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21. 发明授权

US5413968A Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5413968A
公开(公告)日：1995-05-09
申请号：US22876
申请日：1993-02-25
申请人： Yasuo Inoue , Kazuyuki Sugahara , Takashi Ipposhi , Yasuo Yamaguchi , Tadashi Nishimura
发明人： Yasuo Inoue , Kazuyuki Sugahara , Takashi Ipposhi , Yasuo Yamaguchi , Tadashi Nishimura
IPC分类号： H01L21/3205 , H01L21/285 , H01L21/768 , H01L23/485 , H01L23/52 , H01L23/522 , H01L27/11 , H01L21/44
CPC分类号： H01L21/28518 , H01L23/485 , H01L27/11 , H01L27/1112 , H01L2924/0002
摘要： A semiconductor device includes a conductor layer (3, 7) having a silicon crystal, an insulator layer (5, 15) formed on the surface of the conductor layer (3, 7) having a contact hole therethrough to said surface of the conductor layer (3, 7), an interconnecting portion formed at a predetermined location in the insulator layer (5, 15) and having a contact hole (6, 9) the bottom surface of which becomes the surface of the conductor layer (3, 7), a barrier layer (14) formed at the bottom of said contact hole at least on the surface of the conductor layer (3, 7) in the interconnecting portion, and a metal silicide layer (12) formed on the barrier layer (14). This semiconductor device is manufactured by depositing the insulator layer (5, 15) having the contact hole (6, 9) on the conductor layer (3, 7) having the silicon crystal, forming the barrier layer (14) and the polysilicon layer (7, 10) overlapping each other in the contact hole (6, 9) and on the insulator layer (5, 15) and then patterning these overlapping barrier layer (14) and polysilicon layer (7, 10), forming a metal layer (8, 11) thereon to be silicidized, and removing unreacted metal. The semiconductor device thus manufactured prevents a suction of silicon from the conductor layer (3, 7) to the metal silicide layer (12) and hence prevents an increase in resistance value due to a deficiency of silicon produced in the conductor layer (3, 7), thereby minimizing a series resistance of the metal silicide layer (12), a contact portion and the conductor layer (3, 7).
摘要翻译：半导体器件包括具有硅晶体的导体层（3,7），形成在导体层（3,7）的表面上的绝缘体层（5,15），其具有穿过其的导体层的所述表面的接触孔（3,7），形成在所述绝缘体层（5,15）中的预定位置处并具有其底表面成为所述导体层（3,7）的表面的接触孔（6,9）的互连部分，至少在所述互连部分中的所述导体层（3,7）的表面上形成在所述接触孔的底部处的阻挡层（14）和形成在所述阻挡层（14）上的金属硅化物层（12）。该半导体器件通过在具有硅晶体的导体层（3,7）上沉积具有接触孔（6,9）的绝缘体层（5,15），形成阻挡层（14）和多晶硅层（ 7,10）在接触孔（6,9）和绝缘体层（5,15）上彼此重叠，然后对这些重叠的阻挡层（14）和多晶硅层（7,10）进行构图，形成金属层 8,11）在其上被硅化，并除去未反应的金属。这样制造的半导体器件防止硅从导体层（3,7）吸收到金属硅化物层（12），从而防止由于导体层（3,7）中产生的硅的缺陷导致的电阻值增加），从而使金属硅化物层（12），接触部分和导体层（3,7）的串联电阻最小化。

22. 发明授权

US5094714A Wafer structure for forming a semiconductor single crystal film 失效
标题翻译：用于形成半导体单晶膜的晶片结构
公开(公告)号：US5094714A
公开(公告)日：1992-03-10
申请号：US607800
申请日：1990-10-31
申请人： Tadashi Nishimura , Kazuyuki Sugahara , Shigeru Kusunoki , Yasuo Inoue
发明人： Tadashi Nishimura , Kazuyuki Sugahara , Shigeru Kusunoki , Yasuo Inoue
IPC分类号： H01L21/20 , C30B13/00 , H01L21/762
CPC分类号： C30B29/06 , C30B13/00 , H01L21/76297 , Y10T428/31504
摘要： A wafer structure for forming a semiconductor single crystal film comprises a semiconductor single crystal substrate, a plurality of recesses formed in a grooved shape to one main surface of the semiconductor single crystal substrate, insulation material embedded to the inside of these recesses, an insulation layer deposited over the insulation material and the semiconductor single crystal substrate and integrated with the insulation material and a polycrystalline or amorphous semiconductor layer to be recrystallized disposed over the insulation layer.A wafer structure with no or less grain boundaries can be obtained. Further, polycrystalline or amorphous semiconductor layer can be prevented from peeling off the substrate by the additional layering of a protecting insulation layer.
摘要翻译：用于形成半导体单晶膜的晶片结构包括半导体单晶衬底，形成为半导体单晶衬底的一个主表面的沟槽形状的多个凹槽，嵌入到这些凹部内部的绝缘材料，绝缘层沉积在绝缘材料和半导体单晶衬底上并与绝缘材料一体化，并且将多晶或非晶半导体层重结晶设置在绝缘层上。可以获得没有或没有晶界的晶片结构。此外，通过附加的保护绝缘层的分层，可以防止多晶或非晶半导体层从基板上剥离。

23. 发明授权

US4822752A Process for producing single crystal semiconductor layer and semiconductor device produced by said process 失效
标题翻译：通过所述方法制造单晶半导体层和半导体器件的制造方法
公开(公告)号：US4822752A
公开(公告)日：1989-04-18
申请号：US022717
申请日：1987-03-06
申请人： Kazuyuki Sugahara , Tadashi Nishimura , Shigeru Kusunoki , Yasuo Inoue
发明人： Kazuyuki Sugahara , Tadashi Nishimura , Shigeru Kusunoki , Yasuo Inoue
IPC分类号： H01L21/20 , H01L21/268 , H01L21/822 , H01L29/04 , H01L21/306 , H01L21/326 , H01L21/479
CPC分类号： H01L21/8221 , H01L21/2026 , H01L21/268 , H01L29/045 , Y10S117/904 , Y10S148/09 , Y10S148/091 , Y10S148/093
摘要： Disclosed herein is a process for producing a single crystal layer of a semiconductor device, which comprises the steps of providing an oxide insulator layer separated by an opening part for seeding, on a major surface of a single crystal semiconductor substrate of the cubic system, providing a polycrystalline or amorphous semiconductor layer on the entire surface of the insulator layer inclusive of the opening part, then providing a protective layer comprising at least a reflective or anti-reflection film comprising strips of a predetermined width, in a predetermined direction relative to the opening part and at a predetermined interval, the protective layer capable of controlling the temperature distributions in the semiconductor layer at the parts corresponding to the stripes or the parts not corresponding to the stripes, thereby completing a base for producing a semiconductor device, thereafter the surface of the base is irradiated with an energy beam through the striped reflective or anti-reflection film to melt the polycrystalline or amorphous semiconductor and scanning the energy beam in a predetermined direction such that the direction of the crystal of the semiconductor re-solidified and converted into a single crystal accords with a {111} plane, to produce the single crystal of the semiconductor device. Also disclosed is a semiconductor device produced by the method, which comprises a single crystal layer having a wide range of a crystal in a predetermined direction relative to the facial orientation of the major surface of the substrate, and has a three-dimensional semiconductor circuit element construction.
摘要翻译：本发明公开了一种制造半导体器件的单晶层的方法，其包括以下步骤：在立方晶系的单晶半导体衬底的主表面上提供由用于接种的开口部分开的氧化物绝缘体层，提供在包括开口部分的绝缘体层的整个表面上的多晶或非晶半导体层，然后提供保护层，该保护层至少包括反射膜或防反射膜，该反射膜或抗反射膜包括相对于开口的预定方向的预定宽度的条部分并且以预定间隔，保护层能够控制对应于条纹的部分或不对应于条纹的部分的半导体层中的温度分布，从而完成用于制造半导体器件的基底，之后，用能量束通过条纹反射照射基座或抗反射膜，以熔化多晶或非晶半导体并沿预定方向扫描能量束，使得半导体晶体的方向重新固化并转换成单晶符合{111}面，以产生半导体器件的单晶。还公开了一种通过该方法制造的半导体器件，该半导体器件包括相对于衬底的主表面的面取向在预定方向上具有宽范围的晶体的单晶层，并且具有三维半导体电路元件施工。

24. 发明授权

US06351014B2 Semiconductor device having different field oxide sizes 有权
标题翻译：具有不同场氧化物尺寸的半导体器件
公开(公告)号：US06351014B2
公开(公告)日：2002-02-26
申请号：US09519598
申请日：2000-03-06
申请人： Yasuo Inoue , Tadashi Nishimura , Yasuo Yamaguchi , Toshiaki Iwamatsu
发明人： Yasuo Inoue , Tadashi Nishimura , Yasuo Yamaguchi , Toshiaki Iwamatsu
IPC分类号： H01L2701
CPC分类号： H01L21/8238 , H01L21/84 , H01L23/4825 , H01L27/0921 , H01L27/1203 , H01L29/78609 , H01L29/78612 , H01L29/78615 , H01L29/78621 , H01L29/78645 , H01L29/78654 , H01L2924/0002 , H01L2924/00
摘要： According to a semiconductor device of the present invention, a field oxide film is formed so as to cover the main surface of an SOI layer and to reach the main surface of a buried oxide film. As a result, a pMOS active region of the SOI and an nMOS active region of the SOI can be electrically isolated completely. Therefore, latchup can be prevented completely. As a result, it is possible to provide a semiconductor device using an SOI substrate which can implement high integration by eliminating reduction of the breakdown voltage between source and drain, which was a problem of a conventional SOI field effect transistor, as well as by efficiently disposing a body contact region, which hampers high integration, and a method of manufacturing the same.
摘要翻译：根据本发明的半导体器件，形成场致氧化膜以覆盖SOI层的主表面并到达掩埋氧化膜的主表面。结果，可以完全电隔离SOI的pMOS有源区和SOI的nMOS有源区。因此，可以完全防止闭锁。结果，可以提供使用SOI衬底的半导体器件，该SOI衬底可以通过消除源极和漏极之间的击穿电压的降低来实现高集成度，这是常规SOI场效应晶体管的问题，以及有效地设置妨碍高集成度的身体接触区域及其制造方法。

25. 发明授权

US06319805B1 Semiconductor device having metal silicide film and manufacturing method thereof 失效
标题翻译：具有金属硅化物膜的半导体器件及其制造方法
公开(公告)号：US06319805B1
公开(公告)日：2001-11-20
申请号：US09499733
申请日：2000-02-08
申请人： Toshiaki Iwamatsu , Yasuo Inoue , Yasuo Yamaguchi , Tadashi Nishimura
发明人： Toshiaki Iwamatsu , Yasuo Inoue , Yasuo Yamaguchi , Tadashi Nishimura
IPC分类号： H01L213205
CPC分类号： H01L21/26506 , H01L21/26586 , H01L21/84 , H01L27/1203 , H01L29/41783 , H01L29/458 , H01L29/66507 , H01L29/66659 , H01L29/66772 , H01L29/78621
摘要： A semiconductor device in which parasitic resistance of source/drain regions can be reduced than the parasitic resistance of the drain region, and manufacturing method thereof, can be obtained. In the semiconductor device, inactivating ions are implanted only to the source region of the semiconductor layer, so as to damage the crystal near the surface of the semiconductor layer, whereby siliciding reaction is promoted. Therefore, in the source region, a titanium silicide film which is thicker can be formed.
摘要翻译：可以获得其中源极/漏极区域的寄生电阻可以比漏极区域的寄生电阻降低的半导体器件及其制造方法。在半导体装置中，仅将钝化离子注入到半导体层的源极区域，以损坏半导体层的表面附近的晶体，从而促进了硅化反应。因此，在源极区域中，可以形成更厚的硅化钛膜。

26. 发明授权

US5619053A Semiconductor device having an SOI structure 失效
标题翻译：具有SOI结构的半导体器件
公开(公告)号：US5619053A
公开(公告)日：1997-04-08
申请号：US454816
申请日：1995-05-31
申请人： Toshiaki Iwamatsu , Yasuo Inoue , Tadashi Nishimura
发明人： Toshiaki Iwamatsu , Yasuo Inoue , Tadashi Nishimura
IPC分类号： H01L27/12 , H01L27/01
CPC分类号： H01L27/1203
摘要： Generation of parasitic transistor in active layer edge is prevented, in an NMOS region of a semiconductor layer (21) on an insulating film (20), boron ions are implanted by rotary oblique injection, using a nitride film (23) and a resist (253a) as mask. In the vicinity of a region for separating element by LOCOS method, that is, only in the edge region of the semiconductor layer (21) as the active layer of NMOS transistor, boron ions are implanted by about 3.times.10.sup.13 /cm.sup.2. After LOCOS oxidation, the impurity concentration is heightened to such a level as the boron ions may not be sucked up into the oxide film.
摘要翻译：在绝缘膜（20）上的半导体层（21）的NMOS区域中，通过旋转斜射注入硼离子，使用氮化物膜（23）和抗蚀剂（...）来防止在有源层边缘中产生寄生晶体管 253a）作为掩模。在通过LOCOS方法分离元件的区域附近，即仅在作为NMOS晶体管的有源层的半导体层（21）的边缘区域中，硼离子注入约3×10 13 / cm 2。在LOCOS氧化之后，杂质浓度提高到这样的水平，因为硼离子不能被吸入氧化膜中。

27. 发明授权

US5371381A Process for producing single crystal semiconductor layer and semiconductor device produced by said process 失效
标题翻译：通过所述方法制造单晶半导体层和半导体器件的制造方法
公开(公告)号：US5371381A
公开(公告)日：1994-12-06
申请号：US587500
申请日：1990-09-24
申请人： Kazuyuki Sugahara , Tadashi Nishimura , Shigeru Kusunoki , Yasuo Inoue
发明人： Kazuyuki Sugahara , Tadashi Nishimura , Shigeru Kusunoki , Yasuo Inoue
IPC分类号： H01L21/20 , H01L21/268 , H01L21/822 , H01L29/04 , H01L27/04
CPC分类号： H01L21/8221 , H01L21/2026 , H01L21/268 , H01L29/045 , Y10S117/904 , Y10S148/09 , Y10S148/091 , Y10S148/093
摘要： Disclosed herein is a process for producing a single crystal layer of a semiconductor device, which comprises the steps of providing an oxide insulator layer separated by an opening part for seeding, on a major surface of a single crystal semiconductor substrate of the cubic system, providing a polycrystalline or amorphous semiconductor layer on the entire surface of the insulator layer inclusive of the opening part, then providing a protective layer comprising at least a reflective or anti-reflection film comprising stripes of a predetermined width, in a predetermined direction relative to the opening part and at a predetermined interval, the protective layer capable of controlling the temperature distributions in the semiconductor layer at the parts corresponding to the stripes or the parts not corresponding to the stripes, thereby completing a base for producing a semiconductor device, thereafter the surface of the base is irradiated with an energy beam through the striped reflective or anti-reflection film to melt the polycrystalline or amorphous semiconductor and scanning the energy beam in a predetermined direction such that the direction of the crystal of the semiconductor re-solidified and converted into a single crystal accords with a {111} plane, to produce the single crystal of the semiconductor device. Also disclosed is a semiconductor device produced by the method, which comprises a single crystal layer having a wide range of a crystal in a predetermined direction relative to the facial orientation of the major surface of the substrate, and has a three-dimensional semiconductor circuit element construction.
摘要翻译：本发明公开了一种制造半导体器件的单晶层的方法，其包括以下步骤：在立方晶系的单晶半导体衬底的主表面上提供由用于接种的开口部分开的氧化物绝缘体层，提供在包括开口部分的绝缘体层的整个表面上的多晶或非晶半导体层，然后提供保护层，该保护层至少包括反射膜或防反射膜，该反射膜或防反射膜包含预定宽度的条，相对于开口部分并且以预定间隔，保护层能够控制对应于条纹的部分或不对应于条纹的部分的半导体层中的温度分布，从而完成用于制造半导体器件的基底，之后，通过条纹反射照射能量束 e或抗反射膜，以熔化多晶或非晶半导体并沿预定方向扫描能量束，使得半导体晶体的方向重新固化并转换成单晶符合{111}面，至产生半导体器件的单晶。还公开了一种通过该方法制造的半导体器件，该半导体器件包括相对于衬底的主表面的面取向在预定方向上具有宽范围的晶体的单晶层，并且具有三维半导体电路元件施工。

28. 发明授权

US4993835A Apparatus for detecting three-dimensional configuration of object employing optical cutting method 失效
标题翻译：使用光学切割方法检测物体的三维构型的装置
公开(公告)号：US4993835A
公开(公告)日：1991-02-19
申请号：US424979
申请日：1989-10-23
申请人： Yasuo Inoue , Tadashi Nishimura
发明人： Yasuo Inoue , Tadashi Nishimura
IPC分类号： G01B11/24 , G01B11/25
CPC分类号： G01B11/25
摘要： Disclosed is an apparatus for detecting the three-dimensional configuration of an object employing an optical cutting method. A light projector pulse-flashes slit-shaped light and causes the light to scan an object at a predetermined speed. An image sensor having a plurality of pixels is disposed in opposition to the object. An optical system forms on the image sensor an image of an optical cutting line formed on the surface of the object by the light. A difference detector detects the difference between the on- and off- levels of each of pulses of the image detected by the pixels of the sensor. A time calculator calculates the time at which the image has passed each of the pixels, on the basis of the difference detected by the difference detector. A configuration calculator calculates the three-dimensional configuration of the object on the basis of the calculated passage time and the scanning speed of the slit-shaped light. Since the difference between the levels of each pulse of the image is obtained, any optical signals resulting from a factor other than the pertinent pulses, such as influence by the background of the object, or a flash can be excluded, and the configuration can be detected with a high level of precision.
摘要翻译：公开了一种使用光学切割方法检测物体的三维构造的装置。光投射器脉冲闪烁狭缝状光，并使光以预定速度扫描物体。具有多个像素的图像传感器设置成与物体相对。光学系统在图像传感器上形成通过光形成在物体表面上的光学切割线的图像。差分检测器检测由传感器的像素检测的图像的每个脉冲的开和关电平之间的差异。时间计算器基于由差分检测器检测到的差异来计算图像已经通过每个像素的时间。配置计算器基于所计算的通过时间和狭缝状光的扫描速度来计算物体的三维配置。由于获得图像的每个脉冲的电平之间的差异，所以可以排除由诸如对象的背景或闪光的相关脉冲之外的因素产生的任何光信号，并且可以将配置以高精度检测。

29. 发明授权

US4822751A Method of producing a thin film semiconductor device 失效
标题翻译：薄膜半导体器件的制造方法
公开(公告)号：US4822751A
公开(公告)日：1989-04-18
申请号：US30904
申请日：1987-03-31
申请人： Akira Ishizu , Tadashi Nishimura , Yasuo Inoue
发明人： Akira Ishizu , Tadashi Nishimura , Yasuo Inoue
IPC分类号： H01L27/12 , H01L21/20 , H01L21/205 , H01L21/263 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786 , H01L21/268
CPC分类号： H01L21/0262 , H01L21/0242 , H01L21/02491 , H01L21/02532 , H01L21/02639 , H01L27/1214 , H01L29/66757 , H01L29/78633 , Y10S148/091 , Y10S148/093
摘要： A thin film semiconductor device is formed by preparing a substrate, forming a pattern of metal thin film on the substrate, forming an insulating layer on the metal thin film, and forming a pattern of a semiconductor thin film active layer, which is self-aligned to the pattern of the metal thin film, by laser CVD.
摘要翻译：通过准备基板来形成薄膜半导体器件，在基板上形成金属薄膜图案，在金属薄膜上形成绝缘层，并形成自对准的半导体薄膜有源层的图案通过激光CVD到金属薄膜的图案。

30. 发明授权

US4787740A Apparatus and method for determining crystal orientation 失效
标题翻译：用于确定晶体取向的装置和方法
公开(公告)号：US4787740A
公开(公告)日：1988-11-29
申请号：US11329
申请日：1987-02-05
申请人： Yasuo Inoue , Tadashi Nishimura , Kazuyuki Sugahara , Shigeru Kusunoki
发明人： Yasuo Inoue , Tadashi Nishimura , Kazuyuki Sugahara , Shigeru Kusunoki
IPC分类号： H01L21/66 , G01N21/00 , G01N21/21 , G01N21/65 , G01N21/84
CPC分类号： G01N21/65 , G01N2021/656 , G01N2021/8477 , G01N21/21 , G01N21/658
摘要： An apparatus for determining crystal orientation comprises: a polarizer for polarizing an incident light beam; a polarization analyzer for selecting light having a selected polarization direction in Raman scattered light; and a synchronizer for enabling synchronous rotations of the polarizer and the polarization analyzer.
摘要翻译：一种用于确定晶体取向的装置包括：用于偏振入射光束的偏振器; 偏振分析器，用于选择拉曼散射光中具有所选偏振方向的光; 以及用于实现偏振器和偏振分析器的同步旋转的同步器。

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