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    • 21. 发明授权
    • Method for chemical mechanical polishing a substrate
    • 化学机械抛光基材的方法
    • US08119529B2
    • 2012-02-21
    • US12432021
    • 2009-04-29
    • Yi GuoZhendong Liu
    • Yi GuoZhendong Liu
    • H01L21/302
    • H01L21/31053B24B37/0056B24B37/044C09G1/02
    • A method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises: water, an abrasive; a diquaternary cation according to formula (I); and optionally a quaternary alkylammonium compound; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6; wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 Å/min.
    • 一种用于基板的化学机械抛光的方法,包括:提供基板,其中所述基板包括二氧化硅; 提供化学机械抛光组合物,其中所述化学机械抛光组合物包括:水,研磨剂; 式(I)的二季阳离子; 和任选的季烷基铵化合物; 提供化学机械抛光垫; 在化学机械抛光垫和基底之间的界面处产生动态接触; 以及将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物的pH为2至6; 其中化学机械抛光组合物的二氧化硅去除率至少为1500埃/分钟。
    • 23. 发明申请
    • METHOD OF POLISHING A SUBSTRATE COMPRISING POLYSILICON AND AT LEAST ONE OF SILICON OXIDE AND SILICON NITRIDE
    • 抛光包含多晶硅和至少一种氧化硅和氮化硅的基材的方法
    • US20110230050A1
    • 2011-09-22
    • US12724990
    • 2010-03-16
    • Yi GuoZhendong LiuKancharla-Arun Kumar ReddyGuangyun Zhang
    • Yi GuoZhendong LiuKancharla-Arun Kumar ReddyGuangyun Zhang
    • H01L21/306
    • H01L21/31053C09G1/02
    • A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.
    • 提供了一种用于基板的化学机械抛光的方法,包括:提供基板,其中所述基板包括多晶硅和氧化硅和氮化硅中的至少一种; 提供化学机械抛光组合物,其包含作为初始组分的水; 研磨剂 烷基芳基聚醚磺酸酯化合物,其中烷基芳基聚醚磺酸酯化合物具有与芳环结合的烷基的疏水部分和具有4至100个碳原子的非离子非环状亲水部分; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中所述至少一种氧化硅和氮化硅中的至少一种从所述衬底去除。
    • 24. 发明申请
    • Method for chemical mechanical polishing a substrate
    • 化学机械抛光基材的方法
    • US20100279507A1
    • 2010-11-04
    • US12432021
    • 2009-04-29
    • Yi GuoZhendong Liu
    • Yi GuoZhendong Liu
    • H01L21/306
    • H01L21/31053B24B37/0056B24B37/044C09G1/02
    • A method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises: water, an abrasive; a diquaternary cation according to formula (I); and optionally a quaternary alkylammonium compound; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6; wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 Å/min.
    • 一种用于基板的化学机械抛光的方法,包括:提供基板,其中所述基板包括二氧化硅; 提供化学机械抛光组合物,其中所述化学机械抛光组合物包括:水,研磨剂; 式(I)的二季阳离子; 和任选的季烷基铵化合物; 提供化学机械抛光垫; 在化学机械抛光垫和基底之间的界面处产生动态接触; 以及将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物的pH为2至6; 其中化学机械抛光组合物的二氧化硅去除率至少为1500埃/分钟。
    • 26. 发明授权
    • Distributed network monitoring system and method
    • 分布式网络监控系统及方法
    • US07370356B1
    • 2008-05-06
    • US10350172
    • 2003-01-22
    • Yi Guo
    • Yi Guo
    • G06F11/00H04L12/28H04L9/00H04L1/00H04K1/00
    • H04L63/0861G06Q20/0855H04L63/101
    • Methods and systems for protecting the computer network against unauthorized access are disclosed. Information is reported about each network device connected to the network and/or one or more corresponding users. The reported information is correlated to determine if any unauthorized devices are connected to the network. To report the desired information, each device authorized to use the network may be provided with an agent configured to report information about the device to which it corresponds and information about one or more neighboring devices. A “reporting your neighbor” method may be used wherein each network device report its address and the address of its neighbors may be used to determine if any device is not reporting its address. Alternatively, each agent may report information about its device's physical location, e.g., by global positioning satellite (GPS). A door badge system may be used to provide user location information.
    • 公开了用于保护计算机网络免受未经授权的访问的方法和系统。 报告关于连接到网络和/或一个或多个相应用户的每个网络设备的信息。 报告的信息是相关的,以确定是否有任何未经授权的设备连接到网络。 为了报告所需的信息,授权使用网络的每个设备可以被提供有被配置为报告关于其对应的设备的信息的代理和关于一个或多个相邻设备的信息的代理。 可以使用“报告您的邻居”方法,其中每个网络设备报告其地址,并且可以使用其邻居的地址来确定是否有任何设备不报告其地址。 或者,每个代理可以例如通过全球定位卫星(GPS)来报告关于其设备的物理位置的信息。 可以使用门徽系统来提供用户位置信息。
    • 30. 发明授权
    • Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride
    • 抛光包括多晶硅,氧化硅和氮化硅的衬底的方法
    • US08491808B2
    • 2013-07-23
    • US12724685
    • 2010-03-16
    • Yi GuoZhendong LiuKancharla-Arun Kumar ReddyGuangyun Zhang
    • Yi GuoZhendong LiuKancharla-Arun Kumar ReddyGuangyun Zhang
    • C03C15/00C03C25/68H01L21/302H01L21/461
    • H01L21/31053C09G1/02C09K3/1463
    • A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon, silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; and a substance according to formula I wherein each of R1, R2, R3, R4, R5, R6 and R7 is a bridging group having a formula —(CH2)n—, wherein n is an integer selected from 1 to 10; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the silicon oxide and silicon nitride is removed from the substrate.
    • 提供了一种用于基板的化学机械抛光的方法,包括:提供基板,其中所述基板包括多晶硅,氧化硅和氮化硅; 提供化学机械抛光组合物,其包含作为初始组分的水; 研磨剂 烷基芳基聚醚磺酸盐化合物,其中烷基芳基聚醚磺酸盐化合物具有与芳环结合的烷基的疏水部分和具有4至100个碳原子的非离子非环状亲水部分; 和根据式I的物质,其中R1,R2,R3,R4,R5,R6和R7中的每一个是具有式 - (CH 2)n - 的桥连基团,其中n是选自1至10的整数; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中从所述衬底去除所述氧化硅和氮化硅中的至少一些。