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21. 发明申请

US20190096658A1 MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS 审中-公开
公开(公告)号：US20190096658A1
公开(公告)日：2019-03-28
申请号：US16202745
申请日：2018-11-28
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuhide HASEBE , Shigeru NAKAJIMA , Jun OGAWA , Hiroki MURAKAMI
IPC分类号： H01L21/027 , H01L21/02 , H01L21/033 , C23C16/02 , C23C16/40 , H01L21/3213 , G03F7/40 , H01L21/311 , C23C16/455 , H01L21/768
摘要： In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

22. 发明申请

US20180358235A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180358235A1
公开(公告)日：2018-12-13
申请号：US16002081
申请日：2018-06-07
申请人： TOKYO ELECTRON LIMITED
发明人： Hideomi HANE , Kentaro OSHIMO , Shimon OTSUKI , Jun OGAWA , Noriaki FUKIAGE , Hiroaki IKEGAWA , Yasuo KOBAYASHI , Takeshi OYAMA
IPC分类号： H01L21/3213 , H01L21/02 , H01J37/32
CPC分类号： H01L21/32139 , H01J37/32449 , H01J37/32715 , H01J37/32834 , H01J2237/334 , H01L21/0217 , H01L21/022 , H01L21/02252 , H01L21/32136
摘要： There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.

23. 发明申请

US20170278698A1 Semiconductor Device Manufacturing Method and Semiconductor Device Manufacturing System 审中-公开
公开(公告)号：US20170278698A1
公开(公告)日：2017-09-28
申请号：US15465144
申请日：2017-03-21
申请人： TOKYO ELECTRON LIMITED
发明人： Hiroaki IKEGAWA , Jun OGAWA
IPC分类号： H01L21/02 , H01L21/67 , C23C16/34 , C23C16/52 , C23C16/56 , H01L21/311 , C23C16/455
CPC分类号： H01L21/0228 , C23C16/0236 , C23C16/045 , C23C16/345 , C23C16/45536 , C23C16/4554 , C23C16/45544 , C23C16/52 , C23C16/56 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/31111 , H01L21/31116 , H01L21/67069 , H01L21/67745 , H01L21/68771
摘要： A semiconductor device manufacturing method includes: a primary process of supplying a process gas to a substrate having a depression formed therein to form a third layer and filling the depression with the third layer, the substrate including a first layer whose surface is exposed as an upper surface of the substrate and a second layer formed in at least a sidewall of the depression having the sidewall and a floor surface; performing an etching process of etching the third layer to expose the upper surface, and halting the etching of the third layer while remaining the third layer formed within the depression; and performing a secondary process of supplying the process gas to the substrate to form the third layer so that the depression is filled with the third layer with no clearance.

24. 发明申请

US20170271143A1 Film Forming Method and Film Forming Apparatus 审中-公开
公开(公告)号：US20170271143A1
公开(公告)日：2017-09-21
申请号：US15459441
申请日：2017-03-15
申请人： TOKYO ELECTRON LIMITED
发明人： Noriaki FUKIAGE , Takayuki KARAKAWA , Toyohiro KAMADA , Akihiro KURIBAYASHI , Takeshi OYAMA , Jun OGAWA , Kentaro OSHIMO , Shimon OTSUKI , Hideomi HANE
IPC分类号： H01L21/02 , C23C16/52 , C23C16/455
摘要： A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

25. 发明申请

US20170186606A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 有权
公开(公告)号：US20170186606A1
公开(公告)日：2017-06-29
申请号：US15379526
申请日：2016-12-15
申请人： TOKYO ELECTRON LIMITED
发明人： Noriaki FUKIAGE , Takayuki KARAKAWA , Akihiro KURIBAYASHI , Jun OGAWA
IPC分类号： H01L21/02 , H01L21/687 , C23C16/455 , C23C16/02 , C23C16/34
CPC分类号： H01L21/02274 , C23C16/0209 , C23C16/345 , C23C16/4412 , C23C16/45542 , C23C16/45544 , C23C16/45551 , C23C16/45563 , H01L21/0217 , H01L21/02211 , H01L21/0228 , H01L21/68764 , H01L21/68771
摘要： A film forming method for forming a silicon nitride film on a substrate within a vacuum container includes a first process of supplying a gas of a silicon raw material to the substrate to cause the silicon raw material gas to be adsorbed onto the substrate, a second process of subsequently supplying an ammonia gas to the substrate in a non-plasma-converted state to cause the ammonia gas to be physically adsorbed onto the substrate, a third process of subsequently forming a reaction product layer by supplying active species obtained by plasma-converting a plasma-forming gas for forming plasma to the substrate, thereby causing ammonia physically adsorbed onto the substrate to react with the silicon raw material, and forming the silicon nitride film by depositing the reaction product layer by repeating multiple times a cycle including the first process, the second process and the third process.

26. 发明申请

US20140179121A1 METHOD OF DEPOSITING A FILM 有权
标题翻译：沉积膜的方法
公开(公告)号：US20140179121A1
公开(公告)日：2014-06-26
申请号：US14108663
申请日：2013-12-17
申请人： Tokyo Electron Limited
发明人： Hiroaki IKEGAWA , Masahiko KAMINISHI , Kosuke TAKAHASHI , Masato KOAKUTSU , Jun OGAWA
IPC分类号： H01L21/02 , H01L21/687
CPC分类号： H01L21/0228 , C23C16/45551 , C23C16/4584 , H01L21/02148 , H01L21/02164 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/68764 , H01L21/68771
摘要： A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.
摘要翻译：一种使用包括转台安装基板的设备在基板上沉积薄膜的方法，设置有气体供应部分的转盘上表面上方的第一和第二处理区域，在第一和第二处理区域之间的分离气体供应部分和分离区域，包括通过旋转转盘第一匝来沉积第一氧化物膜，同时供应第一反应气体，来自第二气体供应部分的氧化气体和分离气体; 在从第一气体供给部分和分离气体供应部分供应分离气体的同时旋转至少一圈，并且来自第二气体供应部分的氧化气体; 并且至少第二匝旋转以沉积第二氧化物膜，同时从第一气体供应部分提供第二反应气体，来自第二气体供应部分的氧化气体和分离气体。

27. 发明公开

US20240096595A1 FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING 审中-公开
公开(公告)号：US20240096595A1
公开(公告)日：2024-03-21
申请号：US18524767
申请日：2023-11-30
申请人： Tokyo Electron Limited
发明人： Kazuhide HASEBE , Shigeru NAKAJIMA , Jun OGAWA , Hiroki MURAKAMI
IPC分类号： H01J37/32 , C23C16/02 , C23C16/40 , C23C16/455 , G03F7/40 , H01L21/02 , H01L21/027 , H01L21/033 , H01L21/311 , H01L21/3213 , H01L21/768
CPC分类号： H01J37/32091 , C23C16/02 , C23C16/402 , C23C16/403 , C23C16/45536 , G03F7/40 , H01J37/3244 , H01J37/32834 , H01L21/02164 , H01L21/02178 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/027 , H01L21/0274 , H01L21/0337 , H01L21/0338 , H01L21/31138 , H01L21/31144 , H01L21/32139 , H01L21/76816
摘要： In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

28. 发明公开

US20230395368A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20230395368A1
公开(公告)日：2023-12-07
申请号：US18316692
申请日：2023-05-12
申请人： Tokyo Electron Limited
发明人： Kazumasa IGARASHI , Yamato TONEGAWA , Jun OGAWA , Yuki TANAKA
IPC分类号： H01L21/02 , H01L21/311
CPC分类号： H01L21/0214 , H01L21/02233 , H01L21/31116
摘要： A substrate processing method includes preparing a substrate having a target film including silicon, carbon, and nitrogen on a surface of the substrate; supplying hydrogen gas and oxygen gas to the target film to oxidize a surface layer of the target film and form an oxide film; and etching the oxide film.

29. 发明申请

US20210095375A1 FILM FORMING APPARATUS AND METHOD OF OPERATING FILM FORMING APPARATUS 有权
公开(公告)号：US20210095375A1
公开(公告)日：2021-04-01
申请号：US17027409
申请日：2020-09-21
申请人： Tokyo Electron Limited
发明人： Jun OGAWA , Hiroyuki WADA
IPC分类号： C23C16/455 , C23C16/458 , C23C16/34 , C23C16/44 , C23C16/52 , C23C16/452
摘要： A film forming apparatus sequentially supplies a raw material gas of a compound containing chlorine and an element other than the chlorine, and a first reaction to form a fil. The film forming apparatus includes a rotary table, a raw material gas ejection port configured to eject the raw material gas to a first region, a reaction gas supply part configured to supply, to a second region, a first reaction gas and a second reaction gas that reacts with chlorine to generate a third reaction product, in order to prevent a second reaction product from being generated due to a reaction of the chlorine remaining in the vacuum container with air when performing the opening-to-air. The film forming apparatus further includes an atmosphere separation part, a first exhaust port and a second exhaust port, and a controller.

30. 发明申请

US20210057207A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 有权
公开(公告)号：US20210057207A1
公开(公告)日：2021-02-25
申请号：US16992541
申请日：2020-08-13
申请人： Tokyo Electron Limited
发明人： Jun OGAWA , Noriaki FUKIAGE
IPC分类号： H01L21/02 , C23C16/458 , C23C16/34 , C23C16/455 , C23C16/52
摘要： A film forming method includes: rotating a rotary table to revolve a substrate which is placed on the rotary table and has a recess in its surface; supplying a raw material gas to a first region on the rotary table; supplying an ammonia gas to a second region on the rotary table; forming a first SiN film in the recess by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a first flow rate, while the rotary table rotates at a first rotation speed; and forming a second SiN film in the recess such that the second SiN film is laminated on the first SiN film by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a second flow rate, while the rotary table rotates at a second rotation speed.

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