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21. 发明授权

US07892956B2 Methods of manufacture of vertical nanowire FET devices 有权
标题翻译：垂直纳米线FET器件的制造方法
公开(公告)号：US07892956B2
公开(公告)日：2011-02-22
申请号：US11860459
申请日：2007-09-24
申请人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
发明人： Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
IPC分类号： H01L21/3205
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02521 , H01L21/02628 , H01L21/02639 , H01L29/0676 , H01L29/42392 , H01L29/66742 , H01L29/775 , H01L29/78642
摘要： A vertical Field Effect Transistor (FET) comprising a vertical semiconductor nanowire is formed by the following steps. Create a columnar pore in a bottom dielectric layer formed on a bottom electrode. Fill the columnar pore by plating a vertical semiconductor nanowire having a bottom end contacting the bottom electrode. Form a doped source region and a doped drain region in the vertical semiconductor nanowire thereby forming an FET device with a FET channel region between the source region and a drain region, which are formed in distal ends of the vertical semiconductor nanowire. Form a gate dielectric layer around the channel region of the vertical semiconductor nanowire. Then form a gate electrode around the gate dielectric layer. Form a top electrode contacting a top end of the vertical semiconductor nanowire.
摘要翻译：通过以下步骤形成包括垂直半导体纳米线的垂直场效应晶体管（FET）。在形成在底部电极上的底部电介质层中形成柱状孔。通过电镀具有与底部电极接触的底端的垂直半导体纳米线来填充柱状孔。在垂直半导体纳米线中形成掺杂的源极区域和掺杂的漏极区域，从而形成在垂直半导体纳米线的末端形成的源极区域和漏极区域之间的FET沟道区域的FET器件。在垂直半导体纳米线的沟道区周围形成栅介电层。然后在栅介电层周围形成栅电极。形成与垂直半导体纳米线的顶端接触的顶部电极。

22. 发明申请

US20100188774A1 PLANAR MAGNETIC WRITER HAVING OFFSET PORTIONS 有权
标题翻译：平面磁性写字板
公开(公告)号：US20100188774A1
公开(公告)日：2010-07-29
申请号：US12358503
申请日：2009-01-23
申请人： Robert Glenn Biskeborn , Lubomyr T. Romankiw , Steven Erik Steen , Bucknell Chapman Webb
发明人： Robert Glenn Biskeborn , Lubomyr T. Romankiw , Steven Erik Steen , Bucknell Chapman Webb
IPC分类号： G11B5/17
CPC分类号： G11B5/29 , G11B5/1272 , G11B5/17 , G11B5/1871
摘要： A magnetic head in one embodiment includes a bottom pole; a top pole positioned above a plane extending through the bottom pole and parallel to a plane of deposition of the bottom pole, wherein the top pole is at least partially offset from the bottom pole in a direction parallel to a plane of deposition of the top pole; a first write gap in the top pole; and a first coil for generating a magnetic flux across the first write gap. A method in one embodiment includes forming a bottom pole; forming a top pole above a plane extending through the bottom pole and parallel to a plane of deposition of the bottom pole, wherein the top pole is at least partially offset from the bottom pole in a direction parallel to a plane of deposition of the top pole, wherein at least one write gap is formed in the top pole; forming side poles for coupling the top and bottom poles; and forming a first coil for generating a magnetic flux across the first write gap.
摘要翻译：一个实施例中的磁头包括底极; 位于平面延伸穿过底极并平行于底极沉积平面的平面上方的顶极，其中顶极在平行于顶极沉积平面的方向上至少部分地偏离底极 ; 顶极的第一个写入间隙; 以及用于在所述第一写入间隙上产生磁通量的第一线圈。一个实施例中的方法包括形成底极; 在平行于所述底极的平面的平面上方形成顶极，所述顶极平行于所述底极的沉积平面，其中所述顶极至少部分地偏离所述底极，所述方向平行于所述顶极的沉积平面，其中在所述顶极中形成至少一个写入间隙; 形成用于联接顶极和底极的侧极; 以及形成用于在所述第一写入间隙上产生磁通量的第一线圈。

23. 发明申请

US20080166858A1 SELF-CONSTRAINED ANISOTROPIC GERMANIUM NANOSTRUCTURE FROM ELECTROPLATING 失效
标题翻译：电镀的自约束非均质锗原子纳米结构
公开(公告)号：US20080166858A1
公开(公告)日：2008-07-10
申请号：US11620391
申请日：2007-01-05
申请人： Guy Cohen , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
发明人： Guy Cohen , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
IPC分类号： H01L21/77
CPC分类号： C25D3/54 , B82Y10/00 , C25D5/022 , C25D7/123 , H01L21/0237 , H01L21/02532 , H01L21/02603 , H01L21/02628 , H01L21/02639 , Y10S977/762
摘要： A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation.
摘要翻译：提供包括锗的纳米结构，其包括直径小于1微米的导线和宽度小于1微米的与基底接触并从基底向外延伸的纳米结构以及制备方法。

24. 发明授权

US5471092A Metallurgical joint including a stress release layer 失效
标题翻译：包括应力释放层的冶金接头
公开(公告)号：US5471092A
公开(公告)日：1995-11-28
申请号：US360528
申请日：1994-12-21
申请人： Chin-Jong Chan , Jei-Wei Chang , Lubomyr T. Romankiw
发明人： Chin-Jong Chan , Jei-Wei Chang , Lubomyr T. Romankiw
IPC分类号： H01L21/52 , H01L23/12 , H01L23/485 , H05K3/34 , H01L23/48 , H01L29/46
CPC分类号： H01L24/10 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15787
摘要： A metallurgical joint structure between two workpieces to be joined by soldering or brazing includes a stress release layer of a low yield point metal, preferably silver, gold, copper, palladium or platinum. The joint structure also includes a juxtaposed barrier layer to prevent the diffusion of a solder element, such as tin, to the stress release layer. Preferred barrier layers are chromium, titanium-tungsten and tantalum. Preferably, the joint includes one or more stress relief layer and associated barrier layer combinations in the joint structure for improved joint reliability.
摘要翻译：通过焊接或钎焊连接的两个工件之间的冶金接头结构包括低屈服点金属，优选银，金，铜，钯或铂的应力释放层。接头结构还包括并排的阻挡层，以防止诸如锡的焊料元素扩散到应力释放层。优选的阻挡层是铬，钛 - 钨和钽。优选地，接头包括一个或多个应力消除层和联接结构中的相关联的阻挡层组合，以改善接头的可靠性。

25. 发明授权

US5388019A Magnetic thin film structures fabricated with edge closure layers 失效
标题翻译：用边缘封闭层制造的磁性薄膜结构
公开(公告)号：US5388019A
公开(公告)日：1995-02-07
申请号：US163670
申请日：1993-12-07
申请人： Bernell E. Argyle , Thomas C. Arnoldussen , Thomas J. Beaulieu , Dean A. Herman, Jr. , Sol Krongelb , Hin P. E. Lee , Daniel A. Nepela , Bojan Petek , Lubomyr T. Romankiw , John C. Slonczewski
发明人： Bernell E. Argyle , Thomas C. Arnoldussen , Thomas J. Beaulieu , Dean A. Herman, Jr. , Sol Krongelb , Hin P. E. Lee , Daniel A. Nepela , Bojan Petek , Lubomyr T. Romankiw , John C. Slonczewski
IPC分类号： G11B5/31 , H01F10/32 , H01F41/34 , G11B5/147
CPC分类号： B82Y25/00 , H01F10/3268 , H01F41/34 , Y10T29/49032 , Y10T29/49034
摘要： Magnetic thin film structures are disclosed including a laminate of a layer of nonmagnetic material sandwiched between first and second layers of magnetic material and at least one edge closure layer of magnetic material disposed on a side edge of the laminate with the edge closure layer being in magnetic contact with the first and second layers of magnetic material. The edge closure layer eliminates magnetic edge closure domains and magnetic edge-curling walls in the yoke and poletip regions, or in a fluxguide of a magnetic recording head to substantially eliminate Barkhausen noise and wall network instabilities. Multiple layer laminates are also disclosed having a plurality of nonmagnetic layers each of which are sandwiched between layers of magnetic material and wherein the laminate includes edge closure layers that contact all the magnetic layers. Several methods are disclosed for fabricating the laminate. In one class of technique, the side edges are deposited together with a top layer in a single plating operation. In an another embodiment, the side edge closure layers are separately plated. Another embodiment provides for a layer of antiferromagnetic material deposited between the nonmagnetic layer and one of the magnetic layers to provide additional anisotropy.
摘要翻译：公开了磁性薄膜结构，其包括夹在第一和第二磁性材料层之间的非磁性材料层的叠层，以及设置在层压板的侧边缘上的至少一个磁性材料的边缘封闭层，边缘封闭层处于磁性与第一和第二层磁性材料接触。边缘封闭层消除磁轭和poletip区域中的磁边缘封闭域和磁性边缘卷曲壁，或者在磁记录头的磁通导向器中消除巴克豪森噪声和墙网络不稳定性。还公开了多层层压板，其具有多个非磁性层，每个非磁性层都夹在磁性材料层之间，并且其中层压板包括接触所有磁性层的边缘封闭层。公开了制造层压板的几种方法。在一类技术中，在单个电镀操作中，侧边缘与顶层一起沉积在一起。在另一个实施例中，侧边缘封闭层被单独地电镀。另一个实施例提供沉积在非磁性层和一个磁性层之间的反铁磁材料层，以提供额外的各向异性。

26. 发明授权

US4497692A Laser-enhanced jet-plating and jet-etching: high-speed maskless patterning method 失效
标题翻译：激光增强喷镀和喷射蚀刻：高速无掩模图案化方法
公开(公告)号：US4497692A
公开(公告)日：1985-02-05
申请号：US504016
申请日：1983-06-13
申请人： Mordechai H. Gelchinski , Lubomyr T. Romankiw , Donald R. Vigliotti , Robert J. Von Gutfeld
发明人： Mordechai H. Gelchinski , Lubomyr T. Romankiw , Donald R. Vigliotti , Robert J. Von Gutfeld
IPC分类号： H01L21/306 , C23F1/00 , C25D5/02 , C25D5/08 , C25F3/14 , H05K3/06 , H05K3/24 , C25D21/10 , C25F3/02
CPC分类号： C23F1/00 , C25D5/024 , C25D5/026 , C25F3/14 , H05K3/068 , H05K3/241
摘要： This metal deposition/material removal technique modifies free-standing or submerged jet plating with an electromagnetic energy beam such as an intense laser beam, directed collinearly along the jet. Experiments were made to deposit gold contact areas on nickel plated beryllium-copper substrates used for microelectronic connectors. The deposits are found to be crack-free and dense, possessing excellent adhesion to the substrate. Deposition rates for 0.05 cm diameter gold spots are on the order of 10 micrometers per second.
摘要翻译：这种金属沉积/材料去除技术用电磁能束（例如强激光束）修改独立喷射镀层或浸没喷镀，沿射流线性地引导。进行实验以在用于微电子连接器的镀镍铍铜基底上沉积金接触区域。发现沉积物是无裂纹和致密的，具有优异的与基材的粘合性。 0.05厘米直径金点的沉积速率约为每秒10微米。

27. 发明授权

US4432855A Automated system for laser mask definition for laser enhanced and conventional plating and etching 失效
标题翻译：用于激光增强和常规电镀和蚀刻的激光掩模定义自动化系统
公开(公告)号：US4432855A
公开(公告)日：1984-02-21
申请号：US429657
申请日：1982-09-30
申请人： Lubomyr T. Romankiw , Robert J. von Gutfeld
发明人： Lubomyr T. Romankiw , Robert J. von Gutfeld
IPC分类号： C23F4/00 , C23C18/14 , C23C18/16 , C23C18/18 , C23C18/31 , C23C18/32 , C23C18/34 , C23C18/38 , C23C18/40 , C23C18/42 , C23C18/44 , C23F1/00 , C25D5/00 , C25D5/02 , C25F3/14 , C25F7/00 , H05K3/00 , H05K3/07 , H05K3/10 , H05K3/24 , C25D17/00
CPC分类号： H05K3/243 , C25D21/02 , C25D5/00 , C25D5/024 , C25F3/14 , H05K2203/107 , H05K2203/1545 , H05K3/0032 , H05K3/07 , H05K3/108 , H05K3/241
摘要： A laser enhanced electroplating system or etching system or conventional electroplating or etching system includes a continuous electrochemical processing system with a sheet of material to be treated electrochemically passed from a supply roller to a plating bath and out over an exit roller with the plating system under automatic control. A rinse-tank is also proved in series with the plating tank. The sheet to be treated electrochemically can be coated with a protective film which prevents electrochemical action from occurring where it is present, but which sheet can be removed in a predetermined location. One removes the protective film where desired to provide a mask by means of a laser which is scanned under automatic control. Then the plating or etching operation occurs through the openings in the mask. A rinse-tank contains a solvent capable of removing the mask from the sheet subsequent to the plating or etching operation. An array of lasers can be employed. An array of lasers can be multiplexed, synchronously activated or pulsed. The electrochemical operation can be performed with the concomitant application of energy from the laser in order to enhance the chemical action in areas from which the masking (protective) film has been removed. The laser can be scanned by means of a mirror, which oscillates or can be fixed. The masking material is composed of an organic material such as glycol phthalate, paraffin, photoresist, gelatin, etc.
摘要翻译：激光增强电镀系统或蚀刻系统或传统的电镀或蚀刻系统包括连续的电化学处理系统，其具有待处理的材料片材，其从电源辊电镀到镀浴，并且在电镀系统自动下出口的出口辊控制。冲洗槽也与镀槽串联证明。待电化学处理的片材可以涂覆保护膜，该保护膜防止在存在电化学作用的地方发生，而在预定位置可以除去哪种片材。通过在自动控制下扫描的激光器，可以在需要时去除保护膜以提供掩模。然后通过掩模中的开口进行电镀或蚀刻操作。漂洗槽含有能够在电镀或蚀刻操作之后从片材上除去掩模的溶剂。可以采用激光器阵列。激光器阵列可以被复用，同步激活或脉冲。电化学操作可以通过伴随来自激光器的能量的应用来进行，以增强已经除去掩蔽（保护）膜的区域中的化学作用。可以通过镜子扫描激光，其可以振荡或固定。掩蔽材料由有机材料如邻苯二甲酸二醇，石蜡，光致抗蚀剂，明胶等组成。

28. 发明授权

US4281057A Variable pre-spin drying time control of photoresists thickness 失效
标题翻译：可变预旋转干燥时间控制光刻胶厚度
公开(公告)号：US4281057A
公开(公告)日：1981-07-28
申请号：US766308
申请日：1977-02-07
申请人： Eugene E. Castellani , Ian M. Croll , Aloysius T. Pfeiffer , Lubomyr T. Romankiw
发明人： Eugene E. Castellani , Ian M. Croll , Aloysius T. Pfeiffer , Lubomyr T. Romankiw
IPC分类号： G03F7/16 , G03C5/00 , G03C1/76 , G03C1/86 , G03C1/94
CPC分类号： G03F7/162 , Y10S430/136
摘要： Resist is applied to a surface with a syringe, or other suitable dropper, equipped with a millipore filter to remove contaminants. The surface is completely flooded with resist. Resist is allowed to remain on the surface of the evaporated metal for a period of time prior to spin coating. Allowing resist to remain on the surface prior to coating produces a uniform film. For a 2 micron thick uniform resist coating, a minimum of 15 seconds is allowed prior to spinning while in the case of a 4 micron thick resist coating a much longer period is allowed.For the application of a 2 micron film, the resist material after partial drying for approximately 15 seconds is spun at 2000 rpm for 30 seconds. In order to apply a 5 micron thick resist film, resist is spun at 2000 rpm for 30 seconds after partial drying for approximately 10 minutes.
摘要翻译：用注射器或其他合适的滴管将抗蚀剂施加到表面上，该滴管配备有微孔过滤器以除去污染物。表面完全充斥着抗蚀剂。在旋转涂布之前，允许抗蚀剂在蒸发的金属的表面上保留一段时间。允许抗蚀剂在涂覆之前保留在表面上产生均匀的膜。对于2微米厚的均匀抗蚀剂涂层，在纺丝之前允许至少15秒，而在4微米厚的抗蚀剂涂层的情况下允许更长的时间。为了施加2微米的膜，将部分干燥约15秒的抗蚀剂材料在2000rpm下旋转30秒。为了施加5微米厚的抗蚀剂膜，将抗蚀剂在部分干燥约10分钟后以2000rpm旋转30秒。

29. 发明授权

US08871560B2 Plasma annealing of thin film solar cells 有权
标题翻译：薄膜太阳能电池的等离子体退火
公开(公告)号：US08871560B2
公开(公告)日：2014-10-28
申请号：US13571048
申请日：2012-08-09
申请人： Shafaat Ahmed , Sukjay Chey , Hariklia Deligianni , Lubomyr T. Romankiw
发明人： Shafaat Ahmed , Sukjay Chey , Hariklia Deligianni , Lubomyr T. Romankiw
IPC分类号： H01L31/032 , H01L31/0749
CPC分类号： H01L31/0326 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor chalcogenide material. Annealing the solar cell base structure is performed by exposing an outer layer of the solar cell base structure to a plasma.
摘要翻译：实施例涉及一种用于退火太阳能电池结构的方法，包括在太阳能电池基底结构的钼（Mo）层上形成吸收层。太阳能电池基体结构包括衬底，Mo层位于衬底上。吸收层包括半导体硫族化物材料。通过将太阳能电池基底结构的外层暴露于等离子体来进行太阳能电池基体结构的退火。

30. 发明申请

US20120061790A1 Structure and Method of Fabricating a CZTS Photovoltaic Device by Electrodeposition 有权
标题翻译：通过电沉积制造CZTS光伏器件的结构和方法
公开(公告)号：US20120061790A1
公开(公告)日：2012-03-15
申请号：US12878746
申请日：2010-09-09
申请人： Shafaat Ahmed , Hariklia Deligianni , Lubomyr T. Romankiw , Kejia Wang
发明人： Shafaat Ahmed , Hariklia Deligianni , Lubomyr T. Romankiw , Kejia Wang
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0272 , C25D5/10 , C25D5/50 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/0224 , H01L31/0326 , H01L31/072 , H01L31/18 , H01L2924/10822 , Y02E10/50
摘要： Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.
摘要翻译：提供了使用电沉积在二极管（如太阳能电池）中形成吸收层的技术。在一个方面，提供了制造二极管的方法。该方法包括以下步骤。提供基板。在基板上形成背面电极。一个或多个层电沉积在背面电极上，其中至少一个层包含铜，至少一个层包含锌，并且至少一层包括锡。这些层在包含硫源的环境中退火，以在背面电极上形成p型CZTS吸收层。在CZTS吸收层上形成n型半导体层。在n型半导体层上形成透明导电层。还提供二极管。

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