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    • 21. 发明授权
    • Solid-state imaging apparatus
    • 固态成像装置
    • US5572256A
    • 1996-11-05
    • US275748
    • 1994-07-20
    • Yoshitaka EgawaYukio EndoYoshiyuki Matsunaga
    • Yoshitaka EgawaYukio EndoYoshiyuki Matsunaga
    • H04N5/235H04N5/353H04N5/355H04N5/378H04N5/335
    • H04N5/2353H04N5/235H04N5/35581
    • A solid-state imaging apparatus which effects an electronic shutter operation comprises a solid-state imaging device made up of a plurality of photosensitive pixels arranged in a matrix on a semiconductor substrate, a driving circuit for driving the solid-state imaging device and also controlling the photoelectric conversion time of the photosensitive pixel, a vertical CCD for clipping a first signal obtained during a longer photoelectric conversion time in the solid-state imaging device, at a specified level or above, and then adding the clipped signal to a second signal obtained during a shorter photoelectric conversion time, and a signal processing circuit for amplifying and outputting the added signal, and setting an amplification degree for the second signal to a value larger than an amplification factor for the first signal.
    • 实现电子快门操作的固态成像装置包括由在半导体衬底上以矩阵排列的多个感光像素构成的固态成像装置,用于驱动固态成像装置的驱动电路,并且还控制 光敏像素的光电转换时间,用于将在固态成像装置中的较长光电转换时间期间获得的第一信号削减到指定电平或以上的垂直CCD,然后将所述限幅信号与获得的第二信号相加 在较短的光电转换时间期间,以及信号处理电路,用于放大并输出相加的信号,并将第二信号的放大度设置为大于第一信号的放大系数的值。
    • 22. 发明授权
    • Charge-transfer device having an improved charge-sensing section
    • 电荷转移装置具有改进的电荷感测部分
    • US5438211A
    • 1995-08-01
    • US220708
    • 1994-03-31
    • Nobuo NakamuraYoshiyuki MatsunagaYoshihito KoyaYukio Endo
    • Nobuo NakamuraYoshiyuki MatsunagaYoshihito KoyaYukio Endo
    • H01L29/768H01L29/78
    • H01L29/76816H01L29/76841
    • A charge-transfer device contains a high-resistance p-well layer formed in the surface of an n-type semiconductor substrate. In the surface of the well layer, a charge-transfer n-channel layer, a charge storage n-channel layer, a charge release n-channel layer, and a charge release n-type drain are formed continuously. An output gate electrode is provided above the junction of the transfer channel layer and the storage channel layer, with an insulating film interposed therebetween. Provided above the release channel layer is a reset gate electrode with an insulating film interposed therebetween. In the surface of the storage channel layer, a charge-sensing p-channel layer of a charge-sensing transistor is formed. The charge-sensing channel layer is arranged so as to be in contact with neither the transfer channel layer nor the release channel layer. The storage channel layer is arranged so as to contain a first surface portion which adjoins the transfer channel layer and is in contact with a covering insulating film, and a second surface portion which adjoins the release channel layer and is in contact with the covering insulating film. In the surface of the substrate, a p-type source and drain layers of the charge-sensing transistor are formed so as to face each other with the sensing channel interposed therebetween. The potential of the storage channel layer without charges is set higher than that of the release drain layer.
    • 电荷转移装置包含在n型半导体衬底的表面上形成的高电阻p阱层。 在阱层的表面中连续地形成电荷传输n沟道层,电荷存储n沟道层,电荷释放n沟道层和电荷释放型n型漏极。 输出栅电极设置在传输沟道层和存储沟道层的结的上方,隔着绝缘膜。 在释放通道层上方设置有复位栅电极,其间具有绝缘膜。 在存储通道层的表面形成电荷感测晶体管的电荷感应p沟道层。 电荷感测沟道层被布置成与传输沟道层和释放通道层都不接触。 存储通道层被布置成包含邻接传输沟道层并与覆盖绝缘膜接触的第一表面部分和与释放通道层相邻并与覆盖绝缘膜接触的第二表面部分 。 在基板的表面中,电荷感测晶体管的p型源极和漏极层形成为彼此面对,并且其间插入感测通道。 没有电荷的存储通道层的电位被设定为高于释放漏极层的电位。
    • 23. 发明授权
    • Amplification type image pickup apparatus and method of controlling the amplification type image pickup apparatus
    • 放大型图像拾取装置和控制放大型图像拾取装置的方法
    • US07623170B2
    • 2009-11-24
    • US11154604
    • 2005-06-17
    • Nobuo NakamuraYoriko TanakaYoshitaka EgawaShinji OhsawaTadashi SugikiYukio Endo
    • Nobuo NakamuraYoriko TanakaYoshitaka EgawaShinji OhsawaTadashi SugikiYukio Endo
    • H04N5/335
    • H04N5/2355H04N5/235H04N5/35527H04N5/35572H04N5/35581H04N5/372H04N5/3728H04N5/374
    • An image pickup apparatus comprising an array of unit cells, vertical signal lines, and a control circuit. The unit cells are arranged in rows and columns. Each unit cell has a light-receiving device for receiving light and generating an electric charge corresponding to the light, a charge-accumulating section for accumulating the electric charge generated by the light-receiving device, a transfer device for transferring the electric charge from the light-receiving device to the charge-accumulating section, and a charge-limiting device for limiting the electric charge accumulated in the charge-accumulating section. The vertical signal lines extend along the columns of unit cells, respectively, each for receiving a electric data item corresponding to the electric charge accumulated in the charge-accumulating section of any unit cell of the associated column. The control circuit controls each of the unit cells, causing the charge-limiting device to limit the charge generated by the light-receiving device during a first period and transferred to the charge-accumulating section through the transfer device. The charge generated by the light-receiving device during a second period following the first period and transferred to the charge-accumulating section through the transfer device is added to the electric charge accumulated in the charge-accumulating section.
    • 一种图像拾取装置,包括单位单元阵列,垂直信号线和控制电路。 单位单元以行和列排列。 每个单元具有用于接收光并产生与该光相对应的电荷的光接收装置,用于累积由光接收装置产生的电荷的电荷累积部分,用于将电荷从 光接收装置到蓄电部,以及用于限制积蓄在蓄电部中的电荷的充电限制装置。 垂直信号线分别沿着单位单元的列延伸,每个用于接收与相关列的任何单位单元的电荷累积部分中累积的电荷相对应的电数据项。 控制电路控制每个单元电池,使得充电限制装置在第一时段期间限制由光接收装置产生的电荷,并通过传送装置传送到电荷累积部分。 在第一时间段之后的第二时段期间由光接收装置产生的电荷通过传送装置传送到电荷累积部分的电荷被加到累积在电荷累积部分中的电荷中。
    • 24. 发明授权
    • Solid state image sensor device free of influence on optical black level by signal potential change of optical black pixels
    • 固态图像传感器设备不受光学黑色像素的信号电位变化影响
    • US06903768B1
    • 2005-06-07
    • US09349232
    • 1999-07-08
    • Shinji OhsawaYukio EndoYoshitaka Egawa
    • Shinji OhsawaYukio EndoYoshitaka Egawa
    • H01L27/146H04N5/335H04N5/365H04N5/369H04N5/3745H04N5/217
    • H04N5/3658H04N5/361
    • In a solid state image sensor device comprising a cell area wherein unit cells each having photoelectric diodes are arranged in a matrix form on a semiconductor substrate, the cell area being composed of a photo-sensitive pixel region for sensing an image, and an optical black pixel region for defining an optical black level, and a vertical shift register for selecting the unit cells of the image sensing cell array, in a group along each of horizontal lines, and vertical signal lines, each of which reads each of signals from the unit cells selected by turning on an address register by means of the vertical shift register, the vertical signal lines in the optical black pixel region are connected with each other through a wiring. Since the vertical signal lines in the optical black pixel region are connected with each other by a wiring, even if outputs from an optical black pixel region vary in the pixels, the outputs are made averaged and uniform and a variation in fixed pattern noises between the horizontal lines are reduced.
    • 在包括单元区域的固态图像传感器装置中,其中每个具有光电二极管的单位单元以矩阵形式布置在半导体衬底上,所述单元区域由用于感测图像的光敏像素区域和光学黑色 用于定义光学黑色电平的像素区域和用于选择每个水平线的组中的图像感测单元阵列的单位单元的垂直移位寄存器和每个从单元读取每个信号的垂直信号线 通过借助于垂直移位寄存器接通地址寄存器而选择的单元,光学黑色像素区域中的垂直信号线通过布线相互连接。 由于光学黑色像素区域中的垂直信号线通过布线彼此连接,所以即使来自光学黑色像素区域的输出在像素中变化,则输出被平均化和均匀,并且固定图案噪声的变化在 水平线减少。
    • 25. 发明授权
    • Liquid crystal display device
    • 液晶显示装置
    • US06836301B1
    • 2004-12-28
    • US10732357
    • 2003-12-11
    • Satoshi KohtakaTakafumi HashiguchiYukio Endo
    • Satoshi KohtakaTakafumi HashiguchiYukio Endo
    • G02F1136
    • G02F1/1345
    • The liquid crystal display of the present invention includes: a first insulating substrate as an array substrate; display pixels formed in such a manner as to be arranged in array like shape on the first insulating substrate, said display pixels having pixel electrodes electrically connected to each other; a counter substrate formed on a second insulating substrate on which common electrodes are formed; a liquid crystal layer interposed between the first insulating substrate and the second insulating substrate, the first insulating substrate and the second insulating substrate being bonded each other; a transfer electrode for supplying a common electrical potential to common electrodes on the second insulating substrate through a conductive material; wherein the transfer electrode is formed by patterning a conductive thin film that has been formed by the last conductive film forming process of the first insulating substrate; wherein a second conductive metal film, which has been formed in the second conductive film forming process of the first insulating substrate, and is connected to the common electrode potential, and the conductive thin film are connected to each other on the periphery of the transfer electrode through a contact hole or through a direct contact, and the conductive thin film is directly formed on the first insulating substrate at one portion of the center portion of the opening of the transfer electrode.
    • 本发明的液晶显示器包括:作为阵列基板的第一绝缘基板; 以在第一绝缘基板上排列成阵列状的方式形成的显示像素,所述显示像素具有彼此电连接的像素电极; 形成在其上形成有公共电极的第二绝缘基板上的对置基板; 插入在第一绝缘基板和第二绝缘基板之间的液晶层,第一绝缘基板和第二绝缘基板彼此接合; 用于通过导电材料向第二绝缘基板上的公共电极提供公共电位的转移电极; 其中所述转移电极通过图案化由所述第一绝缘基板的最后导电膜形成工艺形成的导电薄膜而形成; 其中在所述第一绝缘基板的第二导电膜形成工艺中形成并连接到所述公共电极电位的所述第二导电金属膜和所述导电薄膜在所述转移电极的周围彼此连接 通过接触孔或通过直接接触,并且导电薄膜直接形成在转印电极的开口的中心部分的一部分的第一绝缘基板上。
    • 28. 发明授权
    • Charge transfer apparatus
    • 电荷转移装置
    • US4369469A
    • 1983-01-18
    • US226904
    • 1981-01-21
    • Yukio EndoOkio Yoshida
    • Yukio EndoOkio Yoshida
    • H01L27/148H04N3/15H04N3/14H04N5/30
    • H04N3/1568H01L27/14831
    • A charge transfer apparatus comprises a pulse generator, a drive circuit for sending forth drive signals having a plurality of voltage levels in accordance with the pulse signals produced from the pulse generator, and a charge coupled device of the frame transfer type which is actuated by the drive signals and in which bias charges are previously injected into the potential wells of the light receiving section. The drive circuit comprises an analog multiplexer for selectively sending forth a D.C. voltage signal in accordance with the pulse signal, during the vertical blanking period, injects an excess amount of bias charges into the potential wells and raises the bottoms of the potential wells to let an excess amount of bias charges overflow the potential wells for combination with holes.
    • 电荷转移装置包括脉冲发生器,用于根据脉冲发生器产生的脉冲信号发送具有多个电压电平的驱动信号的驱动电路和由该脉冲发生器驱动的帧转移型的电荷耦合器件 驱动信号,并且偏置电荷预先注入到光接收部分的势阱中。 驱动电路包括模拟多路复用器,用于根据脉冲信号选择性地发出直流电压信号,在垂直消隐期间,向电位阱注入过量的偏置电荷,并使潜在的阱的底部引出, 过量的偏置电荷溢出潜在的井以与孔组合。
    • 29. 发明授权
    • Arithmetic unit for approximating function
    • 用于近似函数的算术单元
    • US07472149B2
    • 2008-12-30
    • US10924981
    • 2004-08-25
    • Yukio Endo
    • Yukio Endo
    • G06F1/02
    • G06F7/544
    • A look-up table outputs an initial value, an inclination of a straight line and a correction value in response to an entry-of a high-order bit string of an operand. An offset circuit calculates an offset of the low-order bit string. A correction circuit outputs the initial value obtained by adding the correction value to at least one of the initial value and the inclination when the correction is necessary. A multiplier calculates a product of the inclination and the offset. An adder calculates the sum of the initial value and the product.
    • 查询表响应于操作数的高位比特串的入口输出初始值,直线的斜率和校正值。 偏移电路计算低位比特串的偏移量。 校正电路输出当需要校正时将校正值加到初始值和倾斜度中的至少一个而获得的初始值。 乘数计算倾斜和偏移的乘积。 加法器计算初始值和乘积的和。
    • 30. 发明授权
    • High-speed solid-state imaging device capable of suppressing image noise
    • 能够抑制图像噪声的高速固态成像装置
    • US07362366B2
    • 2008-04-22
    • US10875781
    • 2004-06-25
    • Yoshitaka EgawaYoriko TanakaShinji OhsawaYukio EndoHiromi KusakabeNagataka Tanaka
    • Yoshitaka EgawaYoriko TanakaShinji OhsawaYukio EndoHiromi KusakabeNagataka Tanaka
    • H04N3/14
    • H04N5/3658H04N5/3575H04N5/3591H04N5/361H04N5/3698H04N5/374H04N5/3741H04N5/378
    • In a CMOS image sensor, current leakage after a series of noise removing operations has been completed is suppressed in a read operation for each horizontal line, thereby suppressing image noise occurring on the output display screen of the image sensor. There are provided signal storage regions for storing the signals read from the unit cells in the same row selected in the imaging area onto vertical signal lines and horizontal select transistors for sequentially selecting and reading the signals stored in the individual signal storage regions and transferring them to read horizontal signal lines. At least in the period during which the signals are read from the signal storage regions, one of the drain and source of the transistor electrically connected to the signal path between the vertical signal line and horizontal signal line is biased in the reverse direction with respect to the substrate region. Two adjacent ones of the horizontal select transistors form a pair. The horizontal select transistors in each pair share one of the source/drain regions so as to be connected to the horizontal signal line in common, and the others of the source/drain regions are connected to the vertical signal line individually.
    • 在CMOS图像传感器中,对于每个水平线的读取操作,抑制了一系列噪声去除操作之后的电流泄漏,从而抑制了图像传感器的输出显示屏幕上出现的图像噪声。 提供信号存储区域,用于将从成像区域中选择的同一行中的单位单元读取的信号存储到垂直信号线和水平选择晶体管上,用于顺序选择和读取存储在各个信号存储区域中的信号并将其传送到 读取水平信号线。 至少在从信号存储区读取信号的期间中,与垂直信号线和水平信号线之间的信号路径电连接的晶体管的漏极和源极之一相对于 衬底区域。 两个相邻的水平选择晶体管形成一对。 每对中的水平选择晶体管共享源极/漏极区域中的一个,以便与水平信号线共同连接,源极/漏极区域中的另一个分别连接到垂直信号线。