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1. 发明申请

US20080264337A1 Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20080264337A1
公开(公告)日：2008-10-30
申请号：US12076508
申请日：2008-03-19
申请人： Atsushi Sano , Hideharu Itatani , Mitsuro Tanabe
发明人： Atsushi Sano , Hideharu Itatani , Mitsuro Tanabe
IPC分类号： C23C16/52 , C23C14/34 , H01L21/00
CPC分类号： C23C16/4408 , Y10T29/41
摘要： A substrate processing apparatus and a method for manufacturing a semiconductor device whereby foreign matter can be prevented from being adsorbed on the substrate, by suppressing agitation of foreign matter present in the processing chamber. The substrate processing apparatus comprises a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.
摘要翻译：一种基板处理装置和半导体装置的制造方法，通过抑制处理室中存在的异物的搅动，能够防止异物吸附在基板上。基板处理装置包括用于处理基板的处理室; 处理气体供给管线，用于将处理气体供给到处理室中; 用于将惰性气体供给到处理室中的惰性气体供给管线; 设置在惰性气体供给管线中的惰性气体排出管线，用于排出供入惰性气体供给管线的惰性气体，而不将惰性气体供给到处理室中; 设置在所述惰性气体供给管线中的第一阀，在所述惰性气体供给管路中设置有所述惰性气体排出管线的部分的下游侧; 设置在惰性气体排放管线中的第二阀; 以及排出处理室内部的排气管。

2. 发明授权

US08367566B2 Method for manufacturing semiconductor device and method for processing substrate 有权
标题翻译：用于制造半导体器件的方法和用于处理衬底的方法
公开(公告)号：US08367566B2
公开(公告)日：2013-02-05
申请号：US13547935
申请日：2012-07-12
申请人： Atsushi Sano , Hideharu Itatani , Mitsuro Tanabe
发明人： Atsushi Sano , Hideharu Itatani , Mitsuro Tanabe
IPC分类号： H01L21/20 , H01L21/36 , C23C16/455 , C23C16/52 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4408 , Y10T29/41
摘要： A substrate processing apparatus having a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.
摘要翻译：一种具有处理基板的处理室的基板处理装置; 处理气体供给管线，用于将处理气体供给到处理室中; 用于将惰性气体供给到处理室中的惰性气体供给管线; 设置在惰性气体供给管线中的惰性气体排出管线，用于排出供入惰性气体供给管线的惰性气体，而不将惰性气体供给到处理室中; 设置在所述惰性气体供给管线中的第一阀，在所述惰性气体供给管路中设置有所述惰性气体排出管线的部分的下游侧; 设置在惰性气体排放管线中的第二阀; 以及排出处理室内部的排气管。

3. 发明授权

US08235001B2 Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08235001B2
公开(公告)日：2012-08-07
申请号：US12076508
申请日：2008-03-19
申请人： Atsushi Sano , Hideharu Itatani , Mitsuro Tanabe
发明人： Atsushi Sano , Hideharu Itatani , Mitsuro Tanabe
IPC分类号： C23C16/455 , C23C16/52 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4408 , Y10T29/41
摘要： A substrate processing apparatus and a method for manufacturing a semiconductor device whereby foreign matter can be prevented from being adsorbed on the substrate, by suppressing agitation of foreign matter present in the processing chamber. The substrate processing apparatus comprises a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.
摘要翻译：一种基板处理装置和半导体装置的制造方法，通过抑制处理室中存在的异物的搅动，能够防止异物吸附在基板上。基板处理装置包括用于处理基板的处理室; 处理气体供给管线，用于将处理气体供给到处理室中; 用于将惰性气体供给到处理室中的惰性气体供给管线; 设置在惰性气体供给管线中的惰性气体排出管线，用于排出供入惰性气体供给管线的惰性气体，而不将惰性气体供给到处理室中; 设置在所述惰性气体供给管线中的第一阀，在所述惰性气体供给管路中设置有所述惰性气体排出管线的部分的下游侧; 设置在惰性气体排放管线中的第二阀; 以及排出处理室内部的排气管。

4. 发明申请

US20070264840A1 Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device 有权
标题翻译：基板处理装置及制造半导体装置的方法
公开(公告)号：US20070264840A1
公开(公告)日：2007-11-15
申请号：US11663179
申请日：2005-10-14
申请人： Hideharu Itatani , Hidehiro Yanai , Sadayoshi Horii , Atsushi Sano
发明人： Hideharu Itatani , Hidehiro Yanai , Sadayoshi Horii , Atsushi Sano
IPC分类号： H01L21/00 , B05C13/00
CPC分类号： C23C16/4412
摘要： To prevent particles from generating by reducing a contact-gas area and improve a purge efficiency by reducing a flow passage capacity. There is provided a substrate processing apparatus, comprising a processing chamber 1 for processing a substrate 2; a substrate carrying port 10 provided on a sidewall of the processing chamber 1, for carrying-in/carrying-out the substrate 2 to/from the processing chamber 1; a holder provided so as to be lifted and lowered in the processing chamber 1, for holding the substrate 2; supply ports 3 and 4 provided above the holder, for supplying gas into the processing chamber 1; an exhaust duct 35 provided on the peripheral part of the holder, for exhausting the gas supplied into the processing chamber 1; and an exhaust port 5 provided below an upper surface of the exhaust duct 35 when the substrate is processed, for exhausting the gas discharged by the exhaust duct 35 outside the processing chamber 1, wherein at least a part of a member constituting the exhaust duct 35 is provided so as to be lifted and lowered.
摘要翻译：为了防止通过减少接触气体区域而产生颗粒，并通过降低流通能力来提高吹扫效率。提供了一种基板处理装置，包括：处理基板2的处理室1; 设置在处理室1的侧壁上的用于将基板2输入/移出处理室1的基板输送口10; 设置成在处理室1中升降的保持件，用于保持基板2; 供应口3和4设置在保持器上方，用于将气体供应到处理室1中; 设置在保持器的周边部分上的用于排出供给到处理室1中的气体的排气管道35; 以及在处理基板时设置在排气管道35的上表面下方的排气口5，用于将排气管道35排出的气体排出到处理室1外部，其中构成排气管道35的构件的至少一部分被提供以被提升和降低。

5. 发明授权

US07524766B2 Method for manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：半导体装置及基板处理装置的制造方法
公开(公告)号：US07524766B2
公开(公告)日：2009-04-28
申请号：US10521248
申请日：2003-07-15
申请人： Hideharu Itatani , Sadayoshi Horii , Masayuki Asai , Atsushi Sano
发明人： Hideharu Itatani , Sadayoshi Horii , Masayuki Asai , Atsushi Sano
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C23C16/45542 , C23C16/0272 , H01L28/55 , H01L28/60 , H01L28/90
摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.
摘要翻译：以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。通过初始成膜步骤的一个步骤可以获得所需的厚度。然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体不使用热CVD法等离子体激发。

6. 发明申请

US20080032514A1 Method For Manufacturing Semiconductor Device, And Substrate Processing Apparatus 有权
标题翻译：半导体器件制造方法及基板处理装置
公开(公告)号：US20080032514A1
公开(公告)日：2008-02-07
申请号：US11791222
申请日：2005-11-29
申请人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Katsuhiko Yamamoto
发明人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Katsuhiko Yamamoto
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： H01L21/02148 , C23C16/401 , C23C16/45523 , H01L21/0228 , H01L21/31604
摘要： The ability to control a concentration ratio of a metal and silicon in a metal silicate film is improved, allowing a high-quality semiconductor device to be manufactured. A step is provided for supplying a first raw material, which contains a metal atom, and a second raw material, which contains a silicon atom and a nitrogen atom, into a processing chamber (4); and forming on a substrate (30) a metal silicate film containing the metal atom and silicon atom. A raw material supply ratio of the first and second raw materials is controlled in the step of forming a metal silicate film, thereby controlling a concentration ratio of the metal and silicon in the resulting metal silicate film.
摘要翻译：提高了控制金属硅酸盐膜中的金属和硅的浓度比的能力，能够制造高品质的半导体装置。提供了将含有金属原子的第一原料和含有硅原子和氮原子的第二原料供给到处理室（4）中的步骤; 以及在基板（30）上形成含有所述金属原子和硅原子的金属硅酸盐膜。在形成金属硅酸盐膜的步骤中控制第一和第二原料的原料供给比，从而控制所得金属硅酸盐膜中的金属和硅的浓度比。

7. 发明申请

US20070042581A1 Manufacturing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：US20070042581A1
公开(公告)日：2007-02-22
申请号：US10574571
申请日：2005-01-21
申请人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Masayuki Asai
发明人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Masayuki Asai
IPC分类号： H01L21/24
CPC分类号： H01L21/02148 , C23C16/34 , C23C16/45529 , C23C16/45531 , H01L21/02271 , H01L21/02337 , H01L21/31645 , H01L21/3185
摘要： To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device. The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.
摘要翻译：提供能够容易地控制含有金属原子和硅原子的膜的氮浓度分布的半导体装置的制造方法和基板处理装置，以及制造高品质的半导体装置。该方法包括在反应室4中在基板30上形成含有金属原子和硅原子的膜，并对膜进行氮化处理的步骤，其中通过将硅浓度至少改变为二形成薄膜步骤的阶段。

8. 发明申请

US20050250341A1 Method for manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：半导体装置及基板处理装置的制造方法
公开(公告)号：US20050250341A1
公开(公告)日：2005-11-10
申请号：US10521248
申请日：2003-07-15
申请人： Hideharu Itatani , Sadayoshi Horii , Masayuki Asai , Atsushi Sano
发明人： Hideharu Itatani , Sadayoshi Horii , Masayuki Asai , Atsushi Sano
IPC分类号： C23C16/44 , C23C16/455 , H01L21/02 , H01L21/31 , H01L21/469
CPC分类号： C23C16/45542 , C23C16/0272 , H01L28/55 , H01L28/60 , H01L28/90
摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.
摘要翻译：以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。通过初始成膜步骤的一个步骤可以获得所需的厚度。然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体不使用热CVD法等离子体激发。

9. 发明授权

US07723245B2 Method for manufacturing semiconductor device, and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法以及基板处理装置
公开(公告)号：US07723245B2
公开(公告)日：2010-05-25
申请号：US11791222
申请日：2005-11-29
申请人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Katsuhiko Yamamoto
发明人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Katsuhiko Yamamoto
IPC分类号： H01L21/31
CPC分类号： H01L21/02148 , C23C16/401 , C23C16/45523 , H01L21/0228 , H01L21/31604
摘要： The ability to control a concentration ratio of a metal and silicon in a metal silicate film is improved, allowing a high-quality semiconductor device to be manufactured.A step is provided for supplying a first raw material, which contains a metal atom, and a second raw material, which contains a silicon atom and a nitrogen atom, into a processing chamber (4); and forming on a substrate (30) a metal silicate film containing the metal atom and silicon atom. A raw material supply ratio of the first and second raw materials is controlled in the step of forming a metal silicate film, thereby controlling a concentration ratio of the metal and silicon in the resulting metal silicate film.
摘要翻译：提高了控制金属硅酸盐膜中的金属和硅的浓度比的能力，能够制造高品质的半导体装置。提供了将含有金属原子的第一原料和含有硅原子和氮原子的第二原料供给到处理室（4）中的步骤; 以及在基板（30）上形成含有所述金属原子和硅原子的金属硅酸盐膜。在形成金属硅酸盐膜的步骤中控制第一和第二原料的原料供给比，从而控制所得金属硅酸盐膜中的金属和硅的浓度比。

10. 发明授权

US07531467B2 Manufacturing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：US07531467B2
公开(公告)日：2009-05-12
申请号：US10574571
申请日：2005-01-21
申请人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Masayuki Asai
发明人： Atsushi Sano , Sadayoshi Horii , Hideharu Itatani , Masayuki Asai
IPC分类号： H01L21/31
CPC分类号： H01L21/02148 , C23C16/34 , C23C16/45529 , C23C16/45531 , H01L21/02271 , H01L21/02337 , H01L21/31645 , H01L21/3185
摘要： To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device.The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.
摘要翻译：提供能够容易地控制含有金属原子和硅原子的膜的氮浓度分布的半导体装置的制造方法和基板处理装置，以及制造高品质的半导体装置。该方法包括在反应室4中在基板30上形成含有金属原子和硅原子的膜，并对膜进行氮化处理的步骤，其中通过将硅浓度至少改变为二形成薄膜步骤的阶段。

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