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    • 28. 发明申请
    • Array Substrate And Method For Fabricating The Same
    • 阵列基板及其制造方法
    • US20140070239A1
    • 2014-03-13
    • US13995122
    • 2012-11-07
    • Jing YangJianshe XueXiang Liu
    • Jing YangJianshe XueXiang Liu
    • H01L33/08
    • H01L33/08G02F1/1362H01L27/1288
    • An array substrate and a method for fabricating the same are disclosed. The method for fabricating the array substrate comprises: forming a pattern of a gate electrode (2) and a common electrode (3) on a substrate (1); forming a pattern of a gate insulating layer (4), an active layer (5), a source/drain electrode layer (6) and a first passivation layer (7), wherein the first passivation layer (7) has a via hole and a thin film transistor (TFT) channel window, and the TFT channel window is located above the gate electrode (2); forming a TFT channel and a pixel electrode (9) with slits, wherein the pixel electrode (9) is connected to one of the source/drain electrode (6) through the via hole. The method is not only simple and stable but also improves the TFT quality.
    • 公开了阵列基板及其制造方法。 制造阵列基板的方法包括:在基板(1)上形成栅极(2)和公共电极(3)的图案; 形成栅极绝缘层(4),有源层(5),源/漏电极层(6)和第一钝化层(7)的图案,其中第一钝化层(7)具有通孔和 薄膜晶体管(TFT)沟道窗口,TFT沟道窗口位于栅电极(2)的上方; 形成具有狭缝的TFT沟道和像素电极(9),其中,所述像素电极(9)通过所述通孔与所述源极/漏极电极(6)中的一个连接。 该方法不仅简单稳定,而且提高了TFT的质量。