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21. 发明授权

US5279670A Vertical type diffusion apparatus 失效
标题翻译：立式扩散装置
公开(公告)号：US5279670A
公开(公告)日：1994-01-18
申请号：US674884
申请日：1991-03-26
申请人： Singo Watanabe , Wataru Okase
发明人： Singo Watanabe , Wataru Okase
IPC分类号： C30B31/16 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67115 , C30B31/16
摘要： An oxidation apparatus for applying oxidation treatment to a plurality of semiconductor wafers includes a vertical-type reaction tube in which the wafers are housed, and an outer tube coaxially located outside the reaction tube with a space interposed between them. A heater is located enclosing the outer tube. The space between both of the tubes serves as a passage for pre-heating a treating gas passing through the space. A pipe for supplying the treating gas into the space is connected to the lower portion of the outer tube. A diffusion plate is formed at the top of the reaction tube and it is provided with a plurality of diffusion holes through which the treating gas is introduced into the reaction tube after the gas passes through the space. The space between both of the tubes is partitioned by a spiral pipe made of quartz and the gas pre-heating passage is thus formed spiral extending from the gas supply pipe to the diffusion plate. A pipe for discharging the treating gas outside the reaction tube is connected to the lower portion of the reaction tube.
摘要翻译：用于对多个半导体晶片进行氧化处理的氧化装置包括容纳晶片的垂直型反应管，以及同轴地位于反应管外侧的外管，并在它们之间插入空间。封闭外管的加热器。两个管之间的空间用作预热通过该空间的处理气体的通道。用于将处理气体供给到空间中的管道连接到外管的下部。扩散板形成在反应管的顶部，并且在气体通过该空间之后设置有多个扩散孔，通过该漫射孔将处理气体引入反应管中。两个管之间的空间被由石英制的螺旋管分隔开，并且气体预热通道形成为从气体供给管延伸到扩散板的螺旋形螺旋管。用于将处理气体排出反应管外的管连接到反应管的下部。

22. 发明申请

US20090146089A1 PRESSURE TYPE FLOW RATE CONTROL REFERENCE AND CORROSION RESISTANT PRESSURE TYPE FLOW RATE CONTROLLER USED FOR THE SAME 有权
标题翻译：压力型流量控制参考和耐腐蚀压力类型流量控制器
公开(公告)号：US20090146089A1
公开(公告)日：2009-06-11
申请号：US12332897
申请日：2008-12-11
申请人： Shuji Moriya , Wataru Okase , Tsutomu Shinohara , Nobukazu Ikeda , Michio Yamaji , Yasutaka Hayashi , Toshihide Yoshida , Yasuyuki Omata
发明人： Shuji Moriya , Wataru Okase , Tsutomu Shinohara , Nobukazu Ikeda , Michio Yamaji , Yasutaka Hayashi , Toshihide Yoshida , Yasuyuki Omata
IPC分类号： F16K31/12
CPC分类号： G05D7/0635 , Y10T137/2708 , Y10T137/776 , Y10T137/7761 , Y10T137/7793
摘要： A pressure type flow rate control reference which allows performance of flow rate calibrations of a flow rate controller on all types of gases, including corrosive gases, at low costs, and also has excellent flow rate control accuracy.The pressure type flow rate control reference includes a pressure controller for adjusting the pressure of a calibration gas from a calibration gas supply source, a first volume provided on the downstream side of a pressure controller, a first connection mouth of an uncalibrated flow rate controller provided on the downstream side of the first volume, a reference pressure type flow rate controller connected to a second connection mouth on the downstream side of the uncalibrated flow rate controller, a second volume provided on the downstream side of a reference pressure type flow rate controller, and an evacuation device provided on the downstream side of the second volume.
摘要翻译：一种压力式流量控制参考，其允许以低成本执行流量控制器对所有类型气体（包括腐蚀性气体）的流量校准，并且还具有优异的流速控制精度。压力型流量控制基准包括用于调节来自校准气体供给源的校准气体的压力的压力控制器，设置在压力控制器的下游侧的第一容积，未校准的流量控制器的第一连接口，在第一容积的下游侧具有与未校准流量控制器的下游侧的第二连接口连接的基准压力型流量控制器，设置在基准压力型流量控制器的下游侧的第二容积，以及设置在第二容积的下游侧的抽空装置。

23. 发明申请

US20070187868A1 Pasting method and pasting apparatus 审中-公开
标题翻译：粘贴方法和粘贴装置
公开(公告)号：US20070187868A1
公开(公告)日：2007-08-16
申请号：US10566217
申请日：2004-07-14
申请人： Tsuyoshi Aruga , Junichi Hagihara , Wataru Okase , Eiji Yamaguchi
发明人： Tsuyoshi Aruga , Junichi Hagihara , Wataru Okase , Eiji Yamaguchi
IPC分类号： B29C39/10
CPC分类号： B32B38/1833 , B32B37/1284 , B32B2038/1891 , H01L21/67092 , H01L27/14634
摘要： A pasting method and a pasting apparatus hold a thin plate 1 and a planar member 2 in high flatness respectively on a first holding member 44 and a second holding member 44, a main controller 40a controls a moving mechanism 45 and a parallelism adjusting mechanism 52 on the basis of information provided by position recognizing mechanisms 33 and 34 to align the thin plate 1 and the carrying member 2 with each other in a predetermined positional relation. The main controller 40a controls a moving mechanism 45 so as to move the thin plate 1 and the carrying member 2 relative to each other in a state where a liquid-phase liquid crystal wax heated by a heater 49 is held between the thin plate 1 and the carrying member 2 to spread the liquid-phase liquid crystal wax over the entire surfaces of the thin plate 1 and the carrying member 2. Thus the thin plate 1, such as a semiconductor wafer or a metal foil, can be accurately, surely and efficiently pasted to the carrying member 2, and the thin plate 1 pasted to the carrying member 2 can be readily separated from the carrying member 2.
摘要翻译：粘贴方法和粘贴装置将第一保持构件44和第二保持构件44上的薄板1和平面构件2分别保持在高平面度，主控制器40a控制移动机构45和平行度调节机构52 基于由位置识别机构33和34提供的信息，以使薄板1和承载构件2以预定的位置关系彼此对准。主控制器40a控制移动机构45，以便在由加热器49加热的液相蜡保持在薄板1之间的状态下相对于彼此移动薄板1和承载构件2 和携带部件2将液相液晶蜡扩散到薄板1和承载部件2的整个表面上。因此，可以将准确可靠且有效地粘贴到承载构件2上的诸如半导体晶片或金属箔的薄板1粘贴到承载构件2上的薄板1能够容易地从承载构件2分离。

24. 发明授权

US07112268B2 Plating device and plating method 失效
标题翻译：电镀装置及电镀方法
公开(公告)号：US07112268B2
公开(公告)日：2006-09-26
申请号：US10468781
申请日：2002-02-20
申请人： Wataru Okase , Takenobu Matsuo
发明人： Wataru Okase , Takenobu Matsuo
IPC分类号： C25D7/12 , C25D17/06 , C25D17/00 , C25D17/02
CPC分类号： C25D17/001 , C25D7/123 , C25D17/06 , H01L21/2885
摘要： A plating device and a plating method are provided that are capable of enhancing uniformity in plating on a treatment surface of an object to be treated. The plating device includes: a plating solution bath capable of storing a plating solution and having a first electrode to be immersed in the stored plating solution; a treatment object holding mechanism configured to hold the object to be treated to bring the treatment surface thereof into contact with the plating solution; and a contact disposed in the treatment object holding mechanism and brought into electrical contact with a peripheral edge of the object to be treated so as to make a conductive layer on the treatment surface, which is brought into contact with the plating solution, serve as a second electrode, the contact having a bellows construction or a spring construction movable in a direction facing the object to be treated, and the treatment object holding mechanism being capable of holding the object to be treated while the bellows construction or the like in the contact is in a compressed state. The contact itself is formed as a pliable structure instead of a rigid structure, thereby keeping the contact resistance constant by fluctuation in contact pressure which is controlled to be small even when a slight displacement of the compression direction occurs.
摘要翻译：提供能够提高被处理物的处理面上的电镀均匀性的电镀装置和电镀方法。电镀装置包括：电镀溶液浴，其能够存储电镀液，并具有要浸入所述电镀溶液中的第一电极; 处理对象保持机构，其构造成保持被处理物体使其处理面与电镀液接触; 以及设置在处理对象保持机构中并与待处理物体的周边边缘电接触以在与电镀液接触的处理面上形成导电层的接触件作为第二电极，具有波纹管结构的接触件或可沿面向被处理物体的方向移动的弹簧结构，以及能够在接触处的波纹管结构等处保持待处理物体的处理对象保持机构为处于压缩状态。接触本身形成为柔性结构而不是刚性结构，从而即使当发生压缩方向的轻微位移时，接触压力的波动也保持接触电阻恒定，该接触压力的波动被控制为较小。

25. 发明授权

US06953522B2 Liquid treatment method using alternating electrical contacts 失效
标题翻译：使用交流电触点的液体处理方法
公开(公告)号：US06953522B2
公开(公告)日：2005-10-11
申请号：US09849345
申请日：2001-05-07
申请人： Kyungho Park , Wataru Okase , Takenobu Matsuo
发明人： Kyungho Park , Wataru Okase , Takenobu Matsuo
IPC分类号： C25D7/12 , C25F7/00 , C25D5/00 , C25F3/00
CPC分类号： C25D7/12 , C25F7/00 , Y10S204/07
摘要： A contact is disposed to come into contact with a metal layer formed on a substrate being treated, the contact being in contact with a surface being treated from an opposite surface through a through hole present in a substrate. Alternatively, a contact is disposed to come into contact with a metal layer formed on a substrate, the contact coming into contact at an approximate center of the substrate. Alternatively, a plurality of needle bodies are disposed to be in electrical contact with a metal layer of a substrate being treated, thereby power supply for electrolytic polishing/plating to a substrate being treated being implemented, without restricting to a periphery of a substrate, from a plurality of points on a surface thereof. Due to any one of these, liquid treatment equipment enables to improve uniformity in plane of an electric current sent to a surface being treated and of liquid treatment.
摘要翻译：接触件设置成与被处理的基底上形成的金属层接触，所述接触通过存在于基底中的通孔从正对表面接触。或者，接触件设置成与形成在基底上的金属层接触，接触在基板的大致中心处接触。或者，多个针体被设置为与被处理的基板的金属层电接触，从而对被处理的基板进行电解抛光/电镀的供电，而不限于基板的周边其表面上的多个点。由于这些中的任何一种，液体处理设备能够改善发送到被处理的表面和液体处理的电流的平面的均匀性。

26. 发明授权

US06756565B2 Thermal insulator having a honeycomb structure and heat recycle system using the thermal insulator 失效
公开(公告)号：US06756565B2
公开(公告)日：2004-06-29
申请号：US10026946
申请日：2001-12-27
申请人： Osamu Suenaga , Wataru Okase , Takenobu Matsuo
发明人： Osamu Suenaga , Wataru Okase , Takenobu Matsuo
IPC分类号： F27D112
CPC分类号： F28F13/14 , Y10T156/1348 , Y10T428/236 , Y10T428/24149 , Y10T428/24157
摘要： A thermal insulator can change a heat insulation characteristic partially with a simple structure. The thermal insulator is divided into a plurality of parts in accordance with a temperature of a heat source which is insulated by the thermal insulator. The plurality of parts are formed of different honeycomb structures, respectively, so as to provide different heat insulation characteristics. The plurality of parts may be formed by different materials, or a shape or dimension such as a cell pitch of the honeycomb structure may be varied. Heat is collected from air within the honeycomb cells, and is transferred to other parts for heating.

27. 发明授权

US5884009A Substrate treatment system 失效
标题翻译：基材处理系统
公开(公告)号：US5884009A
公开(公告)日：1999-03-16
申请号：US129752
申请日：1998-08-05
申请人： Wataru Okase
发明人： Wataru Okase
IPC分类号： H01L21/22 , H01L21/00 , H01L21/205 , H01L21/31 , F26B3/30
CPC分类号： H01L21/67017 , H01L21/67115
摘要： A heat-treatment system comprises a first vessel made of a metal, defining a processing chamber and provided in its side wall with an opening through which a wafer to be heat-treated is carried into and the heat-treated wafer is carried out of the first vessel, a second vessel made of a highly heat-resistant nonmetallic material, disposed in the processing chamber and provided in its side wall with an opening coinciding with the opening of the first vessel. A wafer support device is disposed in the processing chamber and has a wafer support table. A heating device for heating a wafer supported on the wafer support table, a process gas supply unit is disposed opposite to a wafer supported on the wafer support table. An enclosing side wall is extended from the periphery of the process gas supply unit so as to surround a processing space between the process gas supply unit and the wafer support table. The process gas supply unit is held on a level where the enclosing side wall covers the openings and define a small processing space around the wafer while the wafer is being subjected to a heat-treatment process. A purge gas is supplied into spaces between the first vessel and the second vessel to prevent the process gases from coming into contact with the first vessel made of a metal to prevent the corrosion of the first vessel.
摘要翻译：热处理系统包括由金属制成的第一容器，限定处理室并在其侧壁上设置有一个开口，待热处理的晶片通过该开口被承载，热处理的晶片由第一容器，由高耐热非金属材料制成的第二容器，设置在处理室中，并在其侧壁上设置与第一容器的开口重合的开口。晶片支撑装置设置在处理室中并具有晶片支撑台。一种用于加热支撑在晶片支撑台上的晶片的加热装置，处理气体供给单元与支撑在晶片支撑台上的晶片相对设置。封闭侧壁从处理气体供给单元的周边延伸，以便围绕处理气体供应单元和晶片支撑台之间的处理空间。处理气体供给单元保持在封闭侧壁覆盖开口的水平面上，并且在晶片经受热处理过程时在晶片周围限定小的处理空间。将净化气体供应到第一容器和第二容器之间的空间中，以防止处理气体与由金属制成的第一容器接触以防止第一容器的腐蚀。

28. 发明授权

US5427625A Method for cleaning heat treatment processing apparatus 失效
标题翻译：清洗热处理装置的方法
公开(公告)号：US5427625A
公开(公告)日：1995-06-27
申请号：US163799
申请日：1993-12-09
申请人： Wataru Okase , Masaaki Hasei
发明人： Wataru Okase , Masaaki Hasei
IPC分类号： C23C16/44 , B08B5/04
CPC分类号： C23C16/4408 , C23C16/4401 , C23C16/4412
摘要： While the interior of a reaction vessel is being deaerated by a first vacuum pump, an inert gas is supplied from an upstream side (reaction gas bottle side) of a flow rate control unit (MFC) to a reaction gas supply pipe. Thus, a reaction gas is substituted with the inert gas. A passageway downstream of the MFC is closed and the interior of the pipe is deaerated from the upstream side through a bypass pipe so that a predetermined degree of vacuum is obtained. Thus, the gas substituting efficiency can be improved. The interior of the reaction vessel and the interior of the reaction gas supply pipe are quickly deaerated without an influence of resistance of the MFC. The inert gas substitution process and the deaerating process are repeated for 10 cycles or more.
摘要翻译：当反应容器的内部被第一真空泵脱气时，从流量控制单元（MFC）的上游侧（反应气瓶侧）向反应气体供给管供给惰性气体。因此，反应气体被惰性气体代替。 MFC下游的通道封闭，并且管道内部从上游侧通过旁通管脱气，从而获得预定的真空度。因此，可以提高气体替代效率。反应容器的内部和反应气体供给管的内部不受MFC的电阻的影响而快速脱气。惰性气体置换过程和脱气过程重复10个循环或更多次。

29. 发明授权

US08381755B2 Pressure type flow rate control reference and corrosion resistant pressure type flow rate controller used for the same 失效
标题翻译：压力式流量控制参考和耐腐蚀压力式流量控制器用于相同
公开(公告)号：US08381755B2
公开(公告)日：2013-02-26
申请号：US13483159
申请日：2012-05-30
申请人： Shuji Moriya , Wataru Okase , Tsutomu Shinohara , Nobukazu Ikeda , Michio Yamaji , Yasutaka Hayashi , Toshihide Yoshida , Yasuyuki Omata
发明人： Shuji Moriya , Wataru Okase , Tsutomu Shinohara , Nobukazu Ikeda , Michio Yamaji , Yasutaka Hayashi , Toshihide Yoshida , Yasuyuki Omata
IPC分类号： G05D7/06 , G05D7/00 , F16K31/12 , F16K31/02 , G01F25/00
CPC分类号： G05D7/0635 , Y10T137/2708 , Y10T137/776 , Y10T137/7761 , Y10T137/7793
摘要： A pressure type flow rate control reference allows the performance of flow rate calibrations of a flow rate controller on all types of gases, including corrosive gases, at low costs, and also has excellent flow rate control accuracy. The pressure type flow rate control reference includes a pressure controller for adjusting the pressure of a calibration gas from a calibration gas supply source, a first volume provided on the downstream side of a pressure controller, a first connection mouth of an uncalibrated flow rate controller provided on the downstream side of the first volume, a reference pressure type flow rate controller connected to a second connection mouth on the downstream side of the uncalibrated flow rate controller, a second volume provided on the downstream side of a reference pressure type flow rate controller, and an evacuation device provided on the downstream side of the second volume.
摘要翻译：压力式流量控制参考允许以低成本执行流量控制器对所有类型气体（包括腐蚀性气体）的流量校准，并且还具有优异的流量控制精度。压力型流量控制基准包括用于调节来自校准气体供给源的校准气体的压力的压力控制器，设置在压力控制器的下游侧的第一容积，未校准的流量控制器的第一连接口，在第一容积的下游侧具有与未校准流量控制器的下游侧的第二连接口连接的基准压力型流量控制器，设置在基准压力型流量控制器的下游侧的第二容积，以及设置在第二容积的下游侧的抽空装置。

30. 发明授权

US06949719B2 Thermal insulator having a honeycomb structure and heat recycle system using the thermal insulator 失效
标题翻译：具有蜂窝结构的绝热体和使用该热绝缘体的热循环系统
公开(公告)号：US06949719B2
公开(公告)日：2005-09-27
申请号：US10831111
申请日：2004-04-26
申请人： Osamu Suenaga , Wataru Okase , Takenobu Matsuo
发明人： Osamu Suenaga , Wataru Okase , Takenobu Matsuo
IPC分类号： F27D1/00 , F27D17/00 , F28F13/14 , H01L21/22 , F27B5/14
CPC分类号： F28F13/14 , Y10T156/1348 , Y10T428/236 , Y10T428/24149 , Y10T428/24157
摘要： A thermal insulator can change a heat insulation characteristic partially with a simple structure. The thermal insulator is divided into a plurality of parts in accordance with a temperature of a heat source which is insulated by the thermal insulator. The plurality of parts are formed of different honeycomb structures, respectively, so as to provide different heat insulation characteristics. The plurality of parts may be formed by different materials, or a shape or dimension such as a cell pitch of the honeycomb structure may be varied. Heat is collected from air within the honeycomb cells, and is transferred to other parts for heating.
摘要翻译：绝热体可以通过简单的结构部分地改变绝热特性。热绝缘体根据由绝热体绝缘的热源的温度分为多个部分。多个部件分别由不同的蜂窝结构形成，以提供不同的隔热特性。多个部分可以由不同的材料形成，或者可以改变诸如蜂窝结构体的细胞间距的形状或尺寸。从蜂窝状细胞内的空气中收集热量，并将其转移到其他部分进行加热。

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