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21. 发明申请

US20080203055A1 Method of forming one or more nanopores for aligning molecules for molecular electronics 失效
标题翻译：形成一个或多个用于分子电子学分子的纳米孔的形成方法
公开(公告)号：US20080203055A1
公开(公告)日：2008-08-28
申请号：US11906819
申请日：2007-10-03
申请人： Theodore I. Kamins , Yong Chen , Patricia A. Beck
发明人： Theodore I. Kamins , Yong Chen , Patricia A. Beck
IPC分类号： B31D3/00
CPC分类号： B82Y10/00 , B81C1/00031 , C03C15/00 , C03C17/001 , H01L21/0332 , H01L21/0337 , H01L21/31144
摘要： A technique is provided for forming a molecule or an array of molecules having a defined orientation relative to the substrate or for forming a mold for deposition of a material therein. The array of molecules is formed by dispersing them in an array of small, aligned holes (nanopores), or mold, in a substrate. Typically, the material in which the nanopores are formed is insulating. The underlying substrate may be either conducting or insulating. For electronic device applications, the substrate is, in general, electrically conducting and may be exposed at the bottom of the pores so that one end of the molecule in the nanopore makes electrical contact to the substrate. A substrate such as a single-crystal silicon wafer is especially convenient because many of the process steps to form the molecular array can use techniques well developed for semiconductor device and integrated-circuit fabrication.
摘要翻译：提供了一种用于形成具有相对于基底具有限定取向的分子或分子阵列的技术，或用于形成用于在其中沉积材料的模具。分子阵列通过将它们分散在基底中的小的，对准的孔（纳米孔）或模具的阵列中而形成。通常，形成纳米孔的材料是绝缘的。底层衬底可以是导电的或绝缘的。对于电子器件应用，基底通常是导电的并且可以在孔的底部暴露，使得纳米孔中的分子的一端与基底电接触。诸如单晶硅晶片的衬底是特别方便的，因为形成分子阵列的许多工艺步骤可以使用用于半导体器件和集成电路制造的技术。

22. 发明授权

US08569900B2 Nanowire sensor with angled segments that are differently functionalized 有权
标题翻译：具有不同功能化角度段的纳米线传感器
公开(公告)号：US08569900B2
公开(公告)日：2013-10-29
申请号：US13383183
申请日：2009-07-20
申请人： Nathaniel J. Quitoriano , Theodore I. Kamins , Hans S. Cho
发明人： Nathaniel J. Quitoriano , Theodore I. Kamins , Hans S. Cho
IPC分类号： H01L23/58
CPC分类号： B81B1/00 , B81B2201/0214
摘要： A nanowire device includes a nanowire having differently functionalized segments. Each of the segments is configured to interact with a species to modulate the conductance of a segment. The nanowire is grown from a single catalyst and the segments include a first segment at a non-linear angle from a second segment.
摘要翻译：纳米线器件包括具有不同功能化片段的纳米线。每个片段被配置为与物种相互作用以调节片段的电导。纳米线从单个催化剂生长，并且所述段包括与第二段非线性角度的第一段。

23. 发明授权

US08223331B2 Signal-amplification device for surface enhanced raman spectroscopy 失效
标题翻译：用于表面增强拉曼光谱的信号放大装置
公开(公告)号：US08223331B2
公开(公告)日：2012-07-17
申请号：US12487940
申请日：2009-06-19
申请人： Alexandre M. Bratkovski , Theodore I. Kamins
发明人： Alexandre M. Bratkovski , Theodore I. Kamins
IPC分类号： G01J3/44
CPC分类号： G01N21/658
摘要： A signal-amplification device for surface enhanced Raman spectroscopy (SERS). The signal-amplification device includes a non-SERS-active (NSA) substrate, a plurality of multi-tiered non-SERS-active nanowire (MNSANW) structures and a plurality of metallic SERS-active nanoparticles. In addition, a MNSANW structure of the plurality of MNSANW structures includes a main arm of a plurality of main arms and a plurality of arms of at least secondary order. The plurality of main arms is disposed on the NSA substrate; and, a secondary arm of the plurality of arms is disposed on the main arm. Moreover, a metallic SERS-active nanoparticle of the plurality of metallic SERS-active nanoparticles is disposed on a surface of the MNSANW structure.
摘要翻译：用于表面增强拉曼光谱（SERS）的信号放大装置。信号放大装置包括非SERS活性（NSA）衬底，多个多层非SERS活性纳米线（MNSANW）结构和多个金属SERS活性纳米颗粒。此外，多个MNSANW结构的MNSANW结构包括多个主臂的主臂和至少二次的多个臂。多个主臂设置在NSA基板上; 并且所述多个臂的次臂设置在所述主臂上。此外，多个金属SERS活性纳米颗粒的金属SERS活性纳米颗粒设置在MNSANW结构的表面上。

24. 发明申请

US20120145988A1 Nanoscale Apparatus and Sensor With Nanoshell and Method of Making Same 审中-公开
标题翻译：纳米尺度仪器和传感器及其制作方法
公开(公告)号：US20120145988A1
公开(公告)日：2012-06-14
申请号：US13146880
申请日：2009-01-29
申请人： Nathaniel J. Quitoriano , Theodore I. Kamins
发明人： Nathaniel J. Quitoriano , Theodore I. Kamins
IPC分类号： H01L29/06 , H01L21/20 , B82Y99/00 , B82Y40/00
CPC分类号： B81C1/0015 , B81B2203/0118 , B81B2203/0361
摘要： A nanoscale apparatus (100) includes a nanoshell (110) extending from a substrate (102) and an epitaxial connection (120) between the substrate and an end (112) of the nanoshell adjacent to the substrate. A nanoscale sensor (200) includes surfaces (204, 206) extending relatively perpendicular to each other, a nanoshell (210) extending from one of the surfaces, and a detector (220) that monitors motion of the nanoshell relative to another of the surfaces spaced from the nanoshell by a gap (208). A method (300) of making a nanoscale apparatus includes growing (310) a nanowire on a surface; forming (320) a core-shell composite nanostructure; exposing (330) an end of the nanowire opposite to the surface with a FIB; and removing (340) the nanowire core from the exposed end, such that a nanoshell having a hollow region is attached to the surface. A material of the nanoshell (110, 210) excludes sp2-bonded carbon materials.
摘要翻译：纳米尺度装置（100）包括从衬底（102）延伸的纳米壳（110）和衬底之间的外延连接（120）和与衬底相邻的纳米壳的端部（112）。纳米尺度传感器（200）包括彼此相对垂直延伸的表面（204,206），从其中一个表面延伸的纳米壳（210）以及监测纳米壳相对于另一表面的运动的检测器（220）与纳米壳间隔开间隙（208）。制造纳米级装置的方法（300）包括在表面上生长（310）纳米线; 形成（320）核 - 壳复合纳米结构; 用FIB将（330）与该表面相对的纳米线的一端暴露（330）以及从所述暴露端去除（340）所述纳米线芯，使得具有中空区域的纳米壳附接到所述表面。纳米壳（110,210）的材料不包括sp2结合的碳材料。

25. 发明授权

US08198706B2 Multi-level nanowire structure and method of making the same 有权
标题翻译：多层纳米线结构及制作方法
公开(公告)号：US08198706B2
公开(公告)日：2012-06-12
申请号：US12243853
申请日：2008-10-01
申请人： Theodore I. Kamins , Nathaniel Quitoriano
发明人： Theodore I. Kamins , Nathaniel Quitoriano
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/0237 , H01L21/02433 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/02609 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L31/035281 , H01L31/03529 , Y02E10/50 , Y10S977/762 , Y10S977/778 , Y10S977/813
摘要： A method for making a multi-level nanowire structure includes establishing a first plurality of nanowires on a substrate surface, wherein at least some of the nanowires are i) aligned at a predetermined crystallographically defined angle with respect to the substrate surface, ii) aligned substantially perpendicular with respect to the substrate surface, or iii) combinations of i and ii. An insulating layer is established between the nanowires of the first plurality such that one of two opposed ends of at least some of the nanowires positioned i) at the predetermined crystallographically defined angle, ii) substantially perpendicular with respect to the substrate surface, or iii) combinations of i and ii is exposed. Regions are grown from each of the exposed ends, and such regions coalesce to form a substantially continuous layer on the insulating layer. A second plurality of nanowires is established on the substantially continuous layer.
摘要翻译：制造多层纳米线结构的方法包括在衬底表面上建立第一多个纳米线，其中至少一些纳米线是i）相对于衬底表面以预定的晶体学限定的角度排列，ii）基本上对准垂直于衬底表面，或iii）i和ii的组合。在第一多个纳米线之间建立绝缘层，使得至少一些纳米线的两个相对端中的一个位于i）处于预定的晶体学限定的角度，ii）相对于衬底表面基本垂直，或iii） i和ii的组合被暴露。区域从每个暴露端生长，并且这些区域聚结以在绝缘层上形成基本上连续的层。在基本连续的层上建立第二多个纳米线。

26. 发明授权

US08053982B2 Light-emitting diodes with carrier extraction electrodes 有权
标题翻译：具有载体提取电极的发光二极管
公开(公告)号：US08053982B2
公开(公告)日：2011-11-08
申请号：US12243117
申请日：2008-10-01
申请人： Alexandre Bratkovski , Shih-Yuan Wang , Michael Tan , Theodore I. Kamins
发明人： Alexandre Bratkovski , Shih-Yuan Wang , Michael Tan , Theodore I. Kamins
IPC分类号： H01J1/62 , H01L27/15
CPC分类号： H01L33/0037 , H01L33/20 , H01L33/385 , H05B33/0818 , H05B33/0821 , H05B37/0272
摘要： One embodiment of the present invention relates to a light-emitting diode having one or more light-emitting layers, a pair of electrodes disposed on the light-emitting diode so that an operating voltage can be applied to generate light from the one or more light-emitting layers, and at least one external electrode in electronic communication with the one or more light-emitting layers. Applying an appropriate voltage to the at least one external electrodes at about the time the operating voltage is terminated extracts excess electrons from the one or more light-emitting layers and reduces the duration of electron-hole recombination during the time period over which the operating voltage is turned off.
摘要翻译：本发明的一个实施例涉及具有一个或多个发光层的发光二极管，设置在发光二极管上的一对电极，使得可以施加工作电压以产生来自一个或多个光的光以及与所述一个或多个发光层电连通的至少一个外部电极。大约在工作电压终止时将适当的电压施加到至少一个外部电极，从一个或多个发光层提取出多余的电子，并减少在工作电压的时间段内的电子 - 空穴复合的持续时间已关闭

27. 发明授权

US07880318B1 Sensing system and method of making the same 失效
标题翻译：感应系统及其制作方法
公开(公告)号：US07880318B1
公开(公告)日：2011-02-01
申请号：US11741242
申请日：2007-04-27
申请人： Theodore I. Kamins , Zhiyong Li , Duncan R. Stewart
发明人： Theodore I. Kamins , Zhiyong Li , Duncan R. Stewart
IPC分类号： H01L23/58 , H01L29/221 , H01L33/00 , H01L21/00 , G01B5/28
CPC分类号： B82Y15/00 , B82Y30/00 , G01N27/12 , G01N27/414 , H01L29/0665 , H01L29/0676 , Y10S977/762 , Y10S977/773 , Y10S977/774 , Y10S977/775 , Y10S977/776 , Y10S977/777
摘要： A sensing system includes a nanowire, a passivation layer established on at least a portion of the nanowire, and a barrier layer established on the passivation layer.
摘要翻译：感测系统包括纳米线，在纳米线的至少一部分上建立的钝化层以及在钝化层上建立的阻挡层。

28. 发明申请

US20110012222A1 METHOD OF MAKING LIGHT TRAPPING CRYSTALLINE STRUCTURES 失效
标题翻译：制造轻质结晶结构的方法
公开(公告)号：US20110012222A1
公开(公告)日：2011-01-20
申请号：US12505377
申请日：2009-07-17
申请人： Hans S. Cho , Theodore I. Kamins
发明人： Hans S. Cho , Theodore I. Kamins
IPC分类号： H01L31/0352 , H01L21/268 , H01L31/0368 , H01L31/0376
CPC分类号： H01L21/268 , H01L31/02363 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/03046 , H01L31/0312 , H01L31/035281 , H01L31/03682 , H01L31/03685 , H01L31/07 , H01L31/072 , H01L31/075 , H01L31/1804 , H01L31/182 , H01L31/1872 , Y02E10/544 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method of making a crystalline semiconductor structure provides a photonic device by employing low thermal budget annealing process. The method includes annealing a non-single crystal semiconductor film formed on a substrate to form a polycrystalline layer that includes a transition region adjacent to a surface of the film and a relatively thicker columnar region between the transition region and the substrate. The transition region includes small grains with random grain boundaries. The columnar region includes relatively larger columnar grains with substantially parallel grain boundaries that are substantially perpendicular to the substrate. The method further includes etching the surface to expose the columnar region having an irregular serrated surface.
摘要翻译：制造晶体半导体结构的方法通过采用低热预算退火工艺提供光子器件。该方法包括退火形成在衬底上的非单晶半导体膜以形成多晶层，该多晶层包括与膜的表面相邻的过渡区域和过渡区域与衬底之间相对较厚的柱状区域。过渡区域包括具有随机晶界的小颗粒。柱状区域包括具有基本上垂直于衬底的基本上平行的晶界的相对较大的柱状晶粒。该方法还包括蚀刻表面以暴露具有不规则锯齿状表面的柱状区域。

29. 发明申请

US20100321684A1 SIGNAL-AMPLIFICATION DEVICE FOR SURFACE ENHANCED RAMAN SPECTROSCOPY 失效
标题翻译：用于表面增强拉曼光谱的信号放大器件
公开(公告)号：US20100321684A1
公开(公告)日：2010-12-23
申请号：US12487940
申请日：2009-06-19
申请人： Alexandre M. Bratkovski , Theodore I. Kamins
发明人： Alexandre M. Bratkovski , Theodore I. Kamins
IPC分类号： G01J3/44 , B05D5/06
CPC分类号： G01N21/658
摘要： A signal-amplification device for surface enhanced Raman spectroscopy (SERS). The signal-amplification device includes a non-SERS-active (NSA) substrate, a plurality of multi-tiered non-SERS-active nanowire (MNSANW) structures and a plurality of metallic SERS-active nanoparticles. In addition, a MNSANW structure of the plurality of MNSANW structures includes a main arm of a plurality of main arms and a plurality of arms of at least secondary order. The plurality of main arms is disposed on the NSA substrate; and, a secondary arm of the plurality of arms is disposed on the main arm. Moreover, a metallic SERS-active nanoparticle of the plurality of metallic SERS-active nanoparticles is disposed on a surface of the MNSANW structure.
摘要翻译：用于表面增强拉曼光谱（SERS）的信号放大装置。信号放大装置包括非SERS活性（NSA）衬底，多个多层非SERS活性纳米线（MNSANW）结构和多个金属SERS活性纳米颗粒。此外，多个MNSANW结构的MNSANW结构包括多个主臂的主臂和至少二次的多个臂。多个主臂设置在NSA基板上; 并且所述多个臂的次臂设置在所述主臂上。此外，多个金属SERS活性纳米颗粒的金属SERS活性纳米颗粒设置在MNSANW结构的表面上。

30. 发明授权

US07608854B2 Electronic device and method of making the same 失效
标题翻译：电子设备及其制作方法
公开(公告)号：US07608854B2
公开(公告)日：2009-10-27
申请号：US11668136
申请日：2007-01-29
申请人： Theodore I. Kamins
发明人： Theodore I. Kamins
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L51/0508 , B82Y10/00 , H01L21/02381 , H01L21/02433 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/02639 , H01L21/02653 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/73 , H01L29/80 , H01L51/0048 , Y10S438/962 , Y10S977/762
摘要： An electronic device includes a primary nanowire of a first conductivity type, and a secondary nanowire of a second conductivity type extending outwardly from the primary nanowire. A doped region of the second conductivity type extends from the secondary nanowire into at least a portion of the primary nanowire.
摘要翻译：电子器件包括第一导电类型的初级纳米线和从初级纳米线向外延伸的第二导电类型的次级纳米线。第二导电类型的掺杂区域从次级纳米线延伸到初级纳米线的至少一部分。

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