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21. 发明授权

US08499361B2 Prototyping station for atomic force microscope-assisted deposition of nanostructures 有权
公开(公告)号：US08499361B2
公开(公告)日：2013-07-30
申请号：US13548845
申请日：2012-07-13
申请人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrel Iancu , Wonyoung Lee
发明人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrel Iancu , Wonyoung Lee
IPC分类号： H01J37/06
CPC分类号： C23C16/047 , G01Q30/02
摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

22. 发明申请

US20120313589A1 Energy storage device with large charge separation 有权
标题翻译：储能装置具有较大的电荷分离
公开(公告)号：US20120313589A1
公开(公告)日：2012-12-13
申请号：US13135798
申请日：2011-07-13
申请人： Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu
发明人： Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu
IPC分类号： H01M10/36 , H02J7/00
CPC分类号： H01L29/92 , H01G7/06 , H01L33/0008 , Y02T10/7022
摘要： High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.
摘要翻译：提供半导体器件中的高密度能量存储。目前的方法有两个主要方面。第一方面是基于在半导体中形成等离子体来在半导体器件中提供高密度能量存储。第二方面是提供基于p-n结中的电荷分离的高密度能量存储。

23. 发明申请

US20110269298A1 Irradiation assisted nucleation of quantum confinements by atomic layer deposition 有权
标题翻译：通过原子层沉积来辐射辅助成核量子限制
公开(公告)号：US20110269298A1
公开(公告)日：2011-11-03
申请号：US13065582
申请日：2011-03-24
申请人： Timothy P. Holme , Andrei Iancu , Hee Joon Jung , Michael C Langston , Munekazu Motoyama , Friedrich B. Prinz , Takane Usui , Hitoshi Iwadate , Neil Dasgupta , Cheng-Chieh Chao
发明人： Timothy P. Holme , Andrei Iancu , Hee Joon Jung , Michael C Langston , Munekazu Motoyama , Friedrich B. Prinz , Takane Usui , Hitoshi Iwadate , Neil Dasgupta , Cheng-Chieh Chao
IPC分类号： H01L21/18 , B82Y40/00
CPC分类号： C23C16/482 , B82Y10/00 , B82Y20/00 , C23C16/48 , C23C16/483 , C23C16/486 , C23C16/487 , H01L21/02532 , H01L21/02568 , H01L21/02601 , H01L21/02603 , H01L21/0262 , H01L31/035209 , H01L31/035218 , H01L31/035227 , H01L31/035236 , H01L31/18 , Y10S977/762 , Y10S977/773 , Y10S977/774
摘要： A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.
摘要翻译：提供了一种制造量子限制的方法。该方法包括使用沉积设备沉积衬底上的材料层，其中沉积包括在循环之前，循环期间和/或在沉积循环之后照射该层，以改变在该沉积中的量子限制的成核材料层以控制量子限制的尺寸和/或形状。量子限制可以包括量子阱，纳米线或量子点。相对于沉积设备，照射可以就地或离位。照射可以包括光子，电子或离子的照射。沉积可以包括原子层沉积，化学气相沉积，MOCVD，分子束外延，蒸发，溅射或脉冲激光沉积。

24. 发明申请

US20110027689A1 Silver-copper-zinc catalyst for fuel cells and/or electrolyzers 失效
标题翻译：用于燃料电池和/或电解器的银 - 铜 - 锌催化剂
公开(公告)号：US20110027689A1
公开(公告)日：2011-02-03
申请号：US12799608
申请日：2010-04-27
申请人： Timothy P. Holme , Friedrich B. Prinz
发明人： Timothy P. Holme , Friedrich B. Prinz
IPC分类号： H01M8/10 , C25B9/08 , B01J23/06
CPC分类号： H01M4/90 , B01J23/8953 , C25B11/04 , H01M4/9058 , H01M8/1007
摘要： Silver-copper-zinc compositions are employed as catalysts, e.g., for fuel cell and/or electrolyzer applications. These compositions have been experimentally tested in solid oxide fuel cell and proton exchange membrane fuel cell configurations. Such catalysts can be effective for both the anode and cathode half-reactions. A preferred composition range is AgxCuyZnz, where 0≦x≦0.1, 0.2≦y≦0.5, and 0.5≦z≦0.8.
摘要翻译：银 - 铜 - 锌组合物用作催化剂，例如用于燃料电池和/或电解槽应用。这些组合物已经在固体氧化物燃料电池和质子交换膜燃料电池配置中进行了实验测试。这种催化剂对阳极和阴极半反应都是有效的。优选的组成范围是AgxCuyZnz，其中0和nlE; x和nlE; 0.1,0.2和nlE; y＆nlE; 0.5和0.5＆lt; 1; z＆nlE; 0.8。

25. 发明授权

US08877367B2 High energy storage capacitor by embedding tunneling nano-structures 有权
标题翻译：通过嵌入隧道纳米结构的高储能电容器
公开(公告)号：US08877367B2
公开(公告)日：2014-11-04
申请号：US12928346
申请日：2010-12-09
申请人： Timothy P. Holme , Friedrich B. Prinz , Philip B. Van Stockum
发明人： Timothy P. Holme , Friedrich B. Prinz , Philip B. Van Stockum
IPC分类号： H01M2/14 , H01G9/02 , H01L29/12 , H01G9/048 , H01L49/02
CPC分类号： H01G9/02 , B82Y10/00 , H01G4/06 , H01G4/085 , H01G4/33 , H01G9/048 , H01G11/26 , H01G11/28 , H01G11/52 , H01L28/40 , H01L29/127 , Y02T10/7022
摘要： In an All-Electron Battery (AEB), inclusions embedded in an active region between two electrodes of a capacitor provide enhanced energy storage. Electrons can tunnel to/from and/or between the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. One or more barrier layers is present in an AEB to block DC current flow through the device. The AEB effect can be enhanced by using multi-layer active regions having inclusion layers with the inclusions separated by spacer layers that don't have the inclusions. The use of cylindrical geometry or wrap around electrodes and/or barrier layers in a planar geometry can enhance the basic AEB effect. Other physical effects that can be employed in connection with the AEB effect are excited state energy storage, and formation of a Bose-Einstein condensate (BEC).
摘要翻译：在全电子电池（AEB）中，嵌入在电容器的两个电极之间的有源区域中的夹杂物提供增强的能量存储。电子可以与夹杂物之间和/或内部隧道，从而相对于传统电容器增加电荷存储密度。 AEB中存在一个或多个阻挡层，以阻止流过该装置的直流电流。可以通过使用具有夹层的多层活性区域来增强AEB效果，其中夹杂物由不具有夹杂物的间隔层分离。使用圆柱形几何形状或围绕电极和/或平面几何形状的阻挡层，可以增强基本的AEB效果。可用于AEB效应的其他物理效应是激发状态能量储存和Bose-Einstein凝析物（BEC）的形成。

26. 发明授权

US08551868B2 Irradiation assisted nucleation of quantum confinements by atomic layer deposition 有权
标题翻译：通过原子层沉积来辐射辅助成核量子限制
公开(公告)号：US08551868B2
公开(公告)日：2013-10-08
申请号：US13065582
申请日：2011-03-24
申请人： Timothy P. Holme , Andrei Iancu , Hee Joon Jung , Michael C Langston , Munekazu Motoyama , Friedrich B. Prinz , Takane Usui , Hitoshi Iwadate , Neil Dasgupta , Cheng-Chieh Chao
发明人： Timothy P. Holme , Andrei Iancu , Hee Joon Jung , Michael C Langston , Munekazu Motoyama , Friedrich B. Prinz , Takane Usui , Hitoshi Iwadate , Neil Dasgupta , Cheng-Chieh Chao
IPC分类号： H01L21/36
CPC分类号： C23C16/482 , B82Y10/00 , B82Y20/00 , C23C16/48 , C23C16/483 , C23C16/486 , C23C16/487 , H01L21/02532 , H01L21/02568 , H01L21/02601 , H01L21/02603 , H01L21/0262 , H01L31/035209 , H01L31/035218 , H01L31/035227 , H01L31/035236 , H01L31/18 , Y10S977/762 , Y10S977/773 , Y10S977/774
摘要： A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.
摘要翻译：提供了一种制造量子限制的方法。该方法包括使用沉积设备沉积衬底上的材料层，其中沉积包括在循环之前，循环期间和/或在沉积循环之后照射该层，以改变在该沉积中的量子限制的成核材料层以控制量子限制的尺寸和/或形状。量子限制可以包括量子阱，纳米线或量子点。相对于沉积设备，照射可以就地或离位。照射可以包括光子，电子或离子的照射。沉积可以包括原子层沉积，化学气相沉积，MOCVD，分子束外延，蒸发，溅射或脉冲激光沉积。

27. 发明授权

US08524398B2 All-electron battery having area-enhanced electrodes 有权
标题翻译：全电子电池具有面积增强的电极
公开(公告)号：US08524398B2
公开(公告)日：2013-09-03
申请号：US12798102
申请日：2010-03-29
申请人： Timothy P. Holme , Friedrich B. Prinz , Takane Usui
发明人： Timothy P. Holme , Friedrich B. Prinz , Takane Usui
IPC分类号： H01M2/00 , H01G4/33
CPC分类号： H01G4/33 , H01G9/048 , H01G9/055 , H01G11/26 , H01L28/82 , H01L28/91 , Y02E60/13
摘要： Improved energy storage is provided by exploiting two physical effects in combination. The first effect can be referred to as the All-Electron Battery (AEB) effect, and relates to the use of inclusions embedded in a dielectric structure between two electrodes of a capacitor. Electrons can tunnel through the dielectric between the electrodes and the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. The second effect can be referred to as an area enhancement effect, and relates to the use of micro-structuring or nano-structuring on one or both of the electrodes to provide an enhanced interface area relative to the electrode geometrical area. Area enhancement is advantageous for reducing the self-discharge rate of the device.
摘要翻译：通过组合利用两种物理效应来提供改进的能量存储。第一效果可以称为全电子电池（AEB）效应，并且涉及嵌入在电容器的两个电极之间的电介质结构中的夹杂物的使用。电子可以穿过电极和夹杂物之间的电介质，从而相对于常规电容器增加电荷存储密度。第二个效果可以称为区域增强效应，并且涉及在一个或两个电极上使用微结构或纳米结构以提供相对于电极几何面积的增强的界面面积。面积增加对于降低装置的自放电率是有利的。

28. 发明授权

US08163338B2 Precursor selection method for chemical vapor deposition techniques 失效
标题翻译：化学气相沉积技术的前体选择方法
公开(公告)号：US08163338B2
公开(公告)日：2012-04-24
申请号：US12070389
申请日：2008-02-14
申请人： Timothy P. Holme , Friedrich B. Prinz , Masayuki Sugawara
发明人： Timothy P. Holme , Friedrich B. Prinz , Masayuki Sugawara
IPC分类号： C23C16/00 , G06G7/58
CPC分类号： C23C16/404 , C23C16/409 , C23C16/44 , C30B23/02 , C30B25/02
摘要： A method of precursor selection for thin film deposition is provided, that includes a group of precursors, using a rule-set for selecting one or more candidate precursors for thermal stability, high growth rate, and low contamination. Candidate geometries and constituent geometries are simulated and optimized, and bond strengths of the candidates and constituents are determined. The rule-set is based on bond strength that compares molecule and constituent energies between a set of bond strengths within a candidate ligand or between a metal atom and one ligand. The rule-set requires metal atom-ligand bonds are between 0.2 and 3 eV, metal atom-ligand bond strengths are less than metal atom-ligand bond strengths of other candidates. The metal atom-ligand bond strength is >TΔS, where T is a reaction temperature and ΔS is the reaction entropy change and the bond within a ligand, where (ligand bond)>(metal atom and ligand bond).
摘要翻译：提供了一种用于薄膜沉积的前体选择方法，其包括一组前体，使用规则集来选择用于热稳定性，高生长速率和低污染的一种或多种候选前体。模拟和优化候选几何和组成几何，确定候选人和组成部分的债券强度。规则集是基于结合强度，其比较候选配体之间或金属原子与一个配体之间的一组键强度之间的分子和组分能量。规则集要求金属原子 - 配体键的介于0.2和3eV之间，金属原子 - 配体键强度小于其他候选物的金属原子 - 配体键强度。金属原子 - 配体键合强度> T＆Dgr; S，其中T是反应温度，Dgr; S是反应熵变和配体内的键（配体键）>（金属原子和配体键）。

29. 发明申请

US20100240167A1 Quantum confinement solar cell fabricated by atomic layer deposition 审中-公开
标题翻译：量子限制太阳能电池通过原子层沉积制造
公开(公告)号：US20100240167A1
公开(公告)日：2010-09-23
申请号：US12661778
申请日：2010-03-23
申请人： Neil Dasgupta , Wonyoung Lee , Timothy P. Holme , Friedrich B. Prinz
发明人： Neil Dasgupta , Wonyoung Lee , Timothy P. Holme , Friedrich B. Prinz
IPC分类号： H01L31/18 , H01L31/0352
CPC分类号： C23C16/45525 , B82Y20/00 , C23C16/408 , H01L21/02521 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L21/02603 , H01L21/02628 , H01L31/032 , H01L31/0352 , H01L31/035236 , H01L31/0384 , H01L31/075 , Y02E10/548
摘要： The current invention provides a method of fabricating quantum confinement (QC) in a solar cell that includes using atomic layer deposition (ALD) for providing at least one QC structure embedded into an intrinsic region of a p-i-n diode in the solar cell, where optical and electrical properties of the confinement structure are adjusted according to at least one dimension of the confinement structure. The QC structures can include quantum wells, quantum wires, quantum tubes, and quantum dots.
摘要翻译：本发明提供了一种在太阳能电池中制造量子限制（QC）的方法，其包括使用原子层沉积（ALD）来提供嵌入到太阳能电池中的pin二极管的本征区域中的至少一个QC结构，其中光学和根据约束结构的至少一个维度来调整约束结构的电性能。 QC结构可以包括量子阱，量子线，量子管和量子点。

30. 发明申请

US20100190323A1 Modifying catalytic behavior of nanocrystals 有权
标题翻译：改性纳米晶体的催化行为
公开(公告)号：US20100190323A1
公开(公告)日：2010-07-29
申请号：US12657580
申请日：2010-01-21
申请人： Timothy P. Holme , Friedrich B. Prinz
发明人： Timothy P. Holme , Friedrich B. Prinz
IPC分类号： H01L21/22
CPC分类号： B82Y30/00 , B01J23/42 , B01J23/52 , B01J31/2234 , B01J31/2295 , B01J35/0013 , B01J35/002 , B01J2531/0211 , B01J2531/18 , B01J2531/828
摘要： The present invention provides a method of providing a desired catalyst electron energy level. The method includes providing a donor material quantum confinement structure (QCS) having a first Fermi level, and providing an acceptor QCS material having a second Fermi level, where the first Fermi level is higher than the second Fermi level. According to the method the acceptor is disposed proximal to the donor to alter an electronic structure of the donor and the acceptor materials to provide the desired catalyst electron energy level.
摘要翻译：本发明提供了提供所需催化剂电子能级的方法。该方法包括提供具有第一费米能级的施主材料量子限制结构（QCS），以及提供具有第二费米能级的受体QCS材料，其中第一费米能级高于第二费米能级。根据该方法，将受体放置在供体附近，以改变供体的电子结构和受体材料以提供所需的催化剂电子能级。

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