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21. 发明授权

US08138064B2 Method for producing silicon film-transferred insulator wafer 有权
标题翻译：生产硅膜转移绝缘体晶圆的方法
公开(公告)号：US08138064B2
公开(公告)日：2012-03-20
申请号：US12922569
申请日：2009-10-29
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
IPC分类号： H01L21/304
CPC分类号： H01L21/76254 , H01L21/76256
摘要： A method for producing a silicon film-transferred insulator wafer is disclosed. The method includes a surface activation step of performing a surface activation treatment on at least one of a surface of an insulator wafer and a hydrogen ion-implanted surface of a single crystal silicon wafer into which a hydrogen ion has been implanted to form a hydrogen ion-implanted layer; a bonding step that bonds the hydrogen ion-implanted surface to the surface of the insulator wafer to obtain bonded wafers; a first heating step that heats the bonded wafers; a grinding and/or etching step of grinding and/or etching a surface of a single crystal silicon wafer side of the bonded wafers; a second heating step that heats the bonded wafers; and a detachment step to detach the hydrogen ion-implanted layer by applying a mechanical impact to the hydrogen ion-implanted layer of the bonded wafers thus heated at the second temperature.
摘要翻译：公开了一种用于制造硅膜转移绝缘体晶片的方法。该方法包括对绝缘体晶片的表面和注入氢离子形成氢离子的单晶硅晶片的氢离子注入表面中的至少一个进行表面活化处理的表面活化步骤植皮层键合步骤，将氢离子注入表面结合到绝缘体晶片的表面以获得接合的晶片; 加热接合晶片的第一加热步骤; 研磨和/或蚀刻步骤，研磨和/或蚀刻接合晶片的单晶硅晶片侧的表面; 第二加热步骤，加热粘合的晶片; 以及通过对在第二温度下加热的接合晶片的氢离子注入层施加机械冲击来分离氢离子注入层的分离步骤。

22. 发明授权

US08129612B2 Method for manufacturing single-crystal silicon solar cell and single-crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08129612B2
公开(公告)日：2012-03-06
申请号：US12076916
申请日：2008-03-25
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/04 , H01L31/028
CPC分类号： H01L31/1804 , H01L31/056 , H01L31/068 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： There is disclosed a method for manufacturing a single-crystal silicon solar cell including the steps of: implanting a hydrogen ion or a rare gas ion into a single-crystal silicon substrate; forming a transparent insulator layer on a metal substrate; performing a surface activation treatment with respect to at least one of the ion implanted surface and a surface of the transparent insulator layer; bonding these surfaces; mechanically delaminating the single-crystal silicon substrate to provide a single-crystal silicon layer; forming a plurality of second conductivity type diffusion regions in the delaminated surface side of the single-crystal silicon layer so that a plurality of first conductivity type regions and the plurality of second conductivity regions are present in the delaminated surface of the single-crystal silicon layer; respectively forming a plurality of individual electrodes on the plurality of first and second conductivity type regions of the single-crystal silicon layer; forming respective collecting electrodes; and forming a transparent protective film.
摘要翻译：公开了一种制造单晶硅太阳能电池的方法，包括以下步骤：将氢离子或稀有气体离子注入到单晶硅衬底中; 在金属基板上形成透明绝缘体层; 对所述离子注入表面和所述透明绝缘体层的表面中的至少一个进行表面活化处理; 粘合这些表面; 机械分层单晶硅衬底以提供单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电型扩散区，使得多个第一导电型区和多个第二导电区存在于单晶硅层的分层表面 ; 分别在单晶硅层的多个第一和第二导电类型区域上形成多个单独电极; 形成各个集电极; 并形成透明保护膜。

23. 发明申请

US20110290321A1 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 审中-公开
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US20110290321A1
公开(公告)日：2011-12-01
申请号：US13137281
申请日：2011-08-03
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/0224 , H01L31/028 , H01L31/18
CPC分类号： H01L31/068 , H01L31/022466 , H01L31/1884 , H01L31/1896 , Y02B10/10 , Y02E10/547
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer.
摘要翻译：一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将离子注入单晶硅衬底; 通过透明导电粘合剂将单晶硅衬底和透明绝缘体衬底彼此紧密接触，同时使用离子注入表面作为结合表面; 将透明导电粘合剂固化并熟化成透明导电膜; 对离子注入层施加冲击以机械地分层单晶硅衬底以留下单晶硅层; 并在单晶硅层中形成p-n结。

24. 发明申请

US20110014776A1 METHOD FOR PRODUCING SOI SUBSTRATE 有权
标题翻译：生产SOI衬底的方法
公开(公告)号：US20110014776A1
公开(公告)日：2011-01-20
申请号：US12933113
申请日：2009-04-01
申请人： Shoji Akiyama , Makoto Kawai , Atsuo Ito , Yoshihiro Kubota , Kouichi Tanaka , Yuji Tobisaka , Hiroshi Tamura
发明人： Shoji Akiyama , Makoto Kawai , Atsuo Ito , Yoshihiro Kubota , Kouichi Tanaka , Yuji Tobisaka , Hiroshi Tamura
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L27/12
摘要： A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate.
摘要翻译：一种容易制造透明SOI衬底的方法，其具有：形成有硅膜的主表面; 以及位于与形成硅膜的一侧相反一侧的粗糙主表面。制造透明SOI衬底的方法，其中在透明绝缘衬底的第一主表面上形成硅膜，同时透明绝缘衬底的与第一主表面相反的第二主表面被粗糙化。该方法至少包括以下步骤：使RMS表面粗糙度低于0.7nm的第一主表面粗糙化，并且第二主表面的RMS表面粗糙度高于第一主表面的表面粗糙度，以制备透明绝缘基板; 以及在所述透明绝缘基板的所述第一主表面上形成所述硅膜。

25. 发明申请

US20110014775A1 METHOD FOR PRODUCING SILICON FILM TRANSFERRED INSULATOR WAFTER 有权
标题翻译：生产硅膜转移绝缘子波导的方法
公开(公告)号：US20110014775A1
公开(公告)日：2011-01-20
申请号：US12922569
申请日：2009-10-29
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
IPC分类号： H01L21/304
CPC分类号： H01L21/76254 , H01L21/76256
摘要： [PROBLEM] Provided is a method for producing an SOI wafer which the method can prevent occurrence of thermal strain, detachment, crack and the like attributed to a difference in thermal expansion coefficients between the insulating substrate and the SOI layer and also improve the uniformity of film thickness of the SOI layer.[MEANS FOR SOLVING THE PROBLEM] Provided is a method for producing an SOI wafer comprising steps of: performing a surface activation treatment on at least one of a surface of an insulator wafer and a hydrogen ion-implanted surface of a single crystal silicon wafer having a hydrogen ion-implanted layer; bonding the hydrogen ion-implanted surface to the surface of the insulator wafer to obtain bonded wafers; heating the bonded wafers at a first temperature; grinding and/or etching a surface of a single crystal silicon wafer side of the bonded wafers thus heated so as to thin the single crystal silicon wafer of the bonded wafers; heating the bonded wafers thus ground and/or etched at a second temperature which is higher the first temperature; and performing detachment at the hydrogen ion-implanted layer by applying a mechanical impact to the hydrogen ion-implanted layer of the bonded wafers thus heated at the second temperature.
摘要翻译： [问题]提供一种用于制造SOI晶片的方法，该方法可以防止由于绝缘基板和SOI层之间的热膨胀系数的差异而引起的热应变，剥离，裂纹等的发生，并且还提高了 SOI层的膜厚度。解决问题的手段提供一种SOI晶片的制造方法，包括以下步骤：对绝缘体晶片的表面和具有单晶硅晶片的氢离子注入表面中的至少一个进行表面活化处理，所述单晶硅晶片具有氢离子注入层; 将氢离子注入表面接合到绝缘体晶片的表面以获得接合晶片; 在第一温度下加热接合的晶片; 研磨和/或蚀刻如此加热的接合晶片的单晶硅晶片侧的表面，以使结合晶片的单晶硅晶片变薄; 加热接合的晶片，从而在第一温度较高的第二温度下进行研磨和/或蚀刻; 并且通过对在第二温度下加热的接合晶片的氢离子注入层施加机械冲击，在氢离子注入层处进行脱离。

26. 发明申请

US20110003460A1 METHOD FOR TREATING SURFACE OF SOI SUBSTRATE 审中-公开
标题翻译： SOI衬底表面处理方法
公开(公告)号：US20110003460A1
公开(公告)日：2011-01-06
申请号：US12864582
申请日：2009-02-12
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuji Tobisaka , Hiroshi Tamura
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuji Tobisaka , Hiroshi Tamura
IPC分类号： H01L21/02
CPC分类号： H01L29/78603 , H01L21/3065 , H01L21/3247 , H01L21/76254
摘要： A method for minimizing thickness variation of a substrate in an anneal step and achieving the smoothing of the surface of the substrate. Specifically provided is a method for treating the surface of a SOI substrate, including the steps of treating the surface of the SOI substrate by the PACE method using a plasma or the GCIB method using a gas cluster ion beam and subjecting the treated substrate to a heat treatment in argon atmosphere or an inert gas atmosphere containing 4 vol % or less of hydrogen so that the treated SOI substrate can be annealed.
摘要翻译：一种在退火步骤中最小化衬底的厚度变化并实现衬底表面的平滑化的方法。具体提供的是用于处理SOI衬底的表面的方法，包括以下步骤：使用等离子体的PACE法或使用气体簇离子束的GCIB方法处理SOI衬底的表面，并使经处理的衬底经受热在氩气氛中或含有4体积％以下的氢气的惰性气体气氛中进行处理，以使被处理的SOI衬底能够退火。

27. 发明授权

US07833878B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07833878B2
公开(公告)日：2010-11-16
申请号：US12162134
申请日：2007-02-08
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A hydrogen ion-implanted layer is formed on the surface side of a first substrate which is a single-crystal silicon substrate. At least one of the surface of a second substrate, which is a transparent insulating substrate, and the surface of the first substrate is subjected to surface activation treatment, and the two substrates are bonded together. The bonded substrate composed of the single-crystal Si substrate and the transparent insulating substrate thus obtained is mounted on a susceptor and is placed under an infrared lamp. Light having a wave number range including an Si—H bond absorption band is irradiated at the bonded substrate for a predetermined length of time to break the Si—H bonds localized within a “microbubble layer” in the hydrogen ion-implanted layer, thereby separating a silicon thin film layer.
摘要翻译：在作为单晶硅衬底的第一衬底的表面侧上形成氢离子注入层。作为透明绝缘基板的第二基板的表面和第一基板的表面中的至少一个进行表面活化处理，并且将两个基板接合在一起。将由单晶Si衬底和由此获得的透明绝缘衬底构成的键合衬底安装在基座上并放置在红外灯下。在键合衬底上照射具有Si-H键吸收带的波数范围的光，以预定的时间长度，以破坏位于氢离子注入层中的“微泡层”内的Si-H键，从而分离硅薄膜层。

28. 发明申请

US20100233866A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：制造半导体基板的方法
公开(公告)号：US20100233866A1
公开(公告)日：2010-09-16
申请号：US12161821
申请日：2007-02-08
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/46 , H01L21/44
CPC分类号： H01L21/76254 , C30B33/04 , H01L21/265
摘要： A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based semiconductor crystal along the hydrogen ion-implanted layer, thereby transferring (peeling off) the surface layer part of the low-dislocation density region onto the second substrate. At this time, the lower layer part of the low-dislocation density region stays on the first substrate without being transferred onto the second substrate. The second substrate onto which the surface layer part of the low-dislocation density region has been transferred is defined as a semiconductor substrate available by the manufacturing method of the present invention, and the first substrate on which the lower layer part of the low-dislocation density region stays is reused as a substrate for epitaxial growth.
摘要翻译：氮化物类半导体晶体和第二基板结合在一起。在这种状态下，外部施加冲击以沿着氢离子注入层分离氮化物基半导体晶体的低位错密度区域，从而将低位错密度区域的表面层部分转移（剥离）到第二基板。此时，低位错密度区域的下层部分停留在第一基板上，而不会转移到第二基板上。将低位错密度区域的表面层部分转印到其上的第二基板被定义为可通过本发明的制造方法获得的半导体基板，并且第一基板在其上具有低位错层的下层部分密度区域残留被重新用作外延生长的衬底。

29. 发明申请

US20090246935A1 Method for producing soi substrate 有权
标题翻译：生产基材的方法
公开(公告)号：US20090246935A1
公开(公告)日：2009-10-01
申请号：US12383834
申请日：2009-03-27
申请人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Yuji Tobisaka , Shoji Akiyama , Hiroshi Tamura
发明人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Yuji Tobisaka , Shoji Akiyama , Hiroshi Tamura
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , Y10S438/964 , Y10S438/967
摘要： Provided is a method for producing an SOI substrate comprising a transparent insulating substrate and a silicon film formed on a first major surface of the insulating substrate wherein a second major surface of the insulating substrate which is opposite to the major surface is roughened, the method suppressing the generation of metal impurities and particles in a simple and easy way. More specifically, provided is a method for producing an SOI substrate comprising a transparent insulating substrate, a silicon film formed on a first major surface of the transparent insulating substrate, and a roughened second major surface, which is opposite to the first major surface, the method comprising steps of: providing the transparent insulating substrate, mirror surface-processing at least the first major surface of the transparent insulating substrate, forming a silicon film on the first major surface of the transparent insulating substrate, and laser-processing the second major surface of the transparent insulating substrate so as to roughen the second major surface by using a laser.
摘要翻译：提供一种制造SOI基板的方法，该SOI基板包括透明绝缘基板和形成在绝缘基板的第一主表面上的硅膜，其中绝缘基板的与主表面相对的第二主表面被粗糙化，该方法抑制以简单方便的方式生成金属杂质和颗粒。更具体地说，提供一种SOI基板的制造方法，其包括透明绝缘基板，形成在透明绝缘基板的第一主表面上的硅膜和与第一主表面相对的粗糙化的第二主表面，方法包括以下步骤：提供透明绝缘基板，至少透明绝缘基板的第一主表面进行镜面处理，在透明绝缘基板的第一主表面上形成硅膜，并且对第二主表面进行激光加工的透明绝缘基板，以便通过使用激光使第二主表面粗糙化。

30. 发明申请

US20090057791A1 MICROCHIP AND SOI SUBSTRATE FOR MANUFACTURING MICROCHIP 审中-公开
标题翻译：用于制造MICROCHIP的微型芯片和SOI基板
公开(公告)号：US20090057791A1
公开(公告)日：2009-03-05
申请号：US12281886
申请日：2007-03-12
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/762 , H01L29/66 , H01L29/02
CPC分类号： H01L21/76254 , H01L21/84
摘要： A plasma treatment or an ozone treatment is applied to the respective bonding surfaces of the single-crystal Si substrate in which the ion-implanted layer has been formed and the quartz substrate, and the substrates are bonded together. Then, a force of impact is applied to the bonded substrate to peel off a silicon thin film from the bulk portion of single-crystal silicon along the hydrogen ion-implanted layer, thereby obtaining an SOI substrate having an SOI layer on the quartz substrate. A concave portion, such as a hole or a micro-flow passage, is formed on a surface of the quartz substrate of the SOI substrate thus obtained, so that processes required for a DNA chip or a microfluidic chip are applied. A silicon semiconductor element for the analysis/evaluation of a sample attached/held to this concave portion is formed in the SOI layer.
摘要翻译：对已经形成有离子注入层的单晶Si衬底和石英衬底的各个接合表面施加等离子体处理或臭氧处理，并将衬底接合在一起。然后，对键合衬底施加冲击力，沿着氢离子注入层从单晶硅的主体部分剥离硅薄膜，从而获得在石英衬底上具有SOI层的SOI衬底。在如此获得的SOI衬底的石英衬底的表面上形成诸如孔或微流通道的凹部，从而应用DNA芯片或微流体芯片所需的工艺。在SOI层中形成用于分析/评价附着/保持在该凹部的样品的硅半导体元件。

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