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    • 22. 发明授权
    • Image forming system for single bit image data
    • 单位图像数据的图像形成系统
    • US5602655A
    • 1997-02-11
    • US371608
    • 1995-01-12
    • Naoto ArakawaMasanori SakaiToshihiro KadowakiTetsuya OhnishiToshio Honma
    • Naoto ArakawaMasanori SakaiToshihiro KadowakiTetsuya OhnishiToshio Honma
    • H04N1/46H04N1/62H04N1/50H04N1/56
    • H04N1/62H04N1/46
    • An image forming apparatus and an electronic device for outputting data to the image forming apparatus. The image forming apparatus comprises an interface for inputting single bit image data and a command from an external device, a first store for storing the single bit image data, a second store for receiving and storing color data for coloring the single bit image data, and an image forming device for forming a color image on the basis of the data in the first and second stores. The electronic device includes a first output for outputting single bit image data, a second output for outputting a color number for one pixel of color image data, and a third output for outputting both first multi-level color component data for the single bit image data and second multi-level color component data for the color number.
    • 一种用于向图像形成装置输出数据的图像形成装置和电子装置。 图像形成装置包括用于输入单位图像数据和来自外部设备的命令的接口,用于存储单个位图像数据的第一存储器,用于接收和存储用于着色单个位图像数据的颜色数据的第二存储器,以及 基于第一和第二存储器中的数据形成彩色图像的图像形成装置。 电子设备包括用于输出单位图像数据的第一输出,用于输出彩色图像数据的一个像素的色数的第二输出和用于输出单位图像数据的第一多级彩色分量数据的第三输出 和用于颜色编号的第二多级颜色分量数据。
    • 28. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE HAVING CROSS-POINT STRUCTURE
    • 具有跨点结构的半导体存储器件
    • US20100128512A1
    • 2010-05-27
    • US12089273
    • 2006-09-27
    • Tetsuya OhnishiSyogo Hayashi
    • Tetsuya OhnishiSyogo Hayashi
    • G11C11/22G11C11/00
    • G11C5/063G11C7/18G11C8/10G11C11/1655G11C11/1657G11C11/1659G11C11/22G11C13/0023G11C13/003G11C2213/76G11C2213/77H01L27/101
    • A semiconductor memory device having a cross-point structure comprising a plurality of first electrode wirings extending in the same direction, a plurality of second electrode wirings intersecting with the first electrode wirings, and memory materials for storing data at the intersection points of the first and second electrode wirings has a problem that an effective voltage applied to the memory material fluctuates in a memory cell array due to the voltage drop caused by the wiring resistance of each electrode wiring. The sum of the wiring resistance of the first electrode wiring to a certain intersection point and the wiring resistance of the second electrode wiring to the certain intersection point is substantially constant at any intersection point, and the load resistors for adjusting the fluctuation of the electrode wiring resistances in a memory cell array are connected at least either one of the first and second electrode wirings.
    • 一种具有交叉点结构的半导体存储器件,包括沿相同方向延伸的多个第一电极布线,与第一电极布线相交的多个第二电极布线,以及用于在第一和第二布线的交点处存储数据的存储材料 第二电极布线存在由于由每个电极布线的布线电阻引起的电压降,施加到存储器材料的有效电压在存储单元阵列中波动的问题。 第一电极布线与某一交点的布线电阻和第二电极布线到某一交点的布线电阻之和在任何交点处基本恒定,并且用于调节电极布线的波动的负载电阻 存储单元阵列中的电阻连接在第一和第二电极布线中的至少一个中。