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21. 发明授权

US08852760B2 Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer 有权
标题翻译：通过插入硼粉尘层，磁性器件应用具有高热稳定性的自由层
公开(公告)号：US08852760B2
公开(公告)日：2014-10-07
申请号：US13448557
申请日：2012-04-17
申请人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
发明人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
IPC分类号： H01L29/82 , G01R33/09 , G11B5/39
CPC分类号： G01R33/091 , G11B5/3906 , H01F10/123 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1143
摘要： A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.
摘要翻译：在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能。每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或随后在400℃或更高温度下退火。自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

22. 发明授权

US08786036B2 Magnetic tunnel junction for MRAM applications 有权
标题翻译：用于MRAM应用的磁隧道结
公开(公告)号：US08786036B2
公开(公告)日：2014-07-22
申请号：US12930877
申请日：2011-01-19
申请人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
发明人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
IPC分类号： H01L43/10 , H01L27/22
CPC分类号： H01L43/10 , G11C11/161 , H01L27/222 , H01L43/00 , H01L43/02 , H01L43/08
摘要： A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous NiFeX layer for improved bit switching performance. The crystalline layer is Fe, Ni, or FEB with a thickness of at least 6 Angstroms which affords a high magnetoresistive ratio. The X element in the NiFeX layer is Mg, Hf, Zr, Nb, or Ta with a content of 5 to 30 atomic % NiFeX thickness is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. In an alternative embodiments, the crystalline layer may be a Fe/NiFe bilayer. Optionally, the amorphous layer may have a NiFeM1/NiFeM2 configuration where M1 and M2 are Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. Annealing at 300° C. to 360° C. provides a high magnetoresistive ratio of about 150%.
摘要翻译：公开了具有接触隧道势垒的较低结晶层和上部非晶NiFeX层的复合自由层的MRAM阵列中的MTJ，用于改善位切换性能。结晶层是厚度至少为6埃的Fe，Ni或FEB，其具有高的磁阻比。 NiFeX层中的X元素为含有5〜30原子％NiFeX厚度的Mg，Hf，Zr，Nb或Ta优选为20〜40埃，以显着降低位线切换电流和短路位数。在替代实施例中，结晶层可以是Fe / NiFe双层。可选地，非晶层可以具有其中M1和M2是Mg，Hf，Zr，Nb或Ta的NiFeM1 / NiFeM2构型，M1不等于M2。在300℃至360℃退火，提供约150％的高磁阻比。

23. 发明申请

US20140077318A1 Storage Element for STT MRAM Applications 有权
标题翻译： STT MRAM应用的存储元件
公开(公告)号：US20140077318A1
公开(公告)日：2014-03-20
申请号：US13617432
申请日：2012-09-14
申请人： Witold Kula , Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
发明人： Witold Kula , Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.
摘要翻译：描述了改进的PMA STT MTJ存储元件及其形成方法。通过在存储层和盖层之间插入合适的氧化物层，获得改进的PMA性质，增加更大的Eb / kT热因子的可能性以及较大的MR。另一个重要的优点是更好的与高处理温度的兼容性，有可能促进与CMOS的集成。

24. 发明授权

US08609262B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权
标题翻译：用于制造自旋转矩（STT）-RAM应用的高性能MTJ装置的结构和方法
公开(公告)号：US08609262B2
公开(公告)日：2013-12-17
申请号：US12460412
申请日：2009-07-17
申请人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
发明人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
IPC分类号： G11B5/706 , H01L43/08 , H01L29/82 , G01R33/09 , G11C11/16
CPC分类号： H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

25. 发明授权

US08592927B2 Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications 有权
标题翻译：具有减少的垂直退磁场的多层使用瞬时应用的时间稀释
公开(公告)号：US08592927B2
公开(公告)日：2013-11-26
申请号：US13068172
申请日：2011-05-04
申请人： Guenole Jan , Ru Ying Tong , Witold Kula
发明人： Guenole Jan , Ru Ying Tong , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.
摘要翻译：公开了具有FM1 /力矩稀释/ FM2配置的复合自由层的磁性元件，其中FM1和FM2是由Co，Fe，Ni和B中的一种或多种构成的磁性层，并且力矩稀释层用于减少垂直退磁场。结果，当垂直表面各向异性支配形状各向异性以产生垂直于FM1，FM2层的平面的磁化时，实现较低的电阻x面积乘积和较高的热稳定性。瞬时稀释层可以是非磁性金属如Ta或具有掺杂的非磁性金属的CoFe合金。垂直Hk增强层与FM2层接合，并且可以是氧化物以增加FM2层中的垂直各向异性场。磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

26. 发明授权

US08541855B2 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications 有权
标题翻译： Co / Ni多层膜，具有改进的磁性器件应用的面外各向异性
公开(公告)号：US08541855B2
公开(公告)日：2013-09-24
申请号：US13068398
申请日：2011-05-10
申请人： Guenole Jan , Witold Kula , Ru Ying Tong , Yu Jen Wang
发明人： Guenole Jan , Witold Kula , Ru Ying Tong , Yu Jen Wang
IPC分类号： H01L29/82 , H01L43/00 , H01L23/552 , H01L29/34 , H01L29/74 , H01L31/111
CPC分类号： H01L43/10 , G01R33/098 , G01R33/1284 , G11B5/1278 , G11B5/3909 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / Ni）n组合物等在上层叠层中提高垂直磁各向异性（PMA），其中n为2至30.种子层优选为NiCr，NiFeCr，Hf，或其复合物，厚度为10〜100埃。此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。叠层可以用作MTJ中的参考层，偶极子层或自由层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

27. 发明申请

US20130230741A1 High Thermal Stability Free Layer with High Out-of-Plane Anisotropy for Magnetic Device Applications 有权
标题翻译：具有高非平面各向异性的磁性器件应用的高热稳定性自由层
公开(公告)号：US20130230741A1
公开(公告)日：2013-09-05
申请号：US13409456
申请日：2012-03-01
申请人： Yu-Jen Wang , Witold Kula , Guenole Jan
发明人： Yu-Jen Wang , Witold Kula , Guenole Jan
IPC分类号： G11B5/64 , G11B5/84
CPC分类号： G01R33/098 , G11B5/82 , G11C11/161 , H01F10/123 , H01F10/16 , H01F10/3231 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1143
摘要： A CoFeB or CoFeNiB magnetic layer wherein the boron content is 25 to 40 atomic % and with a thickness
摘要翻译：使用硼含量为25〜40原子％并且厚度<20埃的CoFeB或CoFeNiB磁性层来实现磁性器件中的高垂直磁各向异性和增强的热稳定性。将Co，Ni，Fe或其合金制成的除尘层添加到CoFeB层的顶表面和底表面，以增加磁阻以及改善Hc和Hk。另一实施例包括在CoFeB自由层中的非磁性金属插入。具有升高的B含量的CoFeB层可以作为自由层偶极层或参考层并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。热稳定性增加，使得在退火至至少400℃1小时后保留大量的Hk。实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

28. 发明申请

US20120028373A1 Bi-layer hard mask for the patterning and etching of nanometer size MRAM devices 有权
标题翻译：用于纳米尺寸MRAM器件的图案化和蚀刻的双层硬掩模
公开(公告)号：US20120028373A1
公开(公告)日：2012-02-02
申请号：US12804840
申请日：2010-07-30
申请人： Rodolfo Belen , Rongfu Xiao , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
发明人： Rodolfo Belen , Rongfu Xiao , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
IPC分类号： H01L43/12 , B32B5/00 , B32B7/02 , B32B15/04
CPC分类号： H01L43/12 , Y10T428/12535 , Y10T428/24975 , Y10T428/266 , Y10T428/31504 , Y10T428/31678
摘要： A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-magnetic spacer, a middle conductive layer, and an upper sacrificial dielectric layer. The non-magnetic spacer serves as an etch stop during a pattern transfer with fluorocarbon plasma through the conductive layer. A photoresist pattern is transferred through the dielectric layer with a first fluorocarbon etch. Then the photoresist is removed and a second fluorocarbon etch transfers the pattern through the conductive layer. The dielectric layer protects the top surface of the conductive layer during the second fluorocarbon etch and during a substantial portion of a third RIE step with a gas comprised of C, H, and O that transfers the pattern through the underlying MTJ layers.
摘要翻译：公开了一种复合硬掩模，其防止在限定MTJ形状的蚀刻工艺期间在MRAM器件中积累金属蚀刻残留物。结果，MTJ形状完整性得到显着提高。硬掩模具有较低的非磁性间隔物，中间导电层和上部牺牲介电层。在通过导电层的氟碳等离子体的图案转印期间，非磁性间隔物用作蚀刻停止层。光致抗蚀剂图案通过第一氟碳蚀刻转移通过电介质层。然后去除光致抗蚀剂，并且第二氟碳蚀刻将图案转移通过导电层。介电层在第二次氟碳蚀刻期间保护导电层的顶表面，并在第三次RIE步骤的大部分期间保护由C，H和O组成的气体，以将图案转移通过下面的MTJ层。

29. 发明授权

US07863060B2 Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices 有权
标题翻译：双重图案化和蚀刻用于自旋转移转矩MRAM器件的磁性隧道结结构的方法
公开(公告)号：US07863060B2
公开(公告)日：2011-01-04
申请号：US12383298
申请日：2009-03-23
申请人： Rodolfo Belen , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
发明人： Rodolfo Belen , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , H01L43/12
摘要： A method for forming a MTJ in a STT-MRAM is disclosed in which the easy-axis CD is determined independently of the hard-axis CD. One approach involves two photolithography steps each followed by two plasma etch steps to form a post in a hard mask which is transferred through a MTJ stack of layers. The hard mask has an upper Ta layer with a thickness of 300 to 400 Angstroms and a lower NiCr layer less than 50 Angstroms thick. The upper Ta layer is etched with a fluorocarbon etch while lower NiCr layer and underlying MTJ layers are etched with a CH3OH. Preferably, a photoresist mask layer is removed by oxygen plasma between the fluorocarbon and CH3OH plasma etches. A lower hard mask layer made of NiCr or the like is inserted to prevent formation and buildup of Ta etch residues that can cause device shunting.
摘要翻译：公开了一种用于在STT-MRAM中形成MTJ的方法，其中容易轴CD独立于硬轴CD来确定。一种方法涉及两个光刻步骤，每个步骤分别采用两个等离子体蚀刻步骤，以在通过MTJ堆叠层传送的硬掩模中形成柱。硬掩模具有厚度为300至400埃的上层Ta层和小于50埃厚的较低NiCr层。用氟碳蚀刻蚀刻上层Ta层，同时用CH3OH蚀刻下层NiCr层和下层MTJ层。优选地，在碳氟化合物和CH 3 OH等离子蚀刻之间的氧等离子体去除光致抗蚀剂掩模层。插入由NiCr等制成的下部硬掩模层以防止可能导致器件分流的Ta蚀刻残留物的形成和积累。

30. 发明授权

US07838436B2 Bottom electrode for MRAM device and method to fabricate it 有权
标题翻译：用于MRAM设备的底电极及其制造方法
公开(公告)号：US07838436B2
公开(公告)日：2010-11-23
申请号：US11528877
申请日：2006-09-28
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain etchants. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”. Thus, said included layer of ruthenium may be used as an etch stop layer during the etching of Ta and/or TaN while the latter materials may be used to form a hard mask for etching the ruthenium without significant corrosion of the silicon nitride surface.
摘要翻译：通过在氮化硅表面附近包括一层钌来促进在氮化硅衬底上形成用于MTJ器件的底部电极。钌是良好的电导体，并且它对Ta和TaN的反应与某些蚀刻剂不同。通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。因此，所述包含的钌层可以在蚀刻Ta和/或TaN期间用作蚀刻停止层，而后者可用于形成用于蚀刻钌的硬掩模，而不会对氮化硅表面产生显着的腐蚀。

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