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    • 25. 发明授权
    • Sewing machine having a threading device
    • 缝纫机具有穿线装置
    • US5168821A
    • 1992-12-08
    • US793026
    • 1991-11-15
    • Osamu Kamiya
    • Osamu Kamiya
    • D05B57/06D05B87/02
    • D05B87/02D05B57/34
    • In threading an eyelet of a looper of a sewing machine, a slide member is displaced until a positioning portion of the slide member comes into contact with the looper. In this contact condition, a thread pushing projection for pushing a looper thread is displaced to penetrate into the eyelet of the looper so that the looper thread pushed by the thread pushing projection passes through the eyelet of the looper. The looper thread having passed through the eyelet is grasped by a grasping portion of the slide member. Thereafter, the thread pushing projection is retracted from the eyelet of the looper, and the slide member is returned to an original position, thus completing the threading operation.
    • 在穿线缝纫机的弯针的孔眼时,滑动构件被移动,直到滑动构件的定位部分与弯针接触。 在这种接触状态下,用于推动弯针线的螺纹推动突起被移动以穿透打针器的孔眼,使得由螺纹推动突起推动的弯针线通过穿环器的孔眼。 穿过孔眼的弯针线被滑动构件的把持部抓住。 此后,推动突起从弯针的孔眼缩回,并且滑动构件返回到原始位置,从而完成螺纹操作。
    • 27. 发明授权
    • Photochemical vapor deposition method
    • 光化学气相沉积法
    • US4581249A
    • 1986-04-08
    • US714575
    • 1985-03-21
    • Osamu Kamiya
    • Osamu Kamiya
    • C23C16/48B01J19/12B05D3/06B05D7/24C23C16/32C23C16/42H01L21/285
    • B05D1/60B05D3/06
    • A photochemical vapor deposition method comprises introducing a starting gas into a reaction chamber, irradiating the starting gas with a light energy, and forming a deposition film on a substrate by utilizing a photochemical reaction, characterized in that the plural starting gases are introduced into the reaction chamber and the film is formed on said substrate by causing chemical reactions by irradiating molecules of these starting gases with individual light energy having a wavelength region corresponding to an absorption spectrum of each of said starting gas.A photochemical vapor deposition method comprises introducing a starting gas into a reaction chamber, irradiating the starting gas with a light energy, and forming a deposition film on a substrate by utilizing a photochemical reaction, characterized in that the starting gas is introduced into the reaction chamber and the deposition film is formed on the substrate by causing a chemical reaction by irradiating with light energy having a wavelength region corresponding to an absorption spectrum of said starting gas and irradiating with light energy having gas and irradiating with light energy having a wavelength region corresponding to an absorption spectrum of chemical substance produced from said starting gas.
    • 光化学气相沉积方法包括将起始气体引入反应室中,用光能照射起始气体,并通过利用光化学反应在基底上形成沉积膜,其特征在于将多个起始气体引入反应 并且通过用这些起始气体的分子照射具有对应于每个所述起始气体的吸收光谱的波长区域的单个光能引起化学反应,在所述基板上形成膜。 光化学气相沉积方法包括将起始气体引入反应室中,用光能照射起始气体,并通过利用光化学反应在基底上形成沉积膜,其特征在于将起始气体引入反应室 并且通过用具有对应于所述起始气体的吸收光谱的波长区域的光能照射具有气体的光能并用具有对应于具有气体的波长区域的光能照射的光能照射具有化学反应的方式,在基板上形成沉积膜 从所述起始气体产生的化学物质的吸收光谱。
    • 29. 发明授权
    • Vapor deposition apparatus
    • 蒸镀装置
    • US4226208A
    • 1980-10-07
    • US928435
    • 1978-07-27
    • Keijiro NishidaMitsuo KakeiOsamu KamiyaNobuyuki Sekimura
    • Keijiro NishidaMitsuo KakeiOsamu KamiyaNobuyuki Sekimura
    • C23C14/56C23C13/08
    • C23C14/56Y10S414/139
    • An apparatus for vacuum deposition of a thin film onto the surface of a substrate includes a vacuum container formed by a base plate, a cylindrical side wall and a top plate to accommodate at least four movable sealing caps each having a space adapted to confine a batch of substrates on a carrier of dome shape. The caps move around the center of the base plate. When the caps are stopped to cover respective openings provided through the base plate, there are established a pre-heating, a vapor depositing, a cooling and an air locking chamber, and the batch of processed substrates in the air locking chamber is moved to the outside of the apparatus without disturbing the vacuum in the container. Next, the air locking chamber, after having received a new batch of unprocessed substrates at the space of the cap thereof, is sealed from the ambient atmosphere, and all the caps are advanced one step ahead. The controlled atmosphere in the lower section of the vapor depositing chamber remains almost unchanged during this time to insure that uniform, thin-film layers of deposited material are applied to the substrates. Further, to eliminate fluctuation in quality among manufactured lots, there is provided a novel evaporant feeding mechanism.
    • 用于将薄膜真空沉积到基材表面上的装置包括由基板,圆柱形侧壁和顶板形成的真空容器,以容纳至少四个可移动密封盖,每个可移动密封盖具有适于限制批次的空间 的基板在圆顶形状的载体上。 盖子围绕基板的中心移动。 当盖子被停止以覆盖通过基板提供的各个开口时,建立了预热,气相沉积,冷却和空气锁定室,并且将空气锁定室中的批处理的基板移动到 在设备外部,而不会干扰容器中的真空。 接下来,空气锁定室在其盖的空间处接收到新批次的未处理的基板之后,与环境大气密封,并且所有的盖都向前进一步。 在此期间,气相沉积室下部的受控气氛保持几乎不变,以确保均匀的沉积材料的薄膜层被施加到基底上。 此外,为了消除制造批次之间的质量波动,提供了一种新型的蒸发器供给机构。