请号：US13149865
申请日：2011-05-31
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： C23C16/24 , H01L21/20 , H01L21/36
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

22. 发明授权

US08029620B2 Methods of forming carbon-containing silicon epitaxial layers 有权
标题翻译：形成含碳硅外延层的方法
公开(公告)号：US08029620B2
公开(公告)日：2011-10-04
申请号：US11831055
申请日：2007-07-31
申请人： Yihwan Kim , Zhiyuan Ye , Ali Zojaji
发明人： Yihwan Kim , Zhiyuan Ye , Ali Zojaji
IPC分类号： C30B25/12 , C30B25/14
CPC分类号： C30B25/02 , C30B29/06
摘要： In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2) forming a carbon-containing silicon layer on the substrate, the carbon-containing silicon layer having at least one of an initial carbon concentration, a thickness and a deposition time selected based on the selected target carbon concentration; and (3) forming a non-carbon-containing silicon layer on the carbon-containing silicon layer prior to etching. Numerous other aspects are provided.
摘要翻译：在第一方面，提供了一种在衬底上形成外延层堆叠的方法。该方法包括（1）选择外延层堆叠的目标碳浓度; （2）在基板上形成含碳硅层，所述含碳硅层具有基于所选择的目标碳浓度选择的初始碳浓度，厚度和沉积时间中的至少一种; 和（3）在蚀刻之前在含碳硅层上形成非碳的硅层。提供了许多其他方面。

23. 发明授权

US07732305B2 Use of Cl2 and/or HCl during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用Cl2和/或HCl
公开(公告)号：US07732305B2
公开(公告)日：2010-06-08
申请号：US11494903
申请日：2006-07-28
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

24. 发明授权

US07732269B2 Method of ultra-shallow junction formation using Si film alloyed with carbon 有权
标题翻译：使用与碳合金化的Si膜的超浅结结形成方法
公开(公告)号：US07732269B2
公开(公告)日：2010-06-08
申请号：US11742932
申请日：2007-05-01
申请人： Yihwan Kim , Majeed A. Foad , Yonah Cho , Zhiyuan Ye , Ali Zojaji , Errol Sanchez
发明人： Yihwan Kim , Majeed A. Foad , Yonah Cho , Zhiyuan Ye , Ali Zojaji , Errol Sanchez
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/7848 , H01L21/02378 , H01L21/02381 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L21/2233 , H01L21/26513 , H01L29/165 , H01L29/66287 , H01L29/6656 , H01L29/66628 , H01L29/66636
摘要： A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.
摘要翻译：提供了一种在基板上形成超浅结的方法。在某些实施例中，提供了在衬底上形成超浅结的方法。将基底放置在处理室中。硅基层沉积在基底上。硅碳层暴露于掺杂剂。将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实际退火。在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。在某些实施方案中，提供具有突变p-n结的结构。

25. 发明授权

US07700424B2 Method of forming an embedded silicon carbon epitaxial layer 有权
标题翻译：形成嵌入式硅碳外延层的方法
公开(公告)号：US07700424B2
公开(公告)日：2010-04-20
申请号：US12038288
申请日：2008-02-27
申请人： John Boland , Zhiyuan Ye , Yihwan Kim
发明人： John Boland , Zhiyuan Ye , Yihwan Kim
IPC分类号： H01L21/336
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02639 , H01L29/165 , H01L29/78 , H01L29/7848
摘要： Methods for forming embedded epitaxial layers containing silicon and carbon are disclosed. Specific embodiments pertain to the formation embedded epitaxial layers containing silicon and carbon on silicon wafers. In specific embodiments an epitaxial layer of silicon and carbon is non-selectively formed on a substrate or silicon wafer, portions of this layer are removed to expose the underlying substrate or silicon wafer, and an epitaxial layer containing silicon is formed on the exposed substrate or silicon wafers. In specific embodiments, gates are formed on the resulting silicon-containing epitaxial layers.
摘要翻译：公开了用于形成包含硅和碳的嵌入式外延层的方法。具体实施方案涉及在硅晶片上形成包含硅和碳的嵌入式外延层的形成。在具体实施方案中，在衬底或硅晶片上非选择性地形成硅和碳的外延层，去除该层的部分以暴露下面的衬底或硅晶片，并且在暴露的衬底上形成包含硅的外延层，硅片。在具体实施例中，在所得到的含硅外延层上形成栅极。

26. 发明授权

US08927066B2 Method and apparatus for gas delivery 有权
标题翻译：气体输送方法和装置
公开(公告)号：US08927066B2
公开(公告)日：2015-01-06
申请号：US13097831
申请日：2011-04-29
申请人： Zhiyuan Ye , Yihwan Kim
发明人： Zhiyuan Ye , Yihwan Kim
IPC分类号： C23C16/448 , C23C16/455
CPC分类号： C23C16/4481 , C23C16/45512 , C23C16/45557 , C23C16/45561 , Y10T137/0318 , Y10T137/0329 , Y10T137/0335 , Y10T137/877 , Y10T436/12
摘要： Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction.
摘要翻译：本文公开了气体输送的方法和装置。在一些实施方案中，气体输送系统包括用于将固体或液体形式的前体储存的安瓿，连接到安瓿的第一导管，并且具有联接到第一气体源的第一端，以将前体的蒸汽从安瓿吸入，第一管道，第二管道，其在位于安瓿下游的第一连接处联接到第一管道，并且具有联接到第二气体源的第一端和联接到处理室的第二端，以及被配置为加热安瓿和至少第一管道的从安瓿到第二管道的第一部分，并仅加热第二管道的第二部分，其中第二管道的第二部分包括第一连接部。

27. 发明授权

US08207023B2 Methods of selectively depositing an epitaxial layer 有权
标题翻译：选择性沉积外延层的方法
公开(公告)号：US08207023B2
公开(公告)日：2012-06-26
申请号：US12849387
申请日：2010-08-03
申请人： Zhiyuan Ye , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Saurabh Chopra , Yihwan Kim
IPC分类号： H01L21/00 , H01L21/84 , H01L21/7127 , H01L21/336 , H01L21/20 , H01L21/36 , H01L21/31
CPC分类号： H01L21/02532 , C23C16/325 , C23C16/56 , C30B25/04 , C30B25/14 , C30B25/18 , C30B33/12 , H01L21/02381 , H01L21/02538 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L21/3065 , Y10S438/929
摘要： Methods for selectively depositing an epitaxial layer are provided herein. In some embodiments, providing a substrate having a monocrystalline first surface and a non-monocrystalline second surface; exposing the substrate to a deposition gas to deposit a layer on the first and second surfaces, the layer comprising a first portion deposited on the first surfaces and a second portion deposited on the second surfaces; and exposing the substrate to an etching gas comprising a first gas comprising hydrogen and a halogen and a second gas comprising at least one of a Group III, IV, or V element to selectively etch the first portion of the layer at a slower rate than the second portion of the layer. In some embodiments, the etching gas comprises hydrogen chloride (HCl) and germane (GeH4).
摘要翻译：本文提供了选择性沉积外延层的方法。在一些实施方案中，提供具有单晶第一表面和非单晶第二表面的基材; 将衬底暴露于沉积气体以在第一和第二表面上沉积层，该层包括沉积在第一表面上的第一部分和沉积在第二表面上的第二部分; 以及将所述衬底暴露于蚀刻气体，所述蚀刻气体包括包含氢和卤素的第一气体和包含III，IV或V族元素中的至少一种的第二气体，以选择性地蚀刻所述层的所述第一部分，第二部分的层。在一些实施方案中，蚀刻气体包括氯化氢（HCl）和锗烷（GeH 4）。

28. 发明授权

US07960236B2 Phosphorus containing Si epitaxial layers in N-type source/drain junctions 有权
标题翻译：在N型源极/漏极结中含有Si外延层的磷
公开(公告)号：US07960236B2
公开(公告)日：2011-06-14
申请号：US11957820
申请日：2007-12-17
申请人： Saurabh Chopra , Zhiyuan Ye , Yihwan Kim
发明人： Saurabh Chopra , Zhiyuan Ye , Yihwan Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L29/66628 , H01L29/7834 , Y10T428/24612
摘要： Methods for formation of epitaxial layers containing n-doped silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source. An epitaxial layer may have considerable tensile stress which may be created in a significant amount by a high concentration of n-dopant. A layer having n-dopant may also have substitutional carbon. Phosphorus as an n-dopant with a high concentration is provided. A substrate having an epitaxial layer with a high level of n-dopant is also disclosed.
摘要翻译：公开了形成含有n掺杂硅的外延层的方法。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施例中，n掺杂外延层的形成包括使处理室中的衬底暴露于包括硅源，碳源和n-掺杂源的沉积气体。外延层可能具有相当大的拉伸应力，这可以通过高浓度的n-掺杂物以显着的量产生。具有n-掺杂剂的层也可以具有取代的碳。提供了作为高浓度的n掺杂剂的磷。还公开了具有高水平的n掺杂剂的外延层的衬底。

29. 发明授权

US07776698B2 Selective formation of silicon carbon epitaxial layer 有权
标题翻译：选择性形成硅碳外延层
公开(公告)号：US07776698B2
公开(公告)日：2010-08-17
申请号：US11867933
申请日：2007-10-05
申请人： Zhiyuan Ye , Saurabh Chopra , Andrew Lam , Yihwan Kim
发明人： Zhiyuan Ye , Saurabh Chopra , Andrew Lam , Yihwan Kim
IPC分类号： H01L21/336 , H01L21/8238 , H01L21/36 , H01L21/311
CPC分类号： H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02636 , H01L29/1054 , H01L29/7833
摘要： Methods for formation of epitaxial layers containing n-doped silicon are disclosed, including methods for the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. Formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source at a first temperature and pressure and then exposing the substrate to an etchant at a second higher temperature and a higher pressure than during deposition.
摘要翻译：公开了用于形成包含n掺杂硅的外延层的方法，包括用于在半导体器件中形成和处理外延层的方法，例如金属氧化物半导体场效应晶体管（MOSFET）器件。 n掺杂外延层的形成包括在第一温度和压力下将工艺室中的衬底暴露于包括硅源，碳源和n-掺杂剂源的沉积气体，然后在第二温度和压力下将衬底暴露于蚀刻剂更高的温度和更高的压力比沉积期间。

30. 发明申请

US20090093094A1 Selective Formation of Silicon Carbon Epitaxial Layer 有权
标题翻译：硅碳外延层的选择性形成
公开(公告)号：US20090093094A1
公开(公告)日：2009-04-09
申请号：US11867933
申请日：2007-10-05
申请人： Zhiyuan Ye , Saurabh Chopra , Andrew Lam , Yihwan Kim
发明人： Zhiyuan Ye , Saurabh Chopra , Andrew Lam , Yihwan Kim
IPC分类号： H01L21/365 , H01L21/336
CPC分类号： H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02636 , H01L29/1054 , H01L29/7833
摘要： Methods for formation of epitaxial layers containing n-doped silicon are disclosed, including methods for the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. Formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source at a first temperature and pressure and then exposing the substrate to an etchant at a second higher temperature and a higher pressure than during deposition.
摘要翻译：公开了用于形成包含n掺杂硅的外延层的方法，包括用于在半导体器件中形成和处理外延层的方法，例如金属氧化物半导体场效应晶体管（MOSFET）器件。 n掺杂外延层的形成包括在第一温度和压力下将工艺室中的衬底暴露于包括硅源，碳源和n-掺杂剂源的沉积气体，然后在第二温度和压力下将衬底暴露于蚀刻剂更高的温度和更高的压力比沉积期间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式