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21. 发明授权

US08748899B2 Nitride-based semiconductor device and method for fabricating the same 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US08748899B2
公开(公告)日：2014-06-10
申请号：US13447368
申请日：2012-04-16
申请人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
发明人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
IPC分类号： H01L29/778 , H01L33/32 , H01L29/78
CPC分类号： H01L33/32 , H01L33/16 , H01L33/40 , H01L2224/14 , H01L2224/16225 , H01L2924/181 , Y10T436/112499 , H01L2924/00012
摘要： A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structure 20 with a p-type semiconductor region, of which the surface 12 defines a tilt angle of one to five degrees with respect to an m plane, and an electrode 30, which is arranged on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x≧0, y≧0 and z≧0) semiconductor layer 26. The electrode 30 includes an Mg layer 32, which is in contact with the surface 12 of the p-type semiconductor region, and a metal layer 34 formed on the Mg layer 32. The metal layer 34 is formed from at least one metallic element that is selected from the group consisting of Pt, Mo and Pd.
摘要翻译：根据本公开的氮化物基半导体器件包括具有p型半导体区域的氮化物基半导体多层结构20，其表面12相对于m平面限定1至5度的倾斜角，以及布置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）半导体层26制成。电极30包括Mg层32，其接触与p型半导体区域的表面12以及形成在Mg层32上的金属层34.金属层34由选自Pt，Mo和Pd中的至少一种金属元素形成。

22. 发明授权

US09252330B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US09252330B2
公开(公告)日：2016-02-02
申请号：US13813792
申请日：2011-08-05
申请人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
IPC分类号： H01L33/32 , H01L33/16 , H01L33/20 , H01L33/00
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.
摘要翻译：根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型氮化物半导体层和p型氮化物半导体层之间的有源层区域22; 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有大致平行于m面氮化物半导体层的a轴方向延伸的多个突起。

23. 发明申请

US20130126901A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：半导体发光元件
公开(公告)号：US20130126901A1
公开(公告)日：2013-05-23
申请号：US13813777
申请日：2011-08-05
申请人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m-plane nitride semiconductor layer and which is interposed between the n- and p-type nitride semiconductor layers; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run in a direction that defines either an angle of 5 degrees to 80 degrees or an angle of −80 degrees to −5 degrees with respect to the a-axis direction of the m-plane nitride semiconductor layer.
摘要翻译：根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型和p型氮化物半导体层之间的有源层区22。与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有多个突起，该多个突起在限定5度至80度的角度或-80度至-5度的角度的方向上延伸，相对于相对于m面氮化物半导体层的a轴方向。

24. 发明申请

US20130126902A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：半导体发光元件
公开(公告)号：US20130126902A1
公开(公告)日：2013-05-23
申请号：US13813792
申请日：2011-08-05
申请人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.
摘要翻译：根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型氮化物半导体层和p型氮化物半导体层之间的有源层区域22; 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有大致平行于m面氮化物半导体层的a轴方向延伸的多个突起。

25. 发明授权

US08306085B2 Nitride compound semiconductor element and method for manufacturing same 有权
标题翻译：氮化物半导体元件及其制造方法
公开(公告)号：US08306085B2
公开(公告)日：2012-11-06
申请号：US13234326
申请日：2011-09-16
申请人： Yoshiaki Hasegawa , Toshiya Yokogawa , Atsushi Yamada , Yoshiaki Matsuda
发明人： Yoshiaki Hasegawa , Toshiya Yokogawa , Atsushi Yamada , Yoshiaki Matsuda
IPC分类号： H01S5/10
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/78 , H01L33/0095 , H01S5/0202 , H01S5/22 , H01S5/2201 , Y10S148/028
摘要： The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.
摘要翻译：本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。首先，设置分割成各个基板的晶片1。构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。因此，可以以良好的产率进行裂解。

26. 发明授权

US07622749B2 Semiconductor light-emitting element and method for fabricating the same 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US07622749B2
公开(公告)日：2009-11-24
申请号：US11972844
申请日：2008-01-11
申请人： Yoshiaki Hasegawa , Toshiya Yokogawa , Atsushi Yamada
发明人： Yoshiaki Hasegawa , Toshiya Yokogawa , Atsushi Yamada
IPC分类号： H01L29/207
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/2201 , H01S5/2206 , H01S5/2216 , H01S5/2231 , H01S5/305 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.
摘要翻译：根据本发明的制造半导体发光元件的方法包括以下步骤：（A）在第一III-V族化合物半导体上提供条纹掩模层，（B）选择性地生长第二III-V族化合物半导体在除了被掩模层覆盖的部分之外的第一III-V族化合物半导体的整个表面上，由此形成具有由掩模层限定的条纹开口的电流限制层，（C）选择性地去除掩模层，和 D）生长第三组III-V族化合物半导体以覆盖通过条纹开口暴露的第一III-V族化合物半导体的表面和电流限制层的表面。

27. 发明授权

US08268706B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08268706B2
公开(公告)日：2012-09-18
申请号：US13061544
申请日：2009-07-29
申请人： Ryou Kato , Masaki Fujikane , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Ryou Kato , Masaki Fujikane , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
IPC分类号： H01L21/203
CPC分类号： H01L21/0254 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L33/007 , H01L33/0095 , H01L33/16 , H01L33/32
摘要： A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step S13); and cooling the p-type gallium nitride-based compound semiconductor layer (Step S14) after the step of growing has been carried out. The step of growing includes supplying hydrogen gas to a reaction chamber in which the p-type gallium nitride-based compound semiconductor layer is grown. The step of cooling includes cooling the p-type gallium nitride-based compound semiconductor layer with the supply of the hydrogen gas to the reaction chamber cut off.
摘要翻译：根据本发明的制造半导体器件的方法包括以下步骤：通过在加热的气氛中进行金属有机化学气相沉积工艺来生长p型氮化镓基化合物半导体层，使得晶体生长面半导体层为m面（步骤S13）。并且在生长步骤之后冷却p型氮化镓基化合物半导体层（步骤S14）。生长步骤包括向生长p型氮化镓系化合物半导体层的反应室供给氢气。冷却步骤包括：将氢气供给到反应室切断时，冷却p型氮化镓系化合物半导体层。

28. 发明申请

US20110159667A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20110159667A1
公开(公告)日：2011-06-30
申请号：US13061544
申请日：2009-07-29
申请人： Ryou Kato , Masaki Fujikane , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Ryou Kato , Masaki Fujikane , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
IPC分类号： H01L21/203
CPC分类号： H01L21/0254 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L33/007 , H01L33/0095 , H01L33/16 , H01L33/32
摘要： A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step S13); and cooling the p-type gallium nitride-based compound semiconductor layer (Step S14) after the step of growing has been carried out. The step of growing includes supplying hydrogen gas to a reaction chamber in which the p-type gallium nitride-based compound semiconductor layer is grown. The step of cooling includes cooling the p-type gallium nitride-based compound semiconductor layer with the supply of the hydrogen gas to the reaction chamber cut off.
摘要翻译：根据本发明的制造半导体器件的方法包括以下步骤：通过在加热的气氛中进行金属有机化学气相沉积工艺来生长p型氮化镓基化合物半导体层，使得晶体生长面半导体层为m面（步骤S13）。并且在生长步骤之后冷却p型氮化镓基化合物半导体层（步骤S14）。生长步骤包括向生长p型氮化镓系化合物半导体层的反应室供给氢气。冷却步骤包括：将氢气供给到反应室切断时，冷却p型氮化镓系化合物半导体层。

29. 发明申请

US20080116479A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20080116479A1
公开(公告)日：2008-05-22
申请号：US11972844
申请日：2008-01-11
申请人： Yoshiaki HASEGAWA , Toshiya Yokogawa , Atsushi Yamada
发明人： Yoshiaki HASEGAWA , Toshiya Yokogawa , Atsushi Yamada
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/2201 , H01S5/2206 , H01S5/2216 , H01S5/2231 , H01S5/305 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.
摘要翻译：根据本发明的制造半导体发光元件的方法包括以下步骤：（A）在第一III-V族化合物半导体上提供条纹掩模层，（B）选择性地生长第二III-V族化合物半导体在除了被掩模层覆盖的部分之外的第一III-V族化合物半导体的整个表面上，由此形成具有由掩模层限定的条纹开口的电流限制层，（C）选择性地去除掩模层，和 D）生长第三组III-V族化合物半导体以覆盖通过条纹开口暴露的第一III-V族化合物半导体的表面和电流限制层的表面。

30. 发明授权

US06855571B1 Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor 失效
标题翻译：制造GaN基半导体激光器件的方法和用于其的半导体衬底
公开(公告)号：US06855571B1
公开(公告)日：2005-02-15
申请号：US10366722
申请日：2003-02-14
申请人： Gaku Sugahara , Atsushi Yamada , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Gaku Sugahara , Atsushi Yamada , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L21/00 , H01L21/20 , H01L33/00 , H01S5/02 , H01S5/22 , H01S5/223 , H01S5/343
CPC分类号： B82Y20/00 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/005 , H01S5/0213 , H01S5/0655 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S2304/00 , H01S2304/12
摘要： The present invention provides a method for fabricating a GaN-based semiconductor laser device comprising the steps of forming a GaN-based semiconductor layer 102 on a substrate 101; forming, on the surface of the first GaN-based semiconductor layer, a mask layer 103 that comprises a striped pattern composed of a plurality of band-like portions 103a that are regularly arranged in the width direction and an alignment pattern formed by altering the regularity of some portion of the plurality of band-like portions 103a; depositing a second GaN-based semiconductor layer 104 on the mask layer 103 by the selective lateral growth method with starting points at portions of the first GaN-based semiconductor layer 104 that are exposed from the mask layer 103; forming a multi-layered semiconductor that comprises an n-type GaN-based semiconductor layers 105 to 107, an active layer 108, and a p-type GaN-based semiconductor layers 109 to 111 on the second GaN-based semiconductor layer 104; and forming a current injection region 112 directly above the band-like portion 103a while using the alignment pattern as a reference to position the current injection region.
摘要翻译：本发明提供一种制造GaN基半导体激光器件的方法，包括以下步骤：在衬底101上形成GaN基半导体层102; 在第一GaN基半导体层的表面上形成掩模层103，掩模层103包括由在宽度方向上规则排列的多个带状部分103a组成的条纹图案和通过改变规则性而形成的取向图案多个带状部分103a的一些部分; 通过选择性横向生长方法在从掩模层103暴露的第一GaN基半导体层104的部分处的起始点，在掩模层103上沉积第二GaN基半导体层104; 形成包含在第二GaN基半导体层104上的n型GaN基半导体层105至107，有源层108和p型GaN基半导体层109至111的多层半导体; 并且在使用对准图案作为基准的同时，在带状部分103a的正上方形成电流注入区域112来定位电流注入区域。

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