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    • 27. 发明授权
    • Substrate processing apparatus and method for manufacturing semiconductor device
    • 基板处理装置及半导体装置的制造方法
    • US08235001B2
    • 2012-08-07
    • US12076508
    • 2008-03-19
    • Atsushi SanoHideharu ItataniMitsuro Tanabe
    • Atsushi SanoHideharu ItataniMitsuro Tanabe
    • C23C16/455C23C16/52C23C16/06C23C16/22
    • C23C16/4408Y10T29/41
    • A substrate processing apparatus and a method for manufacturing a semiconductor device whereby foreign matter can be prevented from being adsorbed on the substrate, by suppressing agitation of foreign matter present in the processing chamber. The substrate processing apparatus comprises a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.
    • 一种基板处理装置和半导体装置的制造方法,通过抑制处理室中存在的异物的搅动,能够防止异物吸附在基板上。 基板处理装置包括用于处理基板的处理室; 处理气体供给管线,用于将处理气体供给到处理室中; 用于将惰性气体供给到处理室中的惰性气体供给管线; 设置在惰性气体供给管线中的惰性气体排出管线,用于排出供入惰性气体供给管线的惰性气体,而不将惰性气体供给到处理室中; 设置在所述惰性气体供给管线中的第一阀,在所述惰性气体供给管路中设置有所述惰性气体排出管线的部分的下游侧; 设置在惰性气体排放管线中的第二阀; 以及排出处理室内部的排气管。
    • 30. 发明授权
    • Substrate processing apparatus and method of manufacturing semiconductor device
    • 基板处理装置及半导体装置的制造方法
    • US07579276B2
    • 2009-08-25
    • US11663179
    • 2005-10-14
    • Hideharu ItataniHidehiro YanaiSadayoshi HoriiAtsushi Sano
    • Hideharu ItataniHidehiro YanaiSadayoshi HoriiAtsushi Sano
    • H01L21/44
    • C23C16/4412
    • To prevent particles from generating by reducing a contact-gas area and improve a purge efficiency by reducing a flow passage capacity. There is provided a substrate processing apparatus, comprising a processing chamber 1 for processing a substrate 2; a substrate carrying port 10 provided on a sidewall of the processing chamber 1, for carrying-in/carrying-out the substrate 2 to/from the processing chamber 1; a holder provided so as to be lifted and lowered in the processing chamber 1, for holding the substrate 2; supply ports 3 and 4 provided above the holder, for supplying gas into the processing chamber 1; an exhaust duct 35 provided on the peripheral part of the holder, for exhausting the gas supplied into the processing chamber 1; and an exhaust port 5 provided below an upper surface of the exhaust duct 35 when the substrate is processed, for exhausting the gas discharged by the exhaust duct 35 outside the processing chamber 1, wherein at least a part of a member constituting the exhaust duct 35 is provided so as to be lifted and lowered.
    • 为了防止通过减少接触气体区域而产生颗粒,并通过降低流通能力来提高吹扫效率。 提供了一种基板处理装置,包括:处理基板2的处理室1; 设置在处理室1的侧壁上的用于将基板2输入/移出处理室1的基板输送口10; 设置成在处理室1中升降的保持件,用于保持基板2; 供应口3和4设置在保持器上方,用于将气体供应到处理室1中; 设置在保持器的周边部分上的用于排出供给到处理室1中的气体的排气管道35; 以及在处理基板时设置在排气管道35的上表面下方的排气口5,用于将排气管道35排出的气体排出到处理室1外部,其中构成排气管道35的构件的至少一部分 被提供以被提升和降低。