专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20110289466A1 Table-Based DFM for Accurate Post-Layout Analysis 有权
标题翻译：基于表的DFM，用于精确的后期布局分析
公开(公告)号：US20110289466A1
公开(公告)日：2011-11-24
申请号：US13195907
申请日：2011-08-02
申请人： Yung-Chin Hou , Ying-Chou Cheng , Ru-Gun Liu , Chih-Ming Lai , Yi-Kan Cheng , Chung-Kai Lin , Hsiao-Shu Chao , Ping-Heng Yeh , Min-Hong Wu , Yao-Ching Ku , Tsong-Hua Ou
发明人： Yung-Chin Hou , Ying-Chou Cheng , Ru-Gun Liu , Chih-Ming Lai , Yi-Kan Cheng , Chung-Kai Lin , Hsiao-Shu Chao , Ping-Heng Yeh , Min-Hong Wu , Yao-Ching Ku , Tsong-Hua Ou
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G06F17/5081
摘要： Disclosed is a system and method for integrated circuit designs and post layout analysis. The integrated circuit design method includes providing a plurality of IC devices with various design dimensions; collecting electrical performance data of the IC devices; extracting equivalent dimensions of the IC devices; generating a shape related model to relate the equivalent dimensions to the electrical performance data of the IC devices; and creating a data refinement table using the equivalent dimensions and the electrical performance data.
摘要翻译：公开了一种用于集成电路设计和后期布局分析的系统和方法。集成电路设计方法包括提供具有各种设计尺寸的多个IC器件; 收集IC器件的电气性能数据; 提取IC器件的等效尺寸; 产生形状相关模型以将等效尺寸与IC器件的电性能数据相关联; 以及使用等效尺寸和电气性能数据创建数据细化表。

22. 发明授权

US08037575B2 Method for shape and timing equivalent dimension extraction 有权
标题翻译：形状和时间等值尺寸提取方法
公开(公告)号：US08037575B2
公开(公告)日：2011-10-18
申请号：US12211624
申请日：2008-09-16
申请人： Ying-Chou Cheng , Chih-Ming Lai , Ru-Gun Liu , Tsong-Hua Ou , Min-Hong Wu , Yih-Yuh Doong , Hsiao-Shu Chao , Yi-Kan Cheng , Yao-Ching Ku , Cliff Hou
发明人： Ying-Chou Cheng , Chih-Ming Lai , Ru-Gun Liu , Tsong-Hua Ou , Min-Hong Wu , Yih-Yuh Doong , Hsiao-Shu Chao , Yi-Kan Cheng , Yao-Ching Ku , Cliff Hou
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G06F2217/12 , Y02P90/265 , Y10T16/2771
摘要： An integrated circuit (IC) design method includes providing an IC layout contour based on an IC design layout of an IC device and IC manufacturing data; generating an effective rectangle layout to represent the IC layout contour; and simulating the IC device using the effective rectangular layout.
摘要翻译：集成电路（IC）设计方法包括基于IC器件的IC设计布局和IC制造数据提供IC布局轮廓; 生成有效的矩形布局来表示IC布局轮廓; 并使用有效的矩形布局模拟IC器件。

23. 发明申请

US20070232402A1 Precision friction clutch module 审中-公开
标题翻译：精密摩擦离合器模块
公开(公告)号：US20070232402A1
公开(公告)日：2007-10-04
申请号：US11397272
申请日：2006-04-03
申请人： Ying-Chou Cheng
发明人： Ying-Chou Cheng
IPC分类号： F16D7/02
CPC分类号： F16D7/024
摘要： A clutch includes a hub having a hub flange formed at a first end. The clutch further includes a clutch tube having a central aperture formed therein, a clutch tube flange, and a friction surface that is substantially planar. The central aperture is configured to receive the shaft and is substantially perpendicular to the friction surface. The clutch further includes a clutch plate having a clutch surface that is substantially planar and is in contact with the friction surface. The clutch further includes a fastener configured to couple the clutch plate to the hub; and a spring device configured to push the hub flange and the clutch tube flange away from one another and push the friction surface to contact the clutch surface.
摘要翻译：离合器包括具有在第一端形成的轮毂凸缘的轮毂。离合器还包括其中形成有中心孔的离合器管，离合器管凸缘和基本上平面的摩擦表面。中心孔被构造成接收轴并基本上垂直于摩擦表面。离合器还包括离合器片，该离合器片具有基本平坦且与摩擦表面接触的离合器表面。离合器还包括被配置成将离合器片联接到轮毂的紧固件; 以及弹簧装置，其构造成将轮毂凸缘和离合器管凸缘彼此远离推动并推动摩擦表面接触离合器表面。

24. 发明授权

US09367655B2 Topography-aware lithography pattern check 有权
标题翻译：地形感知光刻图案检查
公开(公告)号：US09367655B2
公开(公告)日：2016-06-14
申请号：US13443568
申请日：2012-04-10
申请人： I-Chang Shih , Chung-min Fu , Ying-Chou Cheng , Yung-Fong Lu , Feng-Yuan Chiu , Chiu Hsiu Chen
发明人： I-Chang Shih , Chung-min Fu , Ying-Chou Cheng , Yung-Fong Lu , Feng-Yuan Chiu , Chiu Hsiu Chen
IPC分类号： H01L21/66 , G06F17/50 , G03F7/20
CPC分类号： G06F17/5027 , G03F7/705 , H01L22/10 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method. The method includes obtaining an integrated circuit (IC) layout. The method includes providing a polishing process simulation model. The method includes performing a lithography pattern check (LPC) process to the IC layout. The LPC process is performed at least in part using the polishing process simulation model. The method includes detecting, in response to the LPC process, possible problem areas on the IC layout. The method includes modifying the polishing process simulation model. The method includes repeating the performing the LPC process and the detecting the possible problem areas using the modified polishing process simulation model.
摘要翻译：本公开提供了一种方法。该方法包括获得集成电路（IC）布局。该方法包括提供抛光过程模拟模型。该方法包括对IC布局执行光刻图案校验（LPC）处理。 LPC处理至少部分地使用抛光工艺模拟模型进行。该方法包括响应于LPC过程检测IC布局上的可能问题区域。该方法包括修改抛光过程仿真模型。该方法包括重复执行LPC处理和使用改进的抛光处理模拟模型来检测可能的问题区域。

25. 发明申请

US20130267047A1 Topography-Aware Lithography Pattern Check 有权
标题翻译：地形感知光刻图案检查
公开(公告)号：US20130267047A1
公开(公告)日：2013-10-10
申请号：US13443568
申请日：2012-04-10
申请人： I-Chang Shih , Chung-min Fu , Ying-Chou Cheng , Yung-Fong Lu , Feng-Yuan Chiu , Chiu Hsiu Chen
发明人： I-Chang Shih , Chung-min Fu , Ying-Chou Cheng , Yung-Fong Lu , Feng-Yuan Chiu , Chiu Hsiu Chen
IPC分类号： H01L21/66 , G06F17/50
CPC分类号： G06F17/5027 , G03F7/705 , H01L22/10 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method. The method includes obtaining an integrated circuit (IC) layout. The method includes providing a polishing process simulation model. The method includes performing a lithography pattern check (LPC) process to the IC layout. The LPC process is performed at least in part using the polishing process simulation model. The method includes detecting, in response to the LPC process, possible problem areas on the IC layout. The method includes modifying the polishing process simulation model. The method includes repeating the performing the LPC process and the detecting the possible problem areas using the modified polishing process simulation model.
摘要翻译：本公开提供了一种方法。该方法包括获得集成电路（IC）布局。该方法包括提供抛光过程模拟模型。该方法包括对IC布局执行光刻图案校验（LPC）处理。 LPC处理至少部分地使用抛光工艺模拟模型进行。该方法包括响应于LPC过程检测IC布局上的可能问题区域。该方法包括修改抛光过程仿真模型。该方法包括重复执行LPC处理和使用改进的抛光处理模拟模型来检测可能的问题区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式