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21. 发明授权

US5543539A Silacyclohexane compound, a method of preparing it and a liquid crystal composition containing it 失效
标题翻译：硅环己烷化合物，其制备方法和含有它的液晶组合物
公开(公告)号：US5543539A
公开(公告)日：1996-08-06
申请号：US388308
申请日：1995-02-14
申请人： Takaaki Shimizu , Takeshi Kinsho , Tsutomu Ogihara , Tatsushi Kaneko , Ryuichi Saito , Hideshi Kurihara
发明人： Takaaki Shimizu , Takeshi Kinsho , Tsutomu Ogihara , Tatsushi Kaneko , Ryuichi Saito , Hideshi Kurihara
IPC分类号： C07F7/08 , C07F7/12 , C09K19/40
CPC分类号： C09K19/406 , C07F7/0818 , C07F7/0896 , C07F7/12
摘要： There is provided a silacyclohexane compound and method of making same. The silacyclohexane compound has the following formula (1): ##STR1## wherein R denotes a linear-chain alkyl group with a carbon number of 1-10, a mono- or di-fluoroalkyl group with a carbon number of 1-10, a branched-chain alkyl group with a carbon number of 3-8, an alkoxyalkyl group with a carbon number of 2-7, or an alkenyl group with a carbon number of 2-8, ##STR2## denotes a trans-1-sila-1,4-cyclohexylene or a trans-4-sila-1,4-cyclohexylene group having silicon at positions 1 or 4 with substitutional group(s) of H, F, C1 or CH.sub.3 ; n denotes 0 or 1; L.sub.1 and L.sub.2 independently denote H.F, C1, CN or CH.sub.3 ; L.sub.3 denotes F; m denotes O, 1 or 2; and X denotes H, CN, F, C1, CF.sub.3, CC1F.sub.2, CHFC1, OCC1F.sub.2, OCHFC1, OCHF.sub.2, OCF.sub.3, R or OR group.
摘要翻译：提供硅环己烷化合物及其制备方法。硅环己烷化合物具有下式（1）：其中R表示碳原子数为1〜10的直链烷基，碳数为1〜1的单 - 或二 - 氟代烷基， 10，碳数为3-8的支链烷基，碳数为2-7的烷氧基烷基或碳数为2-8的烯基，表示反式-1 -S1-1,4-亚环己基或具有位置1或4的具有H，F，C1或CH3取代基的硅的反式-4-硅烷-1,4-亚环己基; n表示0或1; L1和L2独立地表示H.F，C1，CN或CH3; L3表示F; m表示O，1或2; X表示H，CN，F，C1，CF3，CC1F2，CHFC1，OCC1F2，OCHFC1，OCHF2，OCF3，R或OR基。

22. 发明授权

US4956693A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4956693A
公开(公告)日：1990-09-11
申请号：US28140
申请日：1987-03-19
申请人： Yasuo Sawahata , Ryuichi Saito , Naohiro Momma
发明人： Yasuo Sawahata , Ryuichi Saito , Naohiro Momma
IPC分类号： H01L29/73 , H01L21/265 , H01L21/331 , H01L21/74 , H01L21/8234 , H01L27/06 , H01L29/10 , H01L29/167 , H01L29/78
CPC分类号： H01L21/26506 , H01L21/74 , H01L29/1079 , H01L29/167
摘要： Disclosed is a semiconductor device having a support region, an element-forming region (e.g., an epitaxial layer) and a buried layer between the support region and the element-forming region, with at least one of a MOS element and a bipolar element being formed in the element-forming region. The feature of the present invention resides in that atoms of at least one element selected from oxygen, nitrogen, carbon, argon, neon, krypton and helium is contained in a layer in at least one of the element-forming region and the buried layer, so as to suppress auto-doping of impurities from the buried layer into the element-forming region and suppress swelling of the buried layer.
摘要翻译：公开了一种在支撑区域和元件形成区域之间具有支撑区域，元件形成区域（例如，外延层）和掩埋层的半导体器件，其中MOS元件和双极元件中的至少一个为形成在元件形成区域中。本发明的特征在于，选自氧，氮，碳，氩，氖，氪和氦中的至少一种元素的原子包含在元素形成区域和掩埋层中的至少一个中的层中，从而抑制杂质从掩埋层自动掺杂到元件形成区域并抑制埋层的溶胀。

23. 发明授权

US4772927A Thin film FET doped with diffusion inhibitor 失效
标题翻译：掺杂有扩散抑制剂的薄膜FET
公开(公告)号：US4772927A
公开(公告)日：1988-09-20
申请号：US922347
申请日：1986-10-23
申请人： Ryuichi Saito , Naohiro Momma
发明人： Ryuichi Saito , Naohiro Momma
IPC分类号： H01L21/3215 , H01L21/336 , H01L27/092 , H01L27/11 , H01L29/04 , H01L29/167 , H01L29/786 , H01L29/78
CPC分类号： H01L29/66757 , H01L21/32155 , H01L27/0922 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L29/04 , H01L29/167 , H01L29/78618 , H01L29/78675 , H01L29/78684
摘要： The present invention relates to a semiconductor device including a MOS transistor which is formed with a source region, a drain region and a channel region by the use of polycrystalline silicon, and a method of manufacturing the semiconductor device. Ions of carbon, oxygen or/and nitrogen are introduced into a polycrystalline silicon layer over the whole area thereof, and restrain conductive ions in the source and drain regions from diffusing into the channel region.
摘要翻译：本发明涉及通过使用多晶硅形成有源区域，漏极区域和沟道区域的MOS晶体管的半导体器件以及半导体器件的制造方法。碳，氧或/和氮的离子在其整个面积上被引入到多晶硅层中，并且抑制源区和漏区中的导电离子扩散到沟道区。

24. 发明授权

US11576084B2 Resource management system, resource management device, and non-transitory recording medium 有权
公开(公告)号：US11576084B2
公开(公告)日：2023-02-07
申请号：US17326817
申请日：2021-05-21
申请人： Ryuichi Saito
发明人： Ryuichi Saito
IPC分类号： H04L67/75 , H04W28/26 , H04B7/155 , H04L9/40 , H04W84/12
摘要： A resource management system includes a resource management device that manages a usage of a resource, a reservation management device that manages a reservation for the resource, and a communication relay device that communicates with the resource management device. The resource management device receives reservation information transmitted from the reservation management device. The reservation information is information on the reservation for the resource. The resource management device transmits, to the communication relay device, a request for identification information identifying the communication relay device. The resource management device receives the identification information, which is transmitted from the communication relay device in response to the request. The identification information is used to execute an event associated with the reservation information. The resource management device transmits, to an operation display terminal that displays a usage status of the resource, the identification information and a password that is associated with the identification information.

25. 发明授权

US08503209B2 Power conversion apparatus and cooling structure therefor 有权
标题翻译：电力转换装置及其冷却结构
公开(公告)号：US08503209B2
公开(公告)日：2013-08-06
申请号：US13273162
申请日：2011-10-13
申请人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito
发明人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito
IPC分类号： H02M7/537 , H02M7/5387
CPC分类号： H05K7/20927 , H01L23/473 , H01L23/50 , H01L2924/0002 , H01L2924/3011 , H02M7/003 , H02M7/537 , H02M7/5387 , H05K7/209 , H01L2924/00
摘要： Technology leading to a size reduction in a power conversion apparatus comprising a cooling function and technology relating to enhancing productivity and enhancing reliability necessary for commercial production are provided. Series circuits comprising an upper arm and lower arm of an inverter circuit are built in a single semiconductor module 500. The semiconductor module has cooling metal on two sides. An upper arm semiconductor chip and lower arm semiconductor chip are wedged between the cooling metals. The semiconductor module is inserted inside a channel case main unit 214. A DC positive electrode terminal 532, a DC negative electrode terminal 572, and an alternating current terminal 582 of a semiconductor chip are disposed in the semiconductor module. The DC terminals 532 and 572 are electrically connected with a terminal of a capacitor module. The alternating current terminal 582 is electrically connected with a motor generator via an AC connector.
摘要翻译：提供了一种功率转换装置的尺寸减小的技术，其包括与提高生产率并提高商业生产所需的可靠性相关的冷却功能和技术。包括逆变器电路的上臂和下臂的串联电路内置在单个半导体模块500中。半导体模块在两侧具有冷却金属。上臂半导体芯片和下臂半导体芯片楔入冷却金属之间。半导体模块插入通道壳体主单元214内。半导体模块中设置有直流正极端子532，直流负极端子572和半导体芯片的交流端子582。直流端子532和572与电容器模块的端子电连接。交流端子582经由AC连接器与电动发电机电连接。

26. 发明申请

US20130168148A1 MULTILAYER PRINTED WIRING BOARD AND METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：多层印刷接线板及其制造方法
公开(公告)号：US20130168148A1
公开(公告)日：2013-07-04
申请号：US13822446
申请日：2011-11-24
申请人： Toshinobu Kanai , Ryuichi Saito , Hideki Higashitani
发明人： Toshinobu Kanai , Ryuichi Saito , Hideki Higashitani
IPC分类号： H05K1/02
CPC分类号： H05K1/0298 , H05K1/0269 , H05K3/4069 , H05K3/462 , H05K3/4638 , H05K2201/0191 , H05K2201/0355 , H05K2201/096 , H05K2201/09918 , H05K2203/068 , Y10T156/10
摘要： A multilayer wiring board includes a double-sided wiring board, an insulating substrate stacked on the double-sided wiring board, vias provided in through-holes in the insulating substrate, an outermost wiring on an upper surface of the insulating substrate, a first fiducial mark provided on the double-sided wiring board, and a second fiducial mark provided on the insulating substrate. The first fiducial mark contains a wiring of the double-sided wiring board. The second fiducial mark contains at least one via out of the vias. The first and second fiducial marks are provided for positioning the double-sided wiring board and the insulating substrate to each other. This multilayer wiring board includes layers positioned precisely.
摘要翻译：多层布线基板包括双面布线板，堆叠在双面布线板上的绝缘基板，设置在绝缘基板中的通孔中的通孔，绝缘基板的上表面上的最外布线，第一基准设置在双面布线板上的标记和设置在绝缘基板上的第二基准标记。第一个基准标记包含双面接线板的布线。第二个基准标记在通孔中至少包含一个通孔。提供第一和第二基准标记用于将双面布线板和绝缘基板彼此定位。这种多层布线板包括精确定位的层。

27. 发明申请

US20120033475A1 POWER CONVERSION APPARATUS 有权
标题翻译：功率转换装置
公开(公告)号：US20120033475A1
公开(公告)日：2012-02-09
申请号：US13273162
申请日：2011-10-13
申请人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito
发明人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito
IPC分类号： H02M7/537
CPC分类号： H05K7/20927 , H01L23/473 , H01L23/50 , H01L2924/0002 , H01L2924/3011 , H02M7/003 , H02M7/537 , H02M7/5387 , H05K7/209 , H01L2924/00
摘要： Technology leading to a size reduction in a power conversion apparatus comprising a cooling function and technology relating to enhancing productivity and enhancing reliability necessary for commercial production are provided. Series circuits comprising an upper arm and lower arm of an inverter circuit are built in a single semiconductor module 500. The semiconductor module has cooling metal on two sides. An upper arm semiconductor chip and lower arm semiconductor chip are wedged between the cooling metals. The semiconductor module is inserted inside a channel case main unit 214. A DC positive electrode terminal 532, a DC negative electrode terminal 572, and an alternating current terminal 582 of a semiconductor chip are disposed in the semiconductor module. The DC terminals 532 and 572 are electrically connected with a terminal of a capacitor module. The alternating current terminal 582 is electrically connected with a motor generator via an AC connector.
摘要翻译：提供了一种功率转换装置的尺寸减小的技术，其包括与提高生产率并提高商业生产所需的可靠性相关的冷却功能和技术。包括逆变器电路的上臂和下臂的串联电路内置在单个半导体模块500中。半导体模块在两侧具有冷却金属。上臂半导体芯片和下臂半导体芯片楔入冷却金属之间。半导体模块插入通道壳体主单元214内。半导体模块中设置有直流正极端子532，直流负极端子572和半导体芯片的交流端子582。直流端子532和572与电容器模块的端子电连接。交流端子582经由AC连接器与电动发电机电连接。

28. 发明授权

US08064234B2 Power conversion apparatus 有权
标题翻译：电力转换装置
公开(公告)号：US08064234B2
公开(公告)日：2011-11-22
申请号：US12019990
申请日：2008-01-25
申请人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito
发明人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito
IPC分类号： H02M7/537 , H02M7/5387
CPC分类号： H05K7/20927 , H01L23/473 , H01L23/50 , H01L2924/0002 , H01L2924/3011 , H02M7/003 , H02M7/537 , H02M7/5387 , H05K7/209 , H01L2924/00
摘要： Technology leading to a size reduction in a power conversion apparatus comprising a cooling function and technology relating to enhancing productivity and enhancing reliability necessary for commercial production are provided. Series circuits comprising an upper arm and lower arm of an inverter circuit are built in a single semiconductor module 500. The semiconductor module has cooling metal on two sides. An upper arm semiconductor chip and lower arm semiconductor chip are wedged between the cooling metals. The semiconductor module is inserted inside a channel case main unit 214. A DC positive electrode terminal 532, a DC negative electrode terminal 572, and an alternating current terminal 582 of a semiconductor chip are disposed in the semiconductor module. The DC terminals 532 and 572 are electrically connected with a terminal of a capacitor module. The alternating current terminal 582 is electrically connected with a motor generator via an AC connector.
摘要翻译：提供了一种功率转换装置的尺寸减小的技术，其包括与提高生产率并提高商业生产所需的可靠性相关的冷却功能和技术。包括逆变器电路的上臂和下臂的串联电路内置在单个半导体模块500中。半导体模块在两侧具有冷却金属。上臂半导体芯片和下臂半导体芯片楔入冷却金属之间。半导体模块插入通道壳体主单元214内。半导体模块中设置有直流正极端子532，直流负极端子572和半导体芯片的交流端子582。直流端子532和572与电容器模块的端子电连接。交流端子582经由AC连接器与电动发电机电连接。

29. 发明授权

US07812443B2 Power semiconductor module for inverter circuit system 有权
标题翻译：用于逆变器电路系统的功率半导体模块
公开(公告)号：US07812443B2
公开(公告)日：2010-10-12
申请号：US12060629
申请日：2008-04-01
申请人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito
发明人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito
IPC分类号： H01L23/10
CPC分类号： H01L25/115 , H01L23/473 , H01L25/072 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H02M7/003 , H02M7/81 , H05K7/20927 , H01L2924/00014 , H01L2924/00
摘要： A double-face-cooled semiconductor module with an upper arm and a lower arm of an inverter circuit includes first and second heat dissipation members, each having a heat dissipation surface on one side and a conducting member formed on another side through an insulation member. On the conducting member on the first dissipation plate is provided with a fixing portion that fixes a collector surface of the semiconductor chip and a gate conductor connected to a gate terminal of the semiconductor module. The gate electrode terminal and the gate conductor are wire bonded. The conducting member on the second heat dissipation member is connected to an emitter surface of the semiconductor chip connected to the first heat dissipation member. The productivity and reliability are improved by most of formation operations for the upper and lower arms series circuit on one of the heat dissipation member.
摘要翻译：具有逆变器电路的上臂和下臂的双面冷却半导体模块包括第一和第二散热构件，每个散热构件具有一侧的散热面和通过绝缘构件形成在另一侧的导电构件。在第一散热板上的导电部件上设置有固定部分，该固定部分固定半导体芯片的集电极表面和连接到半导体模块的栅极端子的栅极导体。栅电极端子和栅极导体线接合。第二散热构件上的导电构件连接到连接到第一散热构件的半导体芯片的发射极表面。通过在散热构件之一上的上下臂系列电路的大多数形成操作来提高生产率和可靠性。

30. 发明授权

US07660122B2 Electrical apparatus, cooling system therefor, and electric vehicle 失效
标题翻译：电气设备，冷却系统及电动车辆
公开(公告)号：US07660122B2
公开(公告)日：2010-02-09
申请号：US11765732
申请日：2007-06-20
申请人： Takayoshi Nakamura , Akihiro Tamba , Ryuichi Saito , Atsuo Nishihara
发明人： Takayoshi Nakamura , Akihiro Tamba , Ryuichi Saito , Atsuo Nishihara
IPC分类号： H05K7/20 , F28F7/00 , H02G3/03 , H01L23/34 , B60K1/00
CPC分类号： H05K7/20927 , B60H1/00392 , B60H1/00428 , B60L15/007 , B60L2240/525 , H01L23/473 , H01L2924/0002 , H02M7/003 , Y02T10/645 , Y02T10/88 , H01L2924/00
摘要： An inverter apparatus includes a liquid path in which cooling water flows, and in which the cooling water performs cooling at a cooling part located directly underneath the power circuit part of the inverter apparatus. The liquid path includes a first partial structure part formed between a feed pipe and the cooling part, and having a liquid path cross-sectional profile that is gradually reduced in the short-side direction of the cooling part and that is gradually enlarged in the long-side direction thereof; and a second partial structure part formed between the cooling part and a drain pipe, and having a liquid path cross-sectional profile that is gradually enlarged from the short-side of the cooling part and that is gradually reduced from the long-side thereof.
摘要翻译：逆变器装置包括冷却水流动的液体通路，冷却水在逆变器装置的电源电路部正下方的冷却部进行冷却。液体路径包括形成在供给管和冷却部之间的第一部分结构部分，并且具有在冷却部的短边方向上逐渐减小的液体流路横截面轮廓，并且在长度方向上逐渐变大的方向; 以及第二部分结构部分，其形成在冷却部分和排水管之间，并且具有从冷却部分的短边逐渐增大并且从其长边逐渐减小的液体流路横截面轮廓。

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